Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 ...Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 B OBi Coa Co with Ba0.5Bi0.5Fe0.9Sn0.1O3. The electrical properties of the thick films were characterized by a digital multimeter, a Keithley 2400 and an impedance analyzer. The results show that with the Ba0.5Bi0.5Fe0.9Sn0.1O3 content increasing from 0.05 to 0.25, the values of room-temperature resistivity, thermistor constant and peak voltage of the thick films increases and are in the ranges of 1.47-26.5 ？·cm, 678-1345 K and 18.9-47.0 V, respectively. The corresponding current at the peak voltage of the thick films decreases and is in the range of 40-240 m A. The impedance spectroscopy measurement demonstrates that the as-prepared thick films show the abnormal electrical heterogeneous microstructure, consisting of high-resistive grains and less resistive grain boundary regions. It can be concluded that the addition of Ba0.5Bi0.5Fe0.9Sn0.1O3 into 30.94III0.04II0.02 Ba Co OBi Co improves the thermistor behavior and but also deteriorates the current characteristics.展开更多
Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators（FBARs） based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3（BST） fi...Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators（FBARs） based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3（BST） films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias（ 45 V） while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum（Mo） as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature.展开更多
（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental r...（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization P, remnant polarization Pr and coercive field E were about 4.6 μC/cm2, 2.5 μC/cm2 and 23 kV/cm （the coercive voltage is 0.7 V）, respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories （NvFeRAMs）.展开更多
Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage curre...Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.展开更多
Ba0.5Sr0.5Co0.5Fe0.2O3-σ(BSCF), a new cathode material for solid oxide fuel cell (SOFC), was synthesized by polyacrylicacid (PAA) method. The lattice structures of samples calcined at different temperatures were char...Ba0.5Sr0.5Co0.5Fe0.2O3-σ(BSCF), a new cathode material for solid oxide fuel cell (SOFC), was synthesized by polyacrylicacid (PAA) method. The lattice structures of samples calcined at different temperatures were characterized by XRD, Shrinkage, porosity and pore size of the porous BSCF as a function of sintering temperature were investigated. It was found that the cubic perovskite structure could be formed after calcination at 800 ℃ for 2 h, but not well crystallized as seen from some unknown phases, and the pure cubic perovskite structure was formed after calcination at 1150 ℃ for 2 h. The panicle size of BSCF was less than 1-2 μm. The shrinkage of the porous BSCF increased with sintering temperature, but the opposite was true for the porosity. After sintering at 1100 ℃ for 4 h, the porous BSCF was still in an appropriate structure, with porosity of 29% and electrical conductivity above 400 S·cm^-1.展开更多
Ba\-\{0.5\}Sr\-\{0.5\}Co\-\{0.8\}Fe\-\{0.2\}O\-\{3-\%δ\%\} and Ba\-\{0.5\}Sr\-\{0.5\}Co\-\{0.8\}Ti\-\{0.2\}O\-\{3-\%δ\%\} oxides were synthesized by a combined EDTA\|citrate complexing method. The catalytic behavior...Ba\-\{0.5\}Sr\-\{0.5\}Co\-\{0.8\}Fe\-\{0.2\}O\-\{3-\%δ\%\} and Ba\-\{0.5\}Sr\-\{0.5\}Co\-\{0.8\}Ti\-\{0.2\}O\-\{3-\%δ\%\} oxides were synthesized by a combined EDTA\|citrate complexing method. The catalytic behavior of these two oxides with the perovskite structure was studied during the reaction of methane oxidation. The pre\|treatment with methane has different effect on the catalytic activities of both the oxides. The methane pre\|treatment has not resulted in the change of the catalytic activity of BSCFO owing to its excellent reversibility of the perovskite structure resulting from the excellent synergistic interaction between Co and Fe in the oxide. However, the substitution with Ti on Fe\|site in the lattice makes the methane pre\|treatment have an obvious influence on the activity of the formed BSCTO oxide.展开更多
通过甘氨酸硝酸盐法（GNP）合成了钙钛矿型Ba0.5Sr0.5Co0.8Fe0.2O3-δ（BSCF）复合氧化物粉体。经压制、烧结后,得到了BSCF烧结体试样,还通过硝酸溶液浸蚀处理对烧结体试样进行了表面浸蚀处理。采用X射线衍射仪（XRD）对煅烧后的粉体进...通过甘氨酸硝酸盐法（GNP）合成了钙钛矿型Ba0.5Sr0.5Co0.8Fe0.2O3-δ（BSCF）复合氧化物粉体。经压制、烧结后,得到了BSCF烧结体试样,还通过硝酸溶液浸蚀处理对烧结体试样进行了表面浸蚀处理。采用X射线衍射仪（XRD）对煅烧后的粉体进行了相成分分析;采用扫描电子显微镜（SEM）及能谱仪（EDS）对烧结体和表面浸蚀后烧结体样品的微观组织和成分进行了表征;对烧结体的致密度、电导率进行了测试分析,并在自制的氧渗透装置上测定了BSCF钙钛矿膜的透氧量,分析了温度和不同氧分压差等对膜透氧性能的影响。实验结果表明,甘氨酸-硝酸盐法所制备的前驱体粉末在900℃煅烧3 h后可获得具有单一钙钛矿结构的BSCF粉体,1100℃煅烧的BSCF烧结体的电导率在600℃时最大达到38.15 S·cm-1。其透氧量随着温度和氧分压差的升高而增大,且硝酸表面浸蚀处理后,BSCF膜片的透氧性能有明显提高,透氧速率提高1.6~4.5倍。850℃,20%O2-80%N2混合气体/He条件下,浸蚀后的透氧膜片的透氧量达到2.36 m L/cm2·min,而未浸蚀透氧膜片的透氧量仅为1.36 m L/cm2·min。展开更多
基金Projects(5110205551462005)supported by the National Natural Science Foundation of China
文摘Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 B OBi Coa Co with Ba0.5Bi0.5Fe0.9Sn0.1O3. The electrical properties of the thick films were characterized by a digital multimeter, a Keithley 2400 and an impedance analyzer. The results show that with the Ba0.5Bi0.5Fe0.9Sn0.1O3 content increasing from 0.05 to 0.25, the values of room-temperature resistivity, thermistor constant and peak voltage of the thick films increases and are in the ranges of 1.47-26.5 ？·cm, 678-1345 K and 18.9-47.0 V, respectively. The corresponding current at the peak voltage of the thick films decreases and is in the range of 40-240 m A. The impedance spectroscopy measurement demonstrates that the as-prepared thick films show the abnormal electrical heterogeneous microstructure, consisting of high-resistive grains and less resistive grain boundary regions. It can be concluded that the addition of Ba0.5Bi0.5Fe0.9Sn0.1O3 into 30.94III0.04II0.02 Ba Co OBi Co improves the thermistor behavior and but also deteriorates the current characteristics.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60871049 and 50972024)
文摘Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators（FBARs） based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3（BST） films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias（ 45 V） while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum（Mo） as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature.
基金the National Natural Science Foundation of China(No.60571009)
文摘（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization P, remnant polarization Pr and coercive field E were about 4.6 μC/cm2, 2.5 μC/cm2 and 23 kV/cm （the coercive voltage is 0.7 V）, respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories （NvFeRAMs）.
基金Project supported by the Foundation of the Education Commission of Shanghai Municipality (Grant Nos.07ZZ14, 08SG41)the National Natural Science Foundation of China (Grant No.50711130241)the Shanghai Rising Star Program (GrantNo.08QH14008)
文摘Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.
文摘Ba0.5Sr0.5Co0.5Fe0.2O3-σ(BSCF), a new cathode material for solid oxide fuel cell (SOFC), was synthesized by polyacrylicacid (PAA) method. The lattice structures of samples calcined at different temperatures were characterized by XRD, Shrinkage, porosity and pore size of the porous BSCF as a function of sintering temperature were investigated. It was found that the cubic perovskite structure could be formed after calcination at 800 ℃ for 2 h, but not well crystallized as seen from some unknown phases, and the pure cubic perovskite structure was formed after calcination at 1150 ℃ for 2 h. The panicle size of BSCF was less than 1-2 μm. The shrinkage of the porous BSCF increased with sintering temperature, but the opposite was true for the porosity. After sintering at 1100 ℃ for 4 h, the porous BSCF was still in an appropriate structure, with porosity of 29% and electrical conductivity above 400 S·cm^-1.
文摘Ba\-\{0.5\}Sr\-\{0.5\}Co\-\{0.8\}Fe\-\{0.2\}O\-\{3-\%δ\%\} and Ba\-\{0.5\}Sr\-\{0.5\}Co\-\{0.8\}Ti\-\{0.2\}O\-\{3-\%δ\%\} oxides were synthesized by a combined EDTA\|citrate complexing method. The catalytic behavior of these two oxides with the perovskite structure was studied during the reaction of methane oxidation. The pre\|treatment with methane has different effect on the catalytic activities of both the oxides. The methane pre\|treatment has not resulted in the change of the catalytic activity of BSCFO owing to its excellent reversibility of the perovskite structure resulting from the excellent synergistic interaction between Co and Fe in the oxide. However, the substitution with Ti on Fe\|site in the lattice makes the methane pre\|treatment have an obvious influence on the activity of the formed BSCTO oxide.
文摘通过甘氨酸硝酸盐法（GNP）合成了钙钛矿型Ba0.5Sr0.5Co0.8Fe0.2O3-δ（BSCF）复合氧化物粉体。经压制、烧结后,得到了BSCF烧结体试样,还通过硝酸溶液浸蚀处理对烧结体试样进行了表面浸蚀处理。采用X射线衍射仪（XRD）对煅烧后的粉体进行了相成分分析;采用扫描电子显微镜（SEM）及能谱仪（EDS）对烧结体和表面浸蚀后烧结体样品的微观组织和成分进行了表征;对烧结体的致密度、电导率进行了测试分析,并在自制的氧渗透装置上测定了BSCF钙钛矿膜的透氧量,分析了温度和不同氧分压差等对膜透氧性能的影响。实验结果表明,甘氨酸-硝酸盐法所制备的前驱体粉末在900℃煅烧3 h后可获得具有单一钙钛矿结构的BSCF粉体,1100℃煅烧的BSCF烧结体的电导率在600℃时最大达到38.15 S·cm-1。其透氧量随着温度和氧分压差的升高而增大,且硝酸表面浸蚀处理后,BSCF膜片的透氧性能有明显提高,透氧速率提高1.6~4.5倍。850℃,20%O2-80%N2混合气体/He条件下,浸蚀后的透氧膜片的透氧量达到2.36 m L/cm2·min,而未浸蚀透氧膜片的透氧量仅为1.36 m L/cm2·min。
