The electronic structure,including band structure,density of states （DOS）, and partial density of states of SrTi1-xSbxO3 with x = 0,0. 125,0.25,and 0.33 is calculated from the first principles of plane wave ultra-so...The electronic structure,including band structure,density of states （DOS）, and partial density of states of SrTi1-xSbxO3 with x = 0,0. 125,0.25,and 0.33 is calculated from the first principles of plane wave ultra-soft pseudo-potential technology based on density function theory. The calculated results reveal that due to the electron doping,the Fermi level moves into the conduction bands for SrTi1-xSbxO3 with x = 0. 125 and the system shows metallic behavior. In addition, the DOS moves towards low energy and the optical band gap is broadened. The wide band gap and the low density of the states in the conduction band result in the transparency of the films.展开更多
The SrTiO3 ： Pr^3＋ material, co-doped with monovalent Li^＋ , divalent Mg^2＋ , and trivalent Al^3＋ was prepared by a new sol-gel method. The phase and crystallinity of the synthesized materials were investigated b...The SrTiO3 ： Pr^3＋ material, co-doped with monovalent Li^＋ , divalent Mg^2＋ , and trivalent Al^3＋ was prepared by a new sol-gel method. The phase and crystallinity of the synthesized materials were investigated by powder X-ray diffraction（XRD） and scanning electron microcopy（SEM）. Among the co-doped ion, Al^3＋ incorporation caused the least lattice change and had the best crystallinity. Photoluminescence spectra were taken to investigate the luminescence characteristics. We observed a red luminescence change of SrTiO3 ： Pr^3＋ after being co-doped, and a best enhancement on the red luminescence with the trivalent Al^3＋ was observed. The present results indicated that the charge defect associated with Al^3＋ has led to charge compensation of Pr^＋ and also implied that the charge defects（usually the second dopant ions replacing the A or B sites in the lattice） which are closer to PrSr^＋ contribute more to the red luminescence enhancement.展开更多
We report the Meissner effect studies on an Fe Se thin film grown on Nb-doped Sr Ti O3 substrate by molecular beam epitaxy. Two-coil mutual inductance measurement clearly demonstrates the onset of diamagnetic screenin...We report the Meissner effect studies on an Fe Se thin film grown on Nb-doped Sr Ti O3 substrate by molecular beam epitaxy. Two-coil mutual inductance measurement clearly demonstrates the onset of diamagnetic screening at 65 K, which is consistent with the gap opening temperature determined by previous angle-resolved photoemission spectroscopy results. The applied magnetic field causes a broadening of the superconducting transition near the onset temperature, which is the typical behavior for quasi-two-dimensional superconductors. Our results provide direct evidence that Fe Se thin film grown on Nb-doped Sr Ti O3 substrate has an onset TC* 65 K,which is the highest among all iron-based superconductors discovered so far.展开更多
High quality chromium （Cr） doped three-dimensional topological insulator （TI） Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3 （111） substrates. We report that the Dirac surfac...High quality chromium （Cr） doped three-dimensional topological insulator （TI） Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3 （111） substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2 xCrxTe3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors （DMSs）, here the coercivity field is not significantly changed with decreasing cartier density. Carrier-independent ferromag- netism heralds Sbz_xCrxTe3 films as the base candidate TI material to realize the quantum anomalous Hall （QAH） effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.展开更多
文摘The electronic structure,including band structure,density of states （DOS）, and partial density of states of SrTi1-xSbxO3 with x = 0,0. 125,0.25,and 0.33 is calculated from the first principles of plane wave ultra-soft pseudo-potential technology based on density function theory. The calculated results reveal that due to the electron doping,the Fermi level moves into the conduction bands for SrTi1-xSbxO3 with x = 0. 125 and the system shows metallic behavior. In addition, the DOS moves towards low energy and the optical band gap is broadened. The wide band gap and the low density of the states in the conduction band result in the transparency of the films.
基金The Natural Science Foundation of Shaan'xi Province(2005F06)
文摘The SrTiO3 ： Pr^3＋ material, co-doped with monovalent Li^＋ , divalent Mg^2＋ , and trivalent Al^3＋ was prepared by a new sol-gel method. The phase and crystallinity of the synthesized materials were investigated by powder X-ray diffraction（XRD） and scanning electron microcopy（SEM）. Among the co-doped ion, Al^3＋ incorporation caused the least lattice change and had the best crystallinity. Photoluminescence spectra were taken to investigate the luminescence characteristics. We observed a red luminescence change of SrTiO3 ： Pr^3＋ after being co-doped, and a best enhancement on the red luminescence with the trivalent Al^3＋ was observed. The present results indicated that the charge defect associated with Al^3＋ has led to charge compensation of Pr^＋ and also implied that the charge defects（usually the second dopant ions replacing the A or B sites in the lattice） which are closer to PrSr^＋ contribute more to the red luminescence enhancement.
基金supported by the National Natural Science Foundation and Ministry of Science and Technology of China(2015CB921000 and 2012CB921402)Yihua Wang is partially supported by the Urbanek Fellowship of the Department of Applied Physics at Stanford UniversityK.A.Moler is supported by the Department of Energy,Office of Science,Basic Energy Sciences,Materials Sciences and Engineering Division,under Contract DEAC02-76SF00515
文摘We report the Meissner effect studies on an Fe Se thin film grown on Nb-doped Sr Ti O3 substrate by molecular beam epitaxy. Two-coil mutual inductance measurement clearly demonstrates the onset of diamagnetic screening at 65 K, which is consistent with the gap opening temperature determined by previous angle-resolved photoemission spectroscopy results. The applied magnetic field causes a broadening of the superconducting transition near the onset temperature, which is the typical behavior for quasi-two-dimensional superconductors. Our results provide direct evidence that Fe Se thin film grown on Nb-doped Sr Ti O3 substrate has an onset TC* 65 K,which is the highest among all iron-based superconductors discovered so far.
基金the National Natural Science Foundation of China(Grant No.11174343)the Ministry of Science and Technology of Chinathe Chinese Academy of Sciences
文摘High quality chromium （Cr） doped three-dimensional topological insulator （TI） Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3 （111） substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2 xCrxTe3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors （DMSs）, here the coercivity field is not significantly changed with decreasing cartier density. Carrier-independent ferromag- netism heralds Sbz_xCrxTe3 films as the base candidate TI material to realize the quantum anomalous Hall （QAH） effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.
