This review paper gives an outline of the recent research progress and challenges of 2D TMDs material MoS2 based device, that leads to an interesting path towards approaching the electronic applications due to its siz...This review paper gives an outline of the recent research progress and challenges of 2D TMDs material MoS2 based device, that leads to an interesting path towards approaching the electronic applications due to its sizeable band gap. This review presents the improvement of MoS2 material as an alternate to a silicon channel in a transistor with its excellent energy band gap, thermal conductivity, and exclusive physical properties that are expected to draw attention to focusing on semiconducting devices for most futuristic applications. We discuss the band structure of MoS2 for a different number of layers with its structure, and various synthesis techniques of the MoS2 layer are also reviewed. The MoS2 based field effect transistor has attracted a great deal of attention due to its excellent properties such as mobility, on/off current ratio, and maximum on-current of the devices. The transition of mobility as a function of temperature and thickness dependence are also discussed. However, the mobility of MoS_2 material is large in bulk form and lower in monolayer form. The use of a high-k gate dielectric in MoS2 FET is used to enhance the mobility of the device. Different metal contact engineering and different doping techniques were deployed to achieve low contact resistance. This review paper focuses on various aspects of layered TMDs material MoS2 based field effect transistors.展开更多
2D SnS_2 nanosheets are exfoliated by micromechanical exfoliation technique from SnS_2 single crystals which are synthesized by CVT methods.Monolayer SnS_2 nanosheet has been obtained and the Raman spectrum shows that...2D SnS_2 nanosheets are exfoliated by micromechanical exfoliation technique from SnS_2 single crystals which are synthesized by CVT methods.Monolayer SnS_2 nanosheet has been obtained and the Raman spectrum shows that A_（1g） mode of monolayer SnS_2 shows a slight softening compared with bulk SnS_2 single crystal.The field effect transistors（FETs） based on multilayer SnS_2 nanosheets have been fabricated,of which the electrical and photoelectrical properties have been measured.Under dark condition,with V_（sd） of 1 V,our SnS_2 FET shows n-type behavior.The carrier mobility of the FETs reach 3.51 cm^2V^（-1）s^（-1） and the ‘ON/OFF’ ratio is about 5×10~2.The SnS_2 FET is also illuminated under 532 nm laser with the power of 500 m W/cm^2.The light absorption causes an increment of carrier mobility（from 3.51 cm^2V^（-1）s^（-1） under dark condition to 3.85 cm^2V^（-1）s^（-1） under 532 nm laser illumination with the power of 500 m W/cm^2/ of SnS_2.The responsivity（R） and detectivity of our multilayer device under 500 m W/cm^2532 nm is 2.08 A/W and 6×10~6 J,respectively.All the above properties indicate the potential of SnS_2 nanosheets to be used as FETs and phototransistors.展开更多
文摘This review paper gives an outline of the recent research progress and challenges of 2D TMDs material MoS2 based device, that leads to an interesting path towards approaching the electronic applications due to its sizeable band gap. This review presents the improvement of MoS2 material as an alternate to a silicon channel in a transistor with its excellent energy band gap, thermal conductivity, and exclusive physical properties that are expected to draw attention to focusing on semiconducting devices for most futuristic applications. We discuss the band structure of MoS2 for a different number of layers with its structure, and various synthesis techniques of the MoS2 layer are also reviewed. The MoS2 based field effect transistor has attracted a great deal of attention due to its excellent properties such as mobility, on/off current ratio, and maximum on-current of the devices. The transition of mobility as a function of temperature and thickness dependence are also discussed. However, the mobility of MoS_2 material is large in bulk form and lower in monolayer form. The use of a high-k gate dielectric in MoS2 FET is used to enhance the mobility of the device. Different metal contact engineering and different doping techniques were deployed to achieve low contact resistance. This review paper focuses on various aspects of layered TMDs material MoS2 based field effect transistors.
文摘2D SnS_2 nanosheets are exfoliated by micromechanical exfoliation technique from SnS_2 single crystals which are synthesized by CVT methods.Monolayer SnS_2 nanosheet has been obtained and the Raman spectrum shows that A_（1g） mode of monolayer SnS_2 shows a slight softening compared with bulk SnS_2 single crystal.The field effect transistors（FETs） based on multilayer SnS_2 nanosheets have been fabricated,of which the electrical and photoelectrical properties have been measured.Under dark condition,with V_（sd） of 1 V,our SnS_2 FET shows n-type behavior.The carrier mobility of the FETs reach 3.51 cm^2V^（-1）s^（-1） and the ‘ON/OFF’ ratio is about 5×10~2.The SnS_2 FET is also illuminated under 532 nm laser with the power of 500 m W/cm^2.The light absorption causes an increment of carrier mobility（from 3.51 cm^2V^（-1）s^（-1） under dark condition to 3.85 cm^2V^（-1）s^（-1） under 532 nm laser illumination with the power of 500 m W/cm^2/ of SnS_2.The responsivity（R） and detectivity of our multilayer device under 500 m W/cm^2532 nm is 2.08 A/W and 6×10~6 J,respectively.All the above properties indicate the potential of SnS_2 nanosheets to be used as FETs and phototransistors.
