Effect of composition and structure on specific resistivity of SiC fibers

Four kinds of SiC fibers with different specific resistivities were prepared by the pyrolysis of cured polycarbosilane fiber. The results show that SiC fibers with different specific resistivities can be obtained by changing the curing and pyrolysis conditions. And the free carbon content and the ability to crystallize no longer affect the specific resistivities notably with the time when the fiber is covered with an excess carbon layer, and the fiber has a low specific resistivity. The excess carbon layer in the circular outer part is originated from the re-pyrolysis and deposition of hydrocarbon volatiles. The removal of the carbon by oxidative treatment may affect the surface property and also promote the magnitude of specific resistivity. The influence of the surface property on the specific resistivity can be considerable and should not be neglected.

A super-junction SOI-LDMOS with low resistance electron channel

A novel super-junction LDMOS with low resistance channel(LRC),named LRC-LDMOS based on the silicon-on-insulator(SOI)technology is proposed.The LRC is highly doped on the surface of the drift region,which can significantly reduce the specific on resistance(R^(on,sp))in forward conduction.The charge compensation between the LRC,N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance,which can completely deplete the whole drift,thus the breakdown voltage(BV)is enhanced in reverse blocking.The three-dimensional(3D)simulation results show that the BV and R^(on,sp)of the device can reach 253 V and 15.5 mΩ·cm^(2),respectively,and the Baliga's figure of merit(FOM=BV^(2)/R^(on,sp))of 4.1 MW/cm^(2)is achieved,breaking through the silicon limit.

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $／sim 5.65／times 10^{ - 5}$$／Omega ／cdot$cm$^{2}$ and show the transmittance of $／sim $98% at a wavelength of 440nm when annealed at 500／du. Blue light emitting diodes （LEDs） fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21V at an injection current of 20mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20mA in comparison with that of LEDs with conventional Ni/Au contacts

Oxidation and Electrical Properties of Cu-Mn_(3)O_(4)Composite Coating Obtained by Electrodeposition on SOFC Interconnects

Cu-Mn_(3)O_(4)composite coating was prepared on the SUS 430 ferritic stainless steel by electrodeposition and then exposed in air at 800℃corresponding to the cathode atmosphere of solid oxide fuel cell(SOFC).A dual-layer oxide structure mainly comprising an external layer of CuO followed by(Cu,Mn,Fe)_(3)O_(4)spinel and an internal layer of Cr-rich oxide was thermally developed on the coated steel.The scale area-specific resistances(ASRs)of the coated steels were lower than the scale ASR of the uncoated steel after identical thermal exposure.The external layer of CuO/(Cu,Mn,Fe)_(3)O_(4)spinel not only served as a barrier to reduce the growth rate of Cr-rich oxide internal layer and to suppress the outward diffusion of Cr,but also lowered the surface scale ASRs considerably.

Fabrication of n^+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide

Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.

A Study on Enhancement of Filtration Process with Filter Aids Diatomaceous Earth and Wood Pulp Cellulose

In this paper, a study to enhance the filtration for solid/liquid materials difficult to be filtered, such as highly viscous, highly compactible or gel like materials, is presented. Filter aids diatomaceous earth and wood pulp cellulose are used to enhance the filtration by improving filter cake structure and properties in the filtration of a biological health product and a highly viscous chemical fiber polymer melt product. The property of solid/liquidsystems, filtration at different flow rates, specitic cake resistance, cake wetness, filtration rate, filtrate turbidity for filter aid selection and evaluation, and operation optimization are investigated. The results are successfully applied to industrial process, .and can be used as a reference for similar filtration applications.

Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p^(+)-GaN contacting layers

Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting layers.The effects of surface chemical treatment and annealing temperature were ex-amined.The optimal annealing temperature was determined to be 550°C,above which the sheet resistance of the samples de-graded considerably,suggesting that undesirable alloying had occurred.Pd-containing metal showed~35%lower com-pared to that of single Ni.Very thin(2-3.5 nm thick)p-InGaN contacting layers grown on 20-25 nm thick p^(+)-GaN layers exhib-ited one to two orders of magnitude smaller values of compared to that of p^(+)-GaN without p-InGaN.The current density de-pendence of,which is indicative of nonlinearity in current-voltage relation,was also examined.The lowest achieved through this study was 4.9×10^(-5)Ω·cm^(2)@J=3.4 kA/cm^(2).

Equivalent Cake Filtration Model

Cake filtration has been widely used in many chemical processes with more non-Newtonian, highly viscous and compressible materials involved. Neither traditional nor modem filtration theory can be applied in practice ＂Equivalent cake filtration model＂ is a recently developed mathematical model to describe cake filtration for both Newtonian and non-Newtonian fluids, in either steady or unsteady filtration stages. This model has two strengths： （1） It can be used to determine equivalent capillary radii and predict filtration quality based on the properties of solid/liquid system and operation parameters; and （2） to calculate cake specific resistance and its variations with time at various cake thickness locations.

Ti-Al based ohmic contacts to n-type 6H-SiC with ion implantation

The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM （transfer length method） test patterns with Au/Ti/A1/Ti/SiC structure is formed on N-wells created by P^＋ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance pc as low as 8.64×10-6Ω·cm^2 is achieved after annealing in N2 at 900℃ for 5min. The sheet resistance Rsh of the implanted layers is 975Ω. X-ray diffraction （XRD） analysis shows the formation of Ti3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.

A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands

A novel planar vertical double-diffused metal-oxide-semiconductor （VDMOS） structure with an ultra-low specific on-resistance （Ron,sp）, whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its Ron,sp is deduced, the influence of structure parameters on the breakdown voltage （BV） and Ron,sp are investigated, and the optimized results with BV of 83 V and Ron,sp of 54 mΩ.mm2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor （MOSFET） has a superior ＂Ron,sp/BV＂ trade-off to the conventional VDMOS （a 38% reduction of Ron,sp with the same BV） and the homogeneous-floating-islands MOSFET （a 10% reduction of Ron,sp with the same BV）. The inhomogeneous-floatingislands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively.

Transparent conducting indium-tin-oxide(ITO) film as full front electrode in Ⅲ–Ⅴ compound solar cell

The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.

Theoretical Study and Analysis on Properties of Filter Aids

Pressure filtration and filter aids should be adopted in filtration of high-viscosity molten chemical fiber containing foreign materials and gel particles. Theoretical analysis and argumentations on manners of assisted filtration and specific requirements of filter aids are performed. Measurement and comparison on properties of several filter aids are also carried out, conclusions and suggestions are put forward.

Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C–SiC

The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. A1 contacts with differ- ent thickness values are deposited on the 3C-SiC/Si （100） structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and mi- crostructure of A1/3C-SiC structure. The electrical properties of A1 contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of A1 contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the A1 contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 ℃, and they become Schottky contacts when the annealing tem- perature is above 650 ℃. A minimum specific contact resistance of 1.8 × 10-4 Ω cm2 is obtained when the A1 contact is annealed at 250 ℃.

Physical Modelling of the Drained Flow on a Suction Box of a Papermachine

Suction boxes are used in the paper industry to simultaneously drain a pulp suspension and form a fibre mat （or filter cake）. This research addresses the modelling of fibre deposition in the forming unit of an industrial papermachine, assuming a filtration process, and that of the flowing suspension drained through the building fibre mat and the wire on a suction box. From experimental data of the cumulative drained V volume, per unit surface area, for two vacuum pressures △P and 6 dwell times t, an extension of the classical law （t/V） versus V is proposed, validated and applied. This relation enables determining the average specific filtration resistance of the fibre mat over the box and the mass of solids deposited before and over the suction box. The model obtained is as precise as 1% and can be used to limit and reduce the energy consumption of drainage vacuum assisted devices such as suction boxes in the forming unit of industrial papermachines.

The Research of Spin-Orbital Interaction in Intermetallic Compounds of System Gd-In on Paramagnetic Area

Normal,R0,and anomalous,RS,components of the Hall coefficient are determined from the results of experimental investigations of temperature dependences of the Hall coefficient,magnetic susceptibility,and specific electrical resistance for intermetallic Gd3In,Gd3In5 and GdIn3 compounds.Effective parameters of spin-orbital interactionλSO of intermetallic compounds are calculated from anomalous components RS of the Hall coefficient and specific electrical resistance.The results calculated for the band parameters and effective parameters of spin-orbital interactionλSO for Gd-In system intermetallides coincide by orders of magnitude with the results obtained from the optical spectra of pure REMs(rare-earth metals).

A Review on Progressive Collapse Designing Based on UFC Regulation

Progressive collapse is a relatively rare event which happens due to unusual loading on a structure that lacks adequate continuity,ductility and indeterminacy which causes local collapse in that structure and then extends it to other structural parts.The US department of defense published UFC4-023-03 regulation regarding the building design against progressive collapse.This regulation,based on the ASCE 7-05 standard,introduces two general approaches to building design against progressive collapse,including direct design and indirect design approaches.In this study,a variety of structural design methods for progressive collapse have been investigated.Moreover,their strengths and weaknesses have been mentioned.In general,the results of this study show that design based on alternative path(AP)method is more economical than other methods.Moreover,application of AP method is much more commonly accepted by researchers and designers.

Applying the Protective Mn-Co-La_(2)O_(3)Coating on Crofer 22 APU Ferritic Stainless Steel Used as Solid Oxide Fuel Cell Interconnects

This research studies the effect of Mn-Co-La_(2)O_(3) coating synthesized by the electrodeposition method on the oxidation resistance and electrical conductivity of the Crofer 22 APU stainless steel interconnect plates in solid oxide fuel cells.The test samples were characterized by a field emission scanning electron microscope(FESEM)equipped with energy dispersive spectroscopy(EDS),X-ray diffraction(XRD),and X-ray photoelectron spectroscopy(XPS).The oxidation kinetics of the coated and uncoated samples were studied by tracking their weight changes over time at 800°C,showing that the oxidation mechanism for all samples follows the parabolic law.Lower oxidation rate constant(k_(p))values of the coated sample compared with that of the uncoated one indicated a reduction in the oxidation rate of the steel substrate in the presence of the Mn-Co-La_(2)O_(3) coating.The examination of the cross-section of different samples after the isothermal oxidation for 500 h at 800°C exhibited that applying the composite coating leads to a decrease in the thickness of the chromia layer formed on the steel surface.Furthermore,under these conditions,the area-specific resistance(ASR)of the coated sample(13.11 mΩcm^(2))is significantly lower than that of the uncoated one(41.45 mΩcm^(2)).

Long short-term memory deep learning model for predicting the dynamic performance of automotive PEMFC system

As a high efficiency hydrogen-to-power device,proton exchange membrane fuel cell(PEMFC)attracts much attention,especially for the automotive applications.Real-time prediction of output voltage and area specific resistance(ASR)via the on-board model is critical to monitor the health state of the automotive PEMFC stack.In this study,we use a transient PEMFC system model for dynamic process simulation of PEMFC to generate the dataset,and a long short-term memory(LSTM)deep learning model is developed to predict the dynamic per-formance of PEMFC.The results show that the developed LSTM deep learning model has much better perfor-mance than other models.A sensitivity analysis on the input features is performed,and three insensitive features are removed,that could slightly improve the prediction accuracy and significantly reduce the data volume.The neural structure,sequence duration,and sampling frequency are optimized.We find that the optimal sequence data duration for predicting ASR is 5 s or 20 s,and that for predicting output voltage is 40 s.The sampling frequency can be reduced from 10 Hz to 0.5 Hz and 0.25 Hz,which slightly affects the prediction accuracy,but obviously reduces the data volume and computation amount.

Ohmic Contact Property of Ti/Al/Ni/Au on AlGaN/GaN Heterostructures for Application in Ultraviolet Detectors

Ohmic contacts of Ti/Al/Ni/Au multi-layer metal on A10.27 Ga0.73N/GaN heterostructures were fabricated. Specific contact resistivities were measured by the linear transmission line method （LTLM） and the circular transmission line method （CTLM） ,respectively. A minimum specific contact resistivity of 1.46× 10 ^-5Ω· cm^2z was obtained by evaporating a Ti（10nm）/Al（100nm）/Ni（40nm）/Au（100nm） multi-layer and annealing for 30s at 650℃ in ultra-high purity N2 ambient. A10.27 Ga0.73 N/GaN photoconductor ultraviolet （UV） photodetectors were prepared. The dark current-voltage （I-V） characteristics of the detectors were measured and the result shows that the I- V curve was linear. Experimental results indicate that good ohmic contact on the Al0.27 Ga0.73 N/GaN heterostructure is obtained and it can be applied in high- performance AlGaN/GaN UV photodetector fabrications.

Numerical and experimental study on sound absorption by pseudostochastic diffusors

Based on theory proposed in the preceding paper [3]. the numerical calculation and eVerimental study of sound absorption by pseudostochastic diffusors are carried out in this paper. Average specific acoustic impedance of the whole structure is obtained. The nonlinear coupling specific resistance is emphatically analysed. The experiments of measuring normal absorption coefficient of the structure are made. The tested results agree with predicated data.