Fine-tuning the thicknesses of organic layers to realize high-efficiency and long-lifetime blue organic light-emitting diodes

By using p-bis（p - N, N-diphenyl-aminostyryl）benzene doped 2-tert-butyl-9, 10-bis-β-naphthyl）-anthracene as an emitting layer, we fabricate a high-efficiency and long-lifetime blue organic light emitting diode with a maximum external quantum efficiency of 6.19% and a stable lifetime at a high initial current density of 0.0375 A/cm2. We demonstrate that the change in the thicknesses of organic layers affects the operating voltage and luminous efficiency greater than the lifetime. The lifetime being independent of thickness is beneficial in achieving high-quality full-colour display devices and white lighting sources with multi-emitters.

Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes

Two soluble tetraalkyl-substituted zinc phthalocyanines(ZnPcs)for use as anode buffer layer materials in tris(8-hydroxyquinoline)aluminum(Alq3)-based organic light-emitting diodes(OLEDs)are presented in this work.The holeblocking properties of these Zn Pc layers slowed the hole injection process into the Alq3 emissive layer greatly and thus reduced the production of unstable cationic Alq3(Alq3^+)species.This led to the enhanced brightness and efficiency when compared with the corresponding properties of OLEDs based on the popular poly-(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)buffer layer.Furthermore,because of the high thermal and chemical stabilities of these Zn Pcs,a nonaqueous film fabrication process was realized together with improved charge balance in the OLEDs and enhanced OLED lifetimes.

Improved performance of organic light-emitting diodes with dual electron transporting layers

In this study the performance of organic light-emitting diodes （OLEDs） are enhanced significantly, which is based on dual electron transporting layers （13phen/CuPc）. By adjusting the thicknesses of Bphen and CuPc, the maximal luminescence, the maximal current efficiency, and the maximal power efficiency of the device reach 17570 cd/m^2 at 11 V, and 5.39 cd/A and 3.39 lm/W at 3.37 mA/cm^2 respectively, which are enhanced approximately by 33.4%, 39.3%, and 68.9%, respectively, compared with those of the device using Bphen only for an electron transporting layer. These results may provide some valuable references for improving the electron injection and the transportation of OLED.

Efficiency of Blue Organic Light-emitting Diodes Enhanced by Employing an Exciton Feedback Layer

We report that a novel exciton feedback effect is observed by introducing the bis（2-methyl-8-quinolinolato）（4- phenylphenolato）Muminum （BAlq） inserted between the emitting layer （EML） and the electron transporting layer in blue organic light emitting diodes. As an exciton feedback layer （EFL）, the BAlq does not act as a traditional hole blocking effect. The design of this kind of device structure can greatly reduce excitons＇ quenching due to accumulated space charge at the exciton formation interface. Meanwhile, the non-radiative energy transfer from EFL to the EML can also be utilized to enhance the excitons＇ formation, which is confirmed by the test of photolumimescent transient lifetime decay and electroluminescence enhancement of these devices. Accordingly, the optimal device presents the improved performances with the maximum current efficiency of 4.2 cd/A and the luminance of 24600cd/m2, which are about 1.45 times and 1.75 times higher than those of device A （control device） without the EFL, respectively. Simultaneously, the device shows an excellent color stability with a tiny offset of the CIE coordinates （△x = ±0.003, △y = ±0.004） and a relatively lower efficiency roll-off of 26.2% under the driving voltage varying from 3 V to 10 V.

Improvement of Performance of Organic Light-Emitting Diodes with Both a MoO3 Hole Injection Layer and a MoO3 Doped Hole Transport Layer

We improve the performance of organic light-emitting diodes （OLEDs） with both a MoO3 hole injection layer （HIL） and a MoO3 doped hole transport layer （HTL）, and present a systematical and comparative investigation on these devices. Compared with OLEDs with only MoO3 HIL or MoO3 doped HTL, OLEDs with both MoO3 HIL and MoO3 doped HTL show superior performance in driving voltage, power efficiency, and stability. Based on the typical NPB/Alq3 heterojunction structure, OLEDs with both MoO3 HIL and MoO3 doped HTL show a driving voltage of 5.4 V and a power efficiency of 1.41 lm/W for 1000 cd/m2, and a lifetime of around 0. 88 h with an initial luminance of 5268 cd/m2 under a constant current of 190 mA/cm2 operation in air without encapsulation. While OLEDs with only MoO3 HIL or MoO3 doped HTL show higher driving voltages of 6.4 V or 5.8 V and lower power efficiencies of 1.201m/W or 1.341m/W for 1000cd/m2, and a shorter lifetime of 0.33 or 0.60h with an initial luminance of around 5122 or 5300cd/m2 under a constant current of 200 or 216mA/cm2 operation. Our results demonstrate clearly that using both MoO3 HIL and MoO3 doped HTL is a simple and effective approach to simultaneoasly improve both the hole injection and transport efficiency, resulting from the lowered energy barrier at the anode interface and the increased hole carrier density in MoO3 doped HTL.

BiPh-m-BiDPO as a Hole-Blocking Layer for Organic Light-Emitting Diodes： Revealing Molecular Structure-Properties Relationship

We report a simple hole-blocking material （biphenyl-3,3＇-diyl）bis（diphenylphosphine oxide） （BiPh-m-BiDPO） based on our recent advance. The bis（phosphine oxide） compound shows HOMO/LUMO levels of ∽-6.71/- 2.51 eV. Its phosphorescent spectrum in a solid film features two major emission bands peaking at 2.69 and 2.4eV, corresponding to 0-0 and 01 vibronic transitions, respectively. The measurement of the electron-only devices reveals that BiPh-m-BiDPO possesses electron mobility of 2.28 × 10^-9-3.22× 10^-8cm2 V-1s-1 at E = 2- 5 × 10^5 V/cm. The characterization of the sky blue fluorescent and red phosphorescent pin organic light-emitting diodes （OLEDs） utilizing BiPh-m-BiDPO as the hole blocker shows that its shallow LUMO level as well as the low electron mobility affects significantly the power efficiency and hence operational stability, relative to the luminous efficiency, especially at high luminance. In combination with our recent results, the present study provides an indepth insight on the molecular structure-property correlation in the organic phosphinyl-containing hole-blocking materials.

Aggregation-induced emission luminogens for organic light-emitting diodes with a single-component emitting layer

Organic light-emitting diodes(OLEDs)have garnered increasing attention as a promising candidate for application in next-generation displays and solid-state lighting devices.The doping technique commonly used to fabricate light-emitting layers(EMLs)of OLEDs disperses the emitting material in a host matrix to mitigate aggregation-induced quenching(ACQ).Alternatively,owing to their high efficiency and ease of manufacture,nondoped OLEDs have been developed as a substitute for doped OLEDs.When fabricating nondoped OLEDs,it is essential to suppress the ACQ effect in the EML and efficiently utilize the generated excitons for radiative decay.Since the discovery of aggregation-induced emission(AIE)by Tang et al.,significant work has been done to improve the stability and efficiency of nondoped OLEDs based on fluorescent AIE luminogens(AIEgens).Fluorescent AIEgens,synthesized using various molecular frameworks,such as silole,tetra/triphenylethylene,tetraphenylpyrazine,and tetraphenylbenzene,exhibit high photoluminescence quantum yields in the solid state.Therefore,many studies have reported that fluorescent AIEgen-based OLEDs have excellent external quantum efficiency and exhibit emission at various wavelengths,including deep-blue/blue/green emission.With the development of fluorescent AIEgens,delayed fluorescent AIEgens with efficient triplet utilization through reverse intersystem crossing and AIE properties have been adopted as ideal emitters and used in nondoped OLEDs.This review systematically discusses and summarizes recent reports on the development of AIEgens for nondoped OLEDs by grouping them into fluorescent and delayed fluorescent AIEgens.The purpose of this review is to provide deep insights into the design of novel AIEgens for high-performance nondoped OLEDs.

Effect of Pixellization on Efficiency and Stability of MEH-PPV Based Polymer Light-Emitting Diodes

Organic light-emitting diodes are generally depicted as sequential deposition of active layers and electrodes onto a substrate, but commercial devices are fabricated using pixellization technique, where an insulator layer is introduced between the indium tin oxide and organic layer to define the area of the active device. Here, we have inserted a layer of photoresist (thickness ~ 200 nm) at the edge of patterned anode (indium tin oxide) and between the anode and hole transport layer (Poly 3, 4-ethylenedioxythiophene poly styrenesulfonate) to examine its effect on the leakage current of organic light-emitting diode and on the electron-hole recombination ratio in the emission area, as a result increasing the luminance efficiency. Current leakage causes the loss of charges, which adversely affects the recombination of electrons and holes in the emitting zone and results in poorer luminance efficiency. In this paper, we report the effect of pixellization on current density-voltage, luminescence-voltage and degradation behavior of single layer Poly[2-methoxy-5-(2’-ethylhexyloxy)-1, phenylene vinylene] based organic light-emitting diodes. Devices with isolation layer have 30% higher external electroluminescence quantum efficiency and reduced device degradation in comparison to without isolation layer.

Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer

By utilizing a two-step process to express the charge generation and separation mechanism of the transition metal oxides （TMOs） interconnector layer, a numerical model was proposed for tandem organic light emitting diodes （OLEDs） with a TMOs thin film as the interconnector layer. This model is valid not only for an n-type TMOs interconnector layer, but also for a p-type TMOs interconnector layer. Based on this model, the influences of different carrier injection barriers at the interface of the electrode/organic layer on the charge generation ability of interconnector layers were studied. In addition, the distribution characteristics of carrier concentration, electric field intensity and potential in the device under different carrier injection barriers were studied. The results show that when keeping one carrier injection barrier as a constant while increasing another carrier injection barrier, carri- ers injected into the device were gradually decreased, the carrier generation ability of the interconnector layer was gradually reduced, the electric field intensity at the interface of the organic/electrode was gradually enhanced, and the electric field distribution became nearly linear： the voltage drops in two light units gradually became the same. Meanwhile, the carrier injection ability decreased as another carrier injection barrier increased. The simulation re- sults agree with the experimental data. The obtained results can provide us with a deep understanding of the work mechanism of TMOs-based tandem OLEDs.

Realization of high-performance blue organic light-emitting diodes using multi-emissive layers

High-performance blue organic light-emitting diodes （OLEDs） are developed. A concept of using multiple-emissive layer （EML） configuration is adopted. In this letter, bis（2-methyl-8-quinolinolate）-4- （phenylphenolato）A1 （BAlq） and 9,10-di（naphtha-2-yl）anthracene （ADN）, which serve n- and p-type EMLs, respectively, are used to evaluate and demonstrate the multi-EML concept for blue OLEDs. The thickness effect of individual EMLs and the number of EMLs, e.g., triple and quadruple EML components, on the power efficiency of blue OLEDs are systematically investigated. To illustrate the point, the total thickness of the emissive region in different blue OLEDs are kept contact at 30 nm for comparison. The power efficiency of blue OLEDs with a quadruple EML structure of BAlq/ADN/BAlq/ADN is about 40% higher than that of blue OLEDs having a single EML unit. The Commission Internationale deL＇eclairage color coordinates of multi-EML OLEDs have values that represent the average of blue emissions from individual EMLs of BAlq and ADN.

Quantum-dot and organic hybrid light-emitting diodes employing a blue common layer for simple fabrication of full-color displays

Colloidal quantum-dot(QD)light-emitting diodes(QLEDs)have been in the forefront of future display devices due to their outstanding optoelectronic properties.However,a complicated solution-process for patterning the red,green,and blue QDs deteriorates the QLED performance and limits the resolution of full-color displays.Herein,we report a novel concept of QD–organic hybrid light-emitting diodes by introducing an organic blue common layer(BCL)which is deposited through a common mask over the entire sub-pixels.Benefitted from the optimized device structure,red and green QLEDs retained their color coordinates despite the presence of the BCL.Furthermore,adopting the BCL improved the external quantum efficiency of green and red QLEDs by 38.4%and 11.7%,respectively,due to the Förster resonance energy transfer from the BCL to the adjacent QD layers.With the BCL structure,we could simply demonstrate a full-color QD-organic hybrid device in a single substrate.We believe that this device architecture is practically applicable for easier fabrication of solution-processed,highresolution,and full-color displays with reduced process steps.

Tandem organic light-emitting diodes with buffer-modified C60/ZnPc as charge generation layer

In this paper, a significant enhancement in current efficiency of the green tandem organic light-emitting diodes(TOLEDs) is demonstrated, which is based on a buffer-modified charge generation layer(CGL) of fullerene carbon(C60)/zinc-phthalocyanine(ZnPc). Al and MoO3 were used as the buffer-modified layers on both sides of the bilayer C60/ZnPc, respectively. Experimental results show that the inserted Al and MoO3 layers can effectively increase the electron extraction of the CGL for obtaining the device performance enhancement. Compared with that of the green TOLEDs without buffer-modified layers in CGL(37.3 cd·A-1), the current efficiency of the green TOLEDs is increased to 54.1 cd·A-1. Further study results find that the performance can also be improved by optimizing the thickness of Al in the CGL. The maximum current efficiency and maximum luminance of the green TOLEDs achieve 63.5 cd·A-1 and 17 873 cd·m-2, respectively, when the multilayer structure of the CGL is Al(3 nm)/C60(5 nm)/ZnPc(5 nm)/MoO3(3 nm).

Highly efficient blue organic light-emitting diodes using various hole and electron confinement layers

In this Letter, blue phosphorescence organic light-emitting diodes （PHOLEDs） employ structures for electron and/or hole confinement; 1,3,5-tris（N-phenylbenzimiazole-2-yl）benzene is used as a hole confinement layer and tris-（phenylpyrazole）iridium [Ir（ppz）3] is utilized for an electron confinement layer （ECL）. The electrical and optical properties of the fabricated blue PHOLEDs with various carrier-confinement structures are analyzed. Structures with a large ehergy offset between the carrier confinement and emitting layers enhance the charge-carrier balance in the emitting region, resulting from the effective carrier confinement. The maximum external quantum efficiency of the blue PHOLEDs with the double-ECLs is 24.02% at 1500 cd/m^2 and its luminous efficiency is 43.76 cd/A, which is 70.47% improved compared to the device without a carrier-confinement layer.

White phosphorescent organic light-emitting diodes using double emissive layer with three dopants for color stability

We fabricate white phosphorescent organic light-emitting diodes （PHOLEDs） with three dopants and double emissive layer （EML） to achieve color stability. The white PHOLEDs use FIrpic dopant for blue EML （B- EML）, and Ir（ppy）3：Ir（piq）3 dopants for green：red EML （GR-EML） with N,N＇-dicarbazolyl-3, 5-benzene （mCP） as host material. Thicknesses of B-EML and GR-EML are adjusted to form a narrow recombination zone at two EML＇s interface and charge trapping happens in EML according to wide highest occupied molecular orbital and/or lowest unoccupied molecular orbital energy band gap of mCP and smaller energy band gap of dopants. The total thickness of both EMLs is fixed at 30 nm in the device structure of ITO （150 nm）/MoO3 （2 nm）/N,N＇-diphenyl-N,N＇-bis（1-naphthyl-phenyl）-（1,1″-biphenyl）-4, 4＇-diamine （70 nm）/ meP：Firpic-8.0% （12 nm）/mCP：Ir（ppy）3-3.0%：Ir（piq）3-1.5% （18 nm）/2″,2＇,2＂＇-（1,3,5-benzinetriyl）-tris（1- phenyl-l-H-benzimidazole） （30 nm）/8-hydroxyquinolinolato-lithium （2 nm）/A1 （120 nm）. White PHOLED shows 18.25 cd/A of luminous efficiency and white color coordinates of （0.358 and 0.378） at 5000 cd/m2 and color stability with slight CIExy change of （0.028 and 0.002） as increasing luminance from 1000 to 5000 cd/m^2.

Efficient top-emitting white organic light emitting device with an extremely stable chromaticity and viewing-angle

In this paper,we report on the fabrication of a top-emitting electrophosphorescent p-i-n white organic lightemitting diode on the basis of a low-reflectivity Sm/Ag semi-transparent cathode together with a thickness-optimized ZnS out-coupling layer.With a 24-nm out-coupling layer,the reflectivity of the cathode is reduced to 8% at 492 nm and the mean reflectivity is 24% in the visible area.By introducing an efficient electron blocking layer tris（1phenylpyrazolato,N,C2 ＇）iridium（III）（Ir（ppz） 3） to confine the exciton recombination area,the current efficiency and the colour stability of the device are effectively improved.A white emission with the Ir（ppz） 3 layer exhibits a maximum current efficiency of 9.8 cd/A at 8 V,and the Commission Internationale de L＇Eclairage（CIE） chromaticity coordinates are almost constant during a large voltage change of 6 V-11 V.There is almost no viewing angular dependence in the spectrum when the viewing angle is no more than 45,with a CIE x,y coordinate variation of only（±0.0025,±0.0008）.Even at a large viewing angle（75）,the CIE x,y coordinate change is as small as（±0.0087,±0.0013）.

Highly efficient blue fluorescent OLEDs with doped double emitting layers based on p-n heterojunctions

We fabricate a kind of novel efficient blue fluorescent organic light emitting device（OLED） based on p-n heterojunctions composed of hole transporting layer（HTL） N,N ＇-bis（naphthalen-1-yl）-N,N ＇-bis（phenyl）-benzidine（NPB） and electron transporting layer（ETL） 4,7-diphnenyl-1,10-phenanthroline（BPhen）,into which a new blue material,DNCA（a derivation of N 6,N 6,N 12,N 12-tetrap-tolylchrysene-6,12-diamine）,is partially doped simultaneously,and double emitting layers are configured.With a turn-on voltage of 2.6 V at 1 cd/m 2,this type of OLED presents a maximum luminance efficiency（η max） of 8.83 cd/A at 5.818 mA/cm 2 and a maximum luminance of over 40000 cd/m 2.Meanwhile,the Commission Internationale De L＇Eclairage（CIE） coordinates of this device change slightly from（0.13,0.27） to（0.13,0.23） as the driving voltage increases from 3 V to 11 V.This improvement in the electroluminescent characteristics is attributed mainly to the ideal p-n heterojunction which can confine and distribute excitons evenly on two sides of the heterojunction interface so as to improve the carrier combination rate and expand the light-emitting region.

MoO_(x) and V_(2)O_(x) as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices

To achieve fabrication and cost competitiveness in organic optoelectronic devices that include organic solar cells(OSCs)and organic light-emitting diodes(OLEDs),it is desirable to have one type of material that can simultaneously function as both the electron and hole transport layers(ETLs and HTLs)of the organic devices in all device architectures(i.e.,normal and inverted architectures).We address this issue by proposing and demonstrating Cs-intercalated metal oxides(with various Cs mole ratios)as both the ETL and HTL of an organic optoelectronic device with normal and inverted device architectures.Our results demonstrate that the new approach works well for widely used transition metal oxides of molybdenum oxide(MoOx)and vanadium oxide(V_(2)O_(x)).Moreover,the Cs-intercalated metaloxide-based ETL and HTL can be easily formed under the conditions of a room temperature,water-free and solution-based process.These conditions favor practical applications of OSCs and OLEDs.Notably,with the analyses of the Kelvin Probe System,our approach of Cs-intercalated metal oxides with a wide mole ratio range of transition metals(Mo or V)/Cs from 1:0 to 1:0.75 can offer significant and continuous work function tuning as large as 1.31 eV for functioning as both an ETL and HTL.Consequently,our method of intercalated metal oxides can contribute to the emerging large-scale and low-cost organic optoelectronic devices.

低阈值980nm单模半导体激光器

通过数值模拟和实验手段相结合的方法,优化了980 nm单模半导体激光器结构。给出了一种通过计算脊波导单模激光器的光场和电流场的匹配关系来预测芯片阈值电流变化规律的方法。采用金属有机物化学气相淀积方法生长了带有腐蚀停止层的Al Ga As/In Ga As量子阱结构激光二极管外延片,通过腐蚀停止层实现了对芯片脊波导深度的精确控制,芯片的一致性显著提高。980 nm单模半导体激光器芯片的阈值电流为11 m A,在注入电流为100 m A条件下,其光功率为93 m W,快慢轴方向远场发散角分别为40°和8°。

单层OLED器件模型的MATLAB分析计算

近年来有机发光二极管(OLED)的工业应用特别是在平板显示器中的应用已被广泛研究。OLED发光是分别由阴极和阳极注入的电子和空穴在发光层中复合的结果。单层结构是OLED器件的基础。为了提高OLED器件的性能,需要详细理解电荷载流子的注入过程。借助MATLAB求解了无量纲单层OLED器件模型,介绍了有关分析计算方法和技巧。综合利用MATLAB提供的符号求解常微分方程、绘图等命令,可使工作量大为减少。该方法具有编程简单,使用方便、实用性强等特点。

温度对单层有机电致发光器件电流平衡因子的影响（英文）

考虑有机薄膜中的陷阱,建立单层双极性有机发光器件的电学模型,研究了在不同的载流子迁移率和注入势垒条件下,器件工作温度对器件电流平衡因子的影响.研究表明:在低温工作区,当电子注入势垒和空穴注入势垒相等时,器件的电流平衡因子最大;在高温工作区,当电子迁移率大于空穴迁移率时,若电子注入势垒大于空穴注入势垒,器件的电流平衡因子最大,而当电子迁移率小于空穴迁移率时,情况恰好相反;当电子迁移率等于空穴迁移率时,电子注入势垒和空穴注入势垒相等时器件的电流平衡因子最大.此外,器件的电流平衡因子随着器件工作温度的升高而逐渐增大.可对设计高性能有机发光器件提供一定的理论参考.