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Conduction Properties and Scattering Mechanisms in F-doped Textured Transparent Conducting SnO_2 Films Deposited by APCVD 被引量:1
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作者 Deheng ZHANG(Dept. of Physics, Shandong University, Jinan 250100, China)Honglei MA(Institute of Optoelectronic Materials and Devices, Shandong University, Jinan 250100, China) 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1997年第1期50-56,共7页
Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2... Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16~400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 :F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films. 展开更多
关键词 sno cm conduction Properties and Scattering Mechanisms in F-doped Textured Transparent conducting sno2 films Deposited by APCVD
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ZnO-SnO_2透明导电膜的低温制备及性质 被引量:13
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作者 黄树来 马瑾 +3 位作者 刘晓梅 马洪磊 孙征 张德恒 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第1期56-59,共4页
在室温下 ,采用射频磁控溅射法在 70 5 9玻璃衬底上制备出 Zn O- Sn O2 透明导电薄膜 .制备的薄膜为非晶结构 ,并且薄膜的电阻率强烈地依赖于溅射气体中的氧分压 .薄膜的最小电阻率为 7.2 7× 10 - 3Ω· cm,载流子浓度为4 .3&#... 在室温下 ,采用射频磁控溅射法在 70 5 9玻璃衬底上制备出 Zn O- Sn O2 透明导电薄膜 .制备的薄膜为非晶结构 ,并且薄膜的电阻率强烈地依赖于溅射气体中的氧分压 .薄膜的最小电阻率为 7.2 7× 10 - 3Ω· cm,载流子浓度为4 .3× 10 1 9cm- 3、霍尔迁移率为 2 0 .5 cm2 / (V· s) ,在可见光范围内的平均透过率达到了 90 % . 展开更多
关键词 透明导电膜 ZnO—sno2 射频磁控溅射
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用喷涂法和溶胶-凝胶工艺制备PT/SnO_2(Sb)/SiO_2薄膜 被引量:1
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作者 王世敏 王龙海 《湖北大学学报(自然科学版)》 CAS 1997年第3期233-235,共3页
用喷涂法在石英玻璃衬底上制备RS为100~200Ω/cm2的SnO2(Sb)透明导电薄膜,并且以SnO2(Sb)/SiO2为衬底和底电极,用Sol-Gel法制备PbTiO3(PT)薄膜.PT膜为多晶,与SnO2(Sb... 用喷涂法在石英玻璃衬底上制备RS为100~200Ω/cm2的SnO2(Sb)透明导电薄膜,并且以SnO2(Sb)/SiO2为衬底和底电极,用Sol-Gel法制备PbTiO3(PT)薄膜.PT膜为多晶,与SnO2(Sb)膜之间不存在界面反应. 展开更多
关键词 喷涂法 氧化锡 钛酸铅 薄膜 溶胶-凝胶法
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溶胶凝胶法制备SnO_2:Sb膜的光学电学性能 被引量:6
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作者 史金涛 赵高凌 +1 位作者 杜丕一 韩高荣 《太阳能学报》 EI CAS CSCD 北大核心 2003年第1期5-9,共5页
以金属无机盐SnCl2 ·2H2 O和SbCl3 为原料 ,用溶胶凝胶浸渍法制备掺锑SnO2 透明导电薄膜 ,并对其电学参数(如方块电阻、霍尔迁移率、载流子浓度和类型 )和光学参数 (如透射反射率、光学能隙 )进行测试分析。XPS分析确定薄膜中掺杂... 以金属无机盐SnCl2 ·2H2 O和SbCl3 为原料 ,用溶胶凝胶浸渍法制备掺锑SnO2 透明导电薄膜 ,并对其电学参数(如方块电阻、霍尔迁移率、载流子浓度和类型 )和光学参数 (如透射反射率、光学能隙 )进行测试分析。XPS分析确定薄膜中掺杂锑离子主要以Sb5+ 形式存在。薄膜的方块电阻最低可达 85Ω/□ ,霍尔迁移率在 2 .5~ 3.6cm2 V-1s-1,膜厚约1μm时可见光透射率约为 85 % ,反射率低于 15 %。 展开更多
关键词 溶胶凝胶 sno2:Sb 透明导电膜
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Ultraviolet-shielding and conductive double functional films coated on glass substrates by sol-gel process 被引量:2
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作者 董玉红 赵青南 +1 位作者 吴硕 卢秀强 《Journal of Rare Earths》 SCIE EI CAS CSCD 2010年第S1期446-450,共5页
Ultraviolet-shielding and conductive double functional films were composed of CeO2-TiO2 film and SnO2:Sb film deposited on glass substrates using sol-gel process.Ce(NO3)3·6H2O and Ti(C4H9O4),SnCl4 and SbCl3 were ... Ultraviolet-shielding and conductive double functional films were composed of CeO2-TiO2 film and SnO2:Sb film deposited on glass substrates using sol-gel process.Ce(NO3)3·6H2O and Ti(C4H9O4),SnCl4 and SbCl3 were used as precursors of the two different functional films respectively.The CeO2-TiO2 films were deposited on glass substrates by sol-gel dip coating method,and then the SnO2:Sb films with different thickness were deposited on the pre-coated CeO2-TiO2 thin film glass substrates,finally,the substrates coated with double functional films were annealed at different temperatures.The optical and electrical properties of the CeO2-TiO2 films and the double films were measured by UV-Vis spectrometer and four probe resistance measuring instrument.The crystal structures and surface morphology of the films were characterized using XRD and optical microscope,respectively.The obtained results show that the ultraviolet-shielding rate of the glass substrates with CeO2-TiO2 films is not less than 90%,and transmittance in visible lights can reach 65%.With the thickness of the SnO2:Sb film increasing,its conductivity became better,and the surface resistance is about 260 Ω/ when the SnO2:Sb films were deposited 11 cycles of the dip on the pre-coated CeO2-TiO2 glass.The ultraviolet-shielding rate of the glass substrates with double functional films is higher than 97%,and the peak transmittance in the visible lights is 72%.Additionally,with increasing the heat treatment time,the Na+ of the glass substrates diffuses into the films,resulting in the particle size of SnO2 crystal smaller. 展开更多
关键词 ultraviolet-shielding/conductive double functional films CeO2-TiO2 sno2:Sb Glass substrates sol-gel rare earths
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