Silicon-based optoelectronic heterogeneous integration for optical interconnection

The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated packaging.This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection.The research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on.

A 1.25Gb/s InP-Based Vertical Monolithic Integration of an MQW Laser Diode and an HBT Driver witha Lateral Buffer Mes a Structure

A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.

Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process

A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12.

Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology

A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

Enhancement of electroluminescent properties of organic optoelectronic integrated device by doping phosphorescent dye

Organic optoelectronic integrated devices（OIDs） with ultraviolet（UV） photodetectivity and different color emitting were constructed by using a thermally activated delayed fluorescence（TADF） material 4, 5-bis（carbazol-9-yl）-1, 2-dicyanobenzene（2 CzPN） as host. The OIDs doping with typical red phosphorescent dye [tris（1-phenylisoquinoline）iridium（Ⅲ）, Ir（piq）3], orange phosphorescent dye {bis[2-（4-tertbutylphenyl）benzothiazolato-N,C-（2＇）]iridium（acetylacetonate）,（tbt）2 Ir（acac）}, and blue phosphorescent dye [bis（2, 4-di-fluorophenylpyridinato）-tetrakis（1-pyrazolyl）borate iridium（Ⅲ）, FIr6] were investigated and compared. The（tbt）2 Ir（acac）-doped orange device showed better performance than those of red and blue devices, which was ascribed to more effective energy transfer. Meanwhile, at a low dopant concentration of 3 wt.%, the（tbt）2 Ir（acac）-doped OIDs showed the maximum luminance, current efficiency, power efficiency of 70786 cd/m^2, 39.55 cd/A, and 23.92 lm/W, respectively, and a decent detectivity of 1.07 × 10^11 Jones at a bias of -2 V under the UV-350 nm illumination. This work may arouse widespread interest in constructing high efficiency and luminance OIDs based on doping phosphorescent dye.

Butt-Joint Monolithically Integrated DFB-LD/EA-MD Light Source for 10Gbit/s Transmission

This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is to improve the optical coupling between the laser and modulator;another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator.The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA.Output power at 100mA is more than 10mW.The extinction characteristics,modulation bandwidth,and electrical return loss are measured.3dB bandwidth more than 10GHz is monitored.

Monolithically Integrated Laser Diode and Electroabsorption Modulator with Dual-Waveguide Spot-Size Converter Output

A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB.These devices exhibit a 3dB modulation bandwidth of 15.0GHz,and modulator DC extinction ratios of 16.2dB.The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.

1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process

A novel 1 55μm laser diode with spot size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double core structure is employed.For the spot size converter,a buried ridge double core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0 35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14 89°×18 18°,respectively,resulting in low coupling losses with a cleaved optical fiber (3dB loss).

Integrated model optocouplers

Utilizing hybrid integration model.the integrated model optocouplers have successfully developed.The design,fabrication and characteristic parameters of the devices are presented.

Silicon-based optoelectronics for general-purpose matrix computation:a review

Conventional electronic processors,which are the mainstream and almost invincible hardware for computation,are approaching their limits in both computational power and energy efficiency,especially in large-scale matrix computation.By combining electronic,photonic,and optoelectronic devices and circuits together,silicon-based optoelectronic matrix computation has been demonstrating great capabilities and feasibilities.Matrix computation is one of the few general-purpose computations that have the potential to exceed the computation performance of digital logic circuits in energy efficiency,computational power,and latency.Moreover,electronic processors also suffer from the tremendous energy consumption of the digital transceiver circuits during high-capacity data interconnections.We review the recent progress in photonic matrix computation,including matrix-vector multiplication,convolution,and multiply–accumulate operations in artificial neural networks,quantum information processing,combinatorial optimization,and compressed sensing,with particular attention paid to energy consumption.We also summarize the advantages of siliconbased optoelectronic matrix computation in data interconnections and photonic-electronic integration over conventional optical computing processors.Looking toward the future of silicon-based optoelectronic matrix computations,we believe that silicon-based optoelectronics is a promising and comprehensive platform for disruptively improving general-purpose matrix computation performance in the post-Moore’s law era.

Monolithically Integrating a 180° Bent Waveguide into a III-Nitride Optoelectronic On-Chip System

GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption.This miniaturized integration not only enhances multifunctional performance but also reduces material,processing,and packaging costs.In this study,we present an optoelectronic on-chip system fabricated using a top-down approach on a III-nitride-on-silicon wafer.The system includes a near-ultraviolet light source,a monitor,a 180°bent waveguide,an electro-absorption modulator,and a receiver,all integrated without the need for regrowth or post-growth doping.35 Mbit/s optical data communication is demonstrated through light propagation within the system,confirming its potential for compact GaN-based optoelectronic solutions.

Progress of Si-based Optoelectronic Devices

Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit.This is due to the fact that Si-based optoelectronic technology can be compatible with Si microelectronic technology.If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution.In the article,the current developments of this exciting field are mainly reviewed in the recent years.The involved contents are the realization of various Si-based optoelectronic devices,such as light-emitting diodes,optical waveguides devices,Si photonic bandgap crystals,and Si laser,etc.Finally,the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.

“光电信息获取与处理”综合实验科教融合体系探索——以遥感科学与技术专业为例

光电信息技术是一门综合交叉学科,知识体系涉及诸多学科基础理论和工程技术,培养的人才不仅应掌握综合知识内容,还应具备解决专业领域应用问题的能力。以遥感科学技术专业为例,针对光学物理量与非光学物理量的信息探测及处理这两个光电信息探测主题,以科教融合为导向,以专业课程体系为框架,探索将遥感专业前沿研究融入“光电信息获取与处理”综合实验的教学方案和实验内容体系,从而巩固学生专业知识,训练学生综合实践能力,拓宽学生学术视野,提升学生创新素质。

基于教研思融合的纳米光电材料新工科课程创新探索

以服务国家重大战略需求为导向,近年北京工业大学开设纳米光电材料本科专业课程,为培养国家战略急需的纳米科技和半导体相关领域的高素质专业人才提供必要的知识储备。该文基于作者2021—2023年承担纳米光电材料课程积累的一些教学实践经验,通过教学、科研与思政三者相互渗透与融合的新型教学模式,围绕课程目标定位、课程内容设置和教学方法探讨进行阐述,旨在为新工科课程教学创新模式建设及复合型高素质新工科高级人才培养提供一定借鉴。

Two-dimensional optoelectronic devices for silicon photonic integration

With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's Law.New material systems and new device architectures are considered promising strategies for this challenge.Two-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength range.To this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic integration.In this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon photonics.Firstly,the basic op-tical properties of 2D materials and heterostructures are summarized in the first part.Then,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in detail.Finally,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.

Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper

Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent progress of the direct epitaxy and fabrication of quantum dot （QD） lasers and integrated guided-wave devices on silicon. This approach involves the development of molecular beam epitaxial growth of self- organized QD lasers directly on silicon substrates and their monolithic integration with amorphous silicon waveguides and quantum well electroabsorption modulators. Additionally, we report a preliminary study of long-wavelength （〉 1.3 μm） QD lasers grown on silicon and integrated crystalline silicon waveguides using membrane transfer technology.

小型化高隔离度平衡光电探测器阵列研究

针对传统微波光子应用平衡光电探测器体积大、集成度低的问题,设计了一种基于光电混合集成封装技术的小型化、高隔离度平衡光电探测器阵列,通过集成多个平衡光电二极管芯片及其偏置与匹配电路,实现了4个独立通道的平衡光电探测功能,每个通道平均体积仅为588 mm3。此外,搭建了测试系统,对平衡光电探测器阵列的性能进行测试。测试结果表明:该平衡光电探测器阵列各个通道的响应度大于0.9 A/W,3 dB带宽约为12 GHz,带宽范围内的通道一致性优于±0.43 dB,共模抑制比大于30 dB,通道隔离度在50 dBc以上,在10 GHz处的饱和输入光功率大于8.4 dBm。

光学力学与光电传感技术的融合与创新

光学力学和光电传感技术在科学与工程领域有着紧密的联系,并在各自的材料、传感器、成像和测量领域发挥着重要作用。光学力学对光与物质相互作用而产生的力学效应有着深入研究,而光电传感技术则围绕光信号转化为电信号后进行测量和控制的过程来进行探讨。但传统独立的领域研究有着很多局限性,这也为光学力学和光电传感技术各自的发展带来了阻碍。研究目的在于深入探究光学力学与光电传感技术的融合与创新,并通过二者在各自领域的优势进行互补,从而推动科学技术的进步。

赛创融合模式下的光电类专业改革与探索——以厦门理工学院为例

在万众创新的浪潮下,光电领域的产业发展、结构调整、产业融合是高等学校“光电类”学生肩负的重任,高校作为光电专业和相关技能型、应用型人才培养的基地,将为光电专业的人才培养提供支撑。大学生课外竞赛为打造光电类创新型人才提供了一体化的平台,通过赛创融合可以进一步加强专业实践教学体系的构建,全面提高光电类学生的创新创业技能。

Integrated optoelectronics with two-dimensional materials

As we enter the post-Moore era,heterogeneous optoelectronic integrated circuits(OEICs)are attracting significant attention as an alternative approach to scaling to smaller-sized transistors.Two-dimensional(2D)materials,offering a range of intriguing optoelectronic properties as semiconductors,semimetals,and insulators,provide great potential for developing nextgeneration heterogeneous OEICs.For instance,Fermi levels of 2D materials can be tuned by applying electrical voltages,while their atomically thin geometries are inherently suited for the fabrication of planar devices without suffering from lattice mismatch.Since the first graphene-on-silicon OEICs were demonstrated in 2011,2D-material heterogeneous OEICs have significantly progressed.To date,researchers have a better understanding of the importance of interface states on the optical properties of chip-integrated 2D materials.Moreover,there has been impressive progress towards the use of 2D materials for waveguide-integrated lasers,modulators,and photodetectors.In this review,we summarize the history,status,and trend of integrated optoelectronics with 2D materials.