Effect of Sn doping concentration on the oxidation of Al-containing MAX phase(Ti_(3)AlC_(2))combining simulation with experiment

Sn doping is usually adopted to prepare Ti_(3)AlC_(2)in mass production because it can reduce the synthesis temperature while increasing the phase purity.However,excessive Sn doping usually deteriorates the oxidation resistance of Ti_(3)AlC_(2).Therefore,an appropriate Sn doping concentration is a vital issue.In this work,the effect of Sn doping concentration on the oxidation behavior of Ti_(3)AlC_(2)was systematically investigated by combining theoretical calculations and experimental methods.Density function theory calculations suggest that the oxygen adsorption mechanisms for the(001)surface of Ti_(3)AlC_(2)with and without Sn doping are similar,and Ti-O bonds are always preferentially formed.The molecular dynamics simulation further indicates that Al atoms have a faster diffusion rate during the oxidation process.Therefore,a continuous Al_(2)O_(3)layer can form rapidly at high temperature.Nevertheless,when the Sn doping concentration exceeds 10 mol%,the continuity of the Al_(2)O_(3)layer is destroyed,thereby impairing the oxidation resistance of Ti_(3)AlC_(2).Furthermore,oxidation experiments verify the above results.The oxidation mechanisms of Ti3AlC2 with different Sn doping concentrations are also proposed.

Preparation of Sn-doped Ga_(2)O_(3) thin films and their solar-blind photoelectric detection performance

Sn doping is an effective way to improve the response rate of Ga_(2)O_(3) film based solar-blind detectors. In this paper,Sn-doped Ga_(2)O_(3) films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga_(2)O_(3) films changed from amorphous to β-Ga_(2)O_(3) after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm.The β-Ga_(2)O_(3) had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm.The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga_(2)O_(3) thin film annealed in N_2 has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA,the photo dark current ratio is 1.7 × 10~6, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 10~3%, the specific detection rate is 2.61 × 10~(12) Jones, the response time and recovery time are 378 and 90 ms, respectively.

Phase Evolution and Magnetic Properties of Sn_(1-2x)Fe_xNb_xO_2(0.45≤x≤0.50)

Sn1-2xFexNbxO2（0.45≤x≤0.50） samples were prepared at 1000 ℃ via a simple chemical co-precipitation method.The effects of the concentrations of Sn doped on the structures and magnetic properties of the samples have been investigated.A systematic variation from monoclinic to orthorhombic FeNbO4 structure was observed with increasing Sn content.The phase evolutions were observed from monoclinic structure with x=0.50 to the coexistence of monoclinic and orthorhombic structures with x=0.48,0.47,0.46,and then to orthorhombic structure with x=0.45.Antiferromagnetic behavior was observed for all the samples,and the magnetic ordering temperatures decrease with increasing Sn concentration,which further indicated the sequence of phase transitions.The results suggest that the incorporation of Sn can stabilize the orthorhombic FeNbO4.

Simulated Sunlight Irradiation Based Photocatalytic Degradation of Acrylonitrile by Sn-F Co-doped TiO 2/SiO 2 Nano Powder Catalyst

This study proved the significance of simulated sunlight irradiation response capability of Sn-F co-doped TiO_(2)/SiO_(2)(Sn-F-TiO_(2)/SiO_(2))photocatalysts,which were prepared by a simple sol-gel method and were evaluated by acrylonitrile degradation for photocatalytic activity.The synthesized catalysts were characterized by X-ray Diffraction(XRD),Scanning Electron Microscopy(SEM),Energy Dispersive Spectrometer(EDS),X-ray Photoelectron Spectroscopy(XPS),Brunauer-Emmett-Teller(BET),Ultraviolet-Visible Absorption spectroscopy(UV-Vis),and Photoluminescence Spectroscopy(PL).UV-Visible spectroscopy demonstrated that Sn doping caused remarkable red shift in TiO_(2),which significantly increased the absorption efficiency of the catalysts.The XPS results showed that Sn was successfully doped into the TiO_(2) lattice.The photocatalytic degradation of acrylonitrile indicated that the Sn-F-TiO_(2)/SiO_(2) photocatalysts exhibited excellent photocatalytic activity when being annealed at 550℃for 2 h.The degradation rate of acrylonitrile reached 67.7%after irradiation under simulated sunlight for 6 min,and the hole was the most important active species.