SnS∶Ag thin films were deposited on ITO glasses by pulse electro-deposition. By studying the effect of duty cycle on the properties of SnS∶Ag thin films, the optimum off-time(toff) is obtained to be 5 s, namely, the...SnS∶Ag thin films were deposited on ITO glasses by pulse electro-deposition. By studying the effect of duty cycle on the properties of SnS∶Ag thin films, the optimum off-time(toff) is obtained to be 5 s, namely, the optimal duty cycle is about 67%. The primary phase of SnS∶Ag films deposited on optimum parameters condition is SnS compound with good crystallization, and the films prefer to grow towards (111) plane. The films are dense, smooth and uniform with good microstructure, and the grains in the films are densely packed together, and their direct bandgap is about 1.40 eV. In addition, the bandgap of the films first rises and then drops with the increase of the duty cycle.展开更多
SnS and Ag films were deposited on glass sub-strates by vacuum thermal evaporation tech-nique successively, and then the films were annealed at different temperatures (0-300℃) in N2 atmosphere for 2h in order to obta...SnS and Ag films were deposited on glass sub-strates by vacuum thermal evaporation tech-nique successively, and then the films were annealed at different temperatures (0-300℃) in N2 atmosphere for 2h in order to obtain sil-ver-doped SnS ( SnS:Ag ) films. The phases of SnS:Ag films were analyzed by X-ray diffraction (XRD) system, which indicated that the films were polycrystalline SnS with orthogonal struc-ture, and the crystallites in the films were ex-clusively oriented along the(111)direction. With the increase of the annealing temperature, the carrier concentration and mobility of the films first rose and then dropped, whereas their re-sistivity and direct band gap Eg showed the contrary trend. At the annealing temperature of 260℃, the SnS:Ag films had the best properties: the direct bandgap was 1.3 eV, the carrier con-centration was up to 1.132 × 1017 cm-3, and the resistivity was about 3.1 Ωcm.展开更多
Based on the first-principles plane wave pseudo-potential method, the electronic structure and electrochemical performance of LixSn4Sb4 （x=2, 4, 6, and 8） and LixSn12-xSb4 （x=9, 10, 11, and 12） phases were calcula...Based on the first-principles plane wave pseudo-potential method, the electronic structure and electrochemical performance of LixSn4Sb4 （x=2, 4, 6, and 8） and LixSn12-xSb4 （x=9, 10, 11, and 12） phases were calculated. A Sn-Sb thin film on a Cu foil was also prepared by radio frequency magnetron sputtering. The surface morphology, composition, and lithium intercalation/extraction behavior of the fabricated film were characterized by scanning electron microscopy （SEM）, X-ray diffraction （XRD） and cyclic voltammetry （CV）. Lithium atoms can easily insert into and extract out of the β-SnSb cell due to the low lithium intercalation formation energy. It is found that lithium atoms first occupy the interstitial sites, and then Sn atoms at the lattice positions are replaced by excessive lithium. The dissociative Sn atoms continue to produce different Li-Sn phases, which will affect the electrode stability and lead to the undesirable effect due to their large volume expansion ratio. The calculated lithium intercalation potential is stable at about 0.7 V, which is consistent with the experimental result.展开更多
Tin monosulphide(SnS) thin films capped by PVA have been successfully deposited on glass substrates for cost effective photovoltaic device applications by a simple and low-cost wet chemical process, chemical bath depo...Tin monosulphide(SnS) thin films capped by PVA have been successfully deposited on glass substrates for cost effective photovoltaic device applications by a simple and low-cost wet chemical process, chemical bath deposition(CBD) at different bath temperatures varying in the range, 50–80 °C. X–ray diffraction analysis showed that the deposited films were polycrystalline in nature, showing orthorhombic structure with an intense peak corresponding to(040) plane of SnS. These observations were further confirmed by Raman analysis. FTIR spectra showed the absorption bands which corresponds to PVA in addition to SnS.The scanning electron microscopy and atomic force microscopy studies revealed that the deposited SnS films were uniform and nanostructured with an average particle size of 4.9 to 7.6 nm. The optical investigations showed that the layers were highly absorbing with the optical absorption coefficient ～10~5 cm^(-1). A decrease in optical band gap from 1.92 to 1.55 eV with an increase of bath temperature was observed. The observed band gap values were higher than the bulk value of 1.3 eV, which might be due to quantum confinement effect. The optical band gap values were also used to calculate particle size and the results are discussed.展开更多
基金National Nature Sciences Funding of China(61076063)Key Project of Fujian Provincial Department of Science &Technology(2008I0019)Fujian Provincial Natural Science Foundation of China(2009J01285)
文摘SnS∶Ag thin films were deposited on ITO glasses by pulse electro-deposition. By studying the effect of duty cycle on the properties of SnS∶Ag thin films, the optimum off-time(toff) is obtained to be 5 s, namely, the optimal duty cycle is about 67%. The primary phase of SnS∶Ag films deposited on optimum parameters condition is SnS compound with good crystallization, and the films prefer to grow towards (111) plane. The films are dense, smooth and uniform with good microstructure, and the grains in the films are densely packed together, and their direct bandgap is about 1.40 eV. In addition, the bandgap of the films first rises and then drops with the increase of the duty cycle.
文摘SnS and Ag films were deposited on glass sub-strates by vacuum thermal evaporation tech-nique successively, and then the films were annealed at different temperatures (0-300℃) in N2 atmosphere for 2h in order to obtain sil-ver-doped SnS ( SnS:Ag ) films. The phases of SnS:Ag films were analyzed by X-ray diffraction (XRD) system, which indicated that the films were polycrystalline SnS with orthogonal struc-ture, and the crystallites in the films were ex-clusively oriented along the(111)direction. With the increase of the annealing temperature, the carrier concentration and mobility of the films first rose and then dropped, whereas their re-sistivity and direct band gap Eg showed the contrary trend. At the annealing temperature of 260℃, the SnS:Ag films had the best properties: the direct bandgap was 1.3 eV, the carrier con-centration was up to 1.132 × 1017 cm-3, and the resistivity was about 3.1 Ωcm.
基金supported by the National Nature Science Foundation of China (No.50771046)the Educational Commission of Guangdong Province,China (No.C10179)
文摘Based on the first-principles plane wave pseudo-potential method, the electronic structure and electrochemical performance of LixSn4Sb4 （x=2, 4, 6, and 8） and LixSn12-xSb4 （x=9, 10, 11, and 12） phases were calculated. A Sn-Sb thin film on a Cu foil was also prepared by radio frequency magnetron sputtering. The surface morphology, composition, and lithium intercalation/extraction behavior of the fabricated film were characterized by scanning electron microscopy （SEM）, X-ray diffraction （XRD） and cyclic voltammetry （CV）. Lithium atoms can easily insert into and extract out of the β-SnSb cell due to the low lithium intercalation formation energy. It is found that lithium atoms first occupy the interstitial sites, and then Sn atoms at the lattice positions are replaced by excessive lithium. The dissociative Sn atoms continue to produce different Li-Sn phases, which will affect the electrode stability and lead to the undesirable effect due to their large volume expansion ratio. The calculated lithium intercalation potential is stable at about 0.7 V, which is consistent with the experimental result.
文摘Tin monosulphide(SnS) thin films capped by PVA have been successfully deposited on glass substrates for cost effective photovoltaic device applications by a simple and low-cost wet chemical process, chemical bath deposition(CBD) at different bath temperatures varying in the range, 50–80 °C. X–ray diffraction analysis showed that the deposited films were polycrystalline in nature, showing orthorhombic structure with an intense peak corresponding to(040) plane of SnS. These observations were further confirmed by Raman analysis. FTIR spectra showed the absorption bands which corresponds to PVA in addition to SnS.The scanning electron microscopy and atomic force microscopy studies revealed that the deposited SnS films were uniform and nanostructured with an average particle size of 4.9 to 7.6 nm. The optical investigations showed that the layers were highly absorbing with the optical absorption coefficient ～10~5 cm^(-1). A decrease in optical band gap from 1.92 to 1.55 eV with an increase of bath temperature was observed. The observed band gap values were higher than the bulk value of 1.3 eV, which might be due to quantum confinement effect. The optical band gap values were also used to calculate particle size and the results are discussed.
基金supported by the Major Science and Technology Project of Precious Metal Materials Genetic Engineering in Yunnan Province,China(No.202002AB080001)the National Natural Science Foundation of China(No.52071002)the Natural Science Foundation of Anhui Province,China(No.2008085QE200)。
