A new high performance charge pump circuit is designed and realized in 0.18μm CMOS process. A wide input ranged rail-to-rail operational amplifier and self-biasing cascode current mirror are used to enable the charge...A new high performance charge pump circuit is designed and realized in 0.18μm CMOS process. A wide input ranged rail-to-rail operational amplifier and self-biasing cascode current mirror are used to enable the charge pump current to be well matched in a wide output voltage range.Furthermore,a method of adding a precharging current source is proposed to increase the initial charge current,which will speed up the settling time of CPPLLs.Test results show that the current mismatching can be less than 0.4%in the output voltage range of 0.4 to 1.7 V,with a charge pump current of 100μA and a precharging current of 70μA.The average power consumption of the charge pump in the locked condition is around 0.9 mW under a 1.8 V supply voltage.展开更多
The RF input cavity is an important component for velocity-modulating types of microwave device, providing velocity modulation and density modulation. Conventional RF input cavities, however, encounter the problem of ...The RF input cavity is an important component for velocity-modulating types of microwave device, providing velocity modulation and density modulation. Conventional RF input cavities, however, encounter the problem of power capacity in the high frequency band due to the scaling law of the working frequency and device size. In this paper, an X-band overmoded input cavity is proposed and investigated. A resonant reflector is employed to reflect the microwave and isolate the input cavity from the diode and RF extractor. The resonant property of the overmoded input cavity is proved by simulations and cold tests, with PIC simulation showing that with a beam voltage of 600 kV and current of 7 kA, an input power of 90 kW is sufficient to modulate the beam with a modulation depth of 3%.展开更多
基金Project supported by the National High Technology Research and Development Program of China(No.2007AA01Z2A7)
文摘A new high performance charge pump circuit is designed and realized in 0.18μm CMOS process. A wide input ranged rail-to-rail operational amplifier and self-biasing cascode current mirror are used to enable the charge pump current to be well matched in a wide output voltage range.Furthermore,a method of adding a precharging current source is proposed to increase the initial charge current,which will speed up the settling time of CPPLLs.Test results show that the current mismatching can be less than 0.4%in the output voltage range of 0.4 to 1.7 V,with a charge pump current of 100μA and a precharging current of 70μA.The average power consumption of the charge pump in the locked condition is around 0.9 mW under a 1.8 V supply voltage.
基金Supported by Talent Introduction Profect of Sichuan University of Science and Engineering(2013 RC09)
文摘The RF input cavity is an important component for velocity-modulating types of microwave device, providing velocity modulation and density modulation. Conventional RF input cavities, however, encounter the problem of power capacity in the high frequency band due to the scaling law of the working frequency and device size. In this paper, an X-band overmoded input cavity is proposed and investigated. A resonant reflector is employed to reflect the microwave and isolate the input cavity from the diode and RF extractor. The resonant property of the overmoded input cavity is proved by simulations and cold tests, with PIC simulation showing that with a beam voltage of 600 kV and current of 7 kA, an input power of 90 kW is sufficient to modulate the beam with a modulation depth of 3%.
