Analysis of Switching Overvoltage in Regional Grid with Small Hydropower Plants

Present-day small hydropower plants (SHPs) have a large development potential because of the increasing interest in renewable resources and distributed energy generation, therefore, there are many SHPs in places of China where are rich in water resources. However, it has caused overvoltages in the distribution network, and which is even worse for the switching overvoltage such as isolated network operation, changing power supply path. The simple network model is used to analyze the reasons of the switching overvoltage, and the simulation software DIgSILENT/PowerFactory is used to check out the results of the theoretical analysis.

Tunable Three-Wavelength Fiber Laser and Transient Switching between Three-Wavelength Soliton and Q-Switched Mode-Locked States

We report a passive mode-locked fiber laser that can realize single-wavelength tuning and multi-wavelength spacing tuning simultaneously.The tuning range is from 1528 nm–1560 nm,and up to three bands of soliton states can be output at the same time.These results are confirmed by a nonlinear Schrodinger equation model based on the split-step Fourier method.In addition,we reveal a way to transform the multi-wavelength soliton state into the Q-switched mode-locked state,which is period doubling.These results will promote the development of optical communication,optical sensing and multi-signal pulse emission.

Resistive switching behavior and mechanism of HfO_(x) films with large on/off ratio by structure design

Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy,and the oxygen vacancies are analyzed. Highly improved on/off ratio(~104) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO_(x) sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO_(x)-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.

Review of Three-phase Soft Switching Inverters and Challenges for Motor Drives

For electric vehicles (EVs),it is necessary to improve endurance mileage by improving the efficiency.There exists a trend towards increasing the system voltage and switching frequency,contributing to improve charging speed and power density.However,this trend poses significant challenges for high-voltage and high-frequency motor controllers,which are plagued by increased switching losses and pronounced switching oscillations as consequences of hard switching.The deployment of soft switching technology presents a viable solution to mitigate these issues.This paper reviews the applications of soft switching technologies for three-phase inverters and classifies them based on distinct characteristics.For each type of inverter,the advantages and disadvantages are evaluated.Then,the paper introduces the research progress and control methods of soft switching inverters (SSIs).Moreover,it presents a comparative analysis among the conventional hard switching inverters (HSIs),an active clamping resonant DC link inverter (ACRDCLI) and an auxiliary resonant commuted pole inverter (ARCPI).Finally,the problems and prospects of soft switching technology applied to motor controllers for EVs are put forward.

Wedge-shaped HfO_(2) buffer layer-induced field-free spin-orbit torque switching of HfO_(2)/Pt/Co structure

Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.

Machine-Learning Based Packet Switching Method for Providing Stable High-Quality Video Streaming in Multi-Stream Transmission

Broadcasting gateway equipment generally uses a method of simply switching to a spare input stream when a failure occurs in a main input stream.However,when the transmission environment is unstable,problems such as reduction in the lifespan of equipment due to frequent switching and interruption,delay,and stoppage of services may occur.Therefore,applying a machine learning(ML)method,which is possible to automatically judge and classify network-related service anomaly,and switch multi-input signals without dropping or changing signals by predicting or quickly determining the time of error occurrence for smooth stream switching when there are problems such as transmission errors,is required.In this paper,we propose an intelligent packet switching method based on the ML method of classification,which is one of the supervised learning methods,that presents the risk level of abnormal multi-stream occurring in broadcasting gateway equipment based on data.Furthermore,we subdivide the risk levels obtained from classification techniques into probabilities and then derive vectorized representative values for each attribute value of the collected input data and continuously update them.The obtained reference vector value is used for switching judgment through the cosine similarity value between input data obtained when a dangerous situation occurs.In the broadcasting gateway equipment to which the proposed method is applied,it is possible to perform more stable and smarter switching than before by solving problems of reliability and broadcasting accidents of the equipment and can maintain stable video streaming as well.

Chalcogenide Ovonic Threshold Switching Selector

Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.

Effect of Different Arresters on Switching Overvoltages in UHV Transmission Lines

The amplitude of switching overvoltages is a key factor for designing the insulation of UHV equipment. The effect of different arresters needs to be studied, since installing arresters is an important way to suppress switching overvoltages in UHV transmission lines. Switching overvoltages on the 1000 kV Huainan-Huxi double-circuit transmission line were simulated for different operating modes and different arrester designs using the electromagnetic transient program PSCAD/EMTDC. With parallel resistors, the switching overvoltages are less than 1.70 p.u. （1.0 p.u.=1100×√ 2 /√3 kV）. If the arrestors are better, the switching overvoltages can be reduced even lower to 1.55 p.u. Without parallel resistors, the arresters can reduce three-phase energizing overvoltages to 1.70 p.u, while the single-phase reclosing overvoltages still exceed the limit. The results show that the parallel resistors cannot be eliminated if the arresters are only installed at each end of the transmission line. Also, better quality arresters significantly lower the switching overvoltages.

Cooperative Target Tracking of Multiple Autonomous Surface Vehicles Under Switching Interaction Topologies

This paper is concerned with the cooperative target tracking of multiple autonomous surface vehicles(ASVs)under switching interaction topologies.For the target to be tracked,only its position can be measured/received by some of the ASVs,and its velocity is unavailable to all the ASVs.A distributed extended state observer taking into consideration switching topologies is designed to integrally estimate unknown target dynamics and neighboring ASVs'dynamics.Accordingly,a novel kinematic controller is designed,which takes full advantage of known information and avoids the approximation of some virtual control vectors.Moreover,a disturbance observer is presented to estimate unknown time-varying environmental disturbance.Furthermore,a distributed dynamic controller is designed to regulate the involved ASVs to cooperatively track the target.It enables each ASV to adjust its forces and moments according to the received information from its neighbors.The effectiveness of the derived results is demonstrated through cooperative target tracking performance analysis for a tracking system composed of five interacting ASVs.

Volatile threshold switching memristor:An emerging enabler in the AIoT era

With rapid advancement and deep integration of artificial intelligence and the internet-of-things,artificial intelligence of things has emerged as a promising technology changing people’s daily life.Massive growth of data generated from the devices challenges the AIoT systems from information collection,storage,processing and communication.In the review,we introduce volatile threshold switching memristors,which can be roughly classified into three types:metallic conductive filament-based TS devices,amorphous chalcogenide-based ovonic threshold switching devices,and metal-insulator transition based TS devices.They play important roles in high-density storage,energy efficient computing and hardware security for AIoT systems.Firstly,a brief introduction is exhibited to describe the categories(materials and characteristics)of volatile TS devices.And then,switching mechanisms of the three types of TS devices are discussed and systematically summarized.After that,attention is focused on the applications in 3D cross-point memory technology with high storage-density,efficient neuromorphic computing,hardware security(true random number generators and physical unclonable functions),and others(steep subthreshold slope transistor,logic devices,etc.).Finally,the major challenges and future outlook of volatile threshold switching memristors are presented.

A Novel Switching Architecture for IP Over WDM Networks

Integrating IP and WDM is an attractive direction for research. Many solutions have been presented but it is noted that the existing switching technologies still need more concern. Since optical packet switching is not practical yet, there are just two possible solutions left. One is wavelength routing(WR), which is circuit switching in essence and the other is newly proposed optical burst switching (OBS). In this paper, characteristics of WR and OBS are first described, then, compared in several aspects. It is notice that in many aspects, the wavelength routing and burst switching are complement. This stimulates us to propose a new switching architecture, which may be considered as "mixture" of WR and OBS. We beleve the network built on new switching structure can accommodate the requirements of practicability, flexibility, robustness, effciency and etc. simultaneously. However, many related problems still need to be further researched.

Mutation detection and fast identification of switching system based on data-driven method

In the engineering field,switching systems have been extensively studied,where sudden changes of parameter value and structural form have a significant impact on the operational performance of the system.Therefore,it is important to predict the behavior of the switching system,which includes the accurate detection of mutation points and rapid reidentification of the model.However,few efforts have been contributed to accurately locating the mutation points.In this paper,we propose a new measure of mutation detection—the threshold-based switching index by analogy with the Lyapunov exponent.We give the algorithm for selecting the optimal threshold,which greatly reduces the additional data collection and the relative error of mutation detection.In the system identification part,considering the small data amount available and noise in the data,the abrupt sparse Bayesian regression(abrupt-SBR)method is proposed.This method captures the model changes by updating the previously identified model,which requires less data and is more robust to noise than identifying the new model from scratch.With two representative dynamical systems,we illustrate the application and effectiveness of the proposed methods.Our research contributes to the accurate prediction and possible control of switching system behavior.

Lyapunov-Based Output Containment Control of Heterogeneous Multi-Agent Systems With Markovian Switching Topologies and Distributed Delays

This paper considers the mean square output containment control problem for heterogeneous multi-agent systems(MASs)with randomly switching topologies and nonuniform distributed delays.By modeling the switching topologies as a continuous-time Markov process and taking the distributed delays into consideration,a novel distributed containment observer is proposed to estimate the convex hull spanned by the leaders'states.A novel distributed output feedback containment controller is then designed without using the prior knowledge of distributed delays.By constructing a novel switching Lyapunov functional,the output containment control problem is then solved in the sense of mean square under an easily-verifiable sufficient condition.Finally,two numerical examples are given to show the effectiveness of the proposed controller.

Colorless to black switching with high contrast ratio via the electrochemical process of a hybrid organic-inorganic perovskite

Colorless‐to‐black switching has attracted widespread attention for smart windows and multifunctional displays because they are more useful to control solar energy.However,it still remains a challenge owing to the tremendous difficulties in the design of completely reverse absorptions in transmissive and colored states.Herein,we report on an electrochemical device that can switch between colorless and black by using the electrochemical process of hybrid organic–inorganic perovskite MAPbBr_(3),which shows a high integrated contrast ratio of up to 73%from 400 to 800 nm.The perovskite solution can be used as the active layer to assemble the device,showing superior transmittance over the entire visible region in neutral states.By applying an appropriate voltage,the device undergoes reversible switching between colorless and black,which is attributed to the formation of lead and Br_(2)in the redox reaction induced by the electron transfer process in MAPbBr_(3).In addition,the contrast ratio can be modulated over the entire visible region by changing the concentration and the applied voltage.These results contribute toward gaining an insightful understanding of the electrochemical process of perovskites and greatly promoting the development of switchable devices.

Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization

Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a novel approach to accomplish this task at room temperature by resistive switching(RS) via electrochemical metallization(ECM) in a device with the stack of Si/SiO_(2)/Ta/Pt/Ag/Mn-doped ZnO(MZO)/Pt/Co/Pt/ITO.By applying certain voltages,the device could be set at high-resistance-state(HRS) and low-resistance-state(LRS),accompanied with a larger and a smaller coercivity(H_(C)),respectively,which demonstrates a nonvolatile E-field control of PMA.Based on our previous studies and the present control experiments,the electric modulation of PMA can be briefly explained as follows.At LRS,the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich,leading to weakening of PMA and reduction of H_(C).In contrast,at HRS,most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich,causing partial recovery of PMA and an increase of H_(C).This work provides a new clue to designing low-power spintronic devices based on PMA films.

A Novel Multi-Granularity Flexible-Grid Switching Optical-Node Architecture

A novel multi-granularity flexible-grid switching optical-node architecture is proposed in this paper.In our system,the photonic lanterns are used as mode division multiplexing/demultiplexing(MD-Mux/MD-Demux)for selecting mode.The wavelength division multiplexer/demultiplexer(WDMux/WD-Demux)and the fiber bragg gratings(FBGs)are used to select wavelength channels with the various grid.The experimental results show that the transmission bandwidth covers the C+L band,the average transmission loss is-13.4 dB,and the average crosstalk is-30.5 dB.The optical-node architecture is suit for mode division multiplexing(MDM)optical communication system.

Traffic prediction enabled dynamic access points switching for energy saving in dense networks

To meet the ever-increasing traffic demand and enhance the coverage of cellular networks,network densification is one of the crucial paradigms of 5G and beyond mobile networks,which can improve system capacity by deploying a large number of Access Points(APs)in the service area.However,since the energy consumption of APs generally accounts for a substantial part of the communication system,how to deal with the consequent energy issue is a challenging task for a mobile network with densely deployed APs.In this paper,we propose an intelligent AP switching on/off scheme to reduce the system energy consumption with the prerequisite of guaranteeing the quality of service,where the signaling overhead is also taken into consideration to ensure the stability of the network.First,based on historical traffic data,a long short-term memory method is introduced to predict the future traffic distribution,by which we can roughly determine when the AP switching operation should be triggered;second,we present an efficient three-step AP selection strategy to determine which of the APs would be switched on or off;third,an AP switching scheme with a threshold is proposed to adjust the switching frequency so as to improve the stability of the system.Experiment results indicate that our proposed traffic forecasting method performs well in practical scenarios,where the normalized root mean square error is within 10%.Furthermore,the achieved energy-saving is more than 28% on average with a reasonable outage probability and switching frequency for an area served by 40 APs in a commercial mobile network.

HARNACK TYPE INEQUALITIES FOR SDES DRIVEN BY FRACTIONAL BROWNIAN MOTION WITH MARKOVIAN SWITCHING

In this paper, by constructing a coupling equation, we establish the Harnack type inequalities for stochastic differential equations driven by fractional Brownian motion with Markovian switching. The Hurst parameter H is supposed to be in(1/2, 1). As a direct application, the strong Feller property is presented.

Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir_(20)Mn_(80)

Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.