Simulations of photoresist etching,aerial image,exposure,and post-bake processes are integrated to obtain a photolithography process simulation for microelectromechanical system（MEMS） and integrated circuit（IC） fa...Simulations of photoresist etching,aerial image,exposure,and post-bake processes are integrated to obtain a photolithography process simulation for microelectromechanical system（MEMS） and integrated circuit（IC） fabrication based on three-dimensional （3D） cellular automata（CA）. The simulation results agree well with available experimental results. This indicates that the 3D dynamic CA model for the photoresist etching simulation and the 3D CA model for the post-bake simulation could be useful for the monolithic simulation of various lithography processes. This is determined to be useful for the device-sized fabrication process simulation of IC and MEMS.展开更多
Large eddy simulation （LES） using the Smagorinsky eddy viscosity model is added to the two-dimensional nine velocity components （D2Q9） lattice Boltzmann equation （LBE） with multi-relaxation-time （MRT） to simul...Large eddy simulation （LES） using the Smagorinsky eddy viscosity model is added to the two-dimensional nine velocity components （D2Q9） lattice Boltzmann equation （LBE） with multi-relaxation-time （MRT） to simulate incompressible turbulent cavity flows with the Reynolds numbers up to 1 × 10^7. To improve the computation efficiency of LBM on the numerical simulations of turbulent flows, the massively parallel computing power from a graphic processing unit （GPU） with a computing unified device architecture （CUDA） is introduced into the MRT-LBE-LES model. The model performs well, compared with the results from others, with an increase of 76 times in computation efficiency. It appears that the higher the Reynolds numbers is, the smaller the Smagorinsky constant should be, if the lattice number is fixed. Also, for a selected high Reynolds number and a selected proper Smagorinsky constant, there is a minimum requirement for the lattice number so that the Smagorinsky eddy viscosity will not be excessively large.展开更多
A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all othe...A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET and improving the device performance and the scale down capability. According to our simulation,the gate-all-around cylindrical device shows many benefits over conventional multi-gate FinFET, including gate-all- around rectangular （GAAR） devices. With gate-all-around cylindrical architecture,the transistor is controlled by an essen- tially infinite number of gates surrounding the entire cylinder-shaped channel. The electrical integrity within the channel is improved by reducing the leakage current due to the non-symmetrical field accumulation such as the corner effect. The proposed fabrication procedures for devices having GAAC device architecture are also discussed. The method is characterized by its simplicity and full compatibility with conventional planar CMOS technology.展开更多
We report the analysis and TCAD results of a gate-all-around cylindrical （GAAC） FinFET with operation based on channel accumulation. The cylindrical channel of the GAAC FinFET is essentially controlled by an infinit...We report the analysis and TCAD results of a gate-all-around cylindrical （GAAC） FinFET with operation based on channel accumulation. The cylindrical channel of the GAAC FinFET is essentially controlled by an infinite number of gates surrounding the cylinder-shaped channel. The symmetrical nature of the field in the channel leads to improved electrical characteristics, e.g. reduced leakage current and negligible corner effects. The Ion/Ioff ratio of the device can be larger than 106, as the key parameter for device operation. The GAAC FinFET operating in accumulation mode appears to be a good potential candidate for scaling down to sub-10 nm sizes.展开更多
Hot tearing is one of the most serious defects during the casting solidification process.In this study,a new type of multichannel"cross"hot tearing device was designed.The hot cracks initiation and propagati...Hot tearing is one of the most serious defects during the casting solidification process.In this study,a new type of multichannel"cross"hot tearing device was designed.The hot cracks initiation and propagation were predicted by the relationship between temperature,shrinkage force and solidification time during the casting solidification process.The reliability and practicability of the multichannel"cross"hot tearing device were verified by casting experiments and numerical simulations.The theoretical calculation based on Clyne-Davies model and numerical simulation results show that the hot tearing tendency decreases in the order:2024 Al alloy>Al-Cu alloy>Al-Si alloy at a pouring temperature of 670°C and a mold temperature of 25°C.Feeding of liquid films at the end of solidification plays an important role in the propagation process of hot tearing.The decrease of hot tearing tendency is attributed to the feeding of liquid film and intergranular bridging.展开更多
文摘Simulations of photoresist etching,aerial image,exposure,and post-bake processes are integrated to obtain a photolithography process simulation for microelectromechanical system（MEMS） and integrated circuit（IC） fabrication based on three-dimensional （3D） cellular automata（CA）. The simulation results agree well with available experimental results. This indicates that the 3D dynamic CA model for the photoresist etching simulation and the 3D CA model for the post-bake simulation could be useful for the monolithic simulation of various lithography processes. This is determined to be useful for the device-sized fabrication process simulation of IC and MEMS.
基金supported by College of William and Mary,Virginia Institute of Marine Science for the study environment
文摘Large eddy simulation （LES） using the Smagorinsky eddy viscosity model is added to the two-dimensional nine velocity components （D2Q9） lattice Boltzmann equation （LBE） with multi-relaxation-time （MRT） to simulate incompressible turbulent cavity flows with the Reynolds numbers up to 1 × 10^7. To improve the computation efficiency of LBM on the numerical simulations of turbulent flows, the massively parallel computing power from a graphic processing unit （GPU） with a computing unified device architecture （CUDA） is introduced into the MRT-LBE-LES model. The model performs well, compared with the results from others, with an increase of 76 times in computation efficiency. It appears that the higher the Reynolds numbers is, the smaller the Smagorinsky constant should be, if the lattice number is fixed. Also, for a selected high Reynolds number and a selected proper Smagorinsky constant, there is a minimum requirement for the lattice number so that the Smagorinsky eddy viscosity will not be excessively large.
文摘A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET and improving the device performance and the scale down capability. According to our simulation,the gate-all-around cylindrical device shows many benefits over conventional multi-gate FinFET, including gate-all- around rectangular （GAAR） devices. With gate-all-around cylindrical architecture,the transistor is controlled by an essen- tially infinite number of gates surrounding the entire cylinder-shaped channel. The electrical integrity within the channel is improved by reducing the leakage current due to the non-symmetrical field accumulation such as the corner effect. The proposed fabrication procedures for devices having GAAC device architecture are also discussed. The method is characterized by its simplicity and full compatibility with conventional planar CMOS technology.
文摘We report the analysis and TCAD results of a gate-all-around cylindrical （GAAC） FinFET with operation based on channel accumulation. The cylindrical channel of the GAAC FinFET is essentially controlled by an infinite number of gates surrounding the cylinder-shaped channel. The symmetrical nature of the field in the channel leads to improved electrical characteristics, e.g. reduced leakage current and negligible corner effects. The Ion/Ioff ratio of the device can be larger than 106, as the key parameter for device operation. The GAAC FinFET operating in accumulation mode appears to be a good potential candidate for scaling down to sub-10 nm sizes.
基金This work was financially supported by the National Natural Science Foundation of China(Grant No.51875365).
文摘Hot tearing is one of the most serious defects during the casting solidification process.In this study,a new type of multichannel"cross"hot tearing device was designed.The hot cracks initiation and propagation were predicted by the relationship between temperature,shrinkage force and solidification time during the casting solidification process.The reliability and practicability of the multichannel"cross"hot tearing device were verified by casting experiments and numerical simulations.The theoretical calculation based on Clyne-Davies model and numerical simulation results show that the hot tearing tendency decreases in the order:2024 Al alloy>Al-Cu alloy>Al-Si alloy at a pouring temperature of 670°C and a mold temperature of 25°C.Feeding of liquid films at the end of solidification plays an important role in the propagation process of hot tearing.The decrease of hot tearing tendency is attributed to the feeding of liquid film and intergranular bridging.
