A Generalized Array Factor for Time-Modulated Hexagonal Based Antenna Array Geometry With Novel Trapezoidal Switching

The concept of the time-modulated array has been emerging as an alternative to the complex phase shifters,which lowers the cost of the array feeding network due to the utilization of radio frequency(RF)switches.The various forms of hexagonal antenna array geometries can be used for applications like surveillance tracking in phased array radar and wireless communication systems.This work proposes the generalized array factor(AF)for the hexagonal antenna array geometry based on time modulation.The time modulation in generalized hexagonal geometry can maintain the fixed static amplitude excitation,giving more flexibility over time.Furthermore,a novel trapezoidal switching function is also proposed and applied to the generalized array factor to enable future researchers to use this array factor in the field of advancement to observe how switching schemes like trapezoidal and rectangular affect the array pattern's side lobe level(SLL).The generalized equation can be utilized for the analysis and synthesis of radiation characteristics of the time-modulated hexagonal array(TMHA),time-modulated concentric hexagonal array(TMCHA),time-modulated hexagonal cylindrical array(TMHCA),and time-modulated hexagonal concentric cylindrical array(TMHCCA).The numerical result illustrates the generation of AF of time-modulated hexagonal structures and also shows that the trapezoidal switching sequence outperforms the rectangular switch using the cat swarm optimization(CSO)approach.

Porous heterostructure of graphene/hexagonal boron nitride as an efficient electrocatalyst for hydrogen peroxide generation

Compared with the traditional heteroatom doping,employing heterostructure is a new modulating approach for carbon-based electrocatalysts.Herein,a facile ball milling-assisted route is proposed to synthesize porous carbon materials composed of abundant graphene/hexagonal boron nitride(G/h-BN)heterostructures.Metal Ni powder and nanoscale h-BN sheets are used as a catalytic substrate/hard template and“nucleation seed”for the formation of the heterostructure,respectively.As-prepared G/h-BN heterostructures exhibit enhanced electrocatalytic activity toward H_(2)O_(2) generation with 86%-95%selectivity at the range of 0.45-0.75 V versus reversible hydrogen electrode(RHE)and a positive onset potential of 0.79 versus RHE(defined at a ring current density of 0.3 mA cm^(-2))in the alkaline solution.In a flow cell,G/h-BN heterostructured electrocatalyst has a H_(2)O_(2) production rate of up to 762 mmol g_(catalyst)^(-1) h^(-1) and Faradaic efficiency of over 75%during 12 h testing,superior to the reported carbon-based electrocatalysts.The density functional theory simulation suggests that the B atoms at the interface of the G/h-BN heterostructure are the key active sites.This research provides a new route to activate carbon catalysts toward highly active and selective O_(2)-to-H_(2)O_(2) conversion.

High-Throughput Growth of Hexagonal Boron Nitride Film Using Porous-Structure Isolation Layer

Chemical vapor deposition is considered as the most hopeful method for the synthesis of large-area high-quality hexagonal boron nitride on the substrate of catalytic metal. However, the size the hexagonal boron nitride films are limited to the size of growth chamber, which indicates a lower production efficiency. In this paper, the utilization efficiency of growth chamber is highly improved by alternately stacking multiple pieces of Cu foils and carbon fiber surface felt with porous structure. Uniform and continuous hexagonal boron nitride films are prepared on Cu foils through chemical vapor deposition utilizing ammonia borane as the precursor. This work develops a simple and practicable method for high-throughput preparation of hexagonal boron nitride films, which could contribute to the industrial application of hexagonal boron nitride. .

Dynamic behavior of outburst two-phase flow in a coal mine T-shaped roadway:The formation of impact airflow and its disaster-causing effect

The study of the dynamic disaster mechanism of coal and gas outburst two-phase flow is crucial for improving disaster reduction and rescue ability of coal mine outburst accidents.An outburst test in a T-shaped roadway was conducted using a self-developed large-scale outburst dynamic disaster test system.We investigated the release characteristics of main energy sources in coal seam,and obtained the dynamic characteristics of outburst two-phase flow in a roadway.Additionally,we established a formation model for outburst impact flow and a model for its flow in a bifurcated structure.The results indicate that the outburst process exhibits pulse characteristics,and the rapid destruction process of coal seam and the blocking state of gas flow are the main causes of the pulse phenomenon.The outburst energy is released in stages,and the elastic potential energy is released in the vertical direction before the horizontal direction.In a straight roadway,the impact force oscillates along the roadway.With an increase in the solid–gas ratio,the two-phase flow impact force gradually increases,and the disaster range extends from the middle of the roadway to the coal seam.In the area near the coal seam,the disaster caused by the two-phase flow impact is characterized by intermittent recovery.In a bifurcated roadway,the effect of impact airflow on impact dynamic disaster is much higher than that of two-phase flow,and the impact force tends to weaken with increasing solid-gas ratio.The impact force is asymmetrically distributed;it is higher on the left of the bifurcated roadway.With an increase in the solid-gas ratio,the static pressure rapidly decreases,and the bifurcated structure accelerates the attenuation of static pressure.Moreover,secondary acceleration is observed when the shock wave moves along the T-shaped roadway,indicating that the bifurcated structure increases the shock wave velocity.

Thermal-induced interfacial behavior of a thin one-dimensional hexagonal quasicrystal film

In this paper,we investigate the interfacial behavior of a thin one-dimensional(1D)hexagonal quasicrystal(QC)film bonded on an elastic substrate subjected to a mismatch strain due to thermal variation.The contact interface is assumed to be nonslipping,with both perfectly bonded and debonded boundary conditions.The Fourier transform technique is adopted to establish the integral equations in terms of interfacial shear stress,which are solved as a linear algebraic system by approximating the unknown phonon interfacial shear stress via the series expansion of the Chebyshev polynomials.The expressions are explicitly obtained for the phonon interfacial shear stress,internal normal stress,and stress intensity factors(SIFs).Finally,based on numerical calculations,we briefly discuss the effects of the material mismatch,the geometry of the QC film,and the debonded length and location on stresses and SIFs.

Elastic Field of a Straight Dislocation in One Dimensional Hexagonal Quasicrystals *L

Aim To study dislocation elasticity theory in quasicrystals. Methods A dislocation was separated into pure edge part and pure screw part and their superposition was used to find the elastic field. Results and Conclusion The elastic solution of a straight dislocation parallel to the quasiperiodic axis in 1D hexagonal quasicrystals was obtained and the generalized Peach Koehler force on a dislocation in quasicrystals was given.

Influences of fillet radius and draft angle on local loading process of titanium alloy T-shaped components

In order to study influences of geometric parameters on the T-shaped components local loading process, a new mathematical model considering the fillet radius and draft angle was established by using the slab method. The results obtained by the mathematical model agree with the data form experiment and numerical simulation, and the results are closer to the experimental and simulation results. The influence of draft angle may be neglected under the forming conditions used. The influence of fillet radius is notable, especially in the case that the ratio of fillet radius to rib width is less than 0.75.

Synthesis and photoluminescence properties of single-crystal ZnO hexagonal pyramids by PEG400-assisted thermal decomposition route

Large-scale synthesis of ZnO hexagonal pyramids was achieved by a simple thermal decomposition route of precursor at 240 oC in the presence of PEG400. The precursor was obtained by room-temperature solid-state grinding reaction between Zn（CH3COO）2-2H2O and Na2CO3. Crystal structure and morphology of the products were analyzed and characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and high-resolution transmission electron microscopy （HRTEM）. The results of further experiments show that PEG400 has an important role in the formation of ZnO hexagonal pyramids. Difference between the single and double hexagonal pyramid structure may come from the special thermal decomposition reaction. The photoluminescence （PL） spectra of ZnO hexagonal pyramids exhibit strong near-band-edge emission at about 386 nm and weak green emission at about 550 nm. The Raman-active vibration at about 435 cm-1 suggests that the ZnO hexagonal pyramids have high crystallinity.

Super Performance InGaP/GaAs Heterojunction Bipolar Transistor with Hexagonal Emitter

Super performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with hexagonal emitter are described.The fabricated HBT shows excellent DC characteristics with low V CE offset voltage (<0 15V) and low knee voltage (<0 5V).Over 14V of the collector base breakdown voltage BV CBO and over 9V of the collector emitter breakdown voltage BV CEO are obtained.For a self aligned InGaP/GaAs HBT with 2μm×10μm emitter area,the f T is extrapolated to 92GHz and f max is extrapolated to 105GHz.These great values are obtained due to the hexagonal emitter and laterally etched undercut (LEU) of collector,indicating the great potential of InGaP/GaAs HBTs for high speed digital circuit and microwave power applications.

Simulation on damage effectiveness of hexagonal prism aimable warhead with multi-point synchronous initiations

In order to study the impacts of warhead geometry and initiation pattern on the lethality of aimable warhead, multi-point synchronous initiated hexagonal prism and cylindrical warheads were compared through numerical simulation, combined with theoretical formulas of fragment decelera- tion and target plugging. Enhancements of fragment velocity, kinetic energy and density toward the target and target destructions were analyzed. The results show that hexagonal prism warhead can produce dense fragment beams and enhance average velocity and kinetic energy with asymmetric eight-point initiation by 24. 13% and 54. 52% respectively, which are higher than those of the isomet- ric or same weight cylindrical warhead. The effective fragments are still relatively concentrated in an area of 8 m × 2 m for the hexagonal prism warhead when the distance between warhead and target is 40 m.

Hexagonal boron nitride adsorbent: Synthesis, performance tailoring and applications

Hexagonal boron nitride(h-BN),with unique structural and properties,has shown enormous potentitoward variety of possible applications.By virtue of partially-ionic character of BN chemical bonds anusually large specific surface area,h-BN-related nanostructures exhibit appealing adsorption propertiewhich can be widely applied for separation and purification towards energy and environment treatmenIn this review,recent progress in designing h-BN micro,nano-structure,controlled synthesis,performancoptimizing as well as energy and environment-related adsorption applications are summarized.Strategieto tailor the h-BN can be classified as morphology control,element doping,defect control and surfacmodification,focusing on how to optimize the adsorption performance.In order to insight the intrinsimechanism of tuning strategies for property optimization,the significant adsorption applications of h-Btowards hydrogen storage,CO2 capture,pollutants removal from water and adsorption desulfurization arpresented.

Exact analytic solutions for an elliptic hole with asymmetric collinear cracks in a one-dimensional hexagonal quasi-crystal

Using the complex variable function method and the technique of conformal mapping, the anti-plane shear problem of an elliptic hole with asymmetric colfinear cracks in a one-dimensional hexagonal quasi-crystal is solved, and the exact analytic solutions of the stress intensity factors （SIFs） for mode Ⅲ problem are obtained. Under the limiting conditions, the present results reduce to the Griffith crack and many new results obtained as well, such as the circular hole with asymmetric collinear cracks, the elliptic hole with a straight crack, the mode T crack, the cross crack and so on. As far as the phonon field is concerned, these results, which play an important role in many practical and theoretical applications, are shown to be in good agreement with the classical results.

The interaction between a screw dislocation and a wedge-shaped crack in one-dimensional hexagonal piezoelectric quasicrystals

Based on the fundamental equations of piezoelasticity of quasicrystal material,we investigated the interaction between a screw dislocation and a wedge-shaped crack in the piezoelectricity of one-dimensional hexagonal quasicrystals.Explicit analytical solutions are obtained for stress and electric displacement intensity factors of the crack,as well as the force on dislocation.The derivation is based on the conformal mapping method and the perturbation technique.The influences of the wedge angle and dislocation location on the image force are also discussed.The results obtained in this paper can be fully reduced to some special cases already available or deriving new ones.

Crushing analysis and multi-objective optimization of bitubular hexagonal columns with ribs

In order to improve the crashworthiness of thin-walled columns, the energy absorption characteristics of three columns under quasi-static axial crushing loads were analyzed through LS-DYNA. Numerical results show that the energy absorption capability of the bitubular hexagonal columns with middle to middle(MTM) ribs is the best, followed by the bitubular hexagonal columns with corner to corner(CTC) ribs and the bitubular hexagonal columns without(NOT) ribs, respectively. Then, the MTM rib was optimized by using multi-objective particle swarm optimization algorithm. Through the analysis of the Pareto front for specific energy absorption(SEA, A_(se)) and peak crushing force(PCF, F_(pc)), it is found that there is a vertex on the Pareto front. The vertex has the design parameters of t_1=1.2 mm, t_2=1.2 mm, A_(se)=11.3729 k J/kg, F_(pc)=235.8491 kN. When the PCF is in a certain size, on the left of the vertex, the point with t_2=1.2 mm has the biggest SEA, meanwhile on the right of the vertex, the point with t_1=1.2 mm has the biggest SEA. Finally, the global sensitivity analysis was conducted to investigate the effect of two design parameters. The result is obtained that both SEA and PCF for MTM are more sensitive to t_1 rather than t_2 in the design domain.

Characterization of a Y-type hexagonal ferrite-based frequency tunable microwave absorber

A Y-type hexaferrite rod with the composition of Ba2COl.8Cuo.2Fe12022 was presented as an absorbing material with high absorb- anee. Its high absorbance and wide absorption band result from ferromagnetic resonance （FMR） that is self-biased by strong shape and mag- netocrystaUine anisotropy fields. Around the FMR frequency the specimen of the ferrite rods exhibits very high absorbance and the FMR frequency can be tuned by the rod dimension. In addition to the high absorbance and the wide tunable absorption band, the microwave ab- sorber has another advantage of light weight due to the use of the ferrite rods instead of ferrite slabs.

Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter

A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V, and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz, These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications.

A study of transition from n-to p-type based on hexagonal WO3 nanorods sensor

Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 ℃ using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods are studied by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive spectroscopy. It is found that the agglomeration of the nanorods is strongly dependent on the PH value of the reaction solution. Uniform and isolated WO3 nanorods with diameters ranging from 100 nm-150 nm and lengths up to several micrometers are obtained at PH = 2.5 and the nanorods are identified as being hexagonal in phase structure. The sensing characteristics of the WO3 nanorod sensor are obtained by measuring the dynamic response to NO2 with concentrations in the range 0.5 ppm-5 ppm and at working temperatures in the range 25 ℃-250 ℃. The obtained WO3 nanorods sensors are found to exhibit opposite sensing behaviors, depending on the working temperature. When being exposed to oxidizing NO2 gas, the WO3 nanorod sensor behaves as an n-type semiconductor as expected when the working temperature is higher than 50 ℃, whereas, it behaves as a p-type semiconductor below 50 ℃. The origin of the n- to p-type transition is correlated with the formation of an inversion layer at the surface of the WO3 nanorod at room temperature. This finding is useful for making new room temperature NO2 sensors based on hexagonal WO3 nanorods.

Improved design of special boundary elements for T-shaped reinforced concrete walls

This study examines the design provisions of the Chinese GB 50011-2010 code for seismic design of buildings for the special boundary elements of T-shaped reinforced concrete walls and proposes an improved design method. Comparison of the design provisions of the GB 50011-2010 code and those of the American code ACI 318-14 indicates a possible deficiency in the T-shaped wall design provisions in GB 50011-2010. A case study of a typical T-shaped wall designed in accordance with GB 50011-2010 also indicates the insufficient extent of the boundary element at the non-flange end and overly conservative design of the flange end boundary element. Improved designs for special boundary elements ofT-shaped walls are developed using a displacement-based method. The proposed design formulas produce a longer boundary element at the non-flange end and a shorter boundary element at the flange end, relative to those of the GB 50011-2010 provisions. Extensive numerical analysis indicates that T-shaped walls designed using the proposed formulas develop inelastic drift of 0.01 for both cases of the flange in compression and in tension.

TIME-HARMONIC DYNAMIC GREEN'S FUNCTIONS FOR ONE-DIMENSIONAL HEXAGONAL QUASICRYSTALS

Quasicrystals have additional phason degrees of freedom not found in conventional crystals. In this paper, we present an exact solution for time-harmonic dynamic Green＇s function of one-dimensional hexagonal quasicrystals with the Laue classes 6/mh and 6/mhmm. Through the introduction of two new functions φ and ψ, the original problem is reduced to the determination of Green＇s functions for two independent Helmholtz equations. The explicit expressions of displacement and stress fields are presented and their asymptotic behaviors are discussed. The static Green＇s function can be obtained by letting the circular frequency approach zero.

Vibration of two-dimensional hexagonal boron nitride

The dynamic behavior of two-dimensional nanostructures is important to the future application of nano devices. The vibrational behaviors of single-layered hexagonal boron nitride(h-BN) are studied by molecular dynamics simulation and continuum plate model. The bending stiffness and Poisson’s ratios of h-BN along zigzag direction and armchair direction are calculated. H-BN is softer compared with graphene. The continuum plate model can predict the vibration of h-BN with four edge-clamped boundary conditions well. The electric fields in different directions have obvious influence on the vibration of h-BN. The natural frequency of h-BN changes linearly with the electric field intensity along the polarization direction. The natural frequency of h-BN decreases with the increase of electric field intensity along both positive and negative nonpolarization direction. While the natural frequency of h-BN increases with the increase of electric field intensity along both positive and negative transverse electric field.