An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O（IGZO） thin-film transistors is developed. The model is developed based on the s...An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O（IGZO） thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.展开更多
This paper proposes an equivalent circuit model to analyze the reason for the dispersion of sub-threshold current （also known as zero-current point dispersion） in organic thin-film transistors. Based on the level 61...This paper proposes an equivalent circuit model to analyze the reason for the dispersion of sub-threshold current （also known as zero-current point dispersion） in organic thin-film transistors. Based on the level 61 amorphous silicon thin-film transistor model in star-HSPICE, the results from our equivalent circuit model simulation reveal that zero-current point dispersion can be attributed to two factors： large contact resistance and small gate resistance. Furthermore, it is found that decreasing the contact resistance and increasing the gate resistance can efficiently reduce the dispersion. If the contact resistance can be controlled to 0 g2, all the zero-current points can gather together at the base point. A large gate resistance is good for constraining the dispersion of the zero-current points and gate leakage. The variances of the zero-current points are 0.0057 and nearly 0 when the gate resistances are 17 MΩ and 276 MΩ, respectively.展开更多
文摘An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O（IGZO） thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.
文摘This paper proposes an equivalent circuit model to analyze the reason for the dispersion of sub-threshold current （also known as zero-current point dispersion） in organic thin-film transistors. Based on the level 61 amorphous silicon thin-film transistor model in star-HSPICE, the results from our equivalent circuit model simulation reveal that zero-current point dispersion can be attributed to two factors： large contact resistance and small gate resistance. Furthermore, it is found that decreasing the contact resistance and increasing the gate resistance can efficiently reduce the dispersion. If the contact resistance can be controlled to 0 g2, all the zero-current points can gather together at the base point. A large gate resistance is good for constraining the dispersion of the zero-current points and gate leakage. The variances of the zero-current points are 0.0057 and nearly 0 when the gate resistances are 17 MΩ and 276 MΩ, respectively.
