Current spreading in GaN-based light-emitting diodes

We have investigated the factors affecting the current spreading length（CSL） in GaN-based light-emitting diodes（LEDs） by deriving theoretical expressions and performing simulations with APSYS.For mesa-structure LEDs,the effects of both indium tin oxide（ITO） and n-GaN are taken into account for the first time,and a new Q factor is introduced to explain the effects of different current flow paths on the CSL.The calculations and simulations show that the CSL can be enhanced by increasing the thickness of the ITO layer and resistivity of the n-GaN layer,or by reducing the resistivity of the ITO layer and thickness of the n-GaN layer.The results provide theoretical support for calculating the CSL clearly and directly.For vertical-structure LEDs,the effects of resistivity and thickness of the CSL on the internal quantum efficiency（IQE） have been analyzed.The theoretical expression relating current density and the parameters（resistivity and thickness）of the CSL is obtained,and the results are then verified by simulation.The IQE under different current injection conditions is discussed.The effects of CSL resistivity play a key role at high current injection,and there is an optimal thickness for the largest IQE only at a low current injection.

A Detailed Thermal Resistance Network Analysis of FCBGA Package

Using thermal models to describe the heat dissipation process of FCBGA is a significant topic in the field of packaging.However,the thermal resistance model considering the structure of each part of the chip is still ambiguous and rare,but it is quite desirable in engineering.In this work,we propose a detailed thermal resistance network model,and describe it by using thermal conduction resistance and thermal spreading resistance.For a striking FCBGA case,we calculated the thermal resistance of each part of the structure according to the temperature field simulated by COMSOL.The thermal resistance network can be used to predict the temperatures in the chip under different conditions.For example,when the power changes by 40%,the relative error of junction temperature prediction is only 0.24%.The function of the detailed thermal resistance network in evaluating the optimization space and determining the optimization direction is clarified.This work illustrates a potential thermal resistance analysis method for electronic devices such as FCBGA.