In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along wit...In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.展开更多
In aircraft assembly, interlayer burr formation in dry drilling of stacked metal materials is a common problem. Traditional manual deburring operation seriously affects the assembly qual- ity and assembly efficiency, ...In aircraft assembly, interlayer burr formation in dry drilling of stacked metal materials is a common problem. Traditional manual deburring operation seriously affects the assembly qual- ity and assembly efficiency, is time-consuming and costly, and is not conducive to aircraft automatic assembly based on industrial robot. In this paper, the formation of drilling exit burr and the influ- ence of interlayer gap on interlayer burr formation were studied, and the mechanism of interlayer gap formation in drilling stacked aluminum alloy plates was investigated, a simplified mathematical model of interlayer gap based on the theory of plates and shells and finite element method was established. The relationship between interlayer gap and interlayer burr, as well as the effect of feed rate and pressing force on interlayer burr height and interlayer gap was discussed. The result shows that theoretical interlayer gap has a positive correlation with interlayer burr height and preloading nressing force is an effective method to control interlaver burr formation.展开更多
文摘In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.
基金the financial support of the Aeronautical Science Foundation of China(Nos.2013ZE52067,2014ZE52057)
文摘In aircraft assembly, interlayer burr formation in dry drilling of stacked metal materials is a common problem. Traditional manual deburring operation seriously affects the assembly qual- ity and assembly efficiency, is time-consuming and costly, and is not conducive to aircraft automatic assembly based on industrial robot. In this paper, the formation of drilling exit burr and the influ- ence of interlayer gap on interlayer burr formation were studied, and the mechanism of interlayer gap formation in drilling stacked aluminum alloy plates was investigated, a simplified mathematical model of interlayer gap based on the theory of plates and shells and finite element method was established. The relationship between interlayer gap and interlayer burr, as well as the effect of feed rate and pressing force on interlayer burr height and interlayer gap was discussed. The result shows that theoretical interlayer gap has a positive correlation with interlayer burr height and preloading nressing force is an effective method to control interlaver burr formation.
