Spin-polarization-dependent transport in a quantum dot array coupled with an Aharonov-Bohm ring

In this paper the quantum transport in a dot-array coupled with an Ahaxonov-Bohm （AB） ring is investigated via single-band tight-binding Hamiltonian. It is shown that the output spin current is a periodic function of the magnetic flux in the quantum unit Ф0. The resonance positions of the total transmission probability do not depend on the size of the AB ring but the electronic spectrum. Moreover, the persistent currents in the AB ring is also spin-polarization dependent and different from the isolated AB ring where the persistent current is independent of spin polarization.

Spin-Polarization of Ferroelectric Supperlattice with Spin-1/2 Transverse Ising Model

By using the simple decoupling approximation to Fermi-type Green＇s function for the transverse Ising model under pseudospin theory, we systemically study the influence of different exchange interactions （transverse fields） of the two distinct materials on the polarization and Curie temperature of finite alternating superlattice. Meanwhile, we analyze the effect of the whole parameters of the top surface, present their influence on the polarization of each layer （including the mean polarization of the whole ferroeleetric superlattiee） and on the Curie temperature. The results show the ratio of the exchange interactions （the transverse fields）, which are of the two alternating materials have deeply impact on the polarization and Curie temperature of the supperlattice. Moreover, the top surface also has great influence on the whole ferroelectric superlattice.

Spin-Polarization in Quasi-Magnetic Tunnel Junctions

Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasimagnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter （SF） layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight.

Monte Carlo simulation of in-plane spin-polarized transport in GaAs/GaAlAs quantum well in the three-subband approximation

We develop a Monte Carlo （MC） tool incorporated with the three-subband approximation model to investigate the in-plane spln-polarized transport in GaAs/GaAlAs quantum well. Using the tool, the effects of the electron occupation of higher subbands and the intersuhband scattering on the spin dephasing have been studied. Compared with the corresponding results of the simple one-snbband approximation model, the spin dephasing length is reduced four times under 0.125 kV/cm of driving electric field at 300K by the MC tool incorporated with the three-subband approximation model, indicating that the three-subbarld approximation model predicts significantly shorter spin dephasing length with temperature increasing. Our simulation results suggest that the effects of the electron occupation of higher subbands and the intersubband scattering on the spln-dependent transport of GaAs 2-dhuensional electron gas need to be considered when the driving electric field exceeds the moderate value and the lattice temperature is above 100K. The simulation by using the MC tool incorporated with the three-subband approximation model also indicates that, under a eertain driving electric field and lattice temperature, larger channel widths cause spins to be depolarized faster. Ranges of the three components of the spins are different for three different injected spin polarizations due to the anisotropy of spin-orbit interaction.

Spin-polarized quantum transport through an Aharonov-Bohm quantum-dot-ring

In this paper the quantum transport through an Aharonov-Bohm （AB） quantum-dot-ring with two dot-array arms described by a single-band tight-binding Hamiltonian is investigated in the presence of additional magnetic fields applied to the dot-array arms to produce spin flip of electrons. A far richer interference pattern than that in the charge transport alone is found. Besides the usual AB oscillation the tunable spin polarization of the current by the magnetic flux is a new observation and is seen to be particularly useful in technical applications. The spectrum of transmission probability is modulated by the quantum dot numbers on the up-arc and down-arc of the ring, which, however, does not affect the period of the AB oscillation.

Effects of bias on spin-polarized transport properties in double magnetic tunnel junctions

Spin-polarized transport properties in Fe /insulator (Ⅰ) (semiconductor (S)) / Co / I (S) / Fe double junction systems are investigated theoretically, current density is asymmetry as function of the direction of applied bias, and evaluated using generalized formalism base on the non-equilibrium Green's function, which is implemented with calculation of real space Green's function in tight-binding model in linear response region.

Photon-mediated spin-polarized current in a quantum dot under thermal bias

Spin-polarized current generated by thermal bias across a system composed of a quantum dot （QD） connected to metallic leads is studied in the presence of magnetic and photon fields. The current of a certain spin orientation vanishes when the dot level is aligned to the lead＇s chemical potential, resulting in a 100% spin-polarized current. The spin-resolved current also changes its sign at the two sides of the zero points. By tuning the system＇s parameters, spin-up and spin-down currents with equal strength may flow in opposite directions, which induces a pure spin current without the accompany of charge current. With the help of the thermal bias, both the strength and the direction of the spin-polarized current can be manipulated by tuning either the frequency or the intensity of the photon field, which is beyond the reach of the usual electric bias voltage.

Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

Effective spin-polarized injection from magnetic semiconductor （MS） to nonmagnetic semiconductor （NMS） has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization （NESP） in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.

Faster vortex core switching with lower current density using three-nanocontact spin-polarized currents in a confined structure

We perform micromagnetic simulations on the switching of magnetic vortex core by using spin-polarized currents through a three-nanocontact geometry. Our simulation results show that the current combination with an appropriate current flow direction destroys the symmetry of the total effective energy of the system so that the vortex core can be easier to excite,resulting in less critical current density and a faster switching process. Besides its fundamental significance, our findings provide an additional route to incorporating magnetic vortex phenomena into data storage devices.

Spin-Polarized Transport through a Quantum Dot Coupled to Ferromagnetic Leads and a Mesoscopic Ring

Using an equation of motion technique, we investigate the spin-polarized transport through a quantum dot coupled to ferromagnetic leads and a mesoseopie ring by the Anderson Hamiltonian. We analyze the transmission probability of this system in both the equilibrium and nonequilibrium cases, and our results reveal that the transport properties show some noticeable characteristics depending upon the spin-polarized strength p, the magnetic flux Ф and the number of lattice sites NR in the mesoseopic ring. These effects might have some potential applications in spintronics.

Antiresonance induced spin-polarized current generation

According to the one-dimensional antiresonance effect （Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402）, we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today＇s technology.

Spin-Polarized Carriers Injection from Ferromagnetic Metal into Organic Semiconductor

Charge carriers in organic semiconductor are different from that of traditional inorganic semiconductor. Based on three-current model, considering electrical field effect, we present a theoretical model to discuss spin-polarized injection from ferromagnetic electrode into organic semiconductor by analyzing electrochemical potential both in ferromagnetic electrode and organic semiconductors. The calculated result of this model shows effects of electrode＇s spin polarization, equilibrium value of polarons ratio, interracial conductance, bulk conductivity of materials and electrical field. It is found that we could get decent spin polarization with common ferromagnetic electrode by increasing equilibrium value of polarons ratio. We also find that large and matched bulk conductivity of organic semiconductor and electrode, small spin-dependent interracial conductance, and enough large electrical field are critical factors for increasing spin polarization.

Spin-polarized current in double quantum dots

We analyze the transport through asymmetric double quantum dots with an inhomogeneous Zeeman splitting in the presence of crossed dc and ac magnetic fields. A strong spin-polarized current can be obtained by changing the dc magnetic field. It is mainly due to the resonant tunnelling. But for the ferromagnetic right electrode, the electron spin resonance also plays an important role in transport. We show that the double quantum dots with three-level mixing under crossed dc and ac magnetic fields can act not only as a bipolar spin filter but also as a spin inverter under suitable conditions.

Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls

Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically.It is shown that the Rashba spin–orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier＇s Fermi wavelength.When there are more than one domain wall presented in a magnetic semiconductor nanowire,not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport,and in such cases the influences of the Rashba spin–orbit coupling will depend sensitively both on the domain walls＇ width and the domain walls＇ separation.

Spin-polarized oscillations of conductance through an Aharonov-Casher ring with a quantum gate

Spin-polarized oscillations in conductance is studied through a mesoscopic Aharonov-Casher （AC） ring with a quantum gate that is tuned by an external magnetic field. Both the conductance and its spin polarization at zero temperature are calculated as a function of the textured electric field, the magnetic field, and Fermi energy. It is found that for some special Fermi energies, spin-up electrons are driven into perfect transmission or reflection states, unaffected by the electric field when Zeeman energy of the incident electrons aligns with one level of the isolated stub or is larger than Fermi energy. This brings about AC oscillations of spin-down conductance. It shows that periodic oscillations of the conductance appear in the adiabatic region of quantum phase and in the normdiabatic region. Anomalous behavior of the conductance oscillation is dependent on the difference between the tilt angle of spin and the electric field.

Co and Phthalocyanine Overlayers on the Quantum-Well System Co(001)/Cu: Spin-Polarized Electron Reflection Experiments

The influence of a Co or phthalocyanine (Pc) molecular overlayer on the properties of quantum-well resonances (QWR) in Cu layers atop Co(001) is studied by means of spin-polarized electron reflection. For Co atoms and Pc molecules, an energy shift of the QWR-induced signal is observed with increasing coverage and is attributed to a variation of the electron reflection phase at the Cu/Co and Cu/Pc interface. For Co we find a linear energy shift in the Cu QWR energy position with increasing coverage down to the sub-monolayer regime. This shows that the phase accumulation model remains accurate within the sub-monolayer regime of a discontinuous interface. An opposite sign in the energy shift between Co and Pc overlayers could reflect an opposite impact on the Cu surface work function of overlayer adsorption.

Modulating magnetism of nitrogen-doped zigzag graphene nanoribbons

We present a study of electronic properties of zigzag graphene nanoribbons （ZGNRs） substitutionally doped with nitrogen atoms at a single edge by first principle calculations. We find that the two edge states near the Fermi level sepa- rate due to the asymmetric nitrogen-doping. The ground states of these systems become ferromagnetic because the local magnetic moments along the undoped edges remain and those along the doped edges are suppressed. By controlling the charge-doping level, the magnetic moments of the whole ribbons are modulated. Proper charge doping leads to interest- ing half-metallic and single-edge conducting ribbons which would be helpful for designing graphene-nanoribbon-based spintronic devices in the future.

Wave-Vector and Temperature-Dependent Electron Transport in a Magnetic Nanostructure Modulated by Bias

We theoretically investigate the wave-vector and temperature-dependent electron transport in a magneticnanostructure modulated by an applied bias.The large spin-polarization can be achieved in such a device,and the degreeof spin-polarization strongly depends on the transverse wave-vector and the temperature.These interesting propertiesmay be helpful to spin-polarize electrons into semiconductors,and this device may be used as a spin filter.

An Explicit Function Expression for dc Bias and Temperature Dependence of Magnetoresistances in Magnetic Tunnel Junctions

An explicit function expression for the bias voltage or/and temperature dependences of tunnel magnetoresistance ratio and resistances were obtained with a unique set of intrinsic parameters. Two of these intrinsic parameters are the Curie temperature TC and the density of state (DOS) for itinerant majority and minority electrons ξ(ρM/ρm), which are the eigen parameters of ferromagnetic electrodes. Others are the spin-dependent matrix-element ratio (i.e., |Td|2/|TJ|2 ) and the anisotropic-wavelength-cutoff energy ECγ of spin-wave spectrum in magnetic tunnel junction (MTJ), which are the structure parameters of an MTJ. These intrinsic parameters can be predetermined using the experimental measurement or, in principle, using the first-principle calculation method for an MTJ with the three key layers of FM/I/FM. Furthermore, a series of experimental data for an MTJ, for example, a spin-valve-type MTJ of Ta (5 nm)/Ni79Fe21(25 nm)/lr22Mn78(12 nm)/Co75Fe25(4 nm)/AI(0.8 nm)-oxide/Co75Fe25(4 nm)/Ni79Fe21(20 nm)/Ta (5 nm) in this work, can be self-consistently evaluated and explained using such concise explicit function formulations.

86% TMR at 4.2 K for Amorphous Magnetic-Tunnel-Junctions with Co_(60)Fe_(20)B_(20) as Free and Pinned Layers

Single barrier magnetic-tunnel-junctions (MTJs) with the layer structure of Ta(5)/Cu(30)/Ta(5)/Ni79Fe21(5)/Ir22 Mn78(12)/Co60Fe20B20(4)/Al(0.8)-oxide/Co60Fe20B20(4)/Cu(30)/Ta(5) [thickness unit: nm] using the amorphous Co60Fe20B20 alloy as free and pinned layers were micro-fabricated. The experimental investigations showed that the tunnel magnetoresistance (TMR) ratio and the resistance decrease with increasing dc bias voltage from 0 to 500 mV or with increasing temperature from 4.2 K to RT. A high TMR ratio of 86.2% at 4.2 K, which corresponds to the high spin polarization of Co60Fe20B20, 55%, was observed in the MTJs after annealing at 270℃ for 1 h. High TMR ratio of 53.1%, low junction resistance-area product RS of 3.56 kΩμm2, small coercivity HC of ≤4 Oe, and relatively large bias-voltage-at-half-maximum TMR with the value V1/2 of greater than 570 mV at RT have been achieved in such Co-Fe-B MTJs.