The sputtered Sn-Al and Sn-Cu thin films were used to investigate the effects of the crystallization mechanism and film thickness on the electromagnetic interference （EMI） characteristics. In addition, the annealed ...The sputtered Sn-Al and Sn-Cu thin films were used to investigate the effects of the crystallization mechanism and film thickness on the electromagnetic interference （EMI） characteristics. In addition, the annealed microstructure, electrical conductivities and EMI characteristics of the Sn-xAl films and the Sn-xCu films were compared. The results show that the electromagnetic interference （EMI） shielding of Sn-Al film was increased after annealing. For the Sn-Cu films with higher Cu mole concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu mole concentration possesses excellent EMI shielding at lower frequencies, but has an inverse tendency at higher frequencies.展开更多
基金the Center for Micro/Nano Science and Technology,National Cheng Kung University(NCKU Project of Promoting Academic Excellence&Developing World Class Research Center:D97-2700)NSC98-2221-E-006-068NSC98-2622-E-006-024-CC3 for the financial support
文摘The sputtered Sn-Al and Sn-Cu thin films were used to investigate the effects of the crystallization mechanism and film thickness on the electromagnetic interference （EMI） characteristics. In addition, the annealed microstructure, electrical conductivities and EMI characteristics of the Sn-xAl films and the Sn-xCu films were compared. The results show that the electromagnetic interference （EMI） shielding of Sn-Al film was increased after annealing. For the Sn-Cu films with higher Cu mole concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu mole concentration possesses excellent EMI shielding at lower frequencies, but has an inverse tendency at higher frequencies.
