A new hybrid organic-inorganic structure of FTO/TiO2/Se/HTL/Au based selenium solar cell has been fabricated through a low-cost spin-coating process in air. In this process, selenium is completely dissolved in hydrazi...A new hybrid organic-inorganic structure of FTO/TiO2/Se/HTL/Au based selenium solar cell has been fabricated through a low-cost spin-coating process in air. In this process, selenium is completely dissolved in hydrazine, to fk)rm a homogeneous precursor solution. After spin-coating the precursor solution on the TiO2 substrates, following by sintering at 200 ℃ for 5rain, a uniform selenium film with crystalline grains is formed. The selenium based solar cell exhibits an efficiency of 1.23% under AM1.5 illumination (100 mW.cm-2), short-circuit current density of 8 mA.cm 2, open-circuit voltage of 0.55 V, and fill factor of 0.37. Moreover, the device shows a stable ability with almost the same performance alter 60 days.展开更多
Transparent zinc oxide(ZnO) thin films are fabricated by a simple sol-gel spin-coating technique on glass substrates with different solution concentrations(0.3-1.2 M) using zinc acetate dehydrate [Zn(CH_3COO)_2&...Transparent zinc oxide(ZnO) thin films are fabricated by a simple sol-gel spin-coating technique on glass substrates with different solution concentrations(0.3-1.2 M) using zinc acetate dehydrate [Zn(CH_3COO)_2·2H_2O] as precursor and isopropanol and monoethanolamine(MEA) as solvent and stabilizer, respectively. The molar ratio of zinc acetate dehydrate to MEA is 1.0. X-ray diffraction, ultraviolet-visible spectroscopy and photoluminescence spectroscopy are employed to investigate the effect of solution concentration on the structural and optical properties of the ZnO thin films. The obtained results of all thin films are discussed in detail and are compared with other experimental data.展开更多
This paper is concerned with the improvement of dye-sensitized solar cell (DSSC) efficiency upon ZnO-coating of the TiO2 electrode. Sol-gel ZnO of controlled amount by varying the number of sol drops during spin-coati...This paper is concerned with the improvement of dye-sensitized solar cell (DSSC) efficiency upon ZnO-coating of the TiO2 electrode. Sol-gel ZnO of controlled amount by varying the number of sol drops during spin-coating is shown to increase the DSSC efficiency. The highest efficiency is obtained at a single sol drop with enhancement of 40%, while beyond this amount the efficiency falls down sharply to zero. Based on measured optical absorption spectra of the different dye-loaded electrodes, it is concluded that this amount of ZnO sol corresponds to the thinnest layer that can create the energy barrier to minimize the electron recombination rate without seriously affecting the dye adsorption efficiency of the TiO2 film.展开更多
Dye-sensitized solar cells (DSSCs) with ZnO spin-coated TiO2 photo-electrodes are compared to DSSC with a bare TiO2 photo-electrode. It is demonstrated that the deposited ZnO of controlled amount, by varying the precu...Dye-sensitized solar cells (DSSCs) with ZnO spin-coated TiO2 photo-electrodes are compared to DSSC with a bare TiO2 photo-electrode. It is demonstrated that the deposited ZnO of controlled amount, by varying the precursor concentration in the coating sol, can indeed enhance the performance of the DSSC. The measured power conversion efficiency shows a maximum around the precursor concentration 0.1 M and falls down sharply to 0% beyond this point. The results are interpreted on the basis of two competing factors: At ZnO concentrations less than 0.1 M, the formation of an energy barrier increases the photocurrent by reducing the rate of interfacial back-recombination. At ZnO concentrations greater than 0.1 M, the screening of the TiO2 film by thicker ZnO layers decreases the photocurrent through the reduction of TiO2 dye-adsorption efficiency.展开更多
In this work,we propose a new spin-coating method coupling with high thermal decomposition,to prepare the tin-antimony(Sn-Sb) oxide electrode.The character of the spin-coating electrode was compared with the dip-coa...In this work,we propose a new spin-coating method coupling with high thermal decomposition,to prepare the tin-antimony(Sn-Sb) oxide electrode.The character of the spin-coating electrode was compared with the dip-coating electrode through X-ray diffraction(XRD),scanning electron microscopy(SEM),accelerated life test,cyclic voltammetry,and electrolytic degradability. The results showed that the spin-coating electrode had a better defined crystal form,a smoother and more compact surface than that of the dip-coating electrode.Service time of the spin-coating electrode was determined to be longer than 15 h,and it was less than 2 min for the dip-coating electrode.Electrochemical characterization analysis showed that the electrolytic degradability of the spin-coating electrode is better than that of the dip-coating electrode.展开更多
A novel two-step method is employed, for the first time, to fabricatc nonvolatile memory devices that have metal nanoerystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assemble...A novel two-step method is employed, for the first time, to fabricatc nonvolatile memory devices that have metal nanoerystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concem for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method.展开更多
An antireflection (AR) coating is fabricated by applying an optimal spin-coating method and a pH-modified SiO2 nanoparticle solution on a cover glass. Because the pH value of the solution will affect the aggregation...An antireflection (AR) coating is fabricated by applying an optimal spin-coating method and a pH-modified SiO2 nanoparticle solution on a cover glass. Because the pH value of the solution will affect the aggregation and dispersion of the SiO2 particles, the transmittance of the AR-treated cover glass will be enhanced under optimal fabricated conditions. The experimental results show that an AR coating fabricated by an SiO2 nano- particle solution of pH 11 enhances the transmittance approximately by 3% and 5% under normal and oblique incident conditions, respectively. Furthermore, the AR-treated cover glass exhibits hydrophobicity and shows a 65% enhancement at a contact angle to bare glass.展开更多
The lanthanum(Ⅲ) complex [Li(thf)3(μ-CI)La{N(SiMe3)2}3](3) was obtained by the reaction of LaCl3 with three equiv of Li[N(SiMe3)2]3 in a tetrahydrofuran solution. The molecular structure of 3 in the soli...The lanthanum(Ⅲ) complex [Li(thf)3(μ-CI)La{N(SiMe3)2}3](3) was obtained by the reaction of LaCl3 with three equiv of Li[N(SiMe3)2]3 in a tetrahydrofuran solution. The molecular structure of 3 in the solid state was characterized by a tetracoordinated anionic lanthanide(Ⅲ) amide in form of an adduct with LiCl(thf)3 as evidenced by single crystal X-ray structure analysis. In order to study the suitability of 3 as a precursor for the deposition of La2O3/LiLaSiO4 by thin layer deposition techniques,its thermal behavior was investigated by thermogravimetry(TG) and TG-MS-coupled studies. TG studies show a two-step decomposition process, whereby volatile decomposition products can be detected during the second decomposition step. TG measurements under an atmosphere of oxygen produced La2O3, Calcination processes of 3 under ambient atmosphere for 10 h at 1000 ℃ gave La2O3 and LiLaSiO4,which was confirmed by PXRD studies. Metal-organic 3 was applied as spin-coating precursor for La2O3 thin film formation giving the as-deposited layers nearly crack-free.展开更多
The synthesis,structure and thermal behavior of [Y(dbm)3(H2 O)](3)(dbm = 1,3-diphenyl-1,3-propandionate) and its use as a spin-coating precursor for Y2 O3 deposition is reported. Complex 3 was prepared by the ...The synthesis,structure and thermal behavior of [Y(dbm)3(H2 O)](3)(dbm = 1,3-diphenyl-1,3-propandionate) and its use as a spin-coating precursor for Y2 O3 deposition is reported. Complex 3 was prepared by the reaction of [Y(NO3)3·6 H2 O](1) with 3 equiv of Hdbm(2) in presence of NaOH. The molecular structure of 3 in the solid-state was determined by single X-ray crystal diffraction. Both C1 symmetric crystallographically independent species of 3 possess a YO7 coordination setup with minor deviation from an ideal capped octahedron coordination geometry(∧ enantiomer). Complex 3 forms a1 D chain, due to intermolecular hydrogen bonds between the coordinated H2 O molecule and the 0 atom of the dbm ligand, respectively. The thermal decomposition behavior of 3 was investigated by thermogravimetric studies in the temperature range of 40-800 ℃ and 40-1300 ℃ under an oxygen and argon atmosphere, respectively. Powder X-ray diffraction(PXRD) measurements of the residues confirmed the formation of Y2 O3. Complex 3 was applied as a spin-coating precursor for yttrium oxide film formation on either Si wafers with a continuous 100 nm thick SiO2 film, or with a native oxide layer.The as-deposited Y2 O3 layers are smooth, conformal, dense and transparent and are of a thickness of 27 and 30 nm, respectively.展开更多
Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for appli...Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for applications in diverse fields including(opto)electronics,electrocatalysis,and energy storage.Chemical vapor deposition(CVD)is one of the most compelling growth methods for the scalable growth of high-quality 2D TMDs.However,the conventional CVD process for synthesis of 2D TMDs still encounters significant challenges,primarily attributed to the high melting point of precursor powders,and achieving a uniform distribution of precursor atmosphere on the substrate to obtain controllable smaple domains is difficult.The spin-coating precursor mediated chemical vapor deposition(SCVD)strategy provides refinement over traditional methods by eliminating the use of solid precursors and ensuring a more clean and uniform distribution of the growth material on the substrate.Additionally,the SCVD process allows fine-tuning of material thickness and purity by manipulating solution composition,concentration,and the spin coating process.This Review presents a comprehensive summary of recent advances in controllable growth of 2D TMDs with a SCVD strategy.First,a series of various liquid precursors,additives,source supply methods,and substrate engineering strategies for preparing atomically thin TMDs by SCVD are introduced.Then,2D TMDs heterostructures and novel doped TMDs fabricated through the SCVD method are discussed.Finally,the current challenges and perspectives to synthesize 2D TMDs using SCVD are discussed.展开更多
In the process of fabrication of polymer photovoltaic (PV) devices, poly (3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) thin film, acting as an anode buffer layer, is spin-coated under the...In the process of fabrication of polymer photovoltaic (PV) devices, poly (3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) thin film, acting as an anode buffer layer, is spin-coated under the action of an electric field. The PV devices with a PEDOT:PSS layer spin-coated under the action of a static electric field exhibit improved short-circuit current density (Jsc) and power conversion efficiency (PCE). The investigation of morphology shows that the appropriate intensity of the electric field can increase the roughness of the surface of the PEDOT:PSS layer, which results in improved contact between the anode and hole transport layer and thus enhances the Jsc of the devices. Chemical analysis is also provided by x-ray photoelectron spectroscopy (XPS) spectra.展开更多
In CZTSSe solar cells,a simple sodium-incorporation post-treatment method toward solution-processed Cu2Zn Sn S4precursor films is presented in this work.An ultrathin NaCl film is deposited on Cu2Zn Sn S4precursor film...In CZTSSe solar cells,a simple sodium-incorporation post-treatment method toward solution-processed Cu2Zn Sn S4precursor films is presented in this work.An ultrathin NaCl film is deposited on Cu2Zn Sn S4precursor films by spin-coating NaCl solution.In subsequent selenization process,the introduction of Na Cl is found to be benefacial for the formation of Cu2-xSe,which can further facilitate the element transportation,leading to dense and smooth CZTSSe films with large grains and less impurity Cu2Sn(S,Se)3phase.SIMS depth profiles confirm the gradient distribution of the sodium element in Na-doped absorbers.Photoluminescence spectra show that the introduction of appropriate sodium into the absorber can inhibit the band tail states.As high as 11.18% of power conversion efficiency(PCE)is achieved for the device treated with 5 mg mL^-1 NaCl solution,and an average efficiency of Na-doped devices is 10.71%,13%higher than that of the control groups(9.45%).Besides,the depletion width and the charge recombination lifetime can also have regular variation with sodium treatment.This work offers an easy modification method for high-quality Na-doped CZTSSe films and high-performance devices,in the meantime,it can also help to further understand the effects of sodium in CZTSSe solar cells.展开更多
A solvent-assisted methodology has been developed to synthesize CH_3NH_3 PbI_3perovskite absorber layers.It involved the use of a mixed solvent of CH_3NH_3 I,PbI_2,c-butyrolactone,and dimethyl sulfoxide(DMSO) followed...A solvent-assisted methodology has been developed to synthesize CH_3NH_3 PbI_3perovskite absorber layers.It involved the use of a mixed solvent of CH_3NH_3 I,PbI_2,c-butyrolactone,and dimethyl sulfoxide(DMSO) followed by the addition of chlorobenzene(CB).The method produced ultra-flat and dense perovskite capping layers atop mesoporous TiO_2 films,enabling a remarkable improvement in the performance of free hole transport material(HTM) carbon electrode-based perovskite solar cells(PSCs).Toluene(TO) was also studied as an additional solvent for comparison.At the annealing temperature of 100 °C,the fabricated HTM-free PSCs based on drop-casting CB demonstrated power conversion efficiency(PCE) of 9.73 %,which is 36 and 71 % higher than those fabricated from the perovskite films using TO or without adding an extra solvent,respectively.The interaction between the PbI_2–DMSO–CH_3NH_3I intermediate phase and the additional solvent was discussed.Furthermore,the influence of the annealing temperature on the absorber film formation,morphology,and crystalline structure was investigated and correlated with the photovoltaic performance.Highly efficient,simple,and stable HTM-free solar cells with a PCE of 11.44 % were prepared utilizing the optimum perovskite absorbers annealed at 120 °C.展开更多
The composite films constituted of hydroxyapatite (HAP) submicron particles embedded in the gel composed of the titania nanoparticles were prepared on commercial Ti6Al4V plates with titania buffer layer obtained by a ...The composite films constituted of hydroxyapatite (HAP) submicron particles embedded in the gel composed of the titania nanoparticles were prepared on commercial Ti6Al4V plates with titania buffer layer obtained by a spin-coating technique. The films were annealed in air at 450 ℃, 550 ℃ and 650 ℃, respectively. The phase formation, surface morphology, andinterfacial microstructure of the films were investigated by X-ray diffraction(XRD),Fourier transform infrared spectroscopy (FT-IR), field emission-scanning electron microscopy(FE-SEM) and energy dispersive X-ray (EDS) analysis. The results show that the as-prepared films are all well-crystallized, dense,homogeneous, and there was a close interfacial bond between the film and the substrate. The results of adhesion test indicate that there is a good bonding strength between the film and the substrate. The bone-like apatite formation on the surface of the films after immersion in acellular simulatedbody fluid(SBF) validated their bioactivities.展开更多
ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-r...ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al distortion, and the biaxial stresses are 1.03× 10^8. 3.26× 10^8 and Sb are of wurtzite hexagonal ZnO with a very small 5.23 × 10^8, and 6.97× 10^8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5 Ω·cm.展开更多
Scintillation light from a liquid noble gas during a neutrino or dark matter experiment lies typically within the vacuum ultraviolet region and might be strongly absorbed by surrounding materials such as light guides ...Scintillation light from a liquid noble gas during a neutrino or dark matter experiment lies typically within the vacuum ultraviolet region and might be strongly absorbed by surrounding materials such as light guides or photomultipliers.Tetraphenyl butadiene(TPB)is a fluorescent material,acts as a wavelength shifter,and can turn UV light into visible light at a peak wavelength of approximately 425 nm,enabling the light signals to be easily detected during physics studies.Compared with a traditional TPB coating method using vapor deposition,we propose an alternative technique applying a spin-coating procedure to facilitate the development of neutrino and dark matter detectors.This article introduces a method to fabricate a TPB film on an acrylic substrate by using a spincoating method,reports the measurements of the sample film thickness and roughness,demonstrates the reemission spectrum,and quantifies the wavelength shifting efficiency.展开更多
In this study,tin oxide sensing membrane was derived by sol-gel method and was coated onto indium tin oxide (ITO) glass substrate by spin-coating technique to fabricate a pH sensing electrode.Besides,the morphology o...In this study,tin oxide sensing membrane was derived by sol-gel method and was coated onto indium tin oxide (ITO) glass substrate by spin-coating technique to fabricate a pH sensing electrode.Besides,the morphology of the tin oxide membrane has been discussed through the instrumental analysis.Furthermore,the sensing characteristics of the pH electrode was measured by commercial instrumental amplifier as the readout circuit.Owing to the sol-gel method has many advantages such as easy fabrication of gel solution,ability to dope other materials without any expensive fabricating equipment.Hence,it is suitable for the mass production of a disposable sensor.展开更多
This work presents the synthesis of a new hole-buffering material TAZS and its successful application in polymer light-emitting diodes to enhance device performance. The TAZS is composed of aromatic 1,2,4-triazolylcor...This work presents the synthesis of a new hole-buffering material TAZS and its successful application in polymer light-emitting diodes to enhance device performance. The TAZS is composed of aromatic 1,2,4-triazolylcore linked with three trihydroxy tert-butyl terminals via azomethine linkages. The TAZS forms ashomogeneous film deposited by spin-coating process. The HOMO and LUMO levels of TAZS are -5.23 eV and -2.40 eV, respectively, as estimated from cyclic voltammogram. The current density results of hole-only and electron-only devices confirm strong hole-buffering capability of TAZS layer. Multilayer PLEDs with different thickness of TAZS (ITO/PEDOT: PSS/TAZS (x nm)/SY/ETL/LiF/Al) have been successfully fabricated, using spin-coating process to deposit hole-injecting PEDOT: PSS, TAZS, and emissive SY layers. The PLED with 16 nm TAZS reveals the optimal device performance, with maximum luminance and maximum current efficiency of 19,046 cd/m2 and 4.08 cd/A, respectively, surpassing those without TAZS as HBL (8484 cd/m2, 2.13 cd/A). The hole-buffering characteristic of TAZS contributes greatly to improved charges’ recombination ratio and enhanced emission efficiency.展开更多
Inserting a hole-buffer layer is an effective way to enhance emission efficiency of electroluminescence devices. We have successfully synthesized a new hole-buffer material PSB composed of pyrene, Schiff base and trih...Inserting a hole-buffer layer is an effective way to enhance emission efficiency of electroluminescence devices. We have successfully synthesized a new hole-buffer material PSB composed of pyrene, Schiff base and trihydroxy tert-butyl groups by the Suzuki-coupling reaction. The HOMO and LUMO lev-els were -6.33 eV and -2.55 eV, respectively, as estimated from cyclic volt-ammograms. In addition, homogeneous films (rms roughness ~2 nm) were readily obtained by spin-coating process. Multilayer polymer light-emitting diodes, ITO/PEDOT:PSS/PSB/SY/LiF/Al, have been fabricated using PSB as hole-buffer layer (HBL). Inserting PSB as HBL significantly enhances the per-formance (maximum luminance: 26,439 cd/m2, maximum current efficiency: 7.03 cd/A), compared with the one without PSB (9802 cd/m2, 2.43 cd/A). It is also superior to the device with conventional BCP as hole-blocking layer (ITO/PEDOT:PSS/SY/BCP/LiF/Al: 15,496 cd/m2, 5.56 cd/A). Current results strongly indicate that the PSB is a potential hole-buffer material for electrolu-minescent devices.展开更多
We introduce a direct method for transferring arrays of GaAs microtubes from an opaque substrate to a transparent glass substrate in a controlled manner. This enables us to build a platform for optical readout of the ...We introduce a direct method for transferring arrays of GaAs microtubes from an opaque substrate to a transparent glass substrate in a controlled manner. This enables us to build a platform for optical readout of the microtubes’ interaction with overgrown cellular networks. We achieve this by applying a double layer of polydimethylsiloxane (PDMS). The first PDMS layer serves as a smooth and mechanically compliant transparent substrate. The second, adhesive layer contains a mixture of PDMS and n-hexane, which creates a layer thickness smaller than the tube diameter. This will prevent the tubes from sinking into the substrate. The microtubes themselves are made of GaAs heterostructures. The direct bandgap of the material allows for the integration of embedded optical device components into the tube wall. The microtubes have diameters on the same scale as typical mouse cortical axons, being on average 1 μm. The axons can be grown through the tubes, hence maximally enhancing the capacitive coupling of the signal source (axon) and the electrode (tube). Although the tube material is toxic to cells, we are able to overcome this by a parylene-coating step.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51579057,5177090655,and 51379052)the State Key Laboratory of Urban Water Resource and Environment,Harbin Institute of Technology,China(Grant No.2016DX07)
文摘A new hybrid organic-inorganic structure of FTO/TiO2/Se/HTL/Au based selenium solar cell has been fabricated through a low-cost spin-coating process in air. In this process, selenium is completely dissolved in hydrazine, to fk)rm a homogeneous precursor solution. After spin-coating the precursor solution on the TiO2 substrates, following by sintering at 200 ℃ for 5rain, a uniform selenium film with crystalline grains is formed. The selenium based solar cell exhibits an efficiency of 1.23% under AM1.5 illumination (100 mW.cm-2), short-circuit current density of 8 mA.cm 2, open-circuit voltage of 0.55 V, and fill factor of 0.37. Moreover, the device shows a stable ability with almost the same performance alter 60 days.
文摘Transparent zinc oxide(ZnO) thin films are fabricated by a simple sol-gel spin-coating technique on glass substrates with different solution concentrations(0.3-1.2 M) using zinc acetate dehydrate [Zn(CH_3COO)_2·2H_2O] as precursor and isopropanol and monoethanolamine(MEA) as solvent and stabilizer, respectively. The molar ratio of zinc acetate dehydrate to MEA is 1.0. X-ray diffraction, ultraviolet-visible spectroscopy and photoluminescence spectroscopy are employed to investigate the effect of solution concentration on the structural and optical properties of the ZnO thin films. The obtained results of all thin films are discussed in detail and are compared with other experimental data.
文摘This paper is concerned with the improvement of dye-sensitized solar cell (DSSC) efficiency upon ZnO-coating of the TiO2 electrode. Sol-gel ZnO of controlled amount by varying the number of sol drops during spin-coating is shown to increase the DSSC efficiency. The highest efficiency is obtained at a single sol drop with enhancement of 40%, while beyond this amount the efficiency falls down sharply to zero. Based on measured optical absorption spectra of the different dye-loaded electrodes, it is concluded that this amount of ZnO sol corresponds to the thinnest layer that can create the energy barrier to minimize the electron recombination rate without seriously affecting the dye adsorption efficiency of the TiO2 film.
文摘Dye-sensitized solar cells (DSSCs) with ZnO spin-coated TiO2 photo-electrodes are compared to DSSC with a bare TiO2 photo-electrode. It is demonstrated that the deposited ZnO of controlled amount, by varying the precursor concentration in the coating sol, can indeed enhance the performance of the DSSC. The measured power conversion efficiency shows a maximum around the precursor concentration 0.1 M and falls down sharply to 0% beyond this point. The results are interpreted on the basis of two competing factors: At ZnO concentrations less than 0.1 M, the formation of an energy barrier increases the photocurrent by reducing the rate of interfacial back-recombination. At ZnO concentrations greater than 0.1 M, the screening of the TiO2 film by thicker ZnO layers decreases the photocurrent through the reduction of TiO2 dye-adsorption efficiency.
基金the financial support from the Program for New Century Excellent Talents in University(NoNCET-07-0683)President Research Fund of Xi'an Jiaotong University(No08140016)
文摘In this work,we propose a new spin-coating method coupling with high thermal decomposition,to prepare the tin-antimony(Sn-Sb) oxide electrode.The character of the spin-coating electrode was compared with the dip-coating electrode through X-ray diffraction(XRD),scanning electron microscopy(SEM),accelerated life test,cyclic voltammetry,and electrolytic degradability. The results showed that the spin-coating electrode had a better defined crystal form,a smoother and more compact surface than that of the dip-coating electrode.Service time of the spin-coating electrode was determined to be longer than 15 h,and it was less than 2 min for the dip-coating electrode.Electrochemical characterization analysis showed that the electrolytic degradability of the spin-coating electrode is better than that of the dip-coating electrode.
文摘A novel two-step method is employed, for the first time, to fabricatc nonvolatile memory devices that have metal nanoerystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concem for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method.
基金financially supporting this research under Contract No. NSC 102-2221-E-155-076-MY3
文摘An antireflection (AR) coating is fabricated by applying an optimal spin-coating method and a pH-modified SiO2 nanoparticle solution on a cover glass. Because the pH value of the solution will affect the aggregation and dispersion of the SiO2 particles, the transmittance of the AR-treated cover glass will be enhanced under optimal fabricated conditions. The experimental results show that an AR coating fabricated by an SiO2 nano- particle solution of pH 11 enhances the transmittance approximately by 3% and 5% under normal and oblique incident conditions, respectively. Furthermore, the AR-treated cover glass exhibits hydrophobicity and shows a 65% enhancement at a contact angle to bare glass.
基金Project supported by the German Research Foundation(DFG)within the Cluster of Excellence "Center for Advancing Electronics Dresden" and within the Federal Cluster of Excellence EXC 1075 "MERGE Technologies for Multifunctional Lightweight Structures"
文摘The lanthanum(Ⅲ) complex [Li(thf)3(μ-CI)La{N(SiMe3)2}3](3) was obtained by the reaction of LaCl3 with three equiv of Li[N(SiMe3)2]3 in a tetrahydrofuran solution. The molecular structure of 3 in the solid state was characterized by a tetracoordinated anionic lanthanide(Ⅲ) amide in form of an adduct with LiCl(thf)3 as evidenced by single crystal X-ray structure analysis. In order to study the suitability of 3 as a precursor for the deposition of La2O3/LiLaSiO4 by thin layer deposition techniques,its thermal behavior was investigated by thermogravimetry(TG) and TG-MS-coupled studies. TG studies show a two-step decomposition process, whereby volatile decomposition products can be detected during the second decomposition step. TG measurements under an atmosphere of oxygen produced La2O3, Calcination processes of 3 under ambient atmosphere for 10 h at 1000 ℃ gave La2O3 and LiLaSiO4,which was confirmed by PXRD studies. Metal-organic 3 was applied as spin-coating precursor for La2O3 thin film formation giving the as-deposited layers nearly crack-free.
基金Project supported by the German Research Foundation(Cluster of Excellence Center for Advancing Electronics Dresden(cfaed)partially performed within the Federal Cluster of Excellence EXC 1075 MERGE Technologies for Multifunctional Lightweight Structures
文摘The synthesis,structure and thermal behavior of [Y(dbm)3(H2 O)](3)(dbm = 1,3-diphenyl-1,3-propandionate) and its use as a spin-coating precursor for Y2 O3 deposition is reported. Complex 3 was prepared by the reaction of [Y(NO3)3·6 H2 O](1) with 3 equiv of Hdbm(2) in presence of NaOH. The molecular structure of 3 in the solid-state was determined by single X-ray crystal diffraction. Both C1 symmetric crystallographically independent species of 3 possess a YO7 coordination setup with minor deviation from an ideal capped octahedron coordination geometry(∧ enantiomer). Complex 3 forms a1 D chain, due to intermolecular hydrogen bonds between the coordinated H2 O molecule and the 0 atom of the dbm ligand, respectively. The thermal decomposition behavior of 3 was investigated by thermogravimetric studies in the temperature range of 40-800 ℃ and 40-1300 ℃ under an oxygen and argon atmosphere, respectively. Powder X-ray diffraction(PXRD) measurements of the residues confirmed the formation of Y2 O3. Complex 3 was applied as a spin-coating precursor for yttrium oxide film formation on either Si wafers with a continuous 100 nm thick SiO2 film, or with a native oxide layer.The as-deposited Y2 O3 layers are smooth, conformal, dense and transparent and are of a thickness of 27 and 30 nm, respectively.
基金We acknowledge the support from the National Key R&D Program of the Ministry of Science and Technology of China(No.2022YFA1203801)the National Natural Science Foundation of China(grant numbers 51991340,51991343,52221001,62205055)+1 种基金the Hunan Key R&D Program Project(No.2022GK2005)Natural Science Foundation of Jiangsu Province(BK20220860).
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for applications in diverse fields including(opto)electronics,electrocatalysis,and energy storage.Chemical vapor deposition(CVD)is one of the most compelling growth methods for the scalable growth of high-quality 2D TMDs.However,the conventional CVD process for synthesis of 2D TMDs still encounters significant challenges,primarily attributed to the high melting point of precursor powders,and achieving a uniform distribution of precursor atmosphere on the substrate to obtain controllable smaple domains is difficult.The spin-coating precursor mediated chemical vapor deposition(SCVD)strategy provides refinement over traditional methods by eliminating the use of solid precursors and ensuring a more clean and uniform distribution of the growth material on the substrate.Additionally,the SCVD process allows fine-tuning of material thickness and purity by manipulating solution composition,concentration,and the spin coating process.This Review presents a comprehensive summary of recent advances in controllable growth of 2D TMDs with a SCVD strategy.First,a series of various liquid precursors,additives,source supply methods,and substrate engineering strategies for preparing atomically thin TMDs by SCVD are introduced.Then,2D TMDs heterostructures and novel doped TMDs fabricated through the SCVD method are discussed.Finally,the current challenges and perspectives to synthesize 2D TMDs using SCVD are discussed.
基金Project supported by the New-Century Training Program Foundation for Talents of the Natural Science (Grant No. NCET-08-0717)the National Natural Science Foundation of China (Grant Nos. 60777026,60677007 and 60825407)the Program of Introducing Talents of Discipline to Universities (Grant No. B08002)
文摘In the process of fabrication of polymer photovoltaic (PV) devices, poly (3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) thin film, acting as an anode buffer layer, is spin-coated under the action of an electric field. The PV devices with a PEDOT:PSS layer spin-coated under the action of a static electric field exhibit improved short-circuit current density (Jsc) and power conversion efficiency (PCE). The investigation of morphology shows that the appropriate intensity of the electric field can increase the roughness of the surface of the PEDOT:PSS layer, which results in improved contact between the anode and hole transport layer and thus enhances the Jsc of the devices. Chemical analysis is also provided by x-ray photoelectron spectroscopy (XPS) spectra.
基金financially supported by the National Natural Science Foundation of China (Nos. 51421002, 51627803, 91733301, 51761145042, 21501183, 51402348, 53872321, and 11874402)the Knowledge Innovation Program and the Strategic Priority Research Program (Grant XDB 12010400) of the Chinese Academy of Sciences
文摘In CZTSSe solar cells,a simple sodium-incorporation post-treatment method toward solution-processed Cu2Zn Sn S4precursor films is presented in this work.An ultrathin NaCl film is deposited on Cu2Zn Sn S4precursor films by spin-coating NaCl solution.In subsequent selenization process,the introduction of Na Cl is found to be benefacial for the formation of Cu2-xSe,which can further facilitate the element transportation,leading to dense and smooth CZTSSe films with large grains and less impurity Cu2Sn(S,Se)3phase.SIMS depth profiles confirm the gradient distribution of the sodium element in Na-doped absorbers.Photoluminescence spectra show that the introduction of appropriate sodium into the absorber can inhibit the band tail states.As high as 11.18% of power conversion efficiency(PCE)is achieved for the device treated with 5 mg mL^-1 NaCl solution,and an average efficiency of Na-doped devices is 10.71%,13%higher than that of the control groups(9.45%).Besides,the depletion width and the charge recombination lifetime can also have regular variation with sodium treatment.This work offers an easy modification method for high-quality Na-doped CZTSSe films and high-performance devices,in the meantime,it can also help to further understand the effects of sodium in CZTSSe solar cells.
基金supported by the National Natural Science Foundation of China(Nos.11274119,61275038)
文摘A solvent-assisted methodology has been developed to synthesize CH_3NH_3 PbI_3perovskite absorber layers.It involved the use of a mixed solvent of CH_3NH_3 I,PbI_2,c-butyrolactone,and dimethyl sulfoxide(DMSO) followed by the addition of chlorobenzene(CB).The method produced ultra-flat and dense perovskite capping layers atop mesoporous TiO_2 films,enabling a remarkable improvement in the performance of free hole transport material(HTM) carbon electrode-based perovskite solar cells(PSCs).Toluene(TO) was also studied as an additional solvent for comparison.At the annealing temperature of 100 °C,the fabricated HTM-free PSCs based on drop-casting CB demonstrated power conversion efficiency(PCE) of 9.73 %,which is 36 and 71 % higher than those fabricated from the perovskite films using TO or without adding an extra solvent,respectively.The interaction between the PbI_2–DMSO–CH_3NH_3I intermediate phase and the additional solvent was discussed.Furthermore,the influence of the annealing temperature on the absorber film formation,morphology,and crystalline structure was investigated and correlated with the photovoltaic performance.Highly efficient,simple,and stable HTM-free solar cells with a PCE of 11.44 % were prepared utilizing the optimum perovskite absorbers annealed at 120 °C.
基金Projects(50235020 30300078)supported by the National Natural Science Foundation of China
文摘The composite films constituted of hydroxyapatite (HAP) submicron particles embedded in the gel composed of the titania nanoparticles were prepared on commercial Ti6Al4V plates with titania buffer layer obtained by a spin-coating technique. The films were annealed in air at 450 ℃, 550 ℃ and 650 ℃, respectively. The phase formation, surface morphology, andinterfacial microstructure of the films were investigated by X-ray diffraction(XRD),Fourier transform infrared spectroscopy (FT-IR), field emission-scanning electron microscopy(FE-SEM) and energy dispersive X-ray (EDS) analysis. The results show that the as-prepared films are all well-crystallized, dense,homogeneous, and there was a close interfacial bond between the film and the substrate. The results of adhesion test indicate that there is a good bonding strength between the film and the substrate. The bone-like apatite formation on the surface of the films after immersion in acellular simulatedbody fluid(SBF) validated their bioactivities.
基金Project supported by the Innovation Foundation of Beijing University of Aeronautics and Astronautics for PhD Graduates, China (Grant No. 292122)the Equipment Research Foundation of China (Grant No. 373974)
文摘ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al distortion, and the biaxial stresses are 1.03× 10^8. 3.26× 10^8 and Sb are of wurtzite hexagonal ZnO with a very small 5.23 × 10^8, and 6.97× 10^8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5 Ω·cm.
基金supported in part by the Guangdong Basic and Applied Basic Research Foundation(No.2019A1515012216)the National Natural Science Foundation of China(No.11505301)the Innovation Training Program for bachelor students at the School of Physics in SYSU
文摘Scintillation light from a liquid noble gas during a neutrino or dark matter experiment lies typically within the vacuum ultraviolet region and might be strongly absorbed by surrounding materials such as light guides or photomultipliers.Tetraphenyl butadiene(TPB)is a fluorescent material,acts as a wavelength shifter,and can turn UV light into visible light at a peak wavelength of approximately 425 nm,enabling the light signals to be easily detected during physics studies.Compared with a traditional TPB coating method using vapor deposition,we propose an alternative technique applying a spin-coating procedure to facilitate the development of neutrino and dark matter detectors.This article introduces a method to fabricate a TPB film on an acrylic substrate by using a spincoating method,reports the measurements of the sample film thickness and roughness,demonstrates the reemission spectrum,and quantifies the wavelength shifting efficiency.
文摘In this study,tin oxide sensing membrane was derived by sol-gel method and was coated onto indium tin oxide (ITO) glass substrate by spin-coating technique to fabricate a pH sensing electrode.Besides,the morphology of the tin oxide membrane has been discussed through the instrumental analysis.Furthermore,the sensing characteristics of the pH electrode was measured by commercial instrumental amplifier as the readout circuit.Owing to the sol-gel method has many advantages such as easy fabrication of gel solution,ability to dope other materials without any expensive fabricating equipment.Hence,it is suitable for the mass production of a disposable sensor.
文摘This work presents the synthesis of a new hole-buffering material TAZS and its successful application in polymer light-emitting diodes to enhance device performance. The TAZS is composed of aromatic 1,2,4-triazolylcore linked with three trihydroxy tert-butyl terminals via azomethine linkages. The TAZS forms ashomogeneous film deposited by spin-coating process. The HOMO and LUMO levels of TAZS are -5.23 eV and -2.40 eV, respectively, as estimated from cyclic voltammogram. The current density results of hole-only and electron-only devices confirm strong hole-buffering capability of TAZS layer. Multilayer PLEDs with different thickness of TAZS (ITO/PEDOT: PSS/TAZS (x nm)/SY/ETL/LiF/Al) have been successfully fabricated, using spin-coating process to deposit hole-injecting PEDOT: PSS, TAZS, and emissive SY layers. The PLED with 16 nm TAZS reveals the optimal device performance, with maximum luminance and maximum current efficiency of 19,046 cd/m2 and 4.08 cd/A, respectively, surpassing those without TAZS as HBL (8484 cd/m2, 2.13 cd/A). The hole-buffering characteristic of TAZS contributes greatly to improved charges’ recombination ratio and enhanced emission efficiency.
文摘Inserting a hole-buffer layer is an effective way to enhance emission efficiency of electroluminescence devices. We have successfully synthesized a new hole-buffer material PSB composed of pyrene, Schiff base and trihydroxy tert-butyl groups by the Suzuki-coupling reaction. The HOMO and LUMO lev-els were -6.33 eV and -2.55 eV, respectively, as estimated from cyclic volt-ammograms. In addition, homogeneous films (rms roughness ~2 nm) were readily obtained by spin-coating process. Multilayer polymer light-emitting diodes, ITO/PEDOT:PSS/PSB/SY/LiF/Al, have been fabricated using PSB as hole-buffer layer (HBL). Inserting PSB as HBL significantly enhances the per-formance (maximum luminance: 26,439 cd/m2, maximum current efficiency: 7.03 cd/A), compared with the one without PSB (9802 cd/m2, 2.43 cd/A). It is also superior to the device with conventional BCP as hole-blocking layer (ITO/PEDOT:PSS/SY/BCP/LiF/Al: 15,496 cd/m2, 5.56 cd/A). Current results strongly indicate that the PSB is a potential hole-buffer material for electrolu-minescent devices.
基金We would like to thank the the Air Force Office of Scientific Research(AFOSR)for support through the MURI and the DFG for funding by grant HA2042/6-1 and GrK1286.
文摘We introduce a direct method for transferring arrays of GaAs microtubes from an opaque substrate to a transparent glass substrate in a controlled manner. This enables us to build a platform for optical readout of the microtubes’ interaction with overgrown cellular networks. We achieve this by applying a double layer of polydimethylsiloxane (PDMS). The first PDMS layer serves as a smooth and mechanically compliant transparent substrate. The second, adhesive layer contains a mixture of PDMS and n-hexane, which creates a layer thickness smaller than the tube diameter. This will prevent the tubes from sinking into the substrate. The microtubes themselves are made of GaAs heterostructures. The direct bandgap of the material allows for the integration of embedded optical device components into the tube wall. The microtubes have diameters on the same scale as typical mouse cortical axons, being on average 1 μm. The axons can be grown through the tubes, hence maximally enhancing the capacitive coupling of the signal source (axon) and the electrode (tube). Although the tube material is toxic to cells, we are able to overcome this by a parylene-coating step.