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Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS
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作者 Rasika N. Mohottige Micheal Farndale +1 位作者 Gary S. Coombs Shahnoza Saburhhojayeva 《Open Journal of Applied Sciences》 2024年第5期1315-1329,共15页
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ... We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels. 展开更多
关键词 n-si p-CIGS 1D-SCApS Thin-Films in2S3
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固溶时间对Ti@(Al-Si-Ti)_(p)/A356复合材料组织及力学性能的影响
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作者 张金玉 陈体军 《热加工工艺》 北大核心 2024年第6期21-25,共5页
采用粉末触变成形技术制备了原位自生心-壳结构增强A356铝基复合材料,并研究了固溶时间对Ti@(Al-Si-Ti)_(p)/A356复合材料显微其组织及力学性能的影响。结果表明,随着固溶时间增加,初生α-Al相颗粒粗化长大;共晶Si相不断溶解,晶界上残... 采用粉末触变成形技术制备了原位自生心-壳结构增强A356铝基复合材料,并研究了固溶时间对Ti@(Al-Si-Ti)_(p)/A356复合材料显微其组织及力学性能的影响。结果表明,随着固溶时间增加,初生α-Al相颗粒粗化长大;共晶Si相不断溶解,晶界上残余的共晶Si粗化、球状化;Al基体、Ti心部继续反应,增强体颗粒壳层发生相转变。复合材料在545℃固溶处理1 h时,力学性能达到峰值,其抗拉强度、屈服强度和伸长率分别为263.9 MPa、175.1 MPa、20%,比制备态复合材料分别提高了7.3%、21.4%和12.4%,维氏硬度也从59.3 HV提高到72.8 HV。 展开更多
关键词 粉末触变成形 Ti@(Al-si-Ti)_(p)/A356复合材料 固溶时间 力学性能
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p-Si/n-Ga_(2)O_(3)异质结制备与特性研究
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作者 陈沛然 焦腾 +6 位作者 陈威 党新明 刁肇悌 李政达 韩宇 于含 董鑫 《人工晶体学报》 北大核心 2024年第1期73-81,共9页
本实验采用金属有机化学气相沉积(MOCVD)工艺,在p(111)型Si衬底上制备了p-Si/n-Ga_(2)O_(3)结构的PN结。通过X射线衍射仪、原子力显微镜等对样品进行了晶体结构、表面形貌、表面粗糙度等的表征分析;通过磁控溅射与蒸镀方法在样品上生长T... 本实验采用金属有机化学气相沉积(MOCVD)工艺,在p(111)型Si衬底上制备了p-Si/n-Ga_(2)O_(3)结构的PN结。通过X射线衍射仪、原子力显微镜等对样品进行了晶体结构、表面形貌、表面粗糙度等的表征分析;通过磁控溅射与蒸镀方法在样品上生长Ti/Au电极并进行I-V特性曲线、开启电压、开关电流比、反向饱和电流、理想因子、零偏压下的势垒高度等结特性测试,研究了掺杂浓度与薄膜厚度对PN结特性的影响,并对其原因进行了分析;通过二步生长法和缓冲层温度优化实验,减少了Si衬底与β-Ga_(2)O_(3)之间的晶格失配与热失配带来的影响,对薄膜与器件特性进行了优化。最终获得了表面粗糙度最低可达到4.21 nm的高质量n型β-Ga_(2)O_(3)薄膜,以及具有较低理想因子(42.1)的PN结。 展开更多
关键词 β-Ga_(2)O_(3)薄膜 金属有机化学气相沉积 p-si/n-Ga_(2)O_(3) pN结 晶体质量 电学特性
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SiC_(p)含量对SiC_(p)/Al-1.2Mg-0.6Si铝基复合材料组织和性能影响
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作者 孟达 王惠梅 +5 位作者 杨磊 范玉虎 余申卫 王成辉 汪勇 曹栋 《热加工工艺》 北大核心 2024年第11期86-90,共5页
采用粉末冶金法制备SiC_(p)/Al-1.2Mg-0.6Si铝基复合材料,分析了该复合材料的均匀性和界面结合情况,探讨了几种体积分数该复合材料的显微组织和性能变化。结果表明,SiC颗粒和基体之间的界面清晰平滑,界面结合良好,但随着热压温度的增加,... 采用粉末冶金法制备SiC_(p)/Al-1.2Mg-0.6Si铝基复合材料,分析了该复合材料的均匀性和界面结合情况,探讨了几种体积分数该复合材料的显微组织和性能变化。结果表明,SiC颗粒和基体之间的界面清晰平滑,界面结合良好,但随着热压温度的增加,SiC与基体间的微观缩孔和析出相逐渐增多。随着SiC颗粒含量的增加,材料的弹性模量、热导率显著提高,弯曲强度先升高后下降,而热膨胀系数逐渐降低。 展开更多
关键词 siC_(p) 组织和性能 siC_(p)/Al-1.2Mg-0.6si铝基复合材料
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低填充P-Si基阻燃体系协效阻燃PA66的制备及性能
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作者 魏然 赵明亮 《工程塑料应用》 CAS CSCD 北大核心 2024年第8期169-175,共7页
尼龙66(PA66)作为一种广泛使用的工程塑料,因其优异的力学性能和加工性能而备受青睐。然而,PA66的可燃性限制了其在某些安全要求较高的应用领域的发展。为了解决这一问题,可通过构建P-Si基协效阻燃体系,对PA66进行熔融共混改性,以期提... 尼龙66(PA66)作为一种广泛使用的工程塑料,因其优异的力学性能和加工性能而备受青睐。然而,PA66的可燃性限制了其在某些安全要求较高的应用领域的发展。为了解决这一问题,可通过构建P-Si基协效阻燃体系,对PA66进行熔融共混改性,以期提高其阻燃性能、力学性能及热稳定性。采用熔融共混法制备PA66复合材料,利用二乙基次磷酸铝(ADP)、次磷酸铝(AHP)及纳米二氧化硅(SiO2)构建多元协效阻燃体系,并系统研究了ADP/AHP/SiO2协效阻燃体系对PA66性能的影响,对PA66复合材料的阻燃性能、力学性能及热稳定性进行了综合评价。实验结果表明,ADP/AHP/SiO2协效阻燃体系显著提升了PA66的阻燃性能,当添加总量为9份时,PA66复合材料的阻燃等级达到V-0级别,极限氧指数高达34.3%。此外,PA66复合材料的拉伸性能也得到了显著提升,拉伸强度和拉伸弹性模量分别提高了27%和36%。热重测试显示,PA66复合材料的热稳定性也有明显改善。ADP/AHP/SiO2协效阻燃体系不仅显著提高了PA66的阻燃性能,还有效改善了其力学性能和热稳定性。该体系的引入为PA66的工程应用提供了有力支持,具有重要的实际应用价值和市场前景。 展开更多
关键词 尼龙66 阻燃性能 p-si阻燃体系 低填充 性能
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Microstructure and properties of Al/Si/SiC composites for electronic packaging 被引量:13
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作者 朱晓敏 于家康 王新宇 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2012年第7期1686-1692,共7页
The Al/Si/SiC composites with medium volume fraction for electronic packaging were fabricated by gas pressure infiltration.On the premise of keeping the machinability of the composites,the silicon carbide particles,wh... The Al/Si/SiC composites with medium volume fraction for electronic packaging were fabricated by gas pressure infiltration.On the premise of keeping the machinability of the composites,the silicon carbide particles,which have the similar size with silicon particles(average 13 μm),were added to replace silicon particles of same volume fraction,and microstructure and properties of the composites were investigated.The results show that reinforcing particles are distributed uniformly and no apparent pores are observed in the composites.It is also observed that higher thermal conductivity(TC) and flexural strength will be obtained with the addition of SiC particles.Meanwhile,coefficient of thermal expansion(CTE) changes smaller than TC.Models for predicting thermal properties were also discussed.Equivalent effective conductivity(EEC) was proposed to make H-J model suitable for hybrid particles and multimodal particle size distribution. 展开更多
关键词 Al/si/siC composite electronic packaging thermal properties flexural strength
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半绝缘InP中Si^++P^+双注入的电学特性 被引量:1
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作者 沈鸿烈 杨根庆 +1 位作者 周祖尧 邹世昌 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1990年第8期623-626,共4页
研究了在200℃热靶条件下经Si^+单注入和S^++P^+双注入的半绝缘InP常规热退火和快速热退火后的电学特性。热退火后,双注入样品中的电学性能优于单注入样品。采用快速热退火后,双注入的效果更加显著。Si^+150keV,5×10^(14)cm^(-2)+P... 研究了在200℃热靶条件下经Si^+单注入和S^++P^+双注入的半绝缘InP常规热退火和快速热退火后的电学特性。热退火后,双注入样品中的电学性能优于单注入样品。采用快速热退火后,双注入的效果更加显著。Si^+150keV,5×10^(14)cm^(-2)+P^+160keV,5×10^(14)cm^(-2)双注入样品经850℃、5秒快速效退火后,最高载流子浓度达2.6×10^(19)cm^(-3),平均迁移率为890cm^2/V·s。 展开更多
关键词 磷化铟 离子注入 si%pLUS%p 热退火
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Hot deformation behavior and processing map of Cu-Ni-Si-P alloy 被引量:6
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作者 张毅 刘平 +3 位作者 田保红 刘勇 李瑞卿 许倩倩 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2013年第8期2341-2347,共7页
The high-temperature deformation behavior of Cu-Ni-Si-P alloy was investigated by using the hot compression test in the temperature range of 600-800 ℃ and strain rate of 0.01-5 s-1. The hot deformation activation ene... The high-temperature deformation behavior of Cu-Ni-Si-P alloy was investigated by using the hot compression test in the temperature range of 600-800 ℃ and strain rate of 0.01-5 s-1. The hot deformation activation energy, Q, was calculated and the hot compression constitutive equation was established. The processing maps of the alloy were constructed based on the experiment data and the forging process parameters were then optimized based on the generated maps for forging process determination. The flow behavior and the microstructural mechanism of the alloy were studied. The flow stress of the Cu-Ni-Si-P alloy increases with increasing strain rate and decreasing deformation temperature, and the dynamic recrystallization temperature of alloy is around 700 ℃. The hot deformation activation energy for dynamic recrystallization is determined as 485.6 kJ/mol. The processing maps for the alloy obtained at strains of 0.3 and 0.5 were used to predict the instability regimes occurring at the strain rate more than 1 s-1 and low temperature (〈650 ℃). The optimum range for the alloy hot deformation processing in the safe domain obtained from the processing map is 750-800 ℃ at the strain rate of 0.01-0.1 s i The characteristic microstructures predicted from the processing map agree well with the results of microstructural observations. 展开更多
关键词 Cu-Ni-si-p alloy hot compression deformation dynamic recrystallization constitutive equation processing maps
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Adsorption and Transfer Properties for Toluene and pDichlorobenzene in Dense CO_2/Silica Gel Packed Bed System by Moment Method and Time-Domain Analysis
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作者 杨晓宁 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2003年第3期280-288,共9页
Based on chromatographic theory, the moment method and the time-domain fitting analysis were applied to measure and evaluate the adsorption equilibrium constant and mass transfer properties (axial dispersion coefficie... Based on chromatographic theory, the moment method and the time-domain fitting analysis were applied to measure and evaluate the adsorption equilibrium constant and mass transfer properties (axial dispersion coefficient and effective intra-particle diffusivity) for toluene and p-dichlorobenzene on silica gel adsorbent in the subcritical and supercritical CO2. An apparatus based on supercritical fluid chromatography was established and the experiments were performed at temperatures of 298.15-318.15 K and pressures of 7.5-17.8 MPa. The two methods have been compared. The results show that for the systems studied here the moment method can give reasonable values for both adsorption equilibrium constant and mass transfer properties, but the time-domain analysis only can obtain the adsorption equilibrium constant. The dependence of adsorption equilibrium constant and mass transfer properties on temperature and pressure was investigated. 展开更多
关键词 supercritical CO2 ADSORpTION CHROMATOGRApHY moment method time-domain analysis
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cBN/SiN-p异质结的电学性质研究
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作者 陈光华 邓金祥 +3 位作者 宋雪梅 李茂登 于春娜 冯贞健 《固体电子学研究与进展》 CAS CSCD 北大核心 2002年第4期483-486,共4页
用射频溅射系统成功制备出 c BN/ Si N-p异质结 ,并系统研究了其电学性质。掺硫 (S)的 n型 c-BN薄膜用 1 3 .5 6MHz射频溅射系统沉积在 P型 Si(1 0 0 ) (8~ 1 5 Ω·cm)衬底上 ,靶材为 h-BN靶 (纯度达 99.99% )。溅射气体为氩气和... 用射频溅射系统成功制备出 c BN/ Si N-p异质结 ,并系统研究了其电学性质。掺硫 (S)的 n型 c-BN薄膜用 1 3 .5 6MHz射频溅射系统沉积在 P型 Si(1 0 0 ) (8~ 1 5 Ω·cm)衬底上 ,靶材为 h-BN靶 (纯度达 99.99% )。溅射气体为氩气和氮气混合而成 ,固态硫 (S)通过加热蒸发混入工作气体 ,改变硫的加热温度可改变硫的掺杂剂量。为了测量异质结的电学性质 ,用真空蒸镀法在异质结表面蒸镀了 1 .5 mm× 2 .0 mm的铝电极。实验结果表明 ,c BN/ Si N-p异质结的 I-V曲线具有明显的整流特性 ,其正向导电特性的拟合结果表明异质结的电流输运符合安德森理论 ,c BN/ Si N-p异质结的 C-V曲线也和理想异质结的 C-V特性非常接近。得到的 c BN/ Si N-p异质结的自建势为 4.71 V,c-BN薄膜层中的施主浓度为 6.5 0× 1 0 1 4/ cm3。 展开更多
关键词 立方氮化硼/硅N-p异质结 伏-安特性 电容-电压特性
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Al-Si-P master alloy and its modification and refinement performance on Al-Si alloys 被引量:11
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作者 ZUO Min LIU Xiangfa +1 位作者 DAI Hongshang LIU Xiangjun 《Rare Metals》 SCIE EI CAS CSCD 2009年第4期412-417,共6页
An Al-Si-P master alloy has been developed by an in-situ reaction and the electron probe microanalyzer (EPMA) results show that there are many pre-formed AlP particles contained in the master alloy. Silicon introduc... An Al-Si-P master alloy has been developed by an in-situ reaction and the electron probe microanalyzer (EPMA) results show that there are many pre-formed AlP particles contained in the master alloy. Silicon introduced into the system plays an important role in remarkably improving the distribution and content of AlP particles due to their similar crystal structure and lattice parameters. ZL109 alloys have shown fast modification response to the addition of 0.5% Al-15Si-3.5P master alloy at 720℃, with a mass of primary Si precipitating in size of about 15 μm. Also, coarse primary Si grains in AI-30Si alloy can be refined dramatically from 150 μm to 37 μm after the addition of 2.0% Al-15Si-3.5P master alloy at 850℃. The P recovery of the Al-15Si-3.5P master alloy is much higher than that of a Cu-8.5P master alloy due to the pre-formed AlP particles. 展开更多
关键词 Al-si alloys Al-si-p master alloy primary si p recovery MODIFICATION REFinEMENT
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未掺杂SI-InP中缺陷的正电子寿命研究 被引量:1
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作者 毛卫东 王少阶 +3 位作者 王柱 孙聂枫 孙同年 赵有文 《武汉大学学报(自然科学版)》 CSCD 2000年第5期593-596,共4页
在 10~ 30 0 K的温度范围内 ,测量了用液封直拉法 (L EC)生长的 n- In P经高温退火后形成的未掺杂SI- In P晶体的正电子寿命谱 .用 PATFIT和 MEL T两种技术分析了正电子寿命谱 .常温下的结果表明 ,SI- In P中存在铟空位 VIn或与杂质的... 在 10~ 30 0 K的温度范围内 ,测量了用液封直拉法 (L EC)生长的 n- In P经高温退火后形成的未掺杂SI- In P晶体的正电子寿命谱 .用 PATFIT和 MEL T两种技术分析了正电子寿命谱 .常温下的结果表明 ,SI- In P中存在铟空位 VIn或与杂质的复合体缺陷 .观察到在 10~ 2 2 0 K之间正电子的平均寿命 τm 随温度的升高而减小 ,表明上述缺陷是带负电荷的铟空位 VIn的氢复合体 ;但是在低温下还存在正电子浅捕获态 ,浅捕获中心很可能是反位缺陷 In2 - P ,因此在 2 2 0~ 30 0 K范围内平均寿命τm 随温度的升高而略有上升 . 展开更多
关键词 正电子寿命 空位--杂质复合体 化合物半导体
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(Mn,Fe)_(2)(P,Si)化合物的单晶生长及其磁性
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作者 美娟 苏叶 伊博乐 《内蒙古师范大学学报(自然科学汉文版)》 CAS 2023年第3期226-230,236,共6页
Fe_(2)P型一级相变材料因其巨磁热效应和原材料丰富且低廉等特点,在室温磁制冷和磁热泵等新兴绿色环保技术领域具有良好的应用前景。在高能球磨和固相烧结法制备(Mn,Fe)_(2)(P,Si)多晶样品的基础上,通过助溶剂法生长(Mn,Fe)_(2)(P,Si)单... Fe_(2)P型一级相变材料因其巨磁热效应和原材料丰富且低廉等特点,在室温磁制冷和磁热泵等新兴绿色环保技术领域具有良好的应用前景。在高能球磨和固相烧结法制备(Mn,Fe)_(2)(P,Si)多晶样品的基础上,通过助溶剂法生长(Mn,Fe)_(2)(P,Si)单晶,研究Fe_(2)P型(Mn,Fe)_(2)(P,Si)系列化合物的单晶生长工艺。利用扫描电镜(SEM)观察单晶微观形貌,用电子能谱(EDS)对单晶的化学成分进行定量分析,研究其化学成分对经过一级磁相变之后的微观组织结构的影响。结果表明,通过优化初始成分和制备工艺,可生长具有不同Mn∶Fe和P∶Si成分比例的单晶;发现Mn_(0.7)Fe_(1.31)P_(0.72)Si_(0.30)单晶在发生一级相变时的内应力最小,经过三次一级磁相变后仍保留原有形状。磁性测量结果表明,通过改变Si和Fe含量,可将一级相变引起的热滞从60 K降到10K左右,成功调控了(Mn,Fe)_(2)(P,Si)单晶的一级相变和微观组织结构。 展开更多
关键词 (Mn Fe)_(2)(p si)化合物 单晶生长 磁性 磁相变
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P-LaCe复合变质对过共晶Al-25%Si合金的变质效果
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作者 何红宇 石为喜 +3 位作者 滕海琳 林业达 茆俊 仇正 《辽宁科技学院学报》 2023年第6期1-3,77,共4页
文章分别采用1.0%LaCe、0.8%P以及1.0%LaCe-0.8%P复合变质对Al-25%Si合金进行变质处理,研究不同变质剂对Al-25%Si合金的变质效果。经变质处理后,Al-25%Si合金中的初晶硅都有着不同程度的细化作用,0.8%P的变质效果为最佳,初晶硅由未变质... 文章分别采用1.0%LaCe、0.8%P以及1.0%LaCe-0.8%P复合变质对Al-25%Si合金进行变质处理,研究不同变质剂对Al-25%Si合金的变质效果。经变质处理后,Al-25%Si合金中的初晶硅都有着不同程度的细化作用,0.8%P的变质效果为最佳,初晶硅由未变质的粗大的五瓣星状及其他较复杂形状转变为细的多边形状和板片状,平均晶粒尺寸由150μm~200μm细化至30μm~50μm,共晶硅以长针状分布,分布密度明显降低。单纯加1.0%LaCe处理后,合金中初晶硅形态上无变化,平均晶粒尺寸略有减小,共晶硅发生明显变化,从长针状变为颗粒状或短棒状,尺寸大幅减小。P-LaCe复合变质需控制好二者的添加量的配比,否则易产生过变质现象,降低变质效果。力学性能测试结果表明,经变质处理后的Al-25%Si合金的抗拉强度与硬度均不同程度增加,以0.8%P变质后的合金力学性能为最佳,与金相组织细化程度相对应。 展开更多
关键词 过共晶铝硅合金 LaCe变质 p变质 初晶硅
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Extended x-ray absorption fine structure study of MnFeP_(0.56)Si_(0.44) compound 被引量:3
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作者 李英杰 哈斯朝鲁 +4 位作者 乌仁图雅 宋志强 欧志强 特古斯 中井生央 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第8期444-449,共6页
The Mn Fe P0.56Si0.44 compound is investigated by x-ray diffraction, magnetic measurements, and x-ray absorption fine structure spectroscopy. It crystallizes in Fe2P-type structure with the lattice parameters a = b = ... The Mn Fe P0.56Si0.44 compound is investigated by x-ray diffraction, magnetic measurements, and x-ray absorption fine structure spectroscopy. It crystallizes in Fe2P-type structure with the lattice parameters a = b = 5.9823(0) and c = 3.4551(1) and undergoes a first-order phase transition at the Curie temperature of 255 K. The Fe K edge and Mn K edge x-ray absorption fine structure spectra show that Mn atoms mainly reside at 3g sites, while 3f sites are occupied by Fe atoms. The distances between the absorbing Fe atom and the first and second nearest neighbor Fe atoms in a 3f-layer shift from 2.65 and 4.01 in the ferromagnetic state to 2.61 and 3.96 in the paramagnetic phase. On the other hand, the distance between the 3g-layer and 3f-layer changes a little as 2.66 –2.73 below the Curie temperature and2.68 –2.75 above it. 展开更多
关键词 Mn Fe p0.56si0.44 compound Mn K edge Fe K edge EXAFS local structure
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Refinement of primary Si in Cu-50Si alloys with novel Al-Zr-P master alloy 被引量:5
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作者 Min Zuo Zhong-Shi Zhang +1 位作者 Xin-Ying Teng Hao-Ran Geng 《Rare Metals》 SCIE EI CAS CSCD 2013年第3期252-257,共6页
In this article, a novel Al-6Zr-2P master alloy with ZrP particles was successfully synthesized, and the refining performance of this novel master alloy for the primary Si in Cu-50Si alloys was also investigated. By m... In this article, a novel Al-6Zr-2P master alloy with ZrP particles was successfully synthesized, and the refining performance of this novel master alloy for the primary Si in Cu-50Si alloys was also investigated. By means of the fracture plane observation, it is found that the ZrP phase would precipitate first in the solidification pro- cess, and then, the ZrAl3 phase grows around them. Fur- thermore, it is observed that the refining effect can be remarkably improved by changing the addition sequence of the raw materials. After the melting of commercial Cu, the 2.0 wt% Al-6Zr-2P master alloy and crystalline Si were added in sequence, and the mean size of the primary Si in Cu-50Si alloy can be significantly refined from 255.7 to 75.3 gm. Meanwhile, the refining mechanism was dis- cussed in detail. 展开更多
关键词 Al-Zr-p master alloy Cu-si alloy ZRp Microstructure phase transformation
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Preparation of a halogen-free P/N/Si flame retardant monomer with reactive siloxy groups and its application in cotton fabrics 被引量:2
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作者 Peihua Zhao Kuankuan Xiong +1 位作者 Wentao Wang Yaqing Liu 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2017年第9期1322-1328,共7页
A novel halogen-free phosphorus–nitrogen–silicon flame retardant monomer with reactive siloxy groups,N-(diphenylphosphino)-1,1-diphenyl-N-(3-(triethoxysilyl)propyl) phosphinamine(DPTA) has been synthesized and was a... A novel halogen-free phosphorus–nitrogen–silicon flame retardant monomer with reactive siloxy groups,N-(diphenylphosphino)-1,1-diphenyl-N-(3-(triethoxysilyl)propyl) phosphinamine(DPTA) has been synthesized and was applied to the fire-resistant finishing of cotton fabrics. The molecular structure of DPTA has been well characterized by elemental analysis, FTIR,1H NMR, and ^(31)P NMR spectroscopies. The chemically-grafted cotton fabrics, which were treated with 25 wt% DPTA, were obtained and confirmed by attenuated total reflectance Fourier infrared spectroscopy(ATR-FTIR). The flame retardancy and thermal property of the treated samples were investigated by limited oxygen index(LOI), vertical flammability test(VFT), thermogravimetric analysis(TGA) and microscale combustion calorimeter(MCC). It is noted that in vertical flammability test, the treated samples extinguished immediately upon removing the ignition source, whereas the untreated one was completely burned out. Furthermore, TGA and MCC tests revealed that the treated samples produced a high char formation and a low heated release during combustion. The surface morphology of the untreated and treated samples and the char residues after LOI tests were observed by scanning electron microscopy(SEM). Therefore, all the results showed that the treated cotton fabrics with 25 wt% DPTA apparently improved the fireresistant and thermal performances. 展开更多
关键词 p/N/si flame retardant Synthesis Cotton fabrics Flame retardancy
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Resistive Switching Behavior of Ag/Mg0.2Zn0.8O/ZnMn2O4/p^+-Si Heterostructure Devices for Nonvolatile Memory Applications 被引量:1
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作者 韦长成 王华 +3 位作者 XU Jiwen ZHANG Yupei ZHANG Xiaowen YANG Ling 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2017年第1期29-32,共4页
The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^+-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties ... The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^+-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_(HRS)/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current(SCLC).The devices exhibit good durability under 1×10^3cycles and the degradation is invisible for more than 10^6 s. 展开更多
关键词 HETEROSTRUCTURE Ag/Mg0.2Zn0.8O/ZnMn2O4/p^+-si DEVICES resistive switching properties
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Transport and electroluminescence mechanism in Au/(Si/SiO_2)/P-Si film 被引量:1
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作者 ZHANG Kai-biao MA Shu-yi MA Zi-jun CHEN Hai-xia 《Optoelectronics Letters》 EI 2006年第1期48-50,共3页
The samples of Au/(Si/SiO2 )/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra... The samples of Au/(Si/SiO2 )/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra by using the Configuration Coordinate as a theoretical model. The result indicates that there are two defect centers in SiO2 films. The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film. 展开更多
关键词 光致发电 硅薄膜 Au/(si/siO2 )/p-si 磁电管 电子散射
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INTERGRANULAR CORROSION AND PHOSPHOR SEGREGATION AT GRAIN BOUNDAR1FS OF NON-SENSITIZED SUPERPURE AUSTENITIC STAINLESS STEEL 00Cr25Ni22Mo2N
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作者 FANG Yaohua Nanjing Institute of Chemical Technology,Nanjing,ChinaXU Yuan ZHANG Wenqi University of Science and Technology Beijing,Beijing,China FANG Yaohua Associate Professor,Dept.of Applied Chemistry,Nanjing Institute of Chemical Technology,Nanjing 210009,China 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1990年第9期156-160,共5页
The corrosion behaviour and mechanism of superpure austenitic stainless steel 00Cr25Ni22Mo2N in urea processing environment was studied using metallography,SEM, TEM,SIMS and AES techniques.The results show that the ga... The corrosion behaviour and mechanism of superpure austenitic stainless steel 00Cr25Ni22Mo2N in urea processing environment was studied using metallography,SEM, TEM,SIMS and AES techniques.The results show that the gas extraction tube made of non-sensitized 00Cr25Ni22Mo2N steel suffered intergranular corrosion.Corrosive media penetrated not only into the tube wall through grain boundaries but also expanded from the boundary towards the interior of the grain.Neither depletion of Cr nor precipitates were found at the grain boundaries.However,P(and Si)was segregated at the grain boundaries to a great extent.Semiquantitative calculation indicates that the P content at the grain boundaries is about 25 wt-%,three orders of magnitude higher than the content within the grain.Sugges- tion is made that the potential difference between the grain and its boundary due to the segre- gation results in the observed intergranular corrosion. 展开更多
关键词 superpure austenitic stainless steel intergranular corrosion p(si)segregation
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