Local annealing of amorphous NiTi thin films was performed by using an Nd：YAG 1064 nm wavelength pulsed laser beam. Raw samples produced by simultaneous sputter deposition from elemental Ni and Ti targets onto unheat...Local annealing of amorphous NiTi thin films was performed by using an Nd：YAG 1064 nm wavelength pulsed laser beam. Raw samples produced by simultaneous sputter deposition from elemental Ni and Ti targets onto unheated Si （100） and Silica （111） substrates were used for annealing. Delicate treatment with 15.92 W/mm^2 power density resulted in crystallization of small spots; while 16.52 and 17.51 W/mm^2 power densities caused ablation of the amorphous layer. Optical microscopy, scanning electron microscopy, X-ray diffraction and atomic force microscopy were performed to characterize the microstructure and surface morphology of the amorphous/crystallized spot patterns.展开更多
热点温度是影响金属化薄膜电容器(metallized film capacitors,MFC)绝缘寿命的重要因素之一,但由于其无法直接测量,因此通常采用热仿真分析或温度反演的方法获得。该文提出了基于共轭梯度法(conjugategradient method,CG)的热点温度反...热点温度是影响金属化薄膜电容器(metallized film capacitors,MFC)绝缘寿命的重要因素之一,但由于其无法直接测量,因此通常采用热仿真分析或温度反演的方法获得。该文提出了基于共轭梯度法(conjugategradient method,CG)的热点温度反演模型,建立了内部传热过程的温度分布目标函数,采用有限差分法求解电容器温度场,再通过CG对内部温度分布进行迭代求解。同时,通过交流温升试验校核了仿真模型以及反演模型。研究结果表明:热点温升与表面温升存在线性关系,热点温度出现在MFC中央靠近芯轴处,反演模型与仿真模型最大误差为4.35%,说明该模型可实现现场工况下的温度分布、热点分布等的有效预测。展开更多
文摘Local annealing of amorphous NiTi thin films was performed by using an Nd：YAG 1064 nm wavelength pulsed laser beam. Raw samples produced by simultaneous sputter deposition from elemental Ni and Ti targets onto unheated Si （100） and Silica （111） substrates were used for annealing. Delicate treatment with 15.92 W/mm^2 power density resulted in crystallization of small spots; while 16.52 and 17.51 W/mm^2 power densities caused ablation of the amorphous layer. Optical microscopy, scanning electron microscopy, X-ray diffraction and atomic force microscopy were performed to characterize the microstructure and surface morphology of the amorphous/crystallized spot patterns.
文摘热点温度是影响金属化薄膜电容器(metallized film capacitors,MFC)绝缘寿命的重要因素之一,但由于其无法直接测量,因此通常采用热仿真分析或温度反演的方法获得。该文提出了基于共轭梯度法(conjugategradient method,CG)的热点温度反演模型,建立了内部传热过程的温度分布目标函数,采用有限差分法求解电容器温度场,再通过CG对内部温度分布进行迭代求解。同时,通过交流温升试验校核了仿真模型以及反演模型。研究结果表明:热点温升与表面温升存在线性关系,热点温度出现在MFC中央靠近芯轴处,反演模型与仿真模型最大误差为4.35%,说明该模型可实现现场工况下的温度分布、热点分布等的有效预测。
