A stretch-release strategy is proposed to analyze the problem of surface energy-induced stress fields in nanocrystals,which is resolved into a stretch sub-problem and a release sub-problem using the superposition prin...A stretch-release strategy is proposed to analyze the problem of surface energy-induced stress fields in nanocrystals,which is resolved into a stretch sub-problem and a release sub-problem using the superposition principle.The surface effect of silicon nanowires with hexagonal cross-sections is analyzed by the proposed method.The severe stress concentration near the triple junctions of the wire surfaces and the large shear stress on the plane{111}is quantified,which provides a solid mechanical explanation for the kink phenomena in growth transition from direction〈111〉to〈112〉observed in experiments.Different from the conventional view of negligible surface effect for bulk material,we found that there exists a size-independent part of the surface effect on the stress in the order of tens or hundreds of mega Pascal,which corresponds to the stretch-induced biaxial stress in the surface layer and the shape influence of the geometry of nanocrystals.This size-independent part could well explain the size-independent kinking phenomenon during the growth of silicon nanowires.展开更多
基金the National Natural Science Foundation of China(Grant No.11872237)the Natural Science Foundation of Shanghai(Grant No.18ZR1414600)the Challenging Project from China Academy of Engineering Physics.
文摘A stretch-release strategy is proposed to analyze the problem of surface energy-induced stress fields in nanocrystals,which is resolved into a stretch sub-problem and a release sub-problem using the superposition principle.The surface effect of silicon nanowires with hexagonal cross-sections is analyzed by the proposed method.The severe stress concentration near the triple junctions of the wire surfaces and the large shear stress on the plane{111}is quantified,which provides a solid mechanical explanation for the kink phenomena in growth transition from direction〈111〉to〈112〉observed in experiments.Different from the conventional view of negligible surface effect for bulk material,we found that there exists a size-independent part of the surface effect on the stress in the order of tens or hundreds of mega Pascal,which corresponds to the stretch-induced biaxial stress in the surface layer and the shape influence of the geometry of nanocrystals.This size-independent part could well explain the size-independent kinking phenomenon during the growth of silicon nanowires.
