期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Fabrication and Gas Response Characteristics of Metal Semiconductor Nanostructures Grown by Ambient Pressure
1
作者 Sang-Rok Lee Kap-Duk Song +3 位作者 Yang-Rye Lim Byung-Su Joo Myoung-Ho Sohn Duk-Dong Lee 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2006年第A03期182-184,共3页
SnO_2 nanowires and ZnO nanorods were grown on the surface of thin film by heat treatment of mental Sn and Zn under Ar gas flow and O_2 atmospheric pressure.The sensitivity of the SnO_2 thin film device on which grown... SnO_2 nanowires and ZnO nanorods were grown on the surface of thin film by heat treatment of mental Sn and Zn under Ar gas flow and O_2 atmospheric pressure.The sensitivity of the SnO_2 thin film device on which grown nanowires to CO gas(concentration of 5000μg/g)was 50% at the operating temperature of 200℃.In case of using Pt as catalysts,the sensitivity was enhanced and operating temperature was reduced(sensitivity of 70% at the operating temperature of 150℃). The sensitivity of the ZnO nanorods device using Cu as catalysts to NO_x gas was 90% at the operating temperature of 200℃.It was found that the sensitivity to CO and NO_x gases for the device on which grown nanostructures was much higher than those for general thin films devices. 展开更多
关键词 sno2 nanowires ZnO nanorods CO NO_x
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部