A series of aluminates were successfully synthesized via hydrothermal precipitated method, followed by solid state reaction at high temperature. The optimum condition to synthesize Sr3Al2O6 was determined by adjusting...A series of aluminates were successfully synthesized via hydrothermal precipitated method, followed by solid state reaction at high temperature. The optimum condition to synthesize Sr3Al2O6 was determined by adjusting the pH value of the solutions. The as prepared Sr3Al2O6 with lattice constant a=1.58556nm were characterized by X ray diffraction (XRD) and photoluminescence spectroscopy (PLS). In PL spectrum, a strongest peak at 655nm is observed, which is corresponding to red light, with an excitation wavelength of 459nm.展开更多
Nanoparticles of red long afterglow phosphor Sr3Al2O6: Eu2+ were prepared by microwave irradiation method at a power of 680 W and a processing time of 15 min. The phosphors nanoparticles were characterized by X-ray di...Nanoparticles of red long afterglow phosphor Sr3Al2O6: Eu2+ were prepared by microwave irradiation method at a power of 680 W and a processing time of 15 min. The phosphors nanoparticles were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Fluorescence spectrophotometer techniques. The results reveal that the samples are composed of single Sr3Al2O6 phase. The resultant nanoparticles show small size (80?100 nm) and spherical shape. The excitation and emission spectra indicate that excitation broad band chiefly lies in visible range and the nanoparticles emit much strong light at 612 nm under around 473 nm excitation. And the long afterglow phosphorescence of Sr3Al2O6 doped with Eu2+ was observed in the dark with naked eye after the removal of the excitation light. The effect of Eu2+ doping concentrations of the samples on the emission intensity is studied systematically. Furthermore, the microwave method requires a very short heating-time and the energy consumption.展开更多
Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_...Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.展开更多
文摘为研究稀土发光纳米晶的微观结构和形貌对发光性能的影响,用凝胶-微波干燥法和凝胶-烘箱干燥法制备了花状形貌的Sr3Al2O6晶体.研究了微波干燥和烘箱干燥两种不同的干燥方式对溶胶-凝胶法制备的Sr3Al2O6∶Eu2+发光粉体粒径、形貌、团聚程度、干燥时间及发光性能等的影响,结果表明采用微波干燥不仅可以大大缩短干燥所需时间,而且有利于减弱Sr3Al2O6∶Eu2+发光粉料的团聚和团聚程度,制得了颗粒分散均匀、团聚程度低、发光强度高的Sr3Al2O6∶Eu2+花状形貌粉体.研究了Sr3Al2O6∶Eu2+发光粉体的新型形貌对发光性能的影响,微波干燥法制备的均匀分散的花状形貌发光粉体发光强度高,余辉时间长达20 min.
文摘A series of aluminates were successfully synthesized via hydrothermal precipitated method, followed by solid state reaction at high temperature. The optimum condition to synthesize Sr3Al2O6 was determined by adjusting the pH value of the solutions. The as prepared Sr3Al2O6 with lattice constant a=1.58556nm were characterized by X ray diffraction (XRD) and photoluminescence spectroscopy (PLS). In PL spectrum, a strongest peak at 655nm is observed, which is corresponding to red light, with an excitation wavelength of 459nm.
基金Project (50072014) supported by the National Natural Science Foundation of China
文摘Nanoparticles of red long afterglow phosphor Sr3Al2O6: Eu2+ were prepared by microwave irradiation method at a power of 680 W and a processing time of 15 min. The phosphors nanoparticles were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Fluorescence spectrophotometer techniques. The results reveal that the samples are composed of single Sr3Al2O6 phase. The resultant nanoparticles show small size (80?100 nm) and spherical shape. The excitation and emission spectra indicate that excitation broad band chiefly lies in visible range and the nanoparticles emit much strong light at 612 nm under around 473 nm excitation. And the long afterglow phosphorescence of Sr3Al2O6 doped with Eu2+ was observed in the dark with naked eye after the removal of the excitation light. The effect of Eu2+ doping concentrations of the samples on the emission intensity is studied systematically. Furthermore, the microwave method requires a very short heating-time and the energy consumption.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572033,51572241,61774019,61704153,and 11404029)the Fund of State Key Laboratory of IPOC(BUPT)+1 种基金the Open Fund of IPOC(BUPT)Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
文摘Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.
