Enhanced photoresponse performance in Ga/Ga_2O_3 nanocomposite solar-blind ultraviolet photodetectors

In the present work, we explore the solar-blind ultraviolet（UV） photodetectors（PDs） with enhanced photoresponse,fabricated on Ga/Ga2O3 nanocomposite films. Through pre-burying metal Ga layers and thermally post-annealing the laminated Ga2 O3/Ga/Ga2O3 structures, Ga/Ga2O3 nanocomposite films incorporated with Ga nanospheres are obtained. For the prototype PD, it is found that the photocurrent and photoresponsivity will first increase and then decrease monotonically with the thickness of the pre-buried Ga layer increasing. Each of all PDs shows a spectrum response peak at 260 nm, demonstrating the ability to detect solar-blind UV light. Adjustable photoresponse enhancement factors are achieved by means of the surface plasmon in the nanocomposite films. The PD with a 20 nm thick Ga interlayer exhibits the best solar-blind UV photoresponse characteristics with an extremely low dark current of 8.52 p A at 10-V bias, a very high light-to-dark ratio of ～ 8 × 10~5, a large photoresponsivity of 2.85 A/W at 15-V bias, and a maximum enhancement factor of ～ 220. Our research provides a simple and practical route to high performance solar-blind UV PDs and potential applications in the field of optoelectronics.

Solar-blind ultraviolet band-pass filter based on metal–dielectric multilayer structures

Solar-blind ultraviolet （UV） band-pass filter has significant value in many scientific, commercial, and military appli- cations, in which the detection of weak UV signal against a strong background of solar radiation is required. In this work, a solar-blind filter is designed based on the concept of ＂transparent metal＂. The filter consisting of Al/SiO2 multilayers could exhibit a high transmission in the solar-blind wavelength region and a wide stopband extending from near-ultraviolet to infrared wavelength range. The central wavelength, bandwidth, Q factor, and rejection ratio of the passband are numerically studied as a function of individual layer thickness and multilayer period.

Solar-blind ultraviolet photodetector derived from direct carrier transition beyond the bandgap of CdPS_(3) single crystals

Wide-bandgap semiconductors have demonstrated considerable potential for fabricating solar-blind ultraviolet (SBUV) photodetectors, which are extensively used in both civilian and military applications. Despite this promise, the limited variety of semiconductors with suitable bandgaps hampers the advancement of high-performance SBUV detectors. In this study, we synthesized CdPS_(3) transparent single crystals using the chemical vapor transport (CVT) method. Density functional theory (DFT) calculations suggest that the bandgap of CdPS_(3) decreases as the material’s thickness increases, a finding corroborated by subsequent absorption spectra and photoelectric response measurements. The as-prepared CdPS_(3) nanosheets were employed as channels in photodetectors, demonstrating outstanding photoelectric performance in the solar-blind ultraviolet range (at 254 and 275 nm) with high responsivity (0.3 A/W), high specific detectivity (5.5 × 10^(9) Jones), rapid response speed (2.6 ms/3.4 ms), and exceptionally low dark current (2 pA). It is noteworthy that these nanosheets exhibit almost no sensitivity to 365 nm and visible light irradiation, attributable to the direct carrier transition beyond the broad bandgap in CdPS_(3). Furthermore, high-quality imaging was achieved under different gate voltages using 275 nm ultraviolet light, underscoring the potential of CdPS_(3) as a new material for high-performance SBUV optoelectronic detection.

Multifunctional solar-blind ultraviolet photodetectors based on p-PCDTBT/n-Ga_(2)O_(3)heterojunction with high photoresponse

Solar-blind ultraviolet(UV)photodetectors based on p-organic/n-Ga_(2)O_(3) hybrid heterojunctions have attracted extensive attention recently.Herein,the multifunctional solar-blind photodetector based on p-type poly[N-90-heptadecanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)](PCDTBT)/n-type amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))is fabricated and investigated,which can work in the phototransistor mode coupling with self-powered mode.With the introduction of PCDTBT,the dark current of such the a-Ga_(2)O_(3)-based photodetector is decreased to 0.48 pA.Meanwhile,the photoresponse parameters of the a-Ga_(2)O_(3)-based photodetector in the phototransistor mode to solar-blind UV light are further increased,that is,responsivity(R),photo-detectivity(D*),and external quantum efficiency(EQE)enhanced to 187 A W^(-1),1.3×10^(16) Jones and 9.1×10^(4)% under the weak light intensity of 11μW cm^(-2),respectively.Thanks to the formation of the built-in field in the p-PCDTBT/n-Ga_(2)O_(3) type-Ⅱ heterojunction,the PCDTBT/Ga_(2)O_(3) multifunctional photodetector shows self-powered behavior.The responsivity of p-PCDTBT/n-Ga_(2)O_(3) multifunctional photodetector is 57.5 mA W^(-1) at zero bias.Such multifunctional p-n hybrid heterojunction-based photodetectors set the stage for realizing high-performance amorphous Ga_(2)O_(3) heterojunction-based photodetectors.

Enhanced back-illuminated Ga_(2)O_(3)-based solar-blind ultraviolet photodetectors

Ga_(2)O_(3)is a promising material for deep-ultraviolet(DUV)photodetectors due to its ultra-wide bandgap and high thermal and chemical stability.However,because of their relatively low responsivity,Ga_(2)O_(3)-based photodetectors still have difficulty meeting the requirements of practical applications.Here,we construct a high-performance Ga_(2)O_(3)photodetector realized by back-illumination.Utilizing high-crystallinity epitaxially grown Ga_(2)O_(3)as the DUV absorbing layer and the double-polished Al_(2)O_(3)substrate as the transparent window for injection of photons,the device operating in the back-illuminated mode exhibits a higher DUV photoresponse and faster response speed than in the front-illuminated mode.Therefore,our experimental results have led to the development of a novel strategy for designing and fabricating high-performance Ga_(2)O_(3)photodetectors.

Ultrasensitive solar-blind ultraviolet detection and optoelectronic neuromorphic computing using α-In_(2)Se_(3)phototransistors

Detection of solar-blind ultraviolet(SB-UV)light is important in applications like confidential communication,flame detection,and missile warning system.However,the existing SB-UV photodetectors still show low sensitivities.In this work,we demonstrate the extraordinary SB-UV detection performance of α-In_(2)Se_(3 )phototransistors.Benefiting from the coupled semiconductor and ferroelectricity property,the phototransistor has an ultraweak detectable power of 17.85 fW,an ultrahigh gain of 1.2×10^(6),a responsivity of 2.6×10^(5) A/W,a detectivity of 1.3×10^(16) Jones and an ultralow noise-equivalent-power of 4.2×10^(–20 )W/Hz1/2 for 275 nm light.Its performance exceeds most other UV detectors,even including commercial photomultiplier tubes and avalanche photodiodes.It can be also implemented as an optoelectronic synapse for neuromorphic computing.A 784×300×10 artificial neural network(ANN)based on this optoelectronic synapse is constructed and demonstrated with a high recognition accuracy and good noise-tolerance for the Fashion-MNIST dataset.These extraordinary features endow this phototransistor with the potential for constructing advanced SB-UV detectors and intelligent hardware.

10 × 10 Ga_(2)O_(3)-based solar-blind UV detector array and imaging characteristic

A 10 × 10 solar-blind ultraviolet(UV) imaging array with double-layer wire structure was prepared based on Ga_(2)O_(3) film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-todark current ratio(PDCR) of 5.5 × 10^(5), responsivity(R) of 4.28 A/W, external quantum efficiency(EQE) of 2.1 × 10^(3)%, detectivity(D*) of 1.5 × 10^(14) Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 ℃, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga_(2)O_(3) solarblind UV detectors.

High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.

240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effect

240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.

High performance solar-blind deep ultraviolet photodetectors viaβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single crystalline film

We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy(PA-MBE).The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector,which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure.The device exhibits a low dark current of 40 pA(0 V),while its UV photon responsivity exceeds 450 A/W(50 V)at the peak wavelength of 232 nm with illumination intensity of 0.21 m W/cm^(2)and the UV/VIS rejection ratio(R232 nm/R380 nm)exceeds 4×10^(4).Furthermore,the devices demonstrate ultrafast transient characteristics for DUV signals,with fast-rising and fast-falling times of 80 ns and 420 ns,respectively.This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga_(2)O_(3)alloys to enhance the performance of InGaO solar-blind detectors.Additionally,a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system.Our results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.

Ultraviolet‑Irradiated All‑Organic Nanocomposites with Polymer Dots for High‑Temperature Capacitive Energy Storage

Polymer dielectrics capable of operating efficiently at high electric fields and elevated temperatures are urgently demanded by next-generation electronics and electrical power systems.While inorganic fillers have been extensively utilized to improved high-temperature capacitive performance of dielectric polymers,the presence of thermodynamically incompatible organic and inorganic components may lead to concern about the long-term stability and also complicate film processing.Herein,zero-dimensional polymer dots with high electron affinity are introduced into photoactive allyl-containing poly(aryl ether sulfone)to form the all-organic polymer composites for hightemperature capacitive energy storage.Upon ultraviolet irradiation,the crosslinked polymer composites with polymer dots are efficient in suppressing electrical conduction at high electric fields and elevated temperatures,which significantly reduces the high-field energy loss of the composites at 200℃.Accordingly,the ultraviolet-irradiated composite film exhibits a discharged energy density of 4.2 J cm^(−3)at 200℃.Along with outstanding cyclic stability of capacitive performance at 200℃,this work provides a promising class of dielectric materials for robust high-performance all-organic dielectric nanocomposites.

Low-Voltage IGZO Field-Effect Ultraviolet Photodiode

In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.

Effect of Ultraviolet Radiation on Hsp70 Protein Expression in HaCaT Cells

Ultraviolet radiation by its wavelength is divided into: UVA, UVB and UVC. Only UVA and UVB manage to penetrate the ozone layer, but due to anthropological activities, all of them are capable of interacting with humans to a greater or lesser extent, and can generate adverse effects such as cellular stress when interacting with intra-and extracellular biomolecules. The skin is the first organ in contact with UV radiation, and the stress it generates can be analyzed by the expression of a bioindicator of cellular damage such as Hsp70. Therefore, the objective of the project was: to determine the effect of UVA, UVB and UVC radiation on HaCaT epithelial cells, by analyzing the expression of Hsp70. Materials and methods: HaCaT cells were cultured in vitro, which were irradiated with UVA, UVB and UVC light at different doses, to subsequently determine the degree of Hsp70 expression by Immunodetection by PAGE-SDS and Western Blot. Results: Basal expression of Hsp70 was observed in no irradiated HaCaT cells. When HaCaT cells were irradiated with UVA, UVB, UVC, an increase in this Hsp70 protein was observed. With UVA, a higher degree of expression was observed at a time of 30 minutes of irradiation. With UVB the highest expression shifted to a time of 20 minutes. With UVC, overexpression was observed after 10 minutes. Conclusion: UV radiation generates cellular stress on HaCaT cells, evaluated by the stress bioindicator Hsp70. According to the wavelength of UV radiation, those that have a shorter wavelength have a greater potential for cellular damage, such as UVC.

Ultraviolet Photodetector based on Sr_(2)Nb_(3)O_(10) Perovskite Nanosheets

Liquid-phase exfoliation was employed to synthesize Sr_(2)Nb_(3)O_(10) perovskite nanosheets with thicknesses down to 1.76 nm.Transmission electron microscopy(TEM),atomic force microscope(AFM),X-ray photoelectron spectrometer(XPS),and other characterization techniques were used to evaluate the atomic structure and chemical composition of the exfoliated nanosheets.A UV photodetector based on individual Sr_(2)Nb_(3)O_(10) nanosheets was prepared to demonstrate the application of an ultraviolet(UV) photodetector.The UV photodetector exhibited outstanding photocurrent and responsivity with a responsivity of 3×10^(5) A·W^(-1) at 5 V bias under 280 nm illumination,a photocurrent of 60 nA,and an on/off ratio of 3×10^(2).

Wavelength calibration and spectral analysis of vacuum ultraviolet spectroscopy in EAST

A vacuum ultraviolet(VUV)spectroscopy with a focal length of 1 m has been engineered specifically for observing edge impurity emissions in Experimental Advanced Superconducting Tokamak(EAST).In this study,wavelength calibration for the VUV spectroscopy is achieved utilizing a zinc lamp.The grating angle and charge-coupled device(CCD)position are carefully calibrated for different wavelength positions.The wavelength calibration of the VUV spectroscopy is crucial for improving the accuracy of impurity spectral data,and is required to identify more impurity spectral lines for impurity transport research.Impurity spectra of EAST plasmas have also been obtained in the wavelength range of 50–300 nm with relatively high spectral resolution.It is found that the impurity emissions in the edge region are still dominated by low-Z impurities,such as carbon,oxygen,and nitrogen,albeit with the application of fulltungsten divertors on the EAST tokamak.

Two-step growth of β-Ga_(2)O_(3) on c-plane sapphire using MOCVD for solar-blind photodetector

In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane sapphire.Optimized buffer layer growth temperature(T_(B))was found at 700℃ and theβ-Ga_(2)O_(3) film with full width at half maximum(FWHM)of 0.66°was achieved.A metal−semiconductor−metal(MSM)solar-blind photodetector(PD)was fabricated based on theβ-Ga_(2)O_(3) film.Ultrahigh responsivity of 1422 A/W@254 nm and photo-to-dark current ratio(PDCR)of 10^(6) at 10 V bias were obtained.The detectivity of 2.5×10^(15) Jones proved that the photodetector has outstanding performance in detecting weak signals.Moreover,the photodetector exhibited superior wavelength selectivity with rejection ratio(R_(250 nm)/R_(400 nm))of 105.These results indicate that the two-step method is a promising approach for preparation of high-qualityβ-Ga_(2)O_(3)films for high-performance solar-blind photodetectors.

Effect of combination of ultraviolet radiation and biocide on fungal-induced corrosion of high-strength 7075 aluminum alloy

The effect of ultraviolet(UV)radiation and biocide benzalkonium chloride(BKC)on fungal-induced corrosion of AA7075 induced by Aspergillus terreus(A.terreus)was deeply studied using analysis of biological activity,surface analysis,and electrochemical measurements.Results demonstrated that the planktonic and sessile spore concentrations decline by more than two orders of magnitude when UV radiation and BKC are combinedly used compared with the control.UV radiation can inhibit the biological activity of A.terreus and influence the stability of passive film of AA7075.Except for direct disinfection,the physical adsorption of BKC on the specimen can effectively inhibit the attachment of A.terreus.The combination of UV radiation and BKC can much more effectively inhibit the corrosion of AA,especially pitting corrosion,due to their synergistic effect.The combined application of UV radiation and BKC can be a good method to effectively inhibit fungal-induced corrosion.

Nitric oxide removal from flue gas coupled with the Fe^(Ⅱ)EDTA regeneration by ultraviolet irradiation

During wet complexation denitrification of flue gas,Fe^(Ⅱ)EDTA regeneration,also known as reducing Fe^(Ⅱ)EDTA and Fe^(Ⅱ)EDTA-nitric oxide(NO)to Fe^(Ⅱ)EDTA,is crucial.In this paper,ultraviolet(UV)light was used for the first time to reduce Fe^(Ⅱ)EDTA-NO.The experimental result demonstrated that Fe^(Ⅱ)EDTA-NO reduction rate increased with UV power increasing,elevated temperature,and initial Fe^(Ⅱ)EDTA-NO concentration decreasing.Fe^(Ⅱ)EDTA-NO reduction rate increased first and then decreased as pH value increased(2.0-10.0).Fe^(Ⅱ)EDTA-NO reduction with UV irradiation presented a first order reaction with respect to Fe^(Ⅱ)EDTA-NO.Compared with other Fe^(Ⅱ)EDTA regeneration methods,Fe^(Ⅱ)EDTA regeneration with UV show more superiority through comprehensive consideration of regeneration rate and procedure.Subsequently,NO absorption experiment by Fe^(Ⅱ)EDTA solution with UV irradiation confirmed that UV can significantly promote the NO removal performance of Fe^(Ⅱ)EDTA.Appropriate oxygen concentration(3%(vol))and acidic environment(pH=4)was favorable for NO removal.With UV power increasing as well as temperature decreasing,NO removal efficiency rose.In addition,the mechanism research indicates that NO from flue gas is mostly converted to NO_(2)-,NO_(3)-,NH_(4)^(+),N_(2),and N_(2)O with Fe^(Ⅱ)EDTA absorption liquid with UV irradiation.UV strengthens NO removal in Fe^(Ⅱ)EDTA absorption liquid by forming a synergistic effect of oxidation-reduction-complexation.Finally,compared with NO removal methods with Fe^(Ⅱ)EDTA,Fe^(Ⅱ)EDTA combined UV system shows prominent technology advantage in terms of economy and secondary pollution.

Optimization of extreme ultraviolet vortex beam based on high harmonic generation

In high harmonic generation(HHG),Laguerre–Gaussian(LG) beams are used to generate extreme ultraviolet(XUV)vortices with well-defined orbital angular momentum(OAM),which have potential applications in fields such as microscopy and spectroscopy.An experimental study on the HHG driven by vortex and Gaussian beams is conducted in this work.It is found that the intensity of vortex harmonics is positively correlated with the laser energy and gas pressure.The structure and intensity distribution of the vortex harmonics exhibit significant dependence on the relative position between the gas jet and the laser focus.The ring-like structures observed in the vortex harmonics,and the interference of quantum paths provide an explanation for the distinct structural characteristics.Moreover,by adjusting the relative position between the jet and laser focus,it is possible to discern the contributions from different quantum paths.The optimization of the HH vortex field is applicable to the XUV,which opens up a new way for exploiting the potential in optical spin or manipulating electrons by using the photon with tunable orbital angular momentum.

Summary of a Life in Observational Ultraviolet/Optical Astronomy

I reminisce on my early life in Section 1;on my education in Sections 2 and 3;on the years at Princeton as a research astronomer in Section 4;on the years on the faculty at Chicago in Section 5;on research on Diffuse Interstellar Bands(DIBs) in Section 6;on construction of the 3.5 m telescope at Apache Point Observatory(APO)in Section 7;on work on the Sloan Digital Sky Survey(SDSS) in Section 8;on work in public education in Chicago in Section 9;and on my travels in Section 10. My main science research is of an observational nature,concerning Galactic and intergalactic interstellar gas. Highlights for me included my work on the orbiting telescope Copernicus, including the discovery of interstellar deuterium;early observations of absorption associated with fivetimes ionized oxygen;and discoveries concerning the phases of gas in the local interstellar medium, based on previously unobservable interstellar UV spectral lines. With other instruments and collaborations, I extended interstellar UV studies to the intergalactic cool gas using quasi-stellar object QSO absorption lines redshifted to the optical part of the spectrum;provided a better definition of the emission and morphological character of the source of absorption lines in QSO spectra;and pursued the identification of the unidentified DIBs. For several of these topics, extensive collaborations with many scientists were essential over many years. The conclusions developed slowly, as I moved from being a graduate student at Chicago, to a research scientist position at Princeton and then to a faculty position at Chicago. At each stage of life, I was exposed to new technologies adaptable to my science and to subsequent projects. From high school days, I encountered several management opportunities which were formative. I have been extremely fortunate both in scientific mentors I had and in experimental opportunities I encountered.