For the past few years,germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology.The main challenges in the development...For the past few years,germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology.The main challenges in the development of modern semiconductor spintronics are the generation,detection,and manipulation of spin currents.Here,the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures were investigated systematically.The effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were extracted.The spin-injection efficiency in the Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures is comparable to that of the Y_(3)Fe_(5)O_(12)/Pt bilayer,and the inverse spin Hall voltage exponential decays with the increase in the barrier thickness.Furthermore,the band gap of the GeBi layer was tuned by changing the Bi content.The spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi layer.Our results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials.展开更多
The magnetic anisotropy manipulation in the Sm_(3)Fe_(5)O_(12)(SmIG)films and its effect on the interfacial spin coupling in the CoFe/SmIG heterostructures were studied carefully.By switching the orientation of the Gd...The magnetic anisotropy manipulation in the Sm_(3)Fe_(5)O_(12)(SmIG)films and its effect on the interfacial spin coupling in the CoFe/SmIG heterostructures were studied carefully.By switching the orientation of the Gd_(3)Ga_(5)O_(12)substrates from(111)to(001),the magnetic anisotropy of obtained SmIG films shifts from in-plane to out-of-plane.Similar results can also be obtained in the films on Gd_(3)Ga_(5)O_(12)substrates,which identifies the universality of such orientation-induced magnetic anisotropy switching.Additionally,the interfacial spin coupling and magnetic anisotropy switching effect on the spin wave in CoFe/SmIG magnetic heterojunctions have also been explored by utilizing the time-resolved magneto-optical Kerr effect technique.It is intriguing to find that both the frequency and effective damping factor of spin precession in CoFe/SmIG heterojunctions can be manipulated by the magnetic anisotropy switching of SmIG films.These findings not only provide a route for the perpendicular magnetic anisotropy acquisition but also give a further path for spin manipulation in magnetic films and heterojunctions.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2021YFA0718701)the China Postdoctoral Science Foundation(Grant No.2022M722888)the National Natural Science Foundation of China(Grant Nos.12174347 and 12004340).
文摘For the past few years,germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology.The main challenges in the development of modern semiconductor spintronics are the generation,detection,and manipulation of spin currents.Here,the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures were investigated systematically.The effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were extracted.The spin-injection efficiency in the Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures is comparable to that of the Y_(3)Fe_(5)O_(12)/Pt bilayer,and the inverse spin Hall voltage exponential decays with the increase in the barrier thickness.Furthermore,the band gap of the GeBi layer was tuned by changing the Bi content.The spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi layer.Our results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFA0303603 and 2016YFA0401803)the National Natural Science Foundation of China(Grant Nos.U2032218,11574316,11874120,61805256,and 11904367)+1 种基金the Plan for Major Provincial Science&Technology Project(Grant No.202003a05020018)the Key Research Program of Frontier Sciences,CAS(Grant No.QYZDB-SSW-SLH011)。
文摘The magnetic anisotropy manipulation in the Sm_(3)Fe_(5)O_(12)(SmIG)films and its effect on the interfacial spin coupling in the CoFe/SmIG heterostructures were studied carefully.By switching the orientation of the Gd_(3)Ga_(5)O_(12)substrates from(111)to(001),the magnetic anisotropy of obtained SmIG films shifts from in-plane to out-of-plane.Similar results can also be obtained in the films on Gd_(3)Ga_(5)O_(12)substrates,which identifies the universality of such orientation-induced magnetic anisotropy switching.Additionally,the interfacial spin coupling and magnetic anisotropy switching effect on the spin wave in CoFe/SmIG magnetic heterojunctions have also been explored by utilizing the time-resolved magneto-optical Kerr effect technique.It is intriguing to find that both the frequency and effective damping factor of spin precession in CoFe/SmIG heterojunctions can be manipulated by the magnetic anisotropy switching of SmIG films.These findings not only provide a route for the perpendicular magnetic anisotropy acquisition but also give a further path for spin manipulation in magnetic films and heterojunctions.
