Investigations on surface decomposition of GaN implanted with low energy (80 keV) Eu ion to a low dose (l×1014 cm-2), and its annealing behavior under high temperature (1050℃) in N2 are performed. The as-grown, ...Investigations on surface decomposition of GaN implanted with low energy (80 keV) Eu ion to a low dose (l×1014 cm-2), and its annealing behavior under high temperature (1050℃) in N2 are performed. The as-grown, as-implanted and annealed GaN films are characterized by proton elastic scattering (PES), Rutherford backscattering spectrometry (RBS), photoluminescence (PL) and atomic force microscopy (AFM). The results show that Eu ion implantation induces radiation defects and decomposition of GaN. The GaN surface decomposition is more serious during high temperature annealing. The atomic ratio of N in as-grown, as-implanted and annealed GaN film is 47 at.%, 44 at.% and 40 at.%, respectively. As a result, a rough Ga-rich layer is formed at the surface, though the lattice defects are partly removed after high temperature annealing.展开更多
基金Supported by Laboratory of Nuclear Analyses and Techniques,the Chinese Academy of Sciences
文摘Investigations on surface decomposition of GaN implanted with low energy (80 keV) Eu ion to a low dose (l×1014 cm-2), and its annealing behavior under high temperature (1050℃) in N2 are performed. The as-grown, as-implanted and annealed GaN films are characterized by proton elastic scattering (PES), Rutherford backscattering spectrometry (RBS), photoluminescence (PL) and atomic force microscopy (AFM). The results show that Eu ion implantation induces radiation defects and decomposition of GaN. The GaN surface decomposition is more serious during high temperature annealing. The atomic ratio of N in as-grown, as-implanted and annealed GaN film is 47 at.%, 44 at.% and 40 at.%, respectively. As a result, a rough Ga-rich layer is formed at the surface, though the lattice defects are partly removed after high temperature annealing.
