Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors(SiGe HBTs)can change with decreasing temperature from+20℃to-180℃.This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform.Firstly,when the temperature drops from+20℃to-140℃,the increased carrier mobility drives a slight increase in transient amplitude.However,as the temperature decreases further below-140℃,the carrier freeze-out brings about an inflection point,which means the transient amplitude will decrease at cryogenic temperatures.To better understand this result,we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt's new incomplete ionization model.The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional(2D)TCAD process simulation.In addition,we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions.The increase of the emitter-base junction's barrier height at low temperatures could suppress this electron-injection phenomenon.We have also optimized the built-in voltage equations of a high current compact model(HICUM)by introducing the impact of incomplete ionization.The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures,and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.

Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes

As integrated circuits scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes.The so-called single-event transient（SET） pulse quenching induced by single-event charge sharing collection has been widely studied. In this paper, SET pulse quenching enhancement is found in dummy gate isolated adjacent logic nodes compared with that isolated by the common shallow trench isolation（STI）. The physical mechanism is studied in depth and this isolation technique is explored for SET mitigation in combinational standard cells. Three-dimensional（3D） technology computer-aided design simulation（TCAD） results show that this technique can achieve efficient SET mitigation.

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

In this study, we investigate the single-event transient（SET） characteristics of a partially depleted silicon-on-insulator（PDSOI） metal-oxide-semiconductor（MOS） device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI devices.We use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor（p-BJT） effect by performing both a laser test and simulations.

Analysis of single-event transient sensitivity in fully depleted silicon-on-insulator MOSFETs

Based on 3 D-TCAD simulations, single-event transient(SET) effects and charge collection mechanisms in fully depleted silicon-on-insulator(FDSOI) transistors are investigated. This work presents a comparison between28-nm technology and 0.2-lm technology to analyze the impact of strike location on SET sensitivity in FDSOI devices. Simulation results show that the most SET-sensitive region in FDSOI transistors is the drain region near the gate. An in-depth analysis shows that the bipolar amplification effect in FDSOI devices is dependent on the strike locations. In addition, when the drain contact is moved toward the drain direction, the most sensitive region drifts toward the drain and collects more charge. This provides theoretical guidance for SET hardening.

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor （CMOS） technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor （PMOS） and an N metal-oxide semiconductor （NMOS） are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will irlcrease as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor

This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the singleevent transient(SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor(SiGe HBT).The ioninduced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design(TCAD) simulation.The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected.With a proton fluence of 5 × 1013 cm-2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation(DTI), where prompt funneling collection is the dominating mechanism.Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection.

The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs

This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect transistors（NMOSFETs）.Technology computer-aided design（TCAD） three-dimensional（3D） simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from-55℃ to 125℃,which is closely correlated with the NMOSFET sources.This reveals that the pulse width increases with temperature in dual-well due to the weakening of the anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.

The dual role of multiple-transistor charge sharing collection in single-event transients

As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients （SETs） due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal–oxide semiconductor field-effect transistor （PMOS FET）, but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies.

Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron–hole bilayer

The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear energy transfer(LET),characteristic radius,strike angle,electrode bias and hit location on SET response are evaluated in detail.The simulation results show that the peak value of transient drain current is up to 0.08 m A for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 Me V·cm^(2)/mg,which is much higher than the on-state current of EHBNTTFET.The SET response of EHBNT-TFET presents an obvious dependence on LET,strike angle,drain bias and hit location.As LET increases from 2 Me V·cm^(2)/mg to 10 Me V·cm^(2)/mg,the peak drain current increases monotonically from 0.015 mA to 0.08 mA.The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius.The peak drain current and collected charge increase by 0.014 mA and 0.06 fC,respectively,as the drain bias increases from 0.1 V to 0.9 V.Whether from the horizontal or the vertical direction,the most sensitive hit location is related to wt.The underlying physical mechanism is explored and discussed.

A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs

A radiation-hardened-by-design （RHBD） technique for phase-locked loops （PLLs） has been developed for single-event transient （SET） mitigation. By presenting a novel SET-resistant complementary current limiter （CCL） and implementing it between the charge pump （CP） and the loop filter （LPF）, the PLL＇s single-event susceptibility is significantly decreased in the presence of SETs in CPs, whereas it has little impact on the loop parameters in the absence of SETs in CPs. Transistor-level simulation results show that the CCL circuit can significantly reduce the voltage perturbation on the input of the voltage-controlled oscillator （VCO） by up to 93.1% and reduce the recovery time of the PLL by up to 79.0%. Moreover, the CCL circuit can also accelerate the PLL recovery procedure from loss of lock due to phase or frequency shift, as well as a single-event strike.

Analysis of process variations impact on the single-event transient quenching in 65 nm CMOS combinational circuits

Single-event transient pulse quenching （Quenching effect） is employed to effectively mitigate WSET （SET pulse width）. It en- hanced along with the increased charge sharing which is norm for future advanced technologies. As technology scales, param- eter variation is another serious issue that significantly affects circuit＇s performance and single-event response. Monte Carlo simulations combined with TCAD （Technology Computer-Aided Design） simulations are conducted on a six-stage inverter chain to identify and quantify the impact of charge sharing and parameter variation on pulse quenching. Studies show that charge sharing induce a wider WSET spread range. The difference of WSET range between no quenching and quenching is smaller in NMOS （N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor） simulation than that in PMOS＇ （P-Channel Met- N-Oxide-Semiconductor Field-Effect Transistor）, so that from parameter variation view, quenching is beneficial in PMOS SET mitigation. The individual parameter analysis indicates that gate oxide thickness （TOXE） and channel length variation （XL） mostly affect SET response of combinational circuits. They bring 14.58% and 19.73% average WSET difference probabilities for no-quenching cases, and 105.56% and 123.32% for quenching cases.

An online fast multi-track locating algorithm for high-resolution single-event effect test platform

To improve the efficiency and accuracy of single-event effect(SEE)research at the Heavy Ion Research Facility at Lanzhou,Hi’Beam-SEE must precisely localize the position at which each heavy ion hitting the integrated circuit(IC)causes SEE.In this study,we propose a fast multi-track location(FML)method based on deep learning to locate the position of each particle track with high speed and accuracy.FML can process a vast amount of data supplied by Hi’Beam-SEE online,revealing sensitive areas in real time.FML is a slot-based object-centric encoder-decoder structure in which each slot can learn the location information of each track in the image.To make the method more accurate for real data,we designed an algorithm to generate a simulated dataset with a distribution similar to that of the real data,which was then used to train the model.Extensive comparison experiments demonstrated that the FML method,which has the best performance on simulated datasets,has high accuracy on real datasets as well.In particular,FML can reach 238 fps and a standard error of 1.6237μm.This study discusses the design and performance of FML.

Mutation in the Agrobacterium his I gene enhances transient expression in pepper

Agrobacterium-mediated plant transformation is widely used in plant genetic engineering.However,its efficiency is limited by plant immunity against Agrobacterium.Chili pepper(Capsicum annuum L.)is an important vegetable that is recalcitrant to Agrobacterium-mediated transformation.In this work,Agrobacterium was found to induce a strong immune response in pepper,which might be the reason for T-DNA being difficult to express in pepper.An Agrobacterium mutant screen was conducted and a point mutation in the hisI gene was identified due to a weak immune response and enhanced transient expression mediated by this Agrobacterium mutant in pepper leaves.Further genetic analysis revealed that histidine biosynthesis deficiency caused by mutations in many genes of this pathway led to reduced pepper cell death,presumably due to reduced bacterial growth.However,mutation analysis of threonine and tryptophan biosynthesis genes showed that the biosynthesis of different amino acids may play different roles in Agrobacterium growth and stimulating the pepper immune response.The possible application of Agrobacterium amino acid biosynthesis mutations in plant biology was discussed.

Transient receptor potential channels as predictive marker and potential indicator of chemoresistance in colon cancer

Transient receptor potential(TRP)channels are strongly associated with colon cancer development and progression.This study leveraged a multivariate Cox regression model on publicly available datasets to construct a TRP channels-associated gene signature,with further validation of signature in real world samples from our hospital treated patient samples.Kaplan-Meier(K-M)survival analysis and receiver operating characteristic(ROC)curves were employed to evaluate this gene signature’s predictive accuracy and robustness in both training and testing cohorts,respectively.Additionally,the study utilized the CIBERSORT algorithm and single-sample gene set enrichment analysis to explore the signature’s immune infiltration landscape and underlying functional implications.The support vector machine algorithm was applied to evaluate the signature’s potential in predicting chemotherapy outcomes.The findings unveiled a novel three TRP channels-related gene signature(MCOLN1,TRPM5,and TRPV4)in colon adenocarcinoma(COAD).The ROC and K-M survival curves in the training dataset(AUC=0.761;p=1.58e-05)and testing dataset(AUC=0.699;p=0.004)showed the signature’s robust predictive capability for the overall survival of COAD patients.Analysis of the immune infiltration landscape associated with the signature revealed higher immune infiltration,especially an increased presence of M2 macrophages,in high-risk group patients compared to their low-risk counterparts.High-risk score patients also exhibited potential responsiveness to immune checkpoint inhibitor therapy,evident through increased CD86 and PD-1 expression profiles.Moreover,the TRPM5 gene within the signature was highly expressed in the chemoresistance group(p=0.00095)and associated with poor prognosis(p=0.036)in COAD patients,highlighting its role as a hub gene of chemoresistance.Ultimately,this signature emerged as an independent prognosis factor for COAD patients(p=6.48e-06)and expression of model gene are validated by public data and real-world patients.Overall,this bioinformatics study provides valuable insights into the prognostic implications and potential chemotherapy resistance mechanisms associated with TRPs-related genes in colon cancer.

Transient liquid phase bonding of DD5 superalloy using a designed interlayer: microstructure and mechanical properties

Nickel based single crystal superalloy is currently widely used as the material for turbine blades in aerospace engines.However,metallurgical defects during the manufacturing process and damage during harsh environmental service are inevitable challenges for turbine blades.Therefore,bonding techniques play a very important role in the manufacturing and repair of turbine blades.The transient liquid phase(TLP)bonding of DD5 Ni-based single crystal superalloy was performed using the designed H1 interlayer.A new third-generation Ni-based superalloy T1 powder was mixed with H1 powder as another interlayer to improve the mechanical properties of the bonded joints.The res-ults show that,such a designed H1 interlayer is beneficial to the improvement of shear strength of DD5 alloy bonded joints by adjusting the bonding temperature and the prolongation of holding time.The maximum shear strength at room temperature of the joint with H1 interlayer reached 681 MPa when bonded at 1260℃for 3 h.The addition of T1 powder can effectively reduce holding time or relatively lower bond-ing temperature,while maintaining relatively high shear strength.When 1 wt.%T1 powder was mixed into H1 interlayer,the maximum room temperature shear strength of the joint bonded at 1260℃reached 641 MPa,which could be obtained for only 1 h.Considering the bonding temperature and the efficiency,the acceptable process parameter of H1+5 wt.%T1 interlayer was 1240℃/2 h,and the room tem-perature shear strength reached 613 MPa.

Experimental characterization of the bipolar effect on P-hit single-event transients in 65 nm twin-well and triple-well CMOS technologies

Single-event charge collection is controlled by drift, diffusion and the bipolar effect. Previous work has established that the bipolar effect is significant in the p-type metal-oxide-semiconductor field-effect transistor(PMOS) in 90 nm technology and above. However, the consequences of the bipolar effect on P-hit single-event transients have still not completely been characterized in 65 nm technology. In this paper, characterization of the consequences of the bipolar effect on P-hit single-event transients is performed by heavy ion experiments in both 65 nm twin-well and triple-well complementary metal-oxide-semiconductor(CMOS) technologies. Two inverter chains with clever layout structures are explored for the characterization. Ge(linear energy transfer(LET) = 37.4 Me V cm^2/mg) and Ti(LET = 22.2 Me V cm^2/mg) particles are also employed. The experimental results show that with Ge(Ti) exposure, the average pulse reduction is 49 ps(45 ps) in triple-well CMOS technology and 42 ps(32 ps) in twin-well CMOS technology when the bipolar effect is efficiently mitigated. This characterization will provide an important reference for radiation hardening integrated circuit design.

On the analytical solution of transient friction in channel flows

The transient friction in channel mean flows is the sum of two contributions,i.e.,the underlying laminar flow(ULF)and the purely turbulent component(PTC),and the contributions are analyzed separately by theoretical experiments.It is found that,the transient friction may be higher or remarkably lower than that in equal-Reynolds number steady-state flows.The universal time constant for plane-parallel laminar flows is reported,and the role of the time constant in a turbulent mean flow is examined.It is shown that the time constant is related to the turbulence's frozen time.Finally,a study of the logarithmic layer during the transient flow is accomplished,which shows that the logarithmic layer is destroyed.

Study of the pressure transient behavior of directional wells considering the effect of non-uniform flux distribution

During the production,the fluid in the vicinity of the directional well enters the wellbore with different rates,leading to non-uniform flux distribution along the directional well.However,in all existing studies,it is oversimplified to a uniform flux distribution,which can result in inaccurate results for field applications.Therefore,this paper proposes a semi-analytical model of a directional well based on the assumption of non-uniform flux distribution.Specifically,the direction well is discretized into a carefully chosen series of linear sources,such that the complex well trajectory can be captured and the nonuniform flux distribution along the wellbore can be considered to model the three-dimensional flow behavior.By using the finite difference method,we can obtain the numerical solutions of the transient flow within the wellbore.With the aid of Green's function method,we can obtain the analytical solutions of the transient flow from the matrix to the wellbore.The complete flow behavior of a directional well is perfectly represented by coupling the above two types of transient flow.Subsequently,on the basis of the proposed model,we conduct a comprehensive analysis of the pressure transient behavior of a directional well.The computation results show that the flux variation along the direction well has a significant effect on pressure responses.In addition,the directional well in an infinite reservoir may exhibit the following flow regimes:wellbore afterflow,transition flow,inclined radial flow,elliptical flow,horizontal linear flow,and horizontal radial flow.The horizontal linear flow can be observed only if the formation thickness is much smaller than the well length.Furthermore,a dip region that appears on the pressure derivative curve indicates the three-dimensional flow behavior near the wellbore.

Transient NOE driven signal enhancement of INADEQUATE solid-state NMR spectroscopy for the structural analysis of rubbers

INADEQUATE(Incredible Natural Abundance DoublE QUAntum Transfer Experiment)is one of the most important techniques in revealing the carbon skeleton of organic solids in solid-state NMR spectroscopy.Nevertheless,its use for structural analysis is quite limited due to the low natural abundance of^(13)C-^(13)C connectivity(~0.01%)and thus low sensitivity.Particularly,in semi-solids like rubbers,the sensitivity will be further significantly reduced by the inefficient cross polarization from 1H to^(13)C due to molecular motions induced averaging of^(1)H-^(13)C dipolar couplings.Herein,in this study,we demonstrate that transient nuclear Overhauser effect(NOE)can be used to efficiently enhance^(13)C signals,and thus enable rapid acquisition of two-dimensional(2D)^(13)C INADEQUATE spectra of rubbers.Using chlorobutyl rubber as the model system,it is found that an overall signalto-noise ratio(SNR)enhancement about 22%can be achieved,leading to significant timesaving by about 33%as compared to the direct polarization-based INADEQUATE experiment.Further experimental results on natural rubber and ethylene propylene diene monomer(EPDM)rubber are also shown to demonstrate the robust performance of transient NOE enhanced INADEQUATE experiment.