In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly impro...In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec.展开更多
Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhi...Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy(STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.展开更多
The soil chemistry of gallium, indium, and thallium is not well defined, particularly with emerging evidence that these elements have toxic properties and may influence food safety. The purpose of this investigation w...The soil chemistry of gallium, indium, and thallium is not well defined, particularly with emerging evidence that these elements have toxic properties and may influence food safety. The purpose of this investigation was to estimate the soil concentrations of gallium, indium, and thallium and determine if these elements have a soil chemistry like aluminum and therefore demonstrate significant concentration correlations with aluminum. Twenty-seven soil series were selected, and the elemental concentrations were determined using aqua regia digestion with analytical determination performed using inductively coupled plasma emission-mass spectroscopy. The concentrations of gallium, indium, and thallium generally compared with the known literature. Aluminum-gallium and aluminum-thallium exhibited significant concentration correlations across the soil horizons of the sampled soils. Aluminum, gallium, and thallium did demonstrate concentration increases in soil horizons having illuviation of phyllosilicates, implying these phyllosilicates have adsorption and isomorphic substitution behaviors involving these elements.展开更多
The anisotropic properties and applications ofβ-gallium oxide(β-Ga_(2)O_(3))are comprehensively reviewed.All the anisotropic properties are essentially resulted from the anisotropic crystal structure.The process flo...The anisotropic properties and applications ofβ-gallium oxide(β-Ga_(2)O_(3))are comprehensively reviewed.All the anisotropic properties are essentially resulted from the anisotropic crystal structure.The process flow of how to exfoliate nanoflakes from bulk material is introduced.Anisotropic optical properties,including optical bandgap,Raman and photolumines-cence characters are comprehensively reviewed.Three measurement configurations of angle-resolved polarized Raman spec-tra(ARPRS)are reviewed,with Raman intensity formulas calculated with Raman tensor elements.The method to obtain the Raman tensor elements of phonon modes through experimental fitting is also introduced.In addition,the anisotropy in elec-tron mobility and affinity are discussed.The applications,especially polarization photodetectors,based onβ-Ga_(2)O_(3)were summa-rized comprehensively.Three kinds of polarization detection mechanisms based on material dichroism,1D morphology and metal-grids are discussed in-depth.This review paper provides a framework for anisotropic optical and electric properties ofβ-Ga_(2)O_(3),as well as the applications based on these characters,and is expected to lead to a wider discussion on this topic.展开更多
In the era of accelerated development in artificial intelligence as well as explosive growth of information and data throughput,underlying hardware devices that can integrate perception and memory while simultaneously...In the era of accelerated development in artificial intelligence as well as explosive growth of information and data throughput,underlying hardware devices that can integrate perception and memory while simultaneously offering the bene-fits of low power consumption and high transmission rates are particularly valuable.Neuromorphic devices inspired by the human brain are considered to be one of the most promising successors to the efficient in-sensory process.In this paper,a homojunction-based multi-functional optoelectronic synapse(MFOS)is proposed and testified.It enables a series of basic electri-cal synaptic plasticity,including paired-pulse facilitation/depression(PPF/PPD)and long-term promotion/depression(LTP/LTD).In addition,the synaptic behaviors induced by electrical signals could be instead achieved through optical signals,where its sen-sitivity to optical frequency allows the MFOS to simulate high-pass filtering applications in situ and the perception capability integrated into memory endows it with the information acquisition and processing functions as a visual system.Meanwhile,the MFOS exhibits its performances of associative learning and logic gates following the illumination with two different wave-lengths.As a result,the proposed MFOS offers a solution for the realization of intelligent visual system and bionic electronic eye,and will provide more diverse application scenarios for future neuromorphic computing.展开更多
Liquid metal gallium has been widely used in numerous fields, from nuclear engineering, catalysts, and energy storage to electronics owing to its remarkable thermal and electrical properties along with low viscosity a...Liquid metal gallium has been widely used in numerous fields, from nuclear engineering, catalysts, and energy storage to electronics owing to its remarkable thermal and electrical properties along with low viscosity and nontoxicity. Compared with high-temperature liquid metals, room-temperature liquid metals, such as gallium(Ga), are emerging as promising alternatives for fabricating advanced energy storage devices, such as phase change materials, by harvesting the advantageous properties of their liquid state maintained without external energy input. However, the thermal and electrical properties of liquid metals at the phase transition are rather poorly studied, limiting their practical applications. In this study, we reported on the physical properties of the solid–liquid phase transition of Ga using a custom-designed, solid–liquid electrical and thermal measurement system. We observed that the electrical conductivity of Ga progressively decreases with an increase in temperature. However, the Seebeck coefficient of Ga increases from 0.2 to 2.1 μV/K, and thermal conductivity from 7.6 to 33 W/(K·m). These electrical and thermal properties of Ga at solid–liquid phase transition would be useful for practical applications.展开更多
基金supported by the Key Research and Development Program of Jilin Provincial Department of Science and Technology (No. 20210201031GX)Innovation capacity building project of Jilin Province (No. 2023C031-2)The Key Research and Development Program of Jiangsu Province (No. BE2022057-1)。
文摘In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.11874304 and 11574253)。
文摘Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy(STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.
文摘The soil chemistry of gallium, indium, and thallium is not well defined, particularly with emerging evidence that these elements have toxic properties and may influence food safety. The purpose of this investigation was to estimate the soil concentrations of gallium, indium, and thallium and determine if these elements have a soil chemistry like aluminum and therefore demonstrate significant concentration correlations with aluminum. Twenty-seven soil series were selected, and the elemental concentrations were determined using aqua regia digestion with analytical determination performed using inductively coupled plasma emission-mass spectroscopy. The concentrations of gallium, indium, and thallium generally compared with the known literature. Aluminum-gallium and aluminum-thallium exhibited significant concentration correlations across the soil horizons of the sampled soils. Aluminum, gallium, and thallium did demonstrate concentration increases in soil horizons having illuviation of phyllosilicates, implying these phyllosilicates have adsorption and isomorphic substitution behaviors involving these elements.
基金supported by the National Natural Science Foundation of China(Grant No.61505109)Youth Innovative Talents Attracting and Cultivating Plan of Colleges and Universities in Shandong Province(No.21)+1 种基金Youth Innovation Team of colleges and universities in Shandong Province(Grant No.2022KJ223)Shandong Provincial Natural Science Foundation(Grant No.ZR2021QF020).
文摘The anisotropic properties and applications ofβ-gallium oxide(β-Ga_(2)O_(3))are comprehensively reviewed.All the anisotropic properties are essentially resulted from the anisotropic crystal structure.The process flow of how to exfoliate nanoflakes from bulk material is introduced.Anisotropic optical properties,including optical bandgap,Raman and photolumines-cence characters are comprehensively reviewed.Three measurement configurations of angle-resolved polarized Raman spec-tra(ARPRS)are reviewed,with Raman intensity formulas calculated with Raman tensor elements.The method to obtain the Raman tensor elements of phonon modes through experimental fitting is also introduced.In addition,the anisotropy in elec-tron mobility and affinity are discussed.The applications,especially polarization photodetectors,based onβ-Ga_(2)O_(3)were summa-rized comprehensively.Three kinds of polarization detection mechanisms based on material dichroism,1D morphology and metal-grids are discussed in-depth.This review paper provides a framework for anisotropic optical and electric properties ofβ-Ga_(2)O_(3),as well as the applications based on these characters,and is expected to lead to a wider discussion on this topic.
基金supported by the National Natural Science Foundation of China under Grant(62174068,61625404).
文摘In the era of accelerated development in artificial intelligence as well as explosive growth of information and data throughput,underlying hardware devices that can integrate perception and memory while simultaneously offering the bene-fits of low power consumption and high transmission rates are particularly valuable.Neuromorphic devices inspired by the human brain are considered to be one of the most promising successors to the efficient in-sensory process.In this paper,a homojunction-based multi-functional optoelectronic synapse(MFOS)is proposed and testified.It enables a series of basic electri-cal synaptic plasticity,including paired-pulse facilitation/depression(PPF/PPD)and long-term promotion/depression(LTP/LTD).In addition,the synaptic behaviors induced by electrical signals could be instead achieved through optical signals,where its sen-sitivity to optical frequency allows the MFOS to simulate high-pass filtering applications in situ and the perception capability integrated into memory endows it with the information acquisition and processing functions as a visual system.Meanwhile,the MFOS exhibits its performances of associative learning and logic gates following the illumination with two different wave-lengths.As a result,the proposed MFOS offers a solution for the realization of intelligent visual system and bionic electronic eye,and will provide more diverse application scenarios for future neuromorphic computing.
基金the support provided by A*STAR and the Industry Alignment Fund through the Pharos “Hybrid thermoelectric materials for ambient applications” Program (No.1527200021)。
文摘Liquid metal gallium has been widely used in numerous fields, from nuclear engineering, catalysts, and energy storage to electronics owing to its remarkable thermal and electrical properties along with low viscosity and nontoxicity. Compared with high-temperature liquid metals, room-temperature liquid metals, such as gallium(Ga), are emerging as promising alternatives for fabricating advanced energy storage devices, such as phase change materials, by harvesting the advantageous properties of their liquid state maintained without external energy input. However, the thermal and electrical properties of liquid metals at the phase transition are rather poorly studied, limiting their practical applications. In this study, we reported on the physical properties of the solid–liquid phase transition of Ga using a custom-designed, solid–liquid electrical and thermal measurement system. We observed that the electrical conductivity of Ga progressively decreases with an increase in temperature. However, the Seebeck coefficient of Ga increases from 0.2 to 2.1 μV/K, and thermal conductivity from 7.6 to 33 W/(K·m). These electrical and thermal properties of Ga at solid–liquid phase transition would be useful for practical applications.
基金financially supported by the National Key Research and Development Project of China (Nos. 2021YFC2902802, 2021YFC2902805, 2021YFC2902602, 2021YFC2902604)the Natural Science Foundation of Guangdong Province,China (No. 2023A1515030145)Guangdong Academy of Science Special Funds,China (Nos. 2020GDASYL-0104027, 2022GDASZH-2022010104, 2021GDASYL-20210302004)。
