The effects of rare-earth La_2O_3 addition on microstructures and electrical properties of SrTiO_3 ceramics were investigated. Semiconductor SrTiO_3-based voltage-sensing and dielectric dual functional ceramics was pr...The effects of rare-earth La_2O_3 addition on microstructures and electrical properties of SrTiO_3 ceramics were investigated. Semiconductor SrTiO_3-based voltage-sensing and dielectric dual functional ceramics was prepared by a single step sintering technology in this study, and the effects of the content of La_2O_3 on characteristics of the product were discussed in terms of microstructures and electrical properties of materials. The results show that SrTiO_3-based ceramics doped with La_2O_3 exhibits more homogeneous grain distribution, greater grain size, and excellent voltage sensing and dielectric characteristics than those without La_2O_3 doping. The samples doped with 1 1% La_2O_3 were sintered at 1420 ℃ in N_2+C weak reducing atmosphere. The average grain size of the samples doped with La_2O_3 is 40 μm, the breakdown voltage of 19.7 V·mm^(-1), the nonlinear exponent of 7.2, and dielectric constant of 22500. The results reveal that final products are suitable to use in low operating voltage.展开更多
基金Project supported by Science and Technology Foundation of Yunnan Province (2002GG-09)
文摘The effects of rare-earth La_2O_3 addition on microstructures and electrical properties of SrTiO_3 ceramics were investigated. Semiconductor SrTiO_3-based voltage-sensing and dielectric dual functional ceramics was prepared by a single step sintering technology in this study, and the effects of the content of La_2O_3 on characteristics of the product were discussed in terms of microstructures and electrical properties of materials. The results show that SrTiO_3-based ceramics doped with La_2O_3 exhibits more homogeneous grain distribution, greater grain size, and excellent voltage sensing and dielectric characteristics than those without La_2O_3 doping. The samples doped with 1 1% La_2O_3 were sintered at 1420 ℃ in N_2+C weak reducing atmosphere. The average grain size of the samples doped with La_2O_3 is 40 μm, the breakdown voltage of 19.7 V·mm^(-1), the nonlinear exponent of 7.2, and dielectric constant of 22500. The results reveal that final products are suitable to use in low operating voltage.
