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Preparation and properties of SrBi_(2.2) Ta_2O_9 thin film
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作者 王文 贾德昌 周玉 《Journal of Central South University of Technology》 EI 2005年第4期376-379,共4页
SrBi2.2 Ta2O9(SBT) thin film with thickness of 2μm was successfully prepared by sol-gel method, using strontium acetate semihydrate [Sr(CH3COO)2·1/2H2O] and bismth subnitrate [BiO(NO3)], and tantalum ethox... SrBi2.2 Ta2O9(SBT) thin film with thickness of 2μm was successfully prepared by sol-gel method, using strontium acetate semihydrate [Sr(CH3COO)2·1/2H2O] and bismth subnitrate [BiO(NO3)], and tantalum ethoxide [Ta(OCH2CH3)5] as source materials, glacial acetic and ethylene glycol as solvents. The X-ray diffraction(XRD) and transmission electron microscope(TEM) results indicate that SBT layer-perovskite phase obtained has to be single phase, SBT thin film is formed after being annealed at 800℃ for 1min. The typical hysteresis loop of SBT thin film on Pt/Ti/SiO2/Si is obtained, and the measured polarization value of the SBT thin film is 4.2μC/cm2. 展开更多
关键词 srbi2.2 Ta2O9 sol-gel technique thin film FERROELECTRIC
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