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A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design
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作者 陈志刚 张杨 +4 位作者 罗卫军 张仁平 杨富华 王晓亮 李晋闽 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第9期1654-1656,共3页
We propose and fabricate an A1GaN/GaN high electron mobility transistor (HEMT) on sapphire substrate using a new kind of electron beam (EB) lithography layout for the T-gate. Using this new layout,we can change th... We propose and fabricate an A1GaN/GaN high electron mobility transistor (HEMT) on sapphire substrate using a new kind of electron beam (EB) lithography layout for the T-gate. Using this new layout,we can change the aspect ratio (ratio of top gate dimension to gate length) and modify the shape of the T-gate freely. Therefore, we obtain a 0.18μm gate-length AlGaN/GaN HEMT with a unity current gain cutoff frequency (fT) of 65GHz. The aspect ratio of the T-gate is 10. These single finger devices also exhibit a peak extrinsic transconductance of 287mS/mm and a maximum drain current as high as 980mA/mm. 展开更多
关键词 GAN HEMt t-GAtE layout
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Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter
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作者 苏树兵 刘训春 +4 位作者 刘新宇 于进勇 王润梅 徐安怀 齐鸣 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第3期434-437,共4页
A self-aligned InP/GalnAs single heterojunction bipolar transistor(HBT) is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge ar... A self-aligned InP/GalnAs single heterojunction bipolar transistor(HBT) is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V, and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz, These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications. 展开更多
关键词 self-alignment emitters InP single heterojunction bipolar transistor t-shaped emitter U-shaped emitter layout
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纸机PLC的故障判断与处理
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作者 夏启强 《造纸科学与技术》 2007年第4期47-49,共3页
本文以华丰纸业有限公司九号机PLC系统为例,讲述了纸机PLC几种常见的故障判断与处理的方法。着重介绍了一起由编码器引起的通讯故障的处理过程。通过对纸机故障的及时处理,减少了纸机停机时间,保证了生产的正常运行。
关键词 PLC故障诊断 t形图 编码器
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