A new trench gate IGBT structure with a floating P region is proposed,which introduces a floating P region into the trench accumulation layer controlled IGBT（TAC-IGBT）.The new structure maintains a low on-state volt...A new trench gate IGBT structure with a floating P region is proposed,which introduces a floating P region into the trench accumulation layer controlled IGBT（TAC-IGBT）.The new structure maintains a low on-state voltage drop and large forward biased safe operating area（FBSOA） of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage.In addition,it enlarges the short circuit safe operating area（SCSOA） of the TAC-IGBT,and is simple in fabrication and design.Simulation results indicate that,for IGBT structures with a breakdown voltage of 1200 V,the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT.展开更多
文摘A new trench gate IGBT structure with a floating P region is proposed,which introduces a floating P region into the trench accumulation layer controlled IGBT（TAC-IGBT）.The new structure maintains a low on-state voltage drop and large forward biased safe operating area（FBSOA） of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage.In addition,it enlarges the short circuit safe operating area（SCSOA） of the TAC-IGBT,and is simple in fabrication and design.Simulation results indicate that,for IGBT structures with a breakdown voltage of 1200 V,the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT.
