Coordinate control strategy for stability operation of offshore wind farm integrated with Diode-rectifier HVDC

Due to low investment cost and high reliability,a new scheme called DR-HVDC(Diode Rectifier based HVDC)transmission was recently proposed for grid integration of large offshore wind farms.However,in this scheme,the application of conventional control strategies for stability operation face several challenges due to the uncontrollability of the DR.In this paper,a coordinated control strategy of offshore wind farms using the DR-HVDC transmission technology to connect with the onshore grid,is investigated.A novel coordinated control strategy for DR-HVDC is proposed based on the analysis of the DC current control ability of the full-bridge-based modular multilevel converter(FB-MMC)at the onshore station and the input and output characteristics of the diode rectifier at the offshore.Considering the characteristics of operation stability and decoupling between reactive power and active power,a simplified design based on double-loop droop control for offshore AC voltage is proposed after power flow and voltage–current(I–V)characteristics of the offshore wind farm being analyzed.Furthermore,the impact of onshore AC fault to offshore wind farm is analyzed,and a fast fault detection and protection strategy without relying on communication is proposed.Case studies carried out by PSCAD/EMTDC verify the effectiveness of the proposed control strategy for the start up,power fluctuation,and onshore and offshore fault conditions.

Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.

Test Research on the Treatment of Rectifier Diode Production Wastewater from a Company

Rectifier diode production wastewater that contains acid,alkali and heavy metal ions in a company was treated by using neutralization/coagulation sedimentation method.Firstly,pH of wastewater was adjusted via neutralization reaction,and then heavy metal ions(Cu^(2+),Cr^(2+)and Pb^(2+))were removed by adding coagulant PAC and flocculant PAM.Different acid-alkali neutralization reactions were conducted under the process condition to analyze and compare their neutralization effects.The results showed that removal rates of heavy metal ions were high after coagulation test:Cu^(2+),Pb^(2+)and Cr^(2+)contents dropped from 13.230,0.032,and 1.720mg/L to 0.3,0.001,and 0.24mg/L;besides,total iron,total manganese and turbidity all had very good removal effects.

Improved Full Bridge Converter with Low Peak Voltage on Rectifier Diodes

To suppress peak voltage on rectifier diodes in a full bridge( FB) converter,the mechanism of peak voltage was analyzed and an improved FB converter was proposed. One reason for peak voltage is the resonance of the transformer's leakage inductance and the rectifier diodes' junction capacitances. The other reason is that the fast reverse recovery current of the rectifier diodes flows through the transformer's leakage inductance. An H bridge composed of four diodes,an auxiliary inductance, and a clamping winding were adopted in the proposed converter,and peak voltage was suppressed by varying the equivalent inductance, principally in different operating modes. Experimental results demonstrate that the peak voltage of rectifier diodes decreases by 43%,the auxiliary circuit does not lead to additional loss, and the rising rate, resonant frequency,and amplitude of the rectifier diodes' voltage decrease.Peak voltage and electromagnetic interference( EMI) of rectifier diodes are suppressed.

Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes

The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied.We fabricated the PIN rectifier diodes with different initial oxygen concentrations,and analyzed the electrical properties,anisotropic preferred etching by means of optical microscopy,Fourier transform infrared spectroscopy and transmission electron microscopy.It is pointed out that the reverse leakage current increases exponentially with the increasing initial oxygen concentration.Furtherly,we researched and analyzed the mechanism of the effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diode.It is shown that the oxygen precipitations present in an "S" curve with increasing initial oxygen concentration after high temperature diffusion.The main reason is that the nucleation and growth of oxygen precipitation at high temperature induce bulk oxidation-induced defects (B-OSF),which are mainly dislocations,and a small amount of rod stacking faults.The density of B-OSF increases with the increasing initial oxygen concentration.The existence of B-OSF has great effects on the reverse leakage current of PIN rectifier diode.

High-Efficiency Rectifier for Wireless Energy Harvesting Based on Double Branch Structure

A rectifier circuit for wireless energy harvesting(WEH) with a wide input power range is proposed in this paper. We build up accurate models of the diodes to improve the accuracy of the design of the rectifier. Due to the nonlinear characteristics of the diodes, a new band-stop structure is introduced to reduce the imaginary part impedance and suppress harmonics. A novel structure with double branches and an optimized λ/4 microstrip line is proposed to realize the power division ratio adjustment by the input power automatically. The proposed two branches can satisfy the two cases with input power of-20 dBm to 0 dBm and 0 dBm to 15 dBm, respectively. Here, dBm = 10 log(P mW), and P represents power. An impedance compression network(ICN) is correspondingly designed to maintain the input impedance stability over the wide input power range. A rectifier that works at 2.45 GHz is implemented. The measured results show that the highest efficiency can reach 51.5% at the output power of 0 dBm and higher than 40% at the input power of-5 dBm to 12 dBm.

Lateralβ-Ga_(2)O_(3)Schottky barrier diode fabricated on(-201)single crystal substrate and its temperature-dependent current-voltage characteristics

Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of4.7 mΩ·cm^(2).Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga_(2)O_(3)SBD has a tremendous potential for future power electronic applications.

Design of a novel high holding voltage LVTSCR with embedded clamping diode

In order to reduce the latch-up risk of the traditional low-voltage-triggered silicon controlled rectifier(LVTSCR), a novel LVTSCR with embedded clamping diode(DC-LVTSCR) is proposed and verified in a 0.18-μm CMOS process. By embedding a p+implant region into the drain of NMOS in the traditional LVTSCR, a reversed Zener diode is formed by the p+implant region and the n+bridge, which helps to improve the holding voltage and decrease the snapback region.The physical mechanisms of the LVTSCR and DC-LVTSCR are investigated in detail by transmission line pulse(TLP)tests and TCAD simulations. The TLP test results show that, compared with the traditional LVTSCR, the DC-LVTSCR exhibits a higher holding voltage of 6.2 V due to the embedded clamping diode. By further optimizing a key parameter of the DC-LVTSCR, the holding voltage can be effectively increased to 8.7 V. Therefore, the DC-LVTSCR is a promising ESD protection device for circuits with the operation voltage of 5.5–7 V.

High performance lateral Schottky diodes based on quasi-degenerated Ga_2O_3

Ni/β-Ga_2 O_3 lateral Schottky barrier diodes(SBDs) were fabricated on a Sn-doped quasi-degenerate n^+-Ga_2 O_3(201)bulk substrate. The resultant diodes with an area of 7.85 ×10^(-5) cm^2 exhibited excellent rectifying characteristics with an ideality factor of 1.21, a forward current density(J) of 127.4 A/cm2 at 1.4 V, a specific on-state resistance(R_(on,sp)) of1.54 mΩ·cm^2,and an ultra-high on/off ratio of 2.1 ×10^(11) at±1 V. Due to a small depletion region in the highly-doped substrate, a breakdown feature was observed at-23 V, which corresponded to a breakdown field of 2.1 MV/cm and a power figure-of-merit(VB2/R_(on)) of 3.4×10~5 W/cm^2. Forward current-voltage characteristics were described well by the thermionic emission theory while thermionic field emission and trap-assisted tunneling were the dominant transport mechanisms at low and high reverse biases, respectively, which was a result of the contribution of deep-level traps at the metal-semiconductor interface. The presence of interfacial traps also caused the difference in Schottky barrier heights of 1.31 eV and 1.64 eV respectively determined by current-voltage and capacitance-voltage characteristics. With reduced trapping effect and incorporation of drift layers, the β-Ga_2 O_3 SBDs could further provide promising materials for delivering both high current output and high breakdown voltage.

Characterization of Self-driven Cascode-Configuration Synchronous Rectifiers

This paper presents a cascode configuration synchronous rectifier device based on silicon MOSFET and Schottky diode,which can replace traditional power diode directly.This structure has self-driven ability with simple external circuit,and the conduction characteristic is preferable to a power diode.Static characterization and switching behavior analysis of proposed structure are conducted in this paper.The switching process is illustrated in detail using real model which considers the parasitic inductances and the nonlinearity of junction capacitors.The real time internal voltage and current value during switching transition are deduced with the equivalent circuit.To validate the analysis,two voltage specification rectifiers are built.Finally,double-pulse test results and the practical design example verify the performance advantages of proposed structure.

A Comparison Study of Rectifier Designs for 2.45 GHz EM Energy Harvesting

Energy harvesting is a rapidly growing area in many scientific and engineering-related fields due to the demand for many applications. This paper focuses on the design and simulation of the voltage doubler rectifier circuit at 2.45 GHz operating frequency. The design of a rectifier is optimized based on the use of Schottky diode HSMS 286 B due to its low forward voltage at this frequency. 2 stages of the Schottky diode voltage doublers circuit are designed and simulated in this paper. The shunt capacitor and optimal load resistance are also introduced in the course to reduce signal loss. A multi-stage rectifier is used to produce maximum power conversion from AC to DC. The simulated results present that the maximum output voltage of 6.651 V with an input power of 25 dBm is produced, which presents a maximum power conversion efficiency of 73.13%, which applicable in small device applications.

The First Principle Study on C-doped Armchair Boron Nitride Nanoribbon Rectifier

The electronic transport properties of armchair-edged boron nitride nanoribbons（ABNNRs） devices were investigated by the first principle calculations. The calculated results show that the ABNNR device doped with carbon atoms in one of the electrodes acts as a high performance nanoribbon rectifier. It is interesting to find that there exists a particular bias-polarity-dependent matching band between two electrodes,leading to a similar current-voltage（I-V） behavior as conventional P-N diodes. The I-V behavior presents a linear positive-bias I-V characteristic,an absolutely negligible leakage current,and a stable rectifying property under a large bias region. The results suggest that C doping might be an effective way to raise ABNNRs devices＇ rectifying performance.

一种基于改进双二极管脉波倍增电路的串联型24脉波整流器

为了在不增加串联型12脉波整流器中移相变压器复杂度的前提下,有效地抑制整流器的输入电流谐波,该文提出一种基于改进双二极管脉波倍增电路(improved dual-diode pulse-doubling circuit,IDPC)的串联型24脉波整流器。提出的IDPC被安装在整流器的直流侧并由单相自耦变压器、平衡电抗器、2个电容器和2个辅助二极管组成。IDPC中的辅助二极管根据整流器中2个三相整流桥的输出电压和单相自耦变压器绕组电压之间的关系交替导通,使IDPC周期性工作在3种模态下,然后根据交直流侧电压和电流关系将整流器的脉波数从12增加到24,使得输入电流的THD减小为原来的二分之一,有效地抑制输入电流谐波。因IDPC中磁性器件的总容量仅为输出功率的2.35%,辅助二极管的电流应力仅为输出电流的6.8%,提出的方案具有电路结构简单、容量小,成本低和导通损耗小的优点。与类似结构相比,提出的整流器在中高压工业场合具有更好的应用前景。搭建了一台输出功率为1 kW的实验样机,实验结果验证了理论分析的有效性和正确性。

以二极管整流器为例的探索性仿真教学

二极管整流器属于不可控整流器,具有显著的非线性特性,在整流过程中存在许多难以理解的地方和难以发现的问题,属于教学难点。借助Matlab/Simulink仿真分析的灵活性,以二极管全桥整流器为背景探索如何深化仿真分析教学模式,给出具体的探索内容。结果表明,通过深化仿真分析,可以培养学生发现问题、分析问题和探究问题的能力,弥足单纯理论讲解的不足。

基于二极管整流器的双极型复合式海上换流站及其控制策略

为提高海上换流站的紧凑型性并降低换流站一次性投入成本,西门子公司提出了基于二极管整流器(diode rectifier,DR)的高压直流输电技术,在此基础上,国内外学者对其控制策略及各种串并联拓扑进行了研究,但仍存在结构复杂、可行性差、运行灵活性低等问题。为此,提出了基于二极管整流器的双极型复合式海上换流站拓扑,正负极分别采用模块化多电平换流器(modularmultilevelconverter,MMC)和DR,以充分利用MMC灵活可控和DR体积小、成本低、可靠性高的优点。为降低直流电缆输电损耗,提出了复合式换流站正负极功率平衡控制,将接地极电流控制在零附近,提高了输电效率,可将高压直流电缆所产生的损耗降低67.7%。设计了限功率控制,在发生直流非对称故障期间通过低速通信,可主动对风电场发出功率进行限制,防止了换流站过电流风险,提高了系统可靠性。最后通过PSCAD/EMTDC仿真分析对所提拓扑及其控制策略进行了可行性验证。

具备黑启动和构网能力的远海风电经DRU-MMC送出方案

由于具有成本低、体积重量小和可靠性高等特点,送端采用二极管整流器(DRU)、受端采用模块化多电平换流器(MMC)的送出方案在远海风电送出领域备受关注。鉴于DRU不能构建交流电网且无法倒送有功功率,文中提出一种具备黑启动和构网能力的远海风电经DRU-MMC送出方案。所提方案在DRU-MMC送出技术的基础上增加了常规小容量电压源型辅助换流器、耗能单元和必要的快速开关,通过直流海缆复用和快速开关倒闸重构拓扑,分别构建黑启动电源低压回路和风电传输高压回路,实现黑启动和功率传输2种工况在线切换;提出辅助换流器在不同运行阶段的构网控制策略,解决海上交流电网构建、DRU无功补偿和谐波抑制等问题,消除DRU-MMC送出方案对风电场类型的限制。最后,通过经济性分析和算例仿真,验证了所提方案的优越性和有效性。

面向环境射频能量收集的宽频整流电路

整流电路是射频能量回收系统的核心,能够将射频能量转换为直流。但由于整流电路中使用的二极管具有非线性特性,导致整流效率会随频率变化而降低。为解决这一问题,本文提出一种具有宽频带的整流电路,它通过采用与二极管串联的短路线、与二极管并联的开路线以及多级微带线结构来调整阻抗匹配,实现了在宽频带范围内的高转换效率。设计的整流电路在0 dBm的输入功率下,从1.7~2.7 GHz,均达到50%的整流转换效率,最高整流转换效率为63.3%。该宽带整流电路可以运用在无线能量收集系统中。

海上风电中频汇集不控整流系统谐波抑制

目前,深远海上风电换流站采用不控整流器的直流送出方案极大地提高了送出系统的可靠性和经济性。然而,不控整流器会产生大量谐波进而降低风电汇集系统输电能力。针对上述问题,这里提出一种改进电压控制策略,即在风机网侧变换器传统控制策略基础上增加抑制谐波电流的附加控制环,实现对谐波电流的主动抑制。此外,这里分析了谐波电流对变压器和换流器的功率损耗,通过抑制谐波电流进而减小功率损耗,提高输电能力。最后,通过仿真计算和实验验证,证实了改进电压控制策略的正确性和有效性。

跟构网换流器并联的海上DRU低频交流送出方案

基于不可控整流单元(DRU)的风电低频交流送出系统不具备功率返送的能力,需采用构网型换流器实现海上风电场的自组网。同时考虑传统跟网型换流器所具备的快速功率响应能力对海上风力发电带来的正面影响,以六相永磁同步电机构成的风电机组作为研究对象,阐明在风电机组内,采用两种控制策略的换流器并联经DRU低频交流送出系统的拓扑结构和运行特性。分别设计风电机组网侧换流器的构网型控制策略与跟网型控制策略,并在此基础上探讨两组网侧换流器之间的功率不平衡问题,进一步设计环流抑制策略,实现风电功率经DRU送出。通过搭建Simulink仿真模型和RT-LAB半实物仿真系统验证方案的可行性。

用于DR-HVDC系统连接的海上风电场电网形成控制方法

基于二极管整流器的高压直流DR-HVDC(diode-rectifer-based high voltage direct current)输电系统是一种很有前景的海上风电低成本接入方案,它可将风能从偏远的海上风电场输送到陆上电力系统。然而随着海上DR-HVDC系统的不断增多,可能会导致风机WT(wind turbine)的变流器控制难度增大,系统稳定性变差。基于此,提出了一种适用于DR-HVDC连接海上WT变流器的新型电网形成控制方法。该方法采用2个正序控制回路来调节WTs的输出有功功率,并维持海上交流电网的频率和电压,其中第一个控制器可将每台WT的有功功率误差调节为电压角偏差,从而造成系统频率偏差;第二个控制器通过调整WT的交流电压幅值以抵消频率偏差。变流器内部电流控制回路用于限制故障电流,并消除系统中的高频谐振。最后,通过故障穿越、WT功率变化、无功扰动和WTs停机4个方面的电磁暂态仿真,验证了所提控制方法的有效性和优越性。