Perovskite solar cells(PSCs)have been developed over the past decade as the forefront of the state-of-theart photovoltaic technologies owing to their high efficiency and low cost,where nanostructured functional materi...Perovskite solar cells(PSCs)have been developed over the past decade as the forefront of the state-of-theart photovoltaic technologies owing to their high efficiency and low cost,where nanostructured functional materials play key roles in performance optimization.As a versatile class of two-dimensional(2D)materials,transition metal carbides/nitrides MXenes have gained enormous attentions in PSCs since 2018 due to their superior properties such as excellent metallic conductivity,abundant surface functional groups,tunable work functions,high optical transparency,and mechanical robustness.The explorations of MXenes are of significance in performance promotion and commercialization expansion of devices.As such,this review focuses on the diversified advantages of MXenes,comprehensively summarizing their applications and developments in PSCs as additives,electron/hole transporting layers,interfacial engineering layers,and electrodes in sequence and explaining the relevant mechanisms behind.Simultaneously,the problems emerged from the related studies are considered and the corresponding suggestions like opening up the type of MXenes usage,taking further insight of the modulation of surface termination groups on Fermi levels,understanding the effect on energy level structures of perovskite or other functional layers,and realizing commercialization,etc.are provided for the future in-depth explorations.This review is intended to provide overall perspective of the current status of MXenes and highlight the direction for the future advancements in MXenes design and processes towards efficient,stable,large-area,and low-cost PSCs.展开更多
Interdigitated back contact silicon hetero-junction(IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures.The front surface field(FSF) layer composed of electric field passivation and ...Interdigitated back contact silicon hetero-junction(IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures.The front surface field(FSF) layer composed of electric field passivation and chemical passivation has been proved to play an important role in IBC-SHJ solar cells.The electric field passivated layer n^+-a-Si: H, an n-type Si alloy with carbon or oxygen in amorphous phase, is simulated in this study to investigate its effect on IBC-SHJ.It is indicated that the n^+-a-Si: H layer with wider band gap can reduce the light absorption on the front side efficaciously,which hinders the surface recombination of photo-generated carriers and thus contributes to the improvement of the short circuit current density Jsc.The highly doped n^+-a-Si: H can result in the remakable energy band bending, which makes it outstanding in the field passivation, while it makes little contribution to the chemical passivation.It is noteworthy that when the electric field intensity exceeds 1.3 × 10^5 V/cm, the efficiency decrease caused by the inferior chemical passivation is only 0.16%.In this study, the IBC-SHJ solar cell with a front n^+-a-Si: H field passivation layer is simulated, which shows the high efficiency of 26% in spite of the inferior chemical passivation on the front surface.展开更多
In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junction...In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.展开更多
Last decade witnessed tremendous research and development in the area of photo-electrolytic hydrogen generation using chemically stable nanostructured photo-cathode/anode materials. Due to intimately coupled charge se...Last decade witnessed tremendous research and development in the area of photo-electrolytic hydrogen generation using chemically stable nanostructured photo-cathode/anode materials. Due to intimately coupled charge separation and photo-catalytic processes, it is very difficult to optimize individual components of such system leading to a very low demonstrated solar-to-fuel efficiency (SFE) of less than 1%. Recently there has been growing interest in an integrated photovoltaic–electrochemical (PV–EC) system based on GaAs solar cells with the demonstrated SFE of 24.5% under concentrated illumination condition. But a high cost of GaAs based solar cells and recent price drop of poly-crystalline silicon (pc-Si) solar cells motivated researchers to explore silicon based integrated PV–EC system. In this paper a theoretical framework is introduced to model silicon-based integrated PV–EC device. The theoretical framework is used to analyze the coupling and kinetic losses of a silicon solar cell based integrated PV–EC water splitting system under varying temperature and illumination. The kinetic loss occurs in the range of 19.1%–27.9% and coupling loss takes place in the range of 5.45%–6.74% with respect to varying illumination in the range of 20–100?mW/cm2. Similarly, the effect of varying temperature has severe impact on the performance of the system, wherein the coupling loss occurs in the range of 0.84%–21.51% for the temperature variation from 25 to 50?°C. ? 2016 Science Press展开更多
Chinese government has been devoting itself to the development of renewable energy sources. This paper describes the history, achievement and future trends of photovoltaic technology, and suggestions are proposed for ...Chinese government has been devoting itself to the development of renewable energy sources. This paper describes the history, achievement and future trends of photovoltaic technology, and suggestions are proposed for strengthening the research and development (R&D) ability of China.展开更多
该研究制备高电导、高透明的磷掺杂氢化纳米晶硅氧(nc-Si Ox:H)薄膜,应用于晶硅异质结(SHJ)太阳电池的窗口层以替代传统的氢化非晶硅(a-Si:H)薄膜。与以a-Si:H薄膜为窗口层的电池相比,短路电流密度提高0.5 m A/cm^(2),达到38.5 m A/cm^(...该研究制备高电导、高透明的磷掺杂氢化纳米晶硅氧(nc-Si Ox:H)薄膜,应用于晶硅异质结(SHJ)太阳电池的窗口层以替代传统的氢化非晶硅(a-Si:H)薄膜。与以a-Si:H薄膜为窗口层的电池相比,短路电流密度提高0.5 m A/cm^(2),达到38.5 m A/cm^(2),填充因子为82.7%,光电转换效率为23.5%。实验发现,在nc-Si Ox:H薄膜沉积前对本征非晶硅层表面进行处理,沉积1 nm纳米晶硅(nc-Si:H)种子层,可改善nc-Si Ox:H薄膜的晶化率,降低薄膜中的非晶相含量。与单层nc-Si Ox:H窗口层的电池相比,nc-Si:H/nc-Si Ox:H叠层结构提高电池填充因子,达到83.4%,光电转换效率增加了0.3%,达到23.8%。展开更多
In principle,conjugated polymers can work as electron donors and thus as low-cost p-type organic semiconductors to transport holes in photovoltaic devices.With the booming interests in high-efficiency and low-cost sol...In principle,conjugated polymers can work as electron donors and thus as low-cost p-type organic semiconductors to transport holes in photovoltaic devices.With the booming interests in high-efficiency and low-cost solar cells to tackle global climate change and energy shortage,hole transporting materials(HTMs)based on conjugated polymers have received increasing attention in the past decade.In this perspective,recent advances in HTMs for a range of photovoltaic devices including dye-sensitized solar cells(DSSCs),perovskite solar cells(PSCs),and silicon(Si)/organic heterojunction solar cells(HSCs)are summarized and perspectives on their future development are also presented.展开更多
基金supported by the National Key R&D Program of China (2021YFA0716404)the National Natural Science Foundation of China (51872043,51732003,11974129)+1 种基金the“111”project (B13013)the Jilin Province Development and Reform Commission (2022C040-1)。
文摘Perovskite solar cells(PSCs)have been developed over the past decade as the forefront of the state-of-theart photovoltaic technologies owing to their high efficiency and low cost,where nanostructured functional materials play key roles in performance optimization.As a versatile class of two-dimensional(2D)materials,transition metal carbides/nitrides MXenes have gained enormous attentions in PSCs since 2018 due to their superior properties such as excellent metallic conductivity,abundant surface functional groups,tunable work functions,high optical transparency,and mechanical robustness.The explorations of MXenes are of significance in performance promotion and commercialization expansion of devices.As such,this review focuses on the diversified advantages of MXenes,comprehensively summarizing their applications and developments in PSCs as additives,electron/hole transporting layers,interfacial engineering layers,and electrodes in sequence and explaining the relevant mechanisms behind.Simultaneously,the problems emerged from the related studies are considered and the corresponding suggestions like opening up the type of MXenes usage,taking further insight of the modulation of surface termination groups on Fermi levels,understanding the effect on energy level structures of perovskite or other functional layers,and realizing commercialization,etc.are provided for the future in-depth explorations.This review is intended to provide overall perspective of the current status of MXenes and highlight the direction for the future advancements in MXenes design and processes towards efficient,stable,large-area,and low-cost PSCs.
基金Project supported by the National Key Research Program of China(Grant Nos.2018YFB1500500 and 2018YFB1500200)the National Natural Science Foundation of China(Grant Nos.51602340,51702355,and 61674167)JKW Project,China(Grant No.31512060106)
文摘Interdigitated back contact silicon hetero-junction(IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures.The front surface field(FSF) layer composed of electric field passivation and chemical passivation has been proved to play an important role in IBC-SHJ solar cells.The electric field passivated layer n^+-a-Si: H, an n-type Si alloy with carbon or oxygen in amorphous phase, is simulated in this study to investigate its effect on IBC-SHJ.It is indicated that the n^+-a-Si: H layer with wider band gap can reduce the light absorption on the front side efficaciously,which hinders the surface recombination of photo-generated carriers and thus contributes to the improvement of the short circuit current density Jsc.The highly doped n^+-a-Si: H can result in the remakable energy band bending, which makes it outstanding in the field passivation, while it makes little contribution to the chemical passivation.It is noteworthy that when the electric field intensity exceeds 1.3 × 10^5 V/cm, the efficiency decrease caused by the inferior chemical passivation is only 0.16%.In this study, the IBC-SHJ solar cell with a front n^+-a-Si: H field passivation layer is simulated, which shows the high efficiency of 26% in spite of the inferior chemical passivation on the front surface.
文摘In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.
文摘Last decade witnessed tremendous research and development in the area of photo-electrolytic hydrogen generation using chemically stable nanostructured photo-cathode/anode materials. Due to intimately coupled charge separation and photo-catalytic processes, it is very difficult to optimize individual components of such system leading to a very low demonstrated solar-to-fuel efficiency (SFE) of less than 1%. Recently there has been growing interest in an integrated photovoltaic–electrochemical (PV–EC) system based on GaAs solar cells with the demonstrated SFE of 24.5% under concentrated illumination condition. But a high cost of GaAs based solar cells and recent price drop of poly-crystalline silicon (pc-Si) solar cells motivated researchers to explore silicon based integrated PV–EC system. In this paper a theoretical framework is introduced to model silicon-based integrated PV–EC device. The theoretical framework is used to analyze the coupling and kinetic losses of a silicon solar cell based integrated PV–EC water splitting system under varying temperature and illumination. The kinetic loss occurs in the range of 19.1%–27.9% and coupling loss takes place in the range of 5.45%–6.74% with respect to varying illumination in the range of 20–100?mW/cm2. Similarly, the effect of varying temperature has severe impact on the performance of the system, wherein the coupling loss occurs in the range of 0.84%–21.51% for the temperature variation from 25 to 50?°C. ? 2016 Science Press
文摘Chinese government has been devoting itself to the development of renewable energy sources. This paper describes the history, achievement and future trends of photovoltaic technology, and suggestions are proposed for strengthening the research and development (R&D) ability of China.
基金supported by the National Natural Science Foundation of China(Nos.21774015 and 21975027)NSFC-MAECI(No.51861135202).
文摘In principle,conjugated polymers can work as electron donors and thus as low-cost p-type organic semiconductors to transport holes in photovoltaic devices.With the booming interests in high-efficiency and low-cost solar cells to tackle global climate change and energy shortage,hole transporting materials(HTMs)based on conjugated polymers have received increasing attention in the past decade.In this perspective,recent advances in HTMs for a range of photovoltaic devices including dye-sensitized solar cells(DSSCs),perovskite solar cells(PSCs),and silicon(Si)/organic heterojunction solar cells(HSCs)are summarized and perspectives on their future development are also presented.
