Common Electronic Features and Electronic Nematicity in Parent Compounds of Iron-Based Superconductors and FeSe/SrTiO_3 Films Revealed by Angle-Resolved Photoemission Spectroscopy

We report comprehensive angle-resolved photoemission investigations on the electronic structures and nematicity of the parent compounds of the iron-based superconductors including CeFeAsO, BaFe2As2, NaFeAs, FeSe and undoped FeSe/SrTiO3 films with 1, 2 and 20 layers. While the electronic structure near tile Brillouin zone center F varies dramatically among different materials, the electronic structure near the Brillouin zone corners （M points）, as well as their temperature dependence, are rather similar. The electronic structure near the zone corners is dominated by the electronic nematicity that gives rise to a band splitting of the dxz and dyz bands below the nematie transition temperature. A clear relation is observed between the band splitting magnitude arid the onset temperature of nematicity. Our results may shed light on the origin of nematicity, its effect on the electronic structures, and its relation with superconductivity in the iron-based superconductors.

Structure,ferroelectric,and enhanced fatigue properties of sol–gel-processed new Bi-based perovskite thin films of Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)

Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties.New Bi-based perovskite thin films Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)(BCT–PT) are deposited on Pt(111)/Ti/SiO_(2)/Si substrates in the present study by the traditional sol–gel method.Their structures and related ferroelectric and fatigue characteristics are studied in-depth.The BCT–PT thin films exhibit good crystallization within the phase-pure perovskite structure,besides,they have a predominant(100) orientation together with a dense and homogeneous microstructure.The remnant polarization(2P_(r)) values at 30 μC/cm^(2) and 16 μC/cm^(2) are observed in 0.1BCT–0.9PT and 0.2BCT–0.8PT thin films,respectively.More intriguingly,although the polarization values are not so high,0.2BCT–0.8PT thin films show outstanding polarization fatigue properties,with a high switchable polarization of 93.6% of the starting values after 10^(8) cycles,indicating promising applications in ferroelectric memories.

Preparation,Characterization and Photothermal Study of PVA/Ti_(2)O_(3) Composite Films

In this work,flexible photothermal PVA/Ti_(2)O_(3) composite films with different amount(0 wt%,5 wt%,10 wt%,15 wt%)of Ti_(2)O_(3) particles modified by steric acid were prepared by a simple solution casting method.The microstructures,XRD patterns,FTIR spectra,UV-Vis-NIR spectra thermo-conductivity,thermo-stability and photothermal effects of these composite films were all characterized.These results indicated that Ti_(2)O_(3) particles were well dispersed throughout the polyvinyl alcohol(PVA)matrix in the PVA/Ti_(2)O_(3) composite films.And Ti_(2)O_(3) particles could also effectively improve the photothermal properties of the composite films which exhibited high light absorption and generated a high temperature(about 57.4℃for film with 15 wt%Ti_(2)O_(3) amount)on the surface when it was irradiated by a simulated sunlight source(1 kW/m^(2)).

Identifying the enhancement mechanism of Al/MoO_(3) reactive multilayered films on the ignition ability of semiconductor bridge using a one-dimensional gas-solid two-phase flow model

Energetic Semiconductor bridge(ESCB)based on reactive multilayered films(RMFs)has a promising application in the miniature and intelligence of initiator and pyrotechnics device.Understanding the ignition enhancement mechanism of RMFs on semiconductor bridge(SCB)during the ignition process is crucial for the engineering and practical application of advanced initiator and pyrotechnics devices.In this study,a one-dimensional(1D)gas-solid two-phase flow ignition model was established to study the ignition process of ESCB to charge particles based on the reactivity of Al/MoO_(3) RMFs.In order to fully consider the coupled exothermic between the RMFs and the SCB plasma during the ignition process,the heat release of chemical reaction in RMFs was used as an internal heat source in this model.It is found that the exothermal reaction in RMFs improved the ignition performance of SCB.In the process of plasma rapid condensation with heat release,the product of RMFs enhanced the heat transfer process between the gas phase and the solid charge particle,which accelerated the expansion of hot plasma,and heated the solid charge particle as well as gas phase region with low temperature.In addition,it made up for pressure loss in the gas phase.During the plasma dissipation process,the exothermal chemical reaction in RMFs acted as the main heating source to heat the charge particle,making the surface temperature of the charge particle,gas pressure,and gas temperature rise continuously.This result may yield significant advantages in providing a universal ignition model for miniaturized ignition devices.

Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS

We report the performances of a chalcopyrite Cu(In, Ga)Se2 CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In2S3, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In2S3/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.

Dielectric and Structural Properties of SrTiO_3 Thin Films Grown by Laser Molecular Beam Epitaxy

Here I will review recent progress on the study of dielectric SrTiO3 （STO） thin films. In our work, laser molecular beam epitaxy has been used to prepare multilayer heterostructures consisting of dielectric STO and high temperature superconducting YBa2Cu3Oy （YBCO） thin films for tunable applications. Since the tunability of the dielectric constant and dielectric loss of STO are the key parameters determining the performance of tunable devices and hence the feasibility of this technology, the correlations between the deposition parameters of STO thin films, their structural characteristics, and dielectric properties were studied. An enhanced tunability of 74.7%, comparable to that of STO single-crystal, was observed in our grown STO thin films suitable for tunable YBCO applications. On the other hand, we have grown epitaxial STO （110） films on Si without any buffer layer. The nature of epitaxial growth and interfacial structures of the grown films were examined by various techniques, such as Laue diffraction, high-resolution transmission electron microscopy （HRTEM） and x-ray photoelectron spectroscopy. The in-plane alignments for the STO （110） films grown directly on Si （100） was found as STO//Si and STO//Si . HRTEM study has showed a crystalline transition across the STO/Si interface, indicating it is free from any amorphous oxide layer. We provide clear evidence that the interface mainly consists of Sr silicate phase. The results suggest that such Sr silicate interfacial layer exhibits favourable structural and chemical properties that are particularly useful for epitaxial STO （110） growth on Si. Such STO thin films will be useful for practical applications.

Bipolar Resistive Switching in Epitaxial Mn_3O_4 Thin Films on Nb-Doped SrTiO_3 Substrates

Spinel （O01）-orientated Mn304 thin films on Nb-doped SrTi03 （001） substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial fihn is well crystaiHzed. In the film plane the orientation relationship between the film and the substrate is [lOOjMn3 04 ｜｜[110] Nb-doped SrTiO3. After an electroforming process, the film shows bipolar nonvolatile resistance switching behavior. The positive voltage bias drives the sample into a low resistance state, while the negative voltage switches it back to a high resistance state. The switching polarity is different from the previous studies. The complex impedance measurement suggests that the resistance switching behavior is of filament type. Due to the performance reproducibility and state stability, Mn3O4 might be a promising candidate for the resistive random access memory devices.

Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO_3 thin films

The alternation from bipolar to unipolar resistive switching is observed in perovskite La0.01Sr0.99TiO3 thin films. These two switching modes can be activated separately depending on the compliance current （Icomp） during the electroforming process： with a higher Icomp （5 mA） the unipolar resistance switching behavior is measured, while the bipolar resistance switching behavior is observed with a lower Icomp （1 mA）. On the basis of I–V characteristics, the switching mechanisms for the URS and BRS modes are considered as being a change in the Schottky-like barrier height and/or width at the Pt/La-SrTiO3 interface and the formation and disruption of conduction filaments, respectively.

High-Quality FeTe_(1-x)Se_x Monolayer Films on SrTiO_3(001) Substrates Grown by Molecular Beam Epitaxy

We report the growth process of FeTe1-xSex （0 〈 x 〈 1） monolayer films on SrTi03 （STO） substrates through molecular beam epitaxy and discuss the possible ways to improve the film quality. By exploring the parameters of substrate treatment, growth control and post growth annealing, we successfully obtain a series of FeTe1-xSex monolayer films. In the whole growth process, we find the significance of the temperature control through surface roughness monitored by the reflection high-energy electron diffraction and scanning tunneling microscopy. We obtain the best quality of FeSe monolayer films with the STO substrate treated at T = 900 950℃ before growth, the FeSe deposited at T = 310℃ during growth and annealed at T = 380℃ after growth. For FeTe1-xSex （x-1）, both the growth temperature and annealing temperature decrease to T=260℃. According to the angle- resolved photoemission spectroscopy measurements, the superconductivity of the FeTe1-xSex film is robust and insensitive to Se concentration. All the above are instructive for further investigations of the superconductivity in FeTe1-xSex films.

Centimeter-sized Cs_(3)Cu_(2)I_(5)single crystals grown by oleic acid assisted inverse temperature crystallization strategy and their films for high-quality X-ray imaging

Low-dimensional halide perovskites have become the most promising candidates for X-ray imaging,yet the issues of the poor chemical stability of hybrid halide perovskite,the high poisonousness of lead halides and the relatively low detectivity of the lead-free halide perovskites which seriously restrain its commercialization.Here,we developed a solution inverse temperature crystal growth(ITCG)method to bring-up high quality Cs_(3)Cu_(2)I_(5)crystals with large size of centimeter order,in which the oleic acid(OA)is introduced as an antioxidative ligand to inhibit the oxidation of cuprous ions effieiently,as well as to decelerate the crystallization rate remarkalby.Based on these fine crystals,the vapor deposition technique is empolyed to prepare high quality Cs_(3)Cu_(2)I_(5)films for efficient X-ray imaging.Smooth surface morphology,high light yields and short decay time endow the Cs_(3)Cu_(2)I_(5)films with strong radioluminescence,high resolution(12 lp/mm),low detection limits(53 nGyair/s)and desirable stability.Subsequently,the Cs_(3)Cu_(2)I_(5)films have been applied to the practical radiography which exhibit superior X-ray imaging performance.Our work provides a paradigm to fabricate nonpoisonous and chemically stable inorganic halide perovskite for X-ray imaging.

Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

XPS Study of Electroless Deposited Sb2Se3 Thin Films for Solar Cell Absorber Material

As a thin film solar cell absorber material, antimony selenide (Sb2Se3) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb2Se3 thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.

Thickness effect on solar-blind photoelectric properties of ultrathinβ-Ga_(2)O_(3)films prepared by atomic layer deposition

Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better crystal quality,which is verified from x-ray diffraction(XRD)and scanning electron microscope(SEM)results.The Ga_(2)O_(3)-based solar blind photodetectors with different thicknesses are fabricated and studied.The experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film thickness.The photodetectors with inter-fingered structure based on 900 growth cyclesβ-Ga_(2)O_(3)active layers(corresponding film thickness of 58 nm)exhibit the best performances including a low dark current of 134 fA,photo-to-dark current ratio of 1.5×10^(7),photoresponsivity of 1.56 A/W,detectivity of 2.77×10^(14)Jones,and external quantum efficiency of 764.49%at a bias voltage of 10 V under 254-nm DUV illumination.The photoresponse rejection ratio(R_(254)/R_(365))is up to 1.86×10^(5).In addition,we find that the photoelectric characteristics also depend on the finger spacing of the MSM structure.As the finger spacing decreases from 50μm to10μW,the photoresponsivity,detectivity,and external quantum efficiency increase significantly.

Depth Profile Study of Electroless Deposited Sb2S3 Thin Films Using XPS for Photovoltaic Applications

Sb2S3 has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The stoichiometry and composition of electroless Sb2S3 thin films were analyzed using XPS depth profile studies. The surface layers were found nearly stoichiometric. On the other hand, the inner layer was rich in antimony composition making it more conductive electrically.

Investigation of Sprayed Lu2O3 Thin Films Using XPS

Spray pyrolysis method was used to deposit Lutetium Oxide (Lu2O3) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried out in argon atmosphere at 450°C for 60 minutes of the films. To investigate the composition and stoichiometry of sprayed as-deposited and annealed Lu2O3 thin films, depth profile studies using X-ray photoelectron spectroscopy (XPS) was done. Nearly stoichiometric was observed for both annealed and as-deposited films in inner and surface layers.

XPS Depth Profile Study of Sprayed Ga2O3 Thin Films

Ga2O3 thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga2O3 thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.

溶胶-凝胶法制备掺铌的SrTiO_3薄膜

采用溶胶 -凝胶法 ,用醋酸锶、钛酸丁酯、乙醇铌作为前驱体 ,用旋涂法制备掺铌钛酸锶多晶薄膜。用醋酸作为醋酸锶溶剂 ,并用丙三醇作为辅助溶剂 ,溶胶浓度及黏度均可在较大范围内调节。经 6 0 0℃热处理后薄膜转化为钙钛矿结构 ,扫描俄歇电子显微镜所做表面形貌与元素分析表明薄膜均匀、无裂纹、表面光滑、晶粒细小。

激光分子束外延SrTiO_3薄膜退火过程中表面扩散的研究

用激光分子束外延研究了SrTiO3 同质外延时原位退火中 ,反射高能电子衍射 (RHEED)强度的恢复———驰豫时间 ,导出了高真空下表面扩散的活化能为 0 31eV ,与低真空下的结果相比要小许多 ,这反映了粒子达到基片时的能量差。对沉积不同厚度的薄膜退火研究 ,表明当薄膜厚度增加时 ,表面恢复情况减弱 ,而导致随后的沉积时RHEED振荡周期的改变。

不同晶向SrTiO_3上外延GaAs薄膜的光谱研究

利用MBE生长技术 ,成功地在不同晶向SrTiO3 ( 1 0 0 ) ( 1 1 1 ) ( 1 1 0 )衬底上生长了GaAs薄膜 ,利用显微Raman和荧光光谱 (PL)对此进行了研究。实验结果表明 ,在不同晶向SrTiO3 上生长的GaAs薄膜有不同的晶向和应力状态。荧光光谱 (PL)研究表明在SrTiO3 ( 1 0 0 ) ( 1 1 1 )晶面上生长的GaAs薄膜的PL峰发生明显的蓝移。研究表明在SrTiO3 ( 1 1 0 )面上生长的GaAs薄膜和体单晶基本上一致 ,有更好的光学质量。

0.9BaTiO_(3)-0.1Bi(Mg_(1/2)Ti_(1/2))O_(3)铁电薄膜制备及储能特性

电介质薄膜是通过介质极化方式存储静电能的一种材料,以其高功率密度和高充放电效率,在电子器件领域得到广泛应用。目前,储能密度较低和温度稳定性差仍是电介质储能薄膜的缺陷。本研究采用溶胶-凝胶法在Pt/Ti/SiO_(2)/Si衬底上制备了0.9BaTiO_(3)-0.1Bi(Ti_(1/2)Mg_(1/2))O_(3)(0.9BT-0.1BMT)薄膜,通过引入BMT期望获得高储能密度及宽温度稳定性,并研究了退火温度对薄膜的相组成和微观形貌的影响。研究结果表明,退火温度过高会导致薄膜的致密性明显降低并伴随晶粒尺寸增大,750℃是最佳的退火温度。综合性能研究发现,1 kHz下,薄膜的室温介电常数为399,介电损耗为5.8%。薄膜在各测试频率下的介电温度稳定性满足X9R标准,ΔC/C25℃≤±13.9%。通过Currie-Weiss关系计算得到薄膜的弛豫系数(Relaxor value)γ值为≈1.96,说明其具有明显的弛豫特性。储能特性研究显示,薄膜的室温储能密度Wrec达51.9 J/cm^(3),室温~200℃的宽温度范围内,储能密度Wrec>20 J/cm^(3),可释放能量效率η>65%(1600 kV/cm)。在脉冲放电测试中,薄膜的脉冲放电时间τ0.9保持在15μs以内,且具有优异的频率、温度和循环可靠性。本研究所制备的0.9BT-0.1BMT铁电薄膜具有出色的储能特性和宽温度稳定性,具备在高温环境中应用的潜力。