新型应力发光材料Ca_(5)Ga_(6)O_(14):Sm^(3+)制备及其性能

采用高温固相法成功制备出新型Ca_(5-x)Ga_(6)O_(14):xSm^(3+)应力发光材料。通过X射线衍射、扫描电镜、漫发射光谱、光致激发和发射光谱、荧光衰减曲线、应力发光光谱和热释光光谱等测试详细研究了Ca_(5-x)Ga_(6)O_(14):xSm^(3+)的晶体结构、表面形貌、光致发光和应力发光性能及其发光机理。在404 nm激发下,Ca_(5-x)Ga_(6)O_(14):xSm^(3+)呈现出4个发射峰,分别位于562,599,642,715 nm,对应Sm^(3+)的^(4)G_(5/2)→6Hj(j=5/2,7/2,9/2,11/2)的特征发射。随着Sm^(3+)离子掺杂浓度的增加,发光强度先增强后减弱,在x=0.07时获得最强发射,且衰减时间从1.92 ms缩短至1.30 ms。在滑动摩擦激发下可获得Ca_(5-x)Ga_(6)O_(14):xSm^(3+)的应力发光发射带,且应力发光强度与施加应力满足线性增长,表明该材料在应力传感领域具有潜在应用价值。

反常热猝灭Sr_(2)Ga_(2)SiO_(7)∶Sm^(3)+红色荧光粉的合成及发光性能

采用高温固相法合成了系列Sr_(2-x)Ga_(2)SiO_(7)∶xSm^(3)+红色荧光粉,通过X射线衍射(XRD)、扫描电子显微镜(SEM)、光致发光(PL)光谱、高温荧光光谱、荧光量子效率和荧光衰减寿命等一系列表征手段对合成荧光粉的物相及晶体结构、发光性能和热稳定性进行研究。一系列结果表明,在404 nm紫外光激发下,Sr_(2-x)Ga_(2)SiO_(7)∶xSm^(3)+荧光粉在598 nm处发出明亮的红色光。Sr_(2-x)Ga_(2)SiO_(7)∶xSm^(3)+荧光粉发光强度随Sm^(3)+离子浓度变化,在x=0.03时发生浓度猝灭,是由电偶极-电偶极相互作用导致的。随着温度逐渐上升,系列荧光粉表现出反常的热猝灭现象,在393 K时发光强度达到最大,强度为室温下的102.5%;在473 K时,发光强度仍可以保持室温下的101.3%。此外,最佳样品的荧光量子效率可达72.5%。研究表明,Sr_(2-x)Ga_(2)SiO_(7)∶xSm^(3)+红色荧光粉是一种具有高热稳定性、高量子效率可用于WLED的发光材料。

Sm^(3+)掺杂Ba_(0.85)Ca_(0.15)Ti_(0.90)Zr_(0.10)O_(3)无铅多功能铁电陶瓷的储能和光致发光性能

通过高温固相反应法制备了Ba_(0.85)Ca_(0.15)Ti_(0.90)Zr_(0.10)O_(3)∶xSm^(3+)(BCTZ∶xSm^(3+),x=0.0%、0.2%、0.4%、0.6%、0.8%、1.0%,物质的量分数)陶瓷,系统研究了其微观形貌、铁电性能、储能性能和光致发光性能。研究表明,Sm^(3+)掺入后,陶瓷平均晶粒大小明显下降,致密度显著提高。所有陶瓷均表现出典型的铁电性。BCTZ∶xSm^(3+)陶瓷放电储能密度得到了极大的提高,BCTZ∶1.0%Sm^(3+)陶瓷放电储能密度较纯BCTZ陶瓷可提高约49.0%。此外,在408 nm光的激发下,BCTZ∶xSm^(3+)陶瓷在596 nm左右表现出强烈的橙红色发光,且发光强度相对可调性可达449%。

KY(CO_(3))_(2):Sm^(3+)新型红光荧光粉的制备及其发光性能研究

为解决白光LED中因蓝光芯片激发黄色荧光粉而导致显色指数较低问题,采用水热法制备一种新型红光荧光粉KY(CO_(3))_(2):Sm^(3+)。通过X射线粉末衍射、光致发光光谱、色度坐标及荧光寿命等表征手段研究样品的物相结构及其发光性能。结果表明:掺入Sm^(3+)后,KY(CO_(3))_(2)的晶体结构并没有发生改变。随着Sm^(3+)掺杂量的增加,荧光粉的发光强度先增强后减弱,最佳掺杂浓度为10%。Dexter理论分析表明,Sm^(3+)的浓度猝灭归因于电偶极-电偶极相互作用机制。以596 nm作为监测波长,KY(CO_(3))_(2):Sm^(3+)荧光粉激发峰主要包含402 nm (6H_(5/2)→4F_(7/2))和474 nm (6H_(5/2)→4I_(13/2)) 2波长,表明该荧光粉可以被商用紫外LED芯片和蓝光LED芯片有效激发。改变Sm^(3+)掺杂比例,荧光粉色度坐标值基本保持不变,均位于标准红光区,因此KY(CO_(3))_(2):Sm^(3+)红光荧光粉有望作为白光LED用红光荧光粉。

Sm^(3+)掺杂Na_(5)Y(MoO_(4))_(4-y)(WO_(4))_(y)高热稳定性荧光粉的制备及发光性能研究

本文采用高温固相法合成了一系列Na_(5)Y_(1-x)(MoO_(4))_(4-y)(WO_(4))y∶xSm^(3+)(x=0~0.10,y=0~4)橙红色荧光粉。通过粉末衍射、透射电镜、常温/变温荧光发射谱、荧光激发谱、荧光动态衰减曲线和CIE色度坐标等光谱手段对荧光粉样品的光谱性能进行了研究。粉末衍射结果表明,合成的样品相位与Na_(5)Y(MoO_(4))_(4)的标准相一致,Sm^(3+)掺杂与引入(WO_(4))2-均未改变材料的相结构。在波长为406 nm光源的激发下,Na_(5)Y0.92(MoO_(4))3WO_(4)∶0.08Sm^(3+)荧光粉在643 nm附近橙红色荧光发射强度最高,继续增加Sm^(3+)的掺杂浓度,存在荧光猝灭现象,浓度猝灭的主要原因归为电偶极-电偶极相互作用。研究发现,Na_(5)Y(MoO_(4))_(4)基质中掺杂Sm^(3+)会引起电负性改变和晶格畸变,在Na_(5)Y_(1-x)(MoO_(4))_(4)∶xSm^(3+)中引入(WO_(4))2-阴离子基团,可以弥补因掺杂Sm^(3+)出现的缺陷,改善Na_(5)Y(MoO_(4))_(4)∶xSm^(3+)荧光粉的发光性能。在300~440 K,样品具有优异的热稳定性,荧光发射强度均超过室温时的96%;其CIE色度坐标均位于橙红光区域。以上结果表明新型Na_(5)Y_(1-x)(MoO_(4))_(4-y)(WO_(4))y∶xSm^(3+)橙红色荧光粉在WLED应用上有潜在价值。

Ba_(3-x)B_(6)Si_(2)O_(16)∶xSm^(3+)发光材料的制备及其性能表征

采用高温固相法制备Ba_(3)B_(6)Si_(2)O_(16)∶Sm^(3+)系列发光材料的荧光粉样品,对其进行粉末X射线衍射、荧光光谱、固体紫外-可见漫反射等相关性能的研究与表征,探讨不同的Sm^(3+)离子浓度对Ba_(3-x)B_(6)Si_(2)O_(16)荧光粉发光性能的影响,并对其浓度猝灭机理进行讨论.实验表明,在405 nm近紫外光激发下,Ba_(3-x)B_(6)Si_(2)O_(16)∶xSm^(3+)系列发光材料能够同时发射出571 nm(黄光)和606 nm(橙光)荧光,分别对应于Sm^(3+)离子的4G_(5/2)→6H_(5/2)和4G_(5/2)→6H_(7/2)能级跃迁.当x=0.21时,Ba_(2.79)B_(6)Si_(2)O_(16)∶0.21Sm^(3+)荧光粉发光性能最强;继续增加掺杂Sm^(3+)离子的浓度,则出现浓度猝灭现象.其浓度猝灭机制可以通过相邻Sm^(3+)离子之间的相互作用来解释.所制备的Ba_(3)B_(6)Si_(2)O_(16)∶Sm^(3+)荧光粉可被近紫外光有效激发,在白光LED领域具有潜在的应用前景.

固态照明用Li_(2)Gd_(4)(MoO_(4))_(7):Sm^(3+)橙红色荧光粉的结构和发光特性

白光LED具有广阔的应用前景与市场需求,而红色荧光粉对改善器件性能至关重要.本文采用高温固相法制备了一系列Li_(2)Gd_(4-x)Sm_(x)(MoO_(4))_(7)(x=0.01—0.13)荧光粉,利用X射线衍射、扫描电子显微镜、X射线光电子能谱和荧光光谱仪对样品进行了表征.在406 nm激发下,Li_(2)Gd_(4)(MoO_(4))_(7):Sm^(3+)荧光粉的发射峰分别位于563,598,645,706 nm处,这是由于Sm^(3+)的4f-4f跃迁引起的.当Sm^(3+)浓度为0.07时发光最强,浓度猝灭主要归因于电偶极-电偶极相互作用.随着Sm^(3+)浓度的增大,荧光寿命逐渐缩短.温度依赖性发射光谱研究发现,当温度为423 K时,Li_(2)Gd_(4)(MoO_(4))_(7):0.07Sm^(3+)的发射强度依然保持在298 K时的79%,显示了样品优良的热稳定性.CIE色度图确认了该荧光粉的发射位于橙红色区域.进一步利用最佳样品制作了白光LED,其CIE色坐标为(0.3788,0.3134),位于白光圈内.研究表明Li_(2)Gd_(4)(MoO_(4))_(7):Sm^(3+)荧光粉是一种很有前途的白光LED用橙红色荧光粉.

Self-assembled S-scheme In_(2.77)S_(4)/K^(+)-doped g-C_(3)N_(4)photocatalyst with selective O_(2) reduction pathway for efficient H_(2)O_(2) production using water and air

The development of an efficient artificial H_(2)O_(2) photosynthesis system is a challenging work using H_(2)O and O_(2) as starting materials.Herein,3D In_(2.77)S_(4) nanoflower precursor was in-situ deposited on K^(+)-doped g-C_(3)N_(4)(KCN)nanosheets using a solvothermal method,then In_(2.77)S_(4)/KCN(IS/KCN)het-erojunction with an intimate interface was obtained after a calcination process.The investigation shows that the photocatalytic H_(2)O_(2) production rate of 50IS/KCN can reach up to 1.36 mmol g^(-1)h^(-1)without any sacrificial reagents under visible light irradiation,which is 9.2 times and 4.1 times higher than that of KCN and In_(2.77)S_(4)/respectively.The enhanced activity of the above composite can be mainly attributed to the S-scheme charge transfer route between KCN and In_(2.77)S_(4) according to density functional theory calculations,electron paramagnetic resonance and free radical capture tests,leading to an expanded light response range and rapid charge separation at their interface,as well as preserving the active electrons and holes for H_(2)O_(2) production.Besides,the unique 3D nanostructure and surface hydrophobicity of IS/KCN facilitate the diffusion and transportation of O_(2) around the active centers,the energy barriers of O_(2) protonation and H_(2)O_(2) desorption steps are ef-fectively reduced over the composite.In addition,this system also exhibits excellent light harvesting ability and stability.This work provides a potential strategy to explore a sustainable H_(2)O_(2) photo-synthesis pathway through the design of heterojunctions with intimate interfaces and desired reac-tion thermodynamics and kinetics.

基于Sm^(3+)敏化的红色荧光粉Na_(5)Y(MoO_(4))_(4)∶Eu^(3+)发光性能研究

采用高温固相法制备了一系列新型Na_(5)Y_(1-x)(MoO_(4))_(4)∶x Eu^(3+)(x=0~0.14)和Na_(5)Y_(0.9)-y(MoO_(4))_(4)∶0.1Eu^(3+),y Sm^(3+)(y=0~0.08)红色荧光粉,并对Na_(5)Y_(1-x)(MoO_(4))_(4)∶x Eu^(3+)(x=0~0.14)和Na_(5)Y_(0.9)-y(MoO_(4))_(4)∶0.1Eu^(3+),y Sm^(3+)(y=0~0.08)的物相结构、发光性能、热稳定性、荧光寿命等性能进行了研究。结果表明,在单掺Eu^(3+)的条件下,Na_(5)Y_(1-x)(MoO_(4))_(4)∶x Eu^(3+)(x=0~0.14)荧光粉在395nm紫外光激发下,发射出峰值波长在615nm的强红光,其掺杂浓度为x=0.1,样品的发光强度最高。进一步探究Sm^(3+)对Eu^(3+)在Na_(5)Y_(1-x)(MoO_(4))_(4)∶x Eu^(3+)(x=0~0.14)中的敏化增强作用。通过研究该样品不同Sm^(3+)掺杂浓度下的荧光发射谱,发现Sm^(3+)敏化增强的最佳掺杂浓度为y=0.04;相较于单掺Eu^(3+)的样品,Sm^(3+)敏化后的样品其发光强度为原来的113.8%。Sm^(3+)敏化后的样品存在能量传递现象,能量传递机制为Eu^(3+)与Sm^(3+)之间的电偶极-电偶极相互作用。温度相关荧光发射谱实验结果表明Na_(5)Y_(0.86)(MoO_(4))_(4)∶0.1Eu^(3+),0.04Sm^(3+)具有较好的热稳定性,在437K时荧光发射强度约为室温时的70%左右,而Na_(5)Y_(0.9)(MoO_(4))_(4)∶0.1Eu^(3+)在437K时的荧光发射强度约为室温时的68%左右。因此,Sm^(3+)敏化的Eu^(3+)掺杂Na_(5)Y(MoO_(4))_(4)荧光粉在白光LED领域中具有较大的应用可能性。

First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material

This study delves into the charge transfer mechanism of boron (B)-doped 3C-SiC through first-principles investigations. We explore the effects of B doping on the electronic properties of 3C-SiC, focusing on a 12.5% impurity concentration. Our comprehensive analysis encompasses structural properties, electronic band structures, and charge density distributions. The optimized lattice constant and band gap energy of 3C-SiC were found to be 4.373 Å and 1.36 eV respectively, which is in agreement with previous research (Bui, 2012;Muchiri et al., 2018). Our results show that B doping narrows the band gap, enhances electrical conductivity, and influences charge transfer interactions. The charge density analysis reveals substantial interactions between B dopants and surrounding carbon atoms. This work not only enhances our understanding of the material’s electronic properties, but also highlights the importance of charge density analysis for characterizing charge transfer mechanisms and their implications in the 3C-SiC semiconductors.

碱金属掺杂对高温固相法制备的CaMoO_(4):Sm^(3+)荧光粉发光性质的影响

在无机发光材料领域里,值得注意的是具有稳定化学及物理性质的优良材料钼酸钙。本次研究使用高温固相法制备一系列单一基质Ca MoO_(4)掺杂Sm^(3+)的白光荧光粉,并使用XRD测试其物相结构,用激发和发射光谱测试发光性能。最终研究发现钼酸钙(CaMoO_(4))中Sm^(3+)掺杂浓度为0.020时,荧光粉发光性能最强。当进一步掺杂碱金属作电荷补偿剂时,CaMoO_(4):0.020Sm^(3+)的发光强度最优异,其中掺杂K^(+)的荧光粉样品具有最大的发光强度,表明这种荧光粉在发光二极管照明方面具有深远而广阔的发展前景。

基于Mg^(2+)电荷补偿的红色荧光粉Sr_(2)Ga_(2)GeO_(7):0.02 Sm^(3+)的可控光学调谐

为进一步改善红光荧光粉Sr_(2)Ga_(2)GeO_(7):0.02Sm^(3+)(SGGOS)的光谱性能和白光应用特性,以Mg^(2+)为电荷补偿离子对样品进行光学调谐,并通过高温固相法合成了一系列红光荧光粉Sr_(2)Ga_(2)GeO_(7):0.02Sm^(3+),x Mg^(2+)(0≤x≤0.12)。研究结果表明,Mg^(2+)可以成功引入样品SGGOS中并取代Ga^(3+),样品的晶粒尺寸约为1~10μm。荧光测试结果表明,Mg^(2+)可以增强激活离子Sm^(3+)的电荷传输效率,进而显著提升样品的荧光发射(PL)强度。此外,当Mg^(2+)的掺杂量为0.08时,样品Sr_(2)Ga_(2)GeO_(7):0.02Sm^(3+),0.08 Mg^(2+)(SGGOSM)的荧光发射强度最大。与参比样品SGGOS相比,荧光粉SGGOSM的光学带隙(E_(g))变大、色纯度提升、热稳定性增强,进而有效改善其在白光器件中的电致发光性能。基于SGGOSM为红光组分的白光器件(WLED)的显色指数(R_(a))高达90.5,色温(CCT)低至3563 K,与实验预期吻合,实现了Sm^(3+)掺杂红光荧光粉Sr_(2)Ga_(2)GeO_(7):0.02Sm^(3+)的有效光谱调控,为高R_(a)、低CCT类白光器件的研究提供了一定的实验和理论依据。

新型红色荧光粉Sr_(3)CaNb_(2)O_(9):Sm^(3+),Eu^(3+)的发光特性和能量传递分析

利用高温固相反应法制备一系列单基质荧光粉Sr_(3)CaNb_(2)O_(9):xSm^(3+),yEu^(3+)(x=0.04~0.09,y=0.03~0.15),并对样品的物相形貌、发光性能、能量传递机制和CIE色坐标进行分析。研究表明,Sr_(3)CaNb_(2)O_(9):xSm^(3+)荧光粉在激发波长为407 nm时的浓度淬灭点为x=0.07。在Sr_(3)CaNb_(2)O_(9):0.07Sm^(3+),yEu^(3+)荧光粉中,随着Eu^(3+)掺杂浓度的增加,Sm^(3+)的发光强度降低而Eu^(3+)发光强度却先增加后降低,Eu^(3+)的浓度淬灭点为y=0.09。Sm^(3+)→Eu^(3+)的能量传递以电偶极-电偶极相互作用为主,能量传递效率达到76.6%。色坐标图表明Eu^(3+)离子的加入可使色坐标从橙红色区域向纯红色区域移动。此外,样品还具有较高的色纯度和较低的色温。结果表明,Sr_(3)CaNb_(2)O_(9)∶Sm^(3+),Eu^(3+)荧光粉有望成为白光LED发出红光物质的候选材料。

GdPO_(4):Sm^(3+)荧光粉的焙烧温度和掺杂浓度的优化及发光和磁性能

以GdPO_(4)为基质,Sm^(3+)为激活剂,采用水热法合成了纳米荧光粉前驱体,分别在800、900、1000、1100和1200℃下焙烧,得到一系列GdPO_(4):Sm^(3+)荧光粉。首先探究了GdPO_(4):Sm^(3+)的最佳焙烧温度;其次研究了Sm^(3+)掺杂浓度对GdPO_(4):Sm^(3+)荧光性能的影响;最后研究了GdPO_(4):2%Sm^(3+)的高温荧光性能和磁性能。使用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、磁强计和荧光分光光度计(FL)对荧光粉的晶体结构、形貌、发光和磁性能进行了表征。结果表明:荧光粉的晶体结构由前驱体六方晶系GdPO_(4)·H_(2)O:Sm^(3+)变为单斜晶系的GdPO_(4):Sm^(3+),形貌由纳米棒变为无规则块体。当焙烧温度为1000℃,Sm^(3+)掺杂浓度为2%时,荧光粉的发光强度和荧光寿命达到最大值。GdPO_(4):2%Sm^(3+)中Sm^(3+)之间能量传递类型为电偶极-电偶极相互作用,能量传递的临界距离为1.646~1.884 nm。最佳样品Gd PO_(4):2%Sm^(3+)有优异的热稳定性,热猝灭活化能为-0.157 eV,且具有良好的顺磁性,质量磁化率为1.22×10^(-4)emu·g^(-1)·Oe^(-1)。

Sm^(3+)掺杂0.96Na_(0.5)Bi_(0.5)TiO_(3)-0.04CaTiO_(3)陶瓷的制备及光致发光性能研究

采用固相烧结法制备了一系列Sm^(3+)掺杂0.96Na_(0.5)Bi_(0.5)TiO_(3)-0.04CaTiO_(3)(NBT-0.04CT∶xSm^(3+),0.002≤x≤0.020)无铅陶瓷。通过X射线衍射仪表征样品的物相结构,所有样品均呈现单一钙钛矿结构。用荧光光谱仪测量样品的发光性能,样品在479 nm处激发峰最强,可与白光LED合成中使用的蓝色LED芯片相匹配。发射主峰位于597 nm(^(4)G_(5/2)→^(6)H_(7/9)),呈现强橙红色发光。NBT-0.04CT∶0.010Sm^(3+)陶瓷在Sm^(3+)掺杂NBT-0.04CT陶瓷中的发光性能最佳,且在278~473 K陶瓷样品的发光性能呈现良好的热稳定性。结果表明,NBT-0.04CT∶xSm^(3+)陶瓷在白光LED中具有广阔的应用前景。

新型橙红色荧光粉Ba_(3-x)S_(r)Nb_(2)O_(9):xSm^(3+)光致发光研究

采用高温固相法制备了一类新型橙红荧光粉Ba_(3-x)S_(r)Nb_(2)O_(9):xSm^(3+),通过XRD图谱鉴定了样品的纯相结构。根据激发发射光谱,紫外激发406 nm下,该荧光粉在596 nm处呈现出明亮的橙红光发射,Sm3+的猝灭浓度为0.04。结合变温光谱,分析得出在高温453 K下,其PL发射强度仍保持在室温下的76.5%,具有良好的热稳定性。此外,通过将样品与蓝色LED芯片简易封装,在激发电流160 mA下,Sm^(3+)掺杂荧光粉在色坐标(0.3314,0.3381)下发出明亮的白光,接近理想白光(x=0.33,y=0.33),显色指数高达93.3。结果表明,作为新型铌酸锶钡基质的荧光粉,在掺杂稀土Sm3+后,在紫外白光发光二极管(UV-WLEDs)中具有极高的应用可行性。

Fabrication of Gd_(2)O_(3)-doped CeO_(2)thin films through DC reactive sputtering and their application in solid oxide fuel cells

Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.

Sm^(3+)/Ce^(3+)共掺杂B_(2)O_(3)-Al_(2)O_(3)-SiO_(2)玻璃的结构和激光吸收性能

在硼铝硅酸盐玻璃(43B_(2)O_(3)-25Al_(2)O_(3)-32SiO_(2))中进行Sm^(3+)/Ce^(3+)共掺杂,采用固相熔融法制备(B_(2)O_(3)-Al_(2)O_(3)-SiO_(2))-20Sm_(2)O_(3)-x CeO_(2)(x为0~6%,摩尔分数)玻璃,借助X射线衍射、扫描电镜、X射线光电子能谱、紫外-可见-近红外分光光度计等表征方法研究玻璃的结构和激光吸收性能。结果表明,所有样品均为玻璃状,Sm^(3+)和Ce^(3+)均匀分布。随CeO_(2)的摩尔分数从0增加到2%,玻璃中桥氧的摩尔分数从60.12%增加到63.82%,而当CeO_(2)的摩尔分数增加到6%时,桥氧的摩尔分数下降到59.41%。CeO_(2)摩尔分数为2%时玻璃的激光吸收性能最好,漫反射吸收峰位为1076 nm,漫反射率为48.10%。Sm^(3+)/Ce^(3+)共掺杂的硼铝硅酸盐玻璃是一种很有前景的1.06μm波长激光的吸收材料。

NaY(MoO_(4))_(2):Sm^(3+)荧光材料的制备及其发光性能的研究

采用传统水热反应一步合成出一系列与基质同相的Sm^(3+)离子掺杂NaY(MoO_(4))_(2)荧光粉。XRD、SEM、粒度分布和发光光谱等测试结果表明,所得产物为具有四方白钨矿结构的微米颗粒,且当更多Sm^(3+)取代Y^(3+)离子后,会引起晶胞常数增大。此外,当引入EDTA-2Na后,其颗粒尺寸在减小的同时,形貌亦由八面体演变至长方体,这是EDTA-2Na控制颗粒生长以及对{001}晶面的优先作用吸附所致。最后,在814 nm近红外光激发下,可观察到565 nm绿光、600 nm橙光以及647 nm与706 nm处的红光发射,其中绿光发射源自Sm^(3+)的^(4)G_(5/2)→^(6)H_(5/2)跃迁,橙光由Sm^(3+)的^(4)G_(5/2)→^(6)H_(7/2)跃迁产生,而红光则分别归属于^(4)G_(5/2)→^(6)H_(9/2)和^(4)G_(5/2)→^(6)H_(11/2)跃迁。

Sm^(3+)离子激活Y_(2)MgTiO_(6)橙红色荧光粉的制备及发光性质研究

采用溶胶-凝胶法合成了一系列橙红色发光的Y_(2-2x)MgTiO_(6)∶2xSm^(3+)(YMT∶2xSm^(3+),0≤x≤0.11)荧光粉。通过粉末X射线衍射仪(XRD)、扫描电子显微镜(SEM)、光致发光激发和发射光谱对样品进行了表征分析。结果表明,所制备的YMT∶Sm^(3+)样品为纯相,无任何杂质;荧光粉颗粒尺寸为2~3μm,分散性较好且无明显团聚。在407 nm的近紫外光激发下,样品的发射光谱在500~700 nm波长范围内存在三个显著的发射峰,分别是603 nm(~4G_(5/2)→~6H_(7/2))和650 nm(~4G_(5/2)→~6H_(9/2))处较强的红光,以及566 nm(~4G_(5/2)→~6H_(5/2))处较弱的绿光。Sm^(3+)离子的最佳掺杂浓度为5 mol%,理论计算出Sm^(3+)离子的临界转移距离为1.619 nm。当Sm^(3+)浓度超过5 mol%时,出现明显的浓度猝灭效应,该效应归因于Sm^(3+)离子之间电四极子-电四极子(q-q)相互作用。YMT∶Sm^(3+)荧光粉的CIE色度坐标位于橙红光区域,是一种具有潜在应用价值的白光LED用红色荧光粉。