In this paper,we propose and demonstrate a2 9 2 optical Benes switching unit based on two nested silicon microring resonators(MRRs)monolithically integrated on a silicon-on-insulator(SOI)wafer.High extinction ratios(E...In this paper,we propose and demonstrate a2 9 2 optical Benes switching unit based on two nested silicon microring resonators(MRRs)monolithically integrated on a silicon-on-insulator(SOI)wafer.High extinction ratios(ERs)of about 44.7/38.0 dB and low crosstalk values of about-37.5/-45.2 dB at cross/bar states are obtained with the fabricated device.The operation principle is theoretically studied and the switching function is verified by system demonstration experiments with 10 and12.5 Gb/s non-return-to-zero(NRZ)signals.The switching speed on the order of gigahertz based on free carrier effect in silicon is also experimentally demonstrated.展开更多
基金supported in part by the National Natural Science Foundation of China (61125504 and 61235007)in part by MoE Grant (20110073110012)in part by Minhang Talent Program
文摘In this paper,we propose and demonstrate a2 9 2 optical Benes switching unit based on two nested silicon microring resonators(MRRs)monolithically integrated on a silicon-on-insulator(SOI)wafer.High extinction ratios(ERs)of about 44.7/38.0 dB and low crosstalk values of about-37.5/-45.2 dB at cross/bar states are obtained with the fabricated device.The operation principle is theoretically studied and the switching function is verified by system demonstration experiments with 10 and12.5 Gb/s non-return-to-zero(NRZ)signals.The switching speed on the order of gigahertz based on free carrier effect in silicon is also experimentally demonstrated.