Gallium nitride （GaN） high electron mobility transistor （HEMT） with symmetrical structure as a control device is discussed in this paper. The equivalent circuit model is proposed on the basis of physical and elect...Gallium nitride （GaN） high electron mobility transistor （HEMT） with symmetrical structure as a control device is discussed in this paper. The equivalent circuit model is proposed on the basis of physical and electrical properties of the GaN HEMT device. A transistor with 0.5 μm gate length and 6 x 125 gm gate width is fabricated to verify the model, which can be treated as a single pole single throw （SPST） switch due to the ON state and OFF state. The measurement results show a lzood agreement with the simulation results, which demonstrates the effectiveness of the proposed model.展开更多
A GaAs MESFET three-terminal varactor diode fabricated on a semi-insulating substrate can be used for the MMIC active voltage-controlled filter because it is compatible with the standard GaAs MMIC process. The high ca...A GaAs MESFET three-terminal varactor diode fabricated on a semi-insulating substrate can be used for the MMIC active voltage-controlled filter because it is compatible with the standard GaAs MMIC process. The high capacitance ratio needed for wideband tuning filter requires the three-terminal varactor diode (TTVD) to be biased up pinch-off voltage or positive bias. Therefore a variable-capacitance model is applied to analyzing C-V characteristics of this TTVD. The earlier capacitance model for GaAs MESFET did not consider the free carrier move in active region which can cause varying the C-V characteristic, but only depletion layer model approximation. The new model described here takes into account the free carrier move for contributing to gate capacitance. The model analytical results agree well with experiment.展开更多
基于GaAs PHEMT ED25B与薄膜工艺设计了基于倒装应用的DC^26 GHz的单刀双掷(SPDT)开关。首先对倒装芯片与传统的正装芯片进行比较,倒装芯片MMIC技术具有明显的优势;然后对比了不同倒装情况对芯片性能的影响进而提出对倒装无源元器件和Ga...基于GaAs PHEMT ED25B与薄膜工艺设计了基于倒装应用的DC^26 GHz的单刀双掷(SPDT)开关。首先对倒装芯片与传统的正装芯片进行比较,倒装芯片MMIC技术具有明显的优势;然后对比了不同倒装情况对芯片性能的影响进而提出对倒装无源元器件和GaAs PHEMT开关建模的概念,利用建模软件提取了相应的模型;对倒装单刀双掷开关MMIC的设计进行了详细阐述;对制备的倒装单刀双掷开关MMIC进行测试。测试结果表明,回波损耗大于15 d B,插损小于2.8 d B,隔离度大于28 d B。最后对芯片进行温度循环试验和恒定加速度试验,验证了这款基于倒装应用的单刀双掷开关MMIC的可靠性。展开更多
基金supported by the National Natural Science Foundation of China (61574108, 61574112, 61504099)the Natural Science Basic Research Plan in Shaanxi Province of China (605119425012)
文摘Gallium nitride （GaN） high electron mobility transistor （HEMT） with symmetrical structure as a control device is discussed in this paper. The equivalent circuit model is proposed on the basis of physical and electrical properties of the GaN HEMT device. A transistor with 0.5 μm gate length and 6 x 125 gm gate width is fabricated to verify the model, which can be treated as a single pole single throw （SPST） switch due to the ON state and OFF state. The measurement results show a lzood agreement with the simulation results, which demonstrates the effectiveness of the proposed model.
文摘A GaAs MESFET three-terminal varactor diode fabricated on a semi-insulating substrate can be used for the MMIC active voltage-controlled filter because it is compatible with the standard GaAs MMIC process. The high capacitance ratio needed for wideband tuning filter requires the three-terminal varactor diode (TTVD) to be biased up pinch-off voltage or positive bias. Therefore a variable-capacitance model is applied to analyzing C-V characteristics of this TTVD. The earlier capacitance model for GaAs MESFET did not consider the free carrier move in active region which can cause varying the C-V characteristic, but only depletion layer model approximation. The new model described here takes into account the free carrier move for contributing to gate capacitance. The model analytical results agree well with experiment.
文摘基于GaAs PHEMT ED25B与薄膜工艺设计了基于倒装应用的DC^26 GHz的单刀双掷(SPDT)开关。首先对倒装芯片与传统的正装芯片进行比较,倒装芯片MMIC技术具有明显的优势;然后对比了不同倒装情况对芯片性能的影响进而提出对倒装无源元器件和GaAs PHEMT开关建模的概念,利用建模软件提取了相应的模型;对倒装单刀双掷开关MMIC的设计进行了详细阐述;对制备的倒装单刀双掷开关MMIC进行测试。测试结果表明,回波损耗大于15 d B,插损小于2.8 d B,隔离度大于28 d B。最后对芯片进行温度循环试验和恒定加速度试验,验证了这款基于倒装应用的单刀双掷开关MMIC的可靠性。
