Red phosphors, Li2Sr0.996 Si O4： Pr3＋0.004, with different hydrothermal conditions were prepared via hydrothermal synthesis and then heat-treatment. The chemical structures of the phosphors were identified with X-ra...Red phosphors, Li2Sr0.996 Si O4： Pr3＋0.004, with different hydrothermal conditions were prepared via hydrothermal synthesis and then heat-treatment. The chemical structures of the phosphors were identified with X-ray diffraction（XRD）. Surface morphological features were observed by scanning electron microscopic（SEM） investigation. Spectra of excitation and emission for the phosphors were also obtained by a spectrophotometer. Results showed that the optimum conditions were as follows： p H value of solution was 1–2, reaction temperature was at 180 oC for 24 h. The as-prepared phosphors exhibited two excitation dominant peaks at 451 and 486 nm, attributed to transitions of 3H4→3P2 and 3H4→3P0 of Pr3＋, respectively. A narrow emission peak at 610 nm corresponded to the energy level transition of 3P0→3H6 of Pr3＋ under excitation of light at 451 nm, which indicated promising candidate red phosphors for blue LED chips.展开更多
Sr3SiO5:Eu2+ yellow phosphors for white LEDs were synthesized by high temperature solid state reaction method under a reductive atmosphere. The crystalline phases were examined with X-ray diffraction (XRD). Luminescen...Sr3SiO5:Eu2+ yellow phosphors for white LEDs were synthesized by high temperature solid state reaction method under a reductive atmosphere. The crystalline phases were examined with X-ray diffraction (XRD). Luminescence properties were studied, and effects of various fluxing agents BaCl2, MgF2, CaF2 and BaF2 on the emission spectra were also studied. The optimal Eu2+ concentration and flux were determined. Sr3SiO5: Eu2+ was obtained by firing the sample on optimal composition and fabrication process. The sa...展开更多
Pulling growth technique serves as a popular method to grow congruent melting single crystals with multiscale sizes ranging from micrometers to centimeters.In order to obtain high quality single crystals,the crystal c...Pulling growth technique serves as a popular method to grow congruent melting single crystals with multiscale sizes ranging from micrometers to centimeters.In order to obtain high quality single crystals,the crystal constituents would be arranged at the lattice sites by precisely controlling the crystal growth process.Growing interface is the position where the phase transition of crystal constituents occurs during pulling growth process.The precise control of energy at the growing interface becomes a key technique in pulling growth.In this work,we review some recent advances of pulling technique towards rare earth single crystal growth.In Czochralski pulling growth,the optimized growth parameters were designed for rare earth ions doped Y_3Al_5O_(12)and Ce:(Lu_(1-x)Y_x)_2Si O_5on the basis of anisotropic chemical bonding and isotropic mass transfer calculations at the growing interface.The fast growth of high quality rare earth single crystals is realized by controlling crystallization thermodynamics and kinetics in different size zones.On the other hand,the micro pulling down technique can be used for high throughput screening novel rare earth optical crystals.The growth interface control is realized by improving the crucible bottom and temperature field,which favors the growth of rare earth crystal fibers.The rare earth laser crystal fiber can serve as another kind of laser gain medium between conventional bulk single crystal and glass fiber.The future work on pulling technique might focus on the mass production of rare earth single crystals with extreme size and with the size near that of devices.展开更多
基金Project supported by the Fujian Provincial Key Project(2013H6020)
文摘Red phosphors, Li2Sr0.996 Si O4： Pr3＋0.004, with different hydrothermal conditions were prepared via hydrothermal synthesis and then heat-treatment. The chemical structures of the phosphors were identified with X-ray diffraction（XRD）. Surface morphological features were observed by scanning electron microscopic（SEM） investigation. Spectra of excitation and emission for the phosphors were also obtained by a spectrophotometer. Results showed that the optimum conditions were as follows： p H value of solution was 1–2, reaction temperature was at 180 oC for 24 h. The as-prepared phosphors exhibited two excitation dominant peaks at 451 and 486 nm, attributed to transitions of 3H4→3P2 and 3H4→3P0 of Pr3＋, respectively. A narrow emission peak at 610 nm corresponded to the energy level transition of 3P0→3H6 of Pr3＋ under excitation of light at 451 nm, which indicated promising candidate red phosphors for blue LED chips.
基金Project Supported by the Jilin Province Science and Technology Development Projects (20090348 and 20080511)
文摘Sr3SiO5:Eu2+ yellow phosphors for white LEDs were synthesized by high temperature solid state reaction method under a reductive atmosphere. The crystalline phases were examined with X-ray diffraction (XRD). Luminescence properties were studied, and effects of various fluxing agents BaCl2, MgF2, CaF2 and BaF2 on the emission spectra were also studied. The optimal Eu2+ concentration and flux were determined. Sr3SiO5: Eu2+ was obtained by firing the sample on optimal composition and fabrication process. The sa...
基金supported by Jilin Province Science and Technology Development Project(Grant No.21521092JH)
文摘Pulling growth technique serves as a popular method to grow congruent melting single crystals with multiscale sizes ranging from micrometers to centimeters.In order to obtain high quality single crystals,the crystal constituents would be arranged at the lattice sites by precisely controlling the crystal growth process.Growing interface is the position where the phase transition of crystal constituents occurs during pulling growth process.The precise control of energy at the growing interface becomes a key technique in pulling growth.In this work,we review some recent advances of pulling technique towards rare earth single crystal growth.In Czochralski pulling growth,the optimized growth parameters were designed for rare earth ions doped Y_3Al_5O_(12)and Ce:(Lu_(1-x)Y_x)_2Si O_5on the basis of anisotropic chemical bonding and isotropic mass transfer calculations at the growing interface.The fast growth of high quality rare earth single crystals is realized by controlling crystallization thermodynamics and kinetics in different size zones.On the other hand,the micro pulling down technique can be used for high throughput screening novel rare earth optical crystals.The growth interface control is realized by improving the crucible bottom and temperature field,which favors the growth of rare earth crystal fibers.The rare earth laser crystal fiber can serve as another kind of laser gain medium between conventional bulk single crystal and glass fiber.The future work on pulling technique might focus on the mass production of rare earth single crystals with extreme size and with the size near that of devices.
