Ball grid arrays (BGAs) have been used in the production of electronic devices/assemblies because of their advantages of small size, high I/O port density, etc. However, BGA voids can degrade the performance of the bo...Ball grid arrays (BGAs) have been used in the production of electronic devices/assemblies because of their advantages of small size, high I/O port density, etc. However, BGA voids can degrade the performance of the board and cause failure. In this paper, a novel blob filter is proposed to automatically detect BGA voids presented in X-ray images. The proposed blob filter uses the local image gradient magnitude and thus is not influenced by image brightness, void position, or component interference. Different sized average box filters are employed to analyze the image in multi-scale, and as a result, the proposed blob filter is robust to void size. Experimental results show that the proposed method obtains void detection accuracy of up to 93.47% while maintaining a low false ratio. It outperforms another recent algorithm based on edge detection by 40.69% with respect to the average detection accuracy, and by 16.91% with respect to the average false ratio.展开更多
A ball grid array （BGA） package based on Si interposer with through silicon via （TSV） was de- signed. Thermal behaviors of the designed BGA with Si interposer has been analyzed and compared to a conventional BGA w...A ball grid array （BGA） package based on Si interposer with through silicon via （TSV） was de- signed. Thermal behaviors of the designed BGA with Si interposer has been analyzed and compared to a conventional BGA with BT substrate in the approach of finite element modeling （FEM）. The Si interposer with TSV was then fabricated and the designed BGA package was demonstrated. The designed BGA pack- age includes a 100 ~m thick Si interposer, which has redistribution copper traces on both sides. Through vias with 25 to 40 ~m diameter were fabricated on the Si interposer using deep reactive ion etching （DRIE）, plasma enhanced chemical vapor deposition （PECVD）, copper electroplating and chemical mechanical pol- ishing （CMP）, etc. TSV in the designed interposer is used as electrical interconnections and cooling chan- nels. 5 mm by 5 mm and 10 mm by 10 mm thermal chips were assembled on the Si interposer.展开更多
基金supported by the Dankook University 2010 Funding for Research Institute of Information and Communication Convergence Technology (RICT),Korea
文摘Ball grid arrays (BGAs) have been used in the production of electronic devices/assemblies because of their advantages of small size, high I/O port density, etc. However, BGA voids can degrade the performance of the board and cause failure. In this paper, a novel blob filter is proposed to automatically detect BGA voids presented in X-ray images. The proposed blob filter uses the local image gradient magnitude and thus is not influenced by image brightness, void position, or component interference. Different sized average box filters are employed to analyze the image in multi-scale, and as a result, the proposed blob filter is robust to void size. Experimental results show that the proposed method obtains void detection accuracy of up to 93.47% while maintaining a low false ratio. It outperforms another recent algorithm based on edge detection by 40.69% with respect to the average detection accuracy, and by 16.91% with respect to the average false ratio.
基金Supported by the National S&T Major Project (No. 2009ZX02038)the National High-Tech Research and Development (863) Program of China (No. 2009AA04321)supported by Cisco Systems Inc
文摘A ball grid array （BGA） package based on Si interposer with through silicon via （TSV） was de- signed. Thermal behaviors of the designed BGA with Si interposer has been analyzed and compared to a conventional BGA with BT substrate in the approach of finite element modeling （FEM）. The Si interposer with TSV was then fabricated and the designed BGA package was demonstrated. The designed BGA pack- age includes a 100 ~m thick Si interposer, which has redistribution copper traces on both sides. Through vias with 25 to 40 ~m diameter were fabricated on the Si interposer using deep reactive ion etching （DRIE）, plasma enhanced chemical vapor deposition （PECVD）, copper electroplating and chemical mechanical pol- ishing （CMP）, etc. TSV in the designed interposer is used as electrical interconnections and cooling chan- nels. 5 mm by 5 mm and 10 mm by 10 mm thermal chips were assembled on the Si interposer.
