Two-dimensional(2D)WSe_(2)has received increasing attention due to its unique optical properties and bipolar behavior.Several WSe_(2)-based heterojunctions exhibit bidirectional rectification characteristics,but most ...Two-dimensional(2D)WSe_(2)has received increasing attention due to its unique optical properties and bipolar behavior.Several WSe_(2)-based heterojunctions exhibit bidirectional rectification characteristics,but most devices have a lower rectification ratio.In this work,the Bi_(2)O_(2)Se/WSe_(2)heterojunction prepared by us has a typeⅡband alignment,which can vastly suppress the channel current through the interface barrier so that the Bi_(2)O_(2)Se/WSe_(2)heterojunction device has a large rectification ratio of about 10^(5).Meanwhile,under different gate voltage modulation,the current on/off ratio of the device changes by nearly five orders of magnitude,and the maximum current on/off ratio is expected to be achieved 106.The photocurrent measurement reveals the behavior of recombination and space charge confinement,further verifying the bidirectional rectification behavior of heterojunctions,and it also exhibits excellent performance in light response.In the future,Bi_(2)O_(2)Se/WSe_(2)heterojunction field-effect transistors have great potential to reduce the volume of integrated circuits as a bidirectional controlled switching device.展开更多
With the advantage of fast charge transfer,heterojunction engineering is identified as a viable method to reinforce the anodes'sodium storage performance.Also,vacancies can effectively strengthen the Na+adsorption...With the advantage of fast charge transfer,heterojunction engineering is identified as a viable method to reinforce the anodes'sodium storage performance.Also,vacancies can effectively strengthen the Na+adsorption ability and provide extra active sites for Na+adsorption.However,their synchronous engineering is rarely reported.Herein,a hybrid of Co_(0.85)Se/WSe_(2) heterostructure with Se vacancies and N-doped carbon polyhedron(CoWSe/NCP)has been fabricated for the first time via a hydrothermal and subsequent selenization strategy.Spherical aberration-corrected transmission electron microscopy confirms the phase interface of the Co_(0.85)Se/WSe_(2) heterostructure and the existence of Se vacancies.Density functional theory simulations reveal the accelerated charge transfer and enhanced Na+adsorption ability,which are contributed by the Co_(0.85)Se/WSe_(2) heterostructure and Se vacancies,respectively.As expected,the CoWSe/NCP anode in sodium-ion battery achieves outstanding rate capability(339.6 mAh g^(−1) at 20 A g^(−1)),outperforming almost all Co/W-based selenides.展开更多
An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivi...An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivity and photocarrier density at the heterojunction interface remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of 173 nm Sb2Se3/Si(type-Ⅰ heterojunction) and 90 nm Sb2Se3/Si(type-Ⅱ heterojunction) utilizing terahertz(THz) time-domain spectroscopy(THz-TDS) and a theoretical Drude model. Since type-Ⅰ heterojunctions accelerate carrier recombination and type-Ⅱ heterojunctions accelerate carrier separation, the photoconductivity and photocarrier density of the type-Ⅱ heterojunction(21.8×10^(4)S·m^(-1),1.5 × 10^(15)cm^(-3)) are higher than those of the type-Ⅰ heterojunction(11.8×10^(4)S·m^(-1),0.8×10^(15)cm^(-3)). These results demonstrate that a type-Ⅱ heterojunction is superior to a type-Ⅰ heterojunction for THz wave modulation. This work highlights THz-TDS as an effective tool for studying photoconductivity and photocarrier density at the heterojunction interface. In turn, the intriguing interfacial photoconductivity effect provides a way to improve the THz wave modulation performance.展开更多
Two-dimensional materials have shown great application potential in high-performance electronic devices because they are ultrathin,have an ultra-large specific surface area,high carrier mobility,efficient channel curr...Two-dimensional materials have shown great application potential in high-performance electronic devices because they are ultrathin,have an ultra-large specific surface area,high carrier mobility,efficient channel current regulation,and extraordinary integration.In addition to graphene,other types of 2D nanomaterials have also been studied and applied in photodetectors,solar cells,energy storage devices,and so on.Bi_(2)O_(2)Se is an emerging 2D semiconductor material with very high electron mobility,modest bandgap,near-ideal subthreshold swing,and excellent thermal and chemical stability.Even in a monolayer structure,Bi_(2)O_(2)Se has still exhibited efficient light absorption.In this mini review,the latest main research progresses on the preparation methods,electric structure,and the optical,mechanical,and thermoelectric properties of Bi_(2)O_(2)Se are summarized.The wide rang of applications in electronics and photoelectronic devices are then reviewed.This review concludes with a discussion of the existing open questions/challenges and future prospects for Bi_(2)O_(2)Se.展开更多
本文报道用分子束外延(Molecular Beam Epitaxy:MBE)技术制备了优良的铬(Cr)掺杂硒化铋(Cr-Bi_(2)Se_(3))薄膜样品。通过反射高能电子衍射(Reflective High Energy Electron Diffraction:RHEED)、X射线衍射(X-ray diffraction:XRD)技术...本文报道用分子束外延(Molecular Beam Epitaxy:MBE)技术制备了优良的铬(Cr)掺杂硒化铋(Cr-Bi_(2)Se_(3))薄膜样品。通过反射高能电子衍射(Reflective High Energy Electron Diffraction:RHEED)、X射线衍射(X-ray diffraction:XRD)技术和电磁输运系统对Cr-Bi_(2)Se_(3)进行测试。实验结果显示:较低的生长温度下Cr进入Bi_(2)Se_(3)中替代Bi位形成Cr Bi;较高的生长温度下Cr进入Bi_(2)Se_(3)中的范德瓦尔斯间隙形成层间(Interlayer)CrI,这一区别导致Cr-Bi_(2)Se_(3)在生长速率及磁性等方面表现出不同的性质。所以可以通过控制生长温度来调制Cr的掺杂位置,得到更理想的效果。展开更多
As a thin film solar cell absorber material, antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) has become a potential candidate recently because of its unique optical and electrical properties a...As a thin film solar cell absorber material, antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb<sub>2</sub>Se<sub>3</sub> thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.展开更多
基金This work was supported by the National Natural Science Foundation of China(61704054,92161115,62374099,and 62022047)the Fundamental Research Funds for the Central Universities(JB2020MS042 and JB2019MS051).
文摘Two-dimensional(2D)WSe_(2)has received increasing attention due to its unique optical properties and bipolar behavior.Several WSe_(2)-based heterojunctions exhibit bidirectional rectification characteristics,but most devices have a lower rectification ratio.In this work,the Bi_(2)O_(2)Se/WSe_(2)heterojunction prepared by us has a typeⅡband alignment,which can vastly suppress the channel current through the interface barrier so that the Bi_(2)O_(2)Se/WSe_(2)heterojunction device has a large rectification ratio of about 10^(5).Meanwhile,under different gate voltage modulation,the current on/off ratio of the device changes by nearly five orders of magnitude,and the maximum current on/off ratio is expected to be achieved 106.The photocurrent measurement reveals the behavior of recombination and space charge confinement,further verifying the bidirectional rectification behavior of heterojunctions,and it also exhibits excellent performance in light response.In the future,Bi_(2)O_(2)Se/WSe_(2)heterojunction field-effect transistors have great potential to reduce the volume of integrated circuits as a bidirectional controlled switching device.
基金support from the Natural Science Foundation of Jilin Province(Grant No.20200201073JC)the National Natural Science Foundation of China(Grant No.52130101)+1 种基金Interdisciplinary Integration and Innovation Project of JLU(Grant No.JLUXKJC2021ZY01)the Fundamental Research Funds for the Central Universities.
文摘With the advantage of fast charge transfer,heterojunction engineering is identified as a viable method to reinforce the anodes'sodium storage performance.Also,vacancies can effectively strengthen the Na+adsorption ability and provide extra active sites for Na+adsorption.However,their synchronous engineering is rarely reported.Herein,a hybrid of Co_(0.85)Se/WSe_(2) heterostructure with Se vacancies and N-doped carbon polyhedron(CoWSe/NCP)has been fabricated for the first time via a hydrothermal and subsequent selenization strategy.Spherical aberration-corrected transmission electron microscopy confirms the phase interface of the Co_(0.85)Se/WSe_(2) heterostructure and the existence of Se vacancies.Density functional theory simulations reveal the accelerated charge transfer and enhanced Na+adsorption ability,which are contributed by the Co_(0.85)Se/WSe_(2) heterostructure and Se vacancies,respectively.As expected,the CoWSe/NCP anode in sodium-ion battery achieves outstanding rate capability(339.6 mAh g^(−1) at 20 A g^(−1)),outperforming almost all Co/W-based selenides.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 12261141662, 12074311, and 12004310)。
文摘An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivity and photocarrier density at the heterojunction interface remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of 173 nm Sb2Se3/Si(type-Ⅰ heterojunction) and 90 nm Sb2Se3/Si(type-Ⅱ heterojunction) utilizing terahertz(THz) time-domain spectroscopy(THz-TDS) and a theoretical Drude model. Since type-Ⅰ heterojunctions accelerate carrier recombination and type-Ⅱ heterojunctions accelerate carrier separation, the photoconductivity and photocarrier density of the type-Ⅱ heterojunction(21.8×10^(4)S·m^(-1),1.5 × 10^(15)cm^(-3)) are higher than those of the type-Ⅰ heterojunction(11.8×10^(4)S·m^(-1),0.8×10^(15)cm^(-3)). These results demonstrate that a type-Ⅱ heterojunction is superior to a type-Ⅰ heterojunction for THz wave modulation. This work highlights THz-TDS as an effective tool for studying photoconductivity and photocarrier density at the heterojunction interface. In turn, the intriguing interfacial photoconductivity effect provides a way to improve the THz wave modulation performance.
基金supported by China University of Geosciences(Beijing)College Students'Innovative Entrepreneurial Training Plan Program(No.202211415026)National Natural Science Foundation of China(No.11974318)China University of Geosciences(Beijing)2021 Undergraduate Education Quality Improvement Plan Construction Project(No.XNFZ202106).
文摘Two-dimensional materials have shown great application potential in high-performance electronic devices because they are ultrathin,have an ultra-large specific surface area,high carrier mobility,efficient channel current regulation,and extraordinary integration.In addition to graphene,other types of 2D nanomaterials have also been studied and applied in photodetectors,solar cells,energy storage devices,and so on.Bi_(2)O_(2)Se is an emerging 2D semiconductor material with very high electron mobility,modest bandgap,near-ideal subthreshold swing,and excellent thermal and chemical stability.Even in a monolayer structure,Bi_(2)O_(2)Se has still exhibited efficient light absorption.In this mini review,the latest main research progresses on the preparation methods,electric structure,and the optical,mechanical,and thermoelectric properties of Bi_(2)O_(2)Se are summarized.The wide rang of applications in electronics and photoelectronic devices are then reviewed.This review concludes with a discussion of the existing open questions/challenges and future prospects for Bi_(2)O_(2)Se.
文摘本文报道用分子束外延(Molecular Beam Epitaxy:MBE)技术制备了优良的铬(Cr)掺杂硒化铋(Cr-Bi_(2)Se_(3))薄膜样品。通过反射高能电子衍射(Reflective High Energy Electron Diffraction:RHEED)、X射线衍射(X-ray diffraction:XRD)技术和电磁输运系统对Cr-Bi_(2)Se_(3)进行测试。实验结果显示:较低的生长温度下Cr进入Bi_(2)Se_(3)中替代Bi位形成Cr Bi;较高的生长温度下Cr进入Bi_(2)Se_(3)中的范德瓦尔斯间隙形成层间(Interlayer)CrI,这一区别导致Cr-Bi_(2)Se_(3)在生长速率及磁性等方面表现出不同的性质。所以可以通过控制生长温度来调制Cr的掺杂位置,得到更理想的效果。
文摘As a thin film solar cell absorber material, antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb<sub>2</sub>Se<sub>3</sub> thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.
