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The Dislocation Sub-structure Evolution during Hot Compressive Deformation of Ti-6Al-2Zr-1Mo-1V Alloy at 800℃
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作者 刘勇 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2009年第2期202-205,共4页
Hot compressive behaviors of Ti-6Al-2Zr-1Mo-1V alloy at 800℃, as well as the evolution of microstructure during deformation process, were investigated. The experimental results show that flow stress increases to a pe... Hot compressive behaviors of Ti-6Al-2Zr-1Mo-1V alloy at 800℃, as well as the evolution of microstructure during deformation process, were investigated. The experimental results show that flow stress increases to a peak stress followed by a decease with increasing strain, and finally forms a stable stage. Dislocations are generated at the interface of αβ phase, and the phase interface and dislocation loops play an important role in impeding the movement of dislocation. As strain increasing, micro-deformation bands with high-density dislocation are formed, and dynamic recrystallizaton occurs finally. XRD Fourier analysis reveals that dislocation density increases followed by a decrease during compressive deformation, and falls into the range from 10^10 to 10^11 cm^-2. 展开更多
关键词 Ti-6Al-2Zr-IMo-1v alloy hot compressive deformation behavior dislocation sub-structure evolution
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低压CMOS带隙基准电压源设计 被引量:1
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作者 宁江华 王基石 +1 位作者 杨发顺 丁召 《现代电子技术》 2010年第7期115-117,共3页
基准源是模拟集成电路中的基本单元之一,它在高精度ADC,DAC,SoC等电路中起着重要作用,基准源的精度直接控制着这些电路的精度。阐述一个基于带隙基准结构的Sub-1 V、低功耗、低温度系数、高电源抑制比的CMOS基准电压源。并基于CSMC 0.5... 基准源是模拟集成电路中的基本单元之一,它在高精度ADC,DAC,SoC等电路中起着重要作用,基准源的精度直接控制着这些电路的精度。阐述一个基于带隙基准结构的Sub-1 V、低功耗、低温度系数、高电源抑制比的CMOS基准电压源。并基于CSMC 0.5μm Double Poly Mix Process对电路进行了仿真,得到理想的设计结果。 展开更多
关键词 CMOS基准电压源 低功耗 sub-1v 高电源抑制比
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