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One-dimensional diffusion of vacancies on an Sr/Si(100)-c(2×4) surface
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作者 杨景景 杜文汉 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第6期481-484,共4页
An Sr/Si(100)-c(2 ×4) surface is investigated by high-resolution scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The semiconductor property of this surface is confirmed by S... An Sr/Si(100)-c(2 ×4) surface is investigated by high-resolution scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The semiconductor property of this surface is confirmed by STS. The STM images of this surface shows that it is bias-voltage dependent and an atomic resolution image can be obtained at an empty state under a bias voltage of 1.5 V. Furthermore, one-dimensional (ID) diffusion of vacancies can be found in the room-temperature STM images. Sr vacancies diffuse along the valley channels, which are constructed by silicon dimers in the surface. Weak interaction between Sr and silicon dimers, low metal coverage, surface vacancy, and energy of thermal fluctuation at room temperature all contribute to this 1D diffusion. 展开更多
关键词 sr/si(100)-c(2 × 4) STM diffusion of vacancies
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Sr/Si(100)表面TiSi_2纳米岛的扫描隧道显微镜研究 被引量:1
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作者 杨景景 杜文汉 《物理学报》 SCIE EI CAS CSCD 北大核心 2011年第3期598-603,共6页
为了解半导体衬底与氧化物之间存在的相互作用,以及量子尺寸效应对不同再构体的影响,制备了1—2个原子层厚的TiSi2/Si(100)纳米岛,并使用扫描隧道显微镜(STM)表征手段详细地研究了TiSi2/Si(100)纳米岛的电子和几何特性.结果发现:这些纳... 为了解半导体衬底与氧化物之间存在的相互作用,以及量子尺寸效应对不同再构体的影响,制备了1—2个原子层厚的TiSi2/Si(100)纳米岛,并使用扫描隧道显微镜(STM)表征手段详细地研究了TiSi2/Si(100)纳米岛的电子和几何特性.结果发现:这些纳米岛表面显示出明显的金属性;其空态STM图像具有典型的偏压依赖性:在高偏压下STM图像由三聚物形成的单胞构成,并在低偏压下STM图像显示为密堆积的图案,这些不同的图案反映出不同能量位的态密度有明显差异. 展开更多
关键词 Tisi2纳米岛 sr/si(100)表面 扫描隧道显微镜
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