A spherical Si solar cell with a reflector cup was successfully fabricated by a dropping method at decompression state. In the dropping method, melted Si droplets were instilled at decompression state (0.5×105 Pa...A spherical Si solar cell with a reflector cup was successfully fabricated by a dropping method at decompression state. In the dropping method, melted Si droplets were instilled at decompression state (0.5×105 Pa) to reduce crystal growth rate, dominating crystal quality such as dislocation density in crystal grains. Spherical Si solar cells were fabricated using the spherical Si crystals with a diameter of 1 mm and then mounted on a reflector cup. The current-voltage measurement of the solar cell shows an energy conversion efficiency of 11.1% (short-circuit current density (Jsc): 24.7 mA·cm-2, open-circuit voltage: 601 mV, fill factor: 74.6%). Minority carrier diffusion length determined by surface photovoltage method was 98 μm. This value can be enhanced by the improvement of crystal quality of spherical Si crystals. These results demonstrate that spherical Si crystals fabricated by the dropping method has a great potential for substrate material of high-efficiency and low-cost solar cells.展开更多
In this article,we present a theoretical study on the sub-bandgap refractive indexes and optical properties of Sidopedβ-Ga_(2)O_(3) thin films based on newly developed models.The measured sub-bandgap refractive index...In this article,we present a theoretical study on the sub-bandgap refractive indexes and optical properties of Sidopedβ-Ga_(2)O_(3) thin films based on newly developed models.The measured sub-bandgap refractive indexes ofβ-Ga_(2)O_(3) thin film are explained well with the new model,leading to the determination of an explicit analytical dispersion of refractive indexes for photon energy below an effective optical bandgap energy of 4.952 eV for theβ-Ga_(2)O_(3) thin film.Then,the oscillatory structures in long wavelength regions in experimental transmission spectra of Si-dopedβ-Ga_(2)O_(3) thin films with different Si doping concentrations are quantitively interpreted utilizing the determined sub-bandgap refractive index dispersion.Meanwhile,effective optical bandgap values of Si-dopedβ-Ga_(2)O_(3) thin films are further determined and are found to decrease with increasing the Si doping concentration as expectedly.In addition,the sub-bandgap absorption coefficients of Si-dopedβ-Ga_(2)O_(3) thin film are calculated under the frame of the Franz–Keldysh mechanism due to the electric field effect of ionized Si impurities.The theoretical absorption coefficients agree with the available experimental data.These key parameters obtained in the present study may enrich the present understanding of the sub-bandgap refractive indexes and optical properties of impurity-dopedβ-Ga_(2)O_(3) thin films.展开更多
The growth of wind energy penetration level in distribution system raises the concern about its impact on the operation of the power system, especially voltage stability and power loss. Among the major concerns, this ...The growth of wind energy penetration level in distribution system raises the concern about its impact on the operation of the power system, especially voltage stability and power loss. Among the major concerns, this paper studied the impact of connecting wind Turbine (WT) in radial distribution system with different penetration levels and different power factor (lead and lag) on power system voltage stability and power loss reduction. Load flow calculation was carried out using forward-backward sweep method. The analysis proceeds on 9- and 33-bus radial distribution systems. Results show that voltage stability enhancement and power loss reduction should be considered as WT installation objective.展开更多
基金This work was partly financially supported by NEDO.
文摘A spherical Si solar cell with a reflector cup was successfully fabricated by a dropping method at decompression state. In the dropping method, melted Si droplets were instilled at decompression state (0.5×105 Pa) to reduce crystal growth rate, dominating crystal quality such as dislocation density in crystal grains. Spherical Si solar cells were fabricated using the spherical Si crystals with a diameter of 1 mm and then mounted on a reflector cup. The current-voltage measurement of the solar cell shows an energy conversion efficiency of 11.1% (short-circuit current density (Jsc): 24.7 mA·cm-2, open-circuit voltage: 601 mV, fill factor: 74.6%). Minority carrier diffusion length determined by surface photovoltage method was 98 μm. This value can be enhanced by the improvement of crystal quality of spherical Si crystals. These results demonstrate that spherical Si crystals fabricated by the dropping method has a great potential for substrate material of high-efficiency and low-cost solar cells.
基金This study was financially supported by the National Natural Science Foundation of China(No.12074324)the Shenzhen Municipal Science and Technology Innovation Council(No.JCJY20180508163404043).
文摘In this article,we present a theoretical study on the sub-bandgap refractive indexes and optical properties of Sidopedβ-Ga_(2)O_(3) thin films based on newly developed models.The measured sub-bandgap refractive indexes ofβ-Ga_(2)O_(3) thin film are explained well with the new model,leading to the determination of an explicit analytical dispersion of refractive indexes for photon energy below an effective optical bandgap energy of 4.952 eV for theβ-Ga_(2)O_(3) thin film.Then,the oscillatory structures in long wavelength regions in experimental transmission spectra of Si-dopedβ-Ga_(2)O_(3) thin films with different Si doping concentrations are quantitively interpreted utilizing the determined sub-bandgap refractive index dispersion.Meanwhile,effective optical bandgap values of Si-dopedβ-Ga_(2)O_(3) thin films are further determined and are found to decrease with increasing the Si doping concentration as expectedly.In addition,the sub-bandgap absorption coefficients of Si-dopedβ-Ga_(2)O_(3) thin film are calculated under the frame of the Franz–Keldysh mechanism due to the electric field effect of ionized Si impurities.The theoretical absorption coefficients agree with the available experimental data.These key parameters obtained in the present study may enrich the present understanding of the sub-bandgap refractive indexes and optical properties of impurity-dopedβ-Ga_(2)O_(3) thin films.
文摘The growth of wind energy penetration level in distribution system raises the concern about its impact on the operation of the power system, especially voltage stability and power loss. Among the major concerns, this paper studied the impact of connecting wind Turbine (WT) in radial distribution system with different penetration levels and different power factor (lead and lag) on power system voltage stability and power loss reduction. Load flow calculation was carried out using forward-backward sweep method. The analysis proceeds on 9- and 33-bus radial distribution systems. Results show that voltage stability enhancement and power loss reduction should be considered as WT installation objective.
