期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Electronic structure and optical property of p-type Zn-doped SnO_2 with Sn vacancy 被引量:2
1
作者 孙桂鹏 闫金良 +1 位作者 牛培江 孟德兰 《Journal of Semiconductors》 EI CAS CSCD 2016年第2期39-44,共6页
The electronic structures and optical properties of intrinsic SnO2, Zn-doped SnO2, SnO2 with Sn va- cancy (Vsn) and Zn-doped SnO2 with Sn vacancy are explored by using first-principles calculations. Zn-doped SnO2 is... The electronic structures and optical properties of intrinsic SnO2, Zn-doped SnO2, SnO2 with Sn va- cancy (Vsn) and Zn-doped SnO2 with Sn vacancy are explored by using first-principles calculations. Zn-doped SnO2 is a p-type semiconductor material, whose Fermi level shifts into the valence band when Zn atoms substitute Sn atoms, and the unoccupied states on the top of the valence band come from Zn 3d and O 2p states. Sn vacancies increase the relative hole number of Zn-doped SnO2, which results in a possible increase in the conductivity of Zn-doped SnO2. The Zn-doped SnO2 shows distinct visible light absorption, the increased absorption can be seen apparently with the presence of Sn vacancies in the crystal, and the blue-shift of optical spectra can be observed. 展开更多
关键词 sn02 crystal zinc doping tin vacancy electronic structure optical property
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部