50-110 GHz,high isolation,and high-power linearity single-pole double-throw switch utilizing 100-nm GaN HEMT technology

This article presents the design and performance of a single-pole double-throw(SPDT)switch operating in 50-110 GHz.The switch is fabricated in a 100-nm GaN high-electron-mobility transistors(HEMT)technology.To realize high-power capability,the dimensions of GaN HEMTs are selected by simulation verification.To enhance the isolation,an improved structure of shunt HEMT with two ground holes is employed.To extend the operation bandwidth,the SPDT switch with multi-section resonant units is proposed and analyzed.To verify the SPDT switch design,a prototype operating in 50-110 GHz is fabricated.The measured results show that the fabricated SPDT switch monolithic microwave integrated circuit(MMIC)achieves an input 1 dB compression point(P_(1dB))of 38 dBm at 94 GHz,and isolation within the range of 33 dB to 54 dB in 50-110 GHz.The insertion loss of the switch is less than 2.1 dB,while the voltage standing wave ratios(VSWR)of the input port and output port are both less than 1.8 in the operation bandwidth.Based on the measured results,the presented SPDT switch MMIC demonstrates high power capability and high isolation compared with other reported millimeter-wave SPDT MMIC designs.

A novel multifunctional electronic calibration kit integrated by MEMS SPDT switches

Design and simulation results of a novel multifunctional electronic calibration kit based on microelectromechanical system(MEMS)single-pole double-throw(SPDT)switches are presented in this paper.The short-open-load-through(SOLT)calibration states can be completed simultaneously by using the MEMS electronic calibration,and the electronic calibrator can be reused 10^(6) times.The simulation results show that this novel electronic calibration can be used in a frequency range of 0.1 GHz–20 GHz,the return loss is less than 0.18 dB and 0.035 dB in short-circuit and open-circuit states,respectively,and the insertion loss in through(thru)state is less than 0.27 dB.On the other hand,the size of this novel calibration kit is only 6 mm×2.8 mm×0.8 mm.Our results demonstrate that the calibrator with integrated radiofrequency microelectromechanical system(RF MEMS)switches can not only provide reduced size,loss,and calibration cost compared with traditional calibration kit but also improves the calibration accuracy and efficiency.It has great potential applications in millimeter-wave measurement and testing technologies,such as device testing,vector network analyzers,and RF probe stations.

Single Wire Electrical System

The purpose of this article is to remind of the past and present problems of creating single wire electrical systems. This article presents a new one wire electrical transmission system named B-Line which uses one line only and does not use ground as a second line. The proposed method is to work on all frequencies and on all communication systems including DC systems. It also proposes to work on the concept of the single-pole signal source and single-pole signal load. It illustrates the possibility of cutting the cost of electrical lines and several other advantages in the fields of high frequency communication lines and antennas.

A Digital Controller Design Method to Improve Performance of PFC Converter

With the rapid development of digital signal processing chip in recent years, DSP began to be used in more switching power supply. The advantages of digital control of their own, making the digital control PFC become a hotspot research. However, compared with the simulation system, the digital control technology still has many problems. In this paper, the problem of digital PI compensator as a voltage compensator is discussed, and the Single-pole voltage loop compensator is used in digital control PFC circuit. Because current loop bandwidth is narrow, a method to expand current loop bandwidth is put forward. Output power 300 W of prototype is made, and experimental results verify the correctness of the theory.

A Novel Frequency Compensation Technique for Three-Stage Amplifier

A novel frequency compensation technique for three-stage amplifier with dual complex pole-zero (DCP) cancellation is proposed. It uses one pair of complex zeros to cancel one pair of complex poles, resulting in feature that frequency response of the three-stage amplifier exhibits that of a single-pole system. Thus the gain-bandwidth (GBW) is expected to be increased several times compared to the conventional nested miller compensation (NMC) approach. Moreover, this technique requires only one very small compensation capacitor even when driving a big load capacitor. A GBW 4.63 MHz, DC gain 100 dB, PM 90o and power dissipation 0.87 mW can be achieved for a load capacitor 100 pF with a single Miller compensation capacitor 2 pF at a ±1V supply in a standard 0.6-μm CMOS technology.

GaAs pHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications

A multi-band/multi-mode single-pole nine-throw (SP9T) switch for GSM/UMTS (global system for mobile communications/universal mobile telecommunication system) systems is demonstrated.The switch consists of a GaAs 0.5μm pseudomorphic high-electron mobility transistor (pHEMT) radio frequency (RF) switches module and Si complementary metal-oxide-semiconductor (COMS) digital module with an encoder and a DC boost circuit.High isolation and high linearity are achieved by a series-shunt switch structure and the DC boost circuit,respectively.The switch shows a measured insertion loss of 0.4 dB at 0.8 GHz for GSM transmit arms,0.7 dB at 0.9 GHz and 0.9 dB at 1.8 GHz for GSM receive arms,and 0.6 dB at 1.8 GHz for UMTS arms.The switch introduces 2nd and 3rd harmonic suppression levels less than 64 dBc at 37 dBm input power.Isolations between transmit and receive terminals are more than 48 dB when one transmit arm is activated.The size of the RF switches module is 1.5 mm×1.1 mm,and the size of the digital module is 1.3 mm×0.63 mm with gold bonding wires connecting these two modules.

A novel loss compensation technique analysis and design for 60 GHz CMOS SPDT switch

A novel loss compensation technique for a series-shunt single-pole double-throw （SPDT） switch is pre- sented operating in the 60 GHz. The feed-forward compensation network which is composed of an NMOS, a couple capacitance and a shunt inductance can reduce the impact of the feed forward capacitance to reduce the insertion loss and improve the isolation of the SPDT switch. The measured insertion loss and isolation characteristics of the switch somewhat deviating from the 60 GHz are analyzed revealing that the inaccuracy of the MOS model can greatly degrade the performance of the switch. The switch is implemented in TSMC 90-nm CMOS process and exhibits an isolation of above 27 dB at transmitter mode, and the insertion loss of 1.8-3 dB at 30--65 GHz by layout simulation. The measured insertion loss is 2.45 dB at 52 GHz and keeps 〈 4 dB at 30-64 GHz. The measured isolation is better than 25 dB at 30--64 GHz and the measured return loss is better than 10 dB at 30-65 GHz. A measured input 1 dB gain compression point of the switch is 13 dBm at 52 GHz and 15 dBm at 60 GHz. The simulated switching speed with rise time and fall time are 720 and 520 ps, respectively. The active chip size of the proposed switch is 0.5 × 0.95 mm2.

15158A SP6T RF switch based on IBM SOI CMOS technology

This paper presents the design of single-pole six-throw （SP6T） RF switch with IBM 0.18 #m SOI CMOS technology, which can be widely used in a wireless communication system with its high performance and low cost. The circuit is designed and simulated by using an idea that the total load is divided into six branches and SOI special structures. The insertion loss is less than 0.6 dB, isolation is more than 30 dB, the input power P0.1dB for 0.1 dB compression point is more than 37.5 dBm, IIP3 is more than 70 dBm, the 2nd and the 3rd harmonic compressions are more than 96 dBc, and the control voltage is （＋2.46 V, 0, -2.46 V） in the frequency from 0.1 to 2.7 GHz.