Design of a 14-Bit 1 MS/s Successive Approximation Analog-to-Digital Converter

A 14-bit successive approximation analog-to-digital converter (SAR ADC) with capacitive calibration has been designed based on the SMIC. 18 μm CMOS process. The overall architecture is in fully differential form to eliminate the effect caused by common mode noise. Meanwhile, the digital-to-analog converter (DAC) is a two-stage structure, which can greatly reduce the area of the capacitor array compared with the traditional DAC structure. The capacitance calibration module is mainly divided into the mismatch voltage acquisition phase and the calibration code backfill phase, which effectively reduces the impact of the DAC mismatch on the accuracy of the SAR ADC. The design of this paper is based on cadence platform simulation verification, simulation results show that when the sampling rate is 1 MS/s, the power supply voltage is 5 V and the reference voltage is 4.096 V, the effective number of bits (ENOB) of the ADC is 13.49 bit, and the signal-to-noise ratio (SNR) is 83.3 dB.

Mismatch Calibration Techniques in Successive Approximation Analog-to-Digital Converters

Comparator offset cancellation and capacitor self-calibration techniques used in a successive approximation analog-to-digital converter （SA-ADC） are described. The calibration circuit works in parallel with the SAADC by adding additional calibration clock cycles to pursue high accuracy and low power consumption, and the calibrated resolution can be up to 14bit. This circuit is used in a 10bit 3Msps successive approximation ADC. This chip is realized with an SMIC 0. 18μm 1.8V process and occupies 0.25mm^2 . It consumes 3. 1mW when operating at 1.8MHz. The measured SINAD is 55. 9068dB, SFDR is 64. 5767dB, and THD is - 74. 8889dB when sampling a 320kHz sine wave.

Overview of Energy-Efficient Successive-Approximation Analog-to-Digital Converters: State-of-the-Art and a Design Example

This paper makes a review of state-of-the- arts designs of successive-approximation register analog-to-digital converters （SAR ADCs）. Methods and technique specifications are collected in view of innovative ideas. At the end of this paper, a design example is given to illustrate the procedure to design an SAR ADC. A new method, which extends the width of the internal clock, is also proposed to facilitate different sampling frequencies, which provides more time for the digital-to-analog convert （DAC） and comparator to settle. The 10 bit ADC is simulated in 0.13 μm CMOS process technology. The signal-to-noise and distortion ratio （SNDR） is 54.41 dB at a 10 MHz input with a 50 MS/s sampling rate, and the power is 330 μW.

A 5MS/s 12-Bit Successive Approximation Analog-to-Digital Converter

With the continuous development of science and technology, digital signal processing is more and more widely used in various fields. Among them, the analog-to-digital converter (ADC) is one of the key components to convert analog signals to digital signals. As a common type of ADC, 12-bit sequential approximation analog-to-digital converter (SAR ADC) has attracted extensive attention for its performance and application. This paper aims to conduct in-depth research and analysis of 12-bit SAR ADC to meet the growing demands of digital signal processing. This article designs a 12-bit, successive approximation analog-to-digital converter (SAR ADC) with a sampling rate of 5 MS/s. The overall circuit adopts a fully differential structure, with key modules including DAC capacitor array, comparator, and control logic. According to the DAC circuit in this paper, a fully differential capacitor DAC array structure is proposed to reduce the area of layout DAC. The comparator uses a digital dynamic comparator to improve the ADC conversion speed. The chip is designed based on the SMIC180 nm CMOS process. The simulation results show that when the sampling rate is 5 MS/s, the effective bit of SAR ADC is 11.92 bit, the SNR is 74.62 dB, and the SFDR is 89.24 dB.

Capacitor self-calibration technique used in time-interleaved successive approximation ADC

A capacitor self-calibration circuit used in a successive approximation analog-to-digital converter （SA-ADC） is presented. This capacitor self-calibration circuit can calibrate erroneous data and work with the ADC by adding an additional clock period. This circuit is used in a 10 bit 32 Msample/s time-interleaved SA- ADC. The chip is implemented with Chart 0. 25 μm 2. 5 V process and totally occupies an area of 1.4 mm× 1.3 mm. After calibration, the simulated signal-to-noise ratio （SNR） is 59. 586 1 dB and the spurious-free dynamic range （SFDR） is 70. 246 dB at 32 MHz. The measured signal-to-noise and distortion ratio （SINAD） is 44. 82 dB and the SFDR is 63. 760 4 dB when the ADC samples a 5.8 MHz sinusoid wave.

An Energy-Efficient 12b 2.56 MS/s SAR ADC Using Successive Scaling of Reference Voltages

This paper presents an energy efficient architecture for successive approximation register(SAR)analog to digital converter(ADC).SAR ADCs with a capacitor array structure have been widely used because of its simple architecture and relatively high speed.However,conventional SAR ADCs consume relatively high energy due to the large number of capacitors used in the capacitor array and their sizes scaled up along with the number of bits.The proposed architecture reduces the energy consumption as well as the capacitor size by employing a new array architecture that scales down the reference voltages instead of scaling up the capacitor sizes.The proposed 12-bit SAR ADC is implemented in Complementary Metal Oxide Semiconductor(CMOS)0.13 um library using Cadence Virtuoso design tool.Simulation results and mathematical model demonstrate the overall energy savings of up to 97.3%compared with conventional SAR ADC,67%compared with the SAR ADC with split capacitor,and 35%compared with the resistor and capacitor(R&C)Hybrid SAR ADC.The ADC achieves an effective number of bits(ENOB)of 11.27 bits and consumes 61.7 uW at sampling rate of 2.56 MS/s,offering an energy consumption of 9.8 fJ per conversion step.The proposed SAR ADC offers 95.5%reduction in chip core area compared to conventional architecture,while occupying an active area of 0.088 mm2.

一种应用于12 bit SAR ADC C-R混和式DAC

针对ADC中功耗、精度与成本之间相互制约的问题,提出一种应用于12 bitSARADC的混合电容电阻型(C-R)DAC结构。高6位采用温度计编码的电容阵列结构;低6位选择电阻阵列结构。对电路进行非线性分析选取合理的元件尺寸。另外,采用非交叠时钟电路作为开关控制时序,避免开关切换时引起瞬态毛刺导致电容电荷泄露。基于GSMC 95 nm工艺,完成电路、版图设计与仿真,并完成流片测试,DAC版图总面积为317.2μm×262.5μm,流片测试结果表明,DNL的范围为-0.38~+0.44 LSB,INL的范围为-0.73~+0.4 LSB,满足12位ADC的设计要求。

一种基于冗余位结构CDAC的12 bit SAR ADC

提出一种基于非二进制冗余位结构CDAC的12 bit全差分逐次逼近型模拟数字转换器(SAR ADC)。传统SAR ADC中CDAC的单位电容数量随位数指数增长,且采用全差分结构的电容数量是单端结构的两倍,导致CDAC建立时间过长。为此,设计一种加入冗余位的分段式电容阵列,减少单位电容数量,提高CDAC建立速度。动态比较器的比较速度快,会导致数字码误判,通过加入冗余位弥补比较器对数字码误判的缺陷;采用底板采样技术,避免沟道电荷注入和时钟馈通,提高采样精度;采用SMIC 130 nm CMOS工艺。在电源电压1.2 V、20 MS/s采样率下,对1024点FFT仿真。结果显示:当输入频率(9.824 MHz)接近奈奎斯特频率时,该ADC的整体信噪失真比(SNDR)达到72.42 dB,有效位数(ENOB)达到11.73 bit;无杂散动态范围(SFDR)达到88.4 dBc,功耗为1.29 mW。

一种6倍无源增益低OSR低功耗的二阶NS SAR ADC

针对一阶噪声整形(NS)往往需要增加功耗而以较高的过采样比(OSR)来实现较高的有效位数(ENOB),提出了一种低OSR、低功耗的二阶无源NS SAR ADC。该无源NS模块较高的无源增益可以更好地抑制比较器的噪声;其残差电压是通过开关MOS阵列复用积分电容实现采样,从而无需额外的残差采样电容,避免了残差采样电容清零和残差采样时kT/C噪声的产生,因此减小了总的kT/C噪声。180 nm CMOS工艺仿真结果表明,在不使用数字校准的情况下,所设计的10位二阶无源NS SAR ADC电路以100 kS/s的采样率和5的OSR,实现了13.5位ENOB,电路功耗仅为6.98μW。

一种16位110 dB无杂散动态范围的低功耗SAR ADC

该文设计了一款16位、转换速率为625 kS/s的逐次逼近寄存器型模数转换器(SAR ADC)。改进的采样保持电路结构,优化了采样线性度和噪声性能。采用分段结构设计电容型数模转换器并使用混合方式的电容切换方案,减小面积和能耗。利用扰动注入技术提升ADC的线性度。比较器采用两级积分型预放大器减小噪声,利用输出失调存储技术及优化的电路设计减小了比较器失调电压和失调校准引入的噪声,优化并提升了比较器速度。芯片采用CMOS 0.18μm工艺设计和流片,ADC核心面积为1.15 mm^(2)。测试结果表明,在1 kHz正弦信号输入下,ADC差分输入峰峰值幅度达8.8 V,信纳比为85.9 dB,无杂散动态范围为110 dB,微分非线性为-0.27/+0.32 LSB,积分非线性为-0.58/+0.53 LSB,功耗为4.31 mW。

高精度低功耗噪声整形SAR ADC设计

针对传统无源有损积分环路滤波器相较于有源无损积分环路滤波器,具有功耗低、电路设计简单等特点,但其噪声传输函数(NTF:Noise Transfer Function)平滑,噪声整形效果较弱的问题,提出了一种无源无损的二阶积分环路滤波器,保留了无源有损积分优点的同时具有良好噪声整形效果。设计了一款分辨率为16 bit、采样率为2 Ms/s的混合架构噪声整形SAR ADC。仿真结果表明,在125 kHz带宽、过采样比为8时,实现了高信号与噪声失真比(SNDR(Signal to Noise and Distortion Ratio)为91.1 dB)、高精度(14.84 bit)和低功耗(285μW)的性能。

应用于24G雷达芯片系统的12 bit 50 MS/s SAR ADC

针对24G雷达芯片的设计需要,设计了一款12 bit、采样率为50 MS/s的逐次逼近型模数转换器(SARADC)。整体架构采用全差分形式,采用改进型的分裂式电容阵列,提高CDAC的建立速度。同时,采用二进制重组权重的冗余校正算法,进一步提高系统线性度。利用优化的Strong-arm比较器结构,与异步时序配合,提高ADC的工作速度。电路采用SMIC 40 nmCMOS工艺进行设计,后仿真结果表明,在电源电压为1.1 V,采样率为50 MS/s下,输入信号频率约为5 MHz的正弦信号,无杂散动态范围为80.6 dBc,信噪失真比为71.5 dB,有效位数能够达到11.58 bit。

应用于5.8 GHz雷达中的12 bit SAR ADC

为满足5.8 GHz雷达系统的需要,在HLMC55LP工艺中设计了一款12 bit SAR ADC,ADC的采样率为500 kHz/250 kHz两档可调,采用单调电容开关时序,且在电容阵列的高位部分加上2个冗余位设计,该冗余位对高位的CDAC建立误差,比较器误差都有一定的容忍能力,可以带来ADC性能上的提升。系统采用上极板采样,可以在采样周期结束的瞬间就开始逐位比较过程,省去了采用底极板采样第一拍CDAC建立的过程,提高了转换速度,相对于底极板采样也节省了一定的开关功耗。后仿结果表明,模拟输入20 kHz差分中频信号,在500 kHz采样频率,3.3 V电源电压下,ADC的有效位数为11.56 bit,SNR为71.04 dB,SFDR为80.37 dBc,功耗约为2 mW。

一种实现失配误差整形与4倍无源增益的噪声整形SAR ADC

本文提出了一种高分辨率的完全无源的噪声整形逐次逼近型模数转换器(SAR ADC)。首先,其采用了一种二阶误差反馈式失配误差整形技术(EFMES),并且使用了一种数字预测方法来恢复MES引起的信号范围损失。其次,采用了一种完全无源的噪声整形结构,实现了无源求和与4倍无源增益,对系统内热噪声与量化噪声进行整形。最后。采用了一种差分式的定制电容,大大降低了电容阵列整体面积的同时依然保有良好的线性度。该设计使用SMIC 0.18μm工艺实现,后仿真表明,在1.8V电源电压、25倍过采样率和1MS/s的采样频率下,ADC的SNDR为88.23dB,SFDR为93.67dB。功耗仅为965μW,电路有效面积为1.95mm^(2)。

An 8 bit 12 MS/s asynchronous successive approximation register ADC with an on-chip reference

This paper proposes an 8 bit asynchronous successive approximation register ADC for wireless transceivers. A split capacitor DAC is used to reduce power and area consumption and the value of the split capacitor is calculated theoretically to ensure linearity. Asynchronous control logic is proposed to eliminate the high internal clocks and significantly speeds up the successive approximation algorithm. An on-chip reference with a fully integrated buffer and decoupling capacitor is adopted for avoiding an extra pin for the off-chip reference. The prototype, fabricated in UMC 0.18 um CMOS technology, achieves an effective number of bits of 7.64 bits at a sampling frequency of 12 MS/s. The total power consumption is 0.918 mW for a 1.8 V supply, while the onchip reference consumes 53% of the total power. It achieves a figure of merit of 180 fJ/conv-step, excluding the reference＇s power consumption.

A low power 8-bit successive approximation register A/D for a wireless body sensor node

A power efficient 8-bit successive approximation register（SAR） A/D for the vital sign monitoring of a wireless body sensor network（WBSN） is presented.A charge redistribution architecture is employed.The prototype A/D is fabricated in 0.18μm CMOS.The A/D achieves 7.5ENOB with sampling rate varying from 64 kHz to 1.5 MHz. The power consumption varies from 10.8 to 225.7μW.

逐次逼近A/D转换器综述

从逐次逼近A/D转换器(SA-A/D)的工作原理出发,分别对其核心模块D/A转换器和比较器进行了讨论。SA-A/D转换器中的D/A转换器可分为电压定标、电流定标和电荷定标三种,重点分析了三种目前应用较多的并行电容、分段电容和RC混合结构。SA-A/D转换器中的比较器可分为运放结构比较器和锁存(latch)比较器,实际常常使用这两种结构级联的高速高精度比较器,并配合失调校准技术,达到较高精度。最后,简要总结了SA-A/D转换器的研究现状,阐述了其在精度、速度和功耗三个方面的发展状况。

一种基于新型寄存器结构的逐次逼近A/D转换器

介绍了一种10位CMOS逐次逼近型A／D转换器。在25kSPS采样频率以下，根据模拟输入端输入的0～10V模拟信号，通过逐次逼近逻辑，将其转化为10位无极性数字码。转换器的SAR寄存器结构采用了一种新的结构来实现D触发器。该转换器采用3μmCMOS工艺制作，信噪比为49dB，积分非线性为±0．5LSB。

一种R-C-R组合式12位逐次逼近A/D转换器

采用一种R-C-R组合式逐次逼近A/D转换方法,基于UMC 90 nm CMOS工艺设计了一种12位1兆赫兹采样频率的逐次逼近型A/D转换器.在电路设计上,通过复用两段式电阻梯结构,有效地降低了系统对电容阵列的匹配性要求.在版图设计方面,采用了特殊的电阻梯版图设计方法来减小连接电阻的失配影响,并采用金属叉指电容来提高工艺兼容性以减小工艺成本.在3.3 V模拟电源电压和1.0 V数字电源电压下,测得微分非线性为0.78最低有效位.当采样速率为1兆采样点每秒,输入信号频率为10 kHz时,测得的有效位数为10.3,包括输出驱动在内,功耗不足10 mW.整个转换器的有源面积小于0.31 mm2,符合嵌入式片上系统的应用要求.

一种10位200kS/s 65nm CMOS SAR ADC IP核

该文基于65nm CMOS低漏电工艺,设计了一种用于触摸屏SoC的8通道10位200kS/s逐次逼近寄存器型(Successive Approximation Register,SAR)A/D转换器(Analog-to-Digital Converter,ADC)IP核。在D/A转换电路的设计上,采用"7MSB(Most-Significant-Bit)+3LSB(Least-Significant-Bit)"R-C混合D/A转换方式,有效减小了IP核的面积,并通过采用高位电阻梯复用技术有效减小了系统对电容的匹配性要求。在比较器的设计上,通过采用一种低失调伪差分比较技术,有效降低了输入失调电压。在版图设计上,结合电容阵列对称布局以及电阻梯伪电阻包围的版图设计方法进行设计以提高匹配性能。整个IP核的面积为322μm×267μm。在2.5V模拟电压以及1.2V数字电压下,当采样频率为200kS/s,输入频率为1.03kHz时,测得的无杂散动态范围(Spurious-Free Dynamic Range,SFDR)和有效位数(Effective Number Of Bits,ENOB)分别为68.2dB和9.27,功耗仅为440μW,测试结果表明本文ADC IP核非常适合嵌入式系统的应用。