This article presents the design and performance of a terahertz on-chip coupled-grounded coplanar waveguide(GCPW)power combiner using a 50μm-thick InP process.The proposed topology uses two coupled-GCPW lines at the ...This article presents the design and performance of a terahertz on-chip coupled-grounded coplanar waveguide(GCPW)power combiner using a 50μm-thick InP process.The proposed topology uses two coupled-GCPW lines at the end of the input port to substitute two quarter-wavelength GCPW lines,which is different from the conventional Wilkinson power combiner and can availably minimize the coverage area.According to the results obtained,for the frequency range of 210-250 GHz,the insertion losses for each two-way combiner and four-way combiner were lower than 1.05 dB and1.35 dB,respectively,and the in-band return losses were better than 11 dB.Moreover,the proposed on-chip GCPW-based combiners achieved a compromise in low-loss,broadband,and small-size,which can find wide applications in terahertz bands,such as power amplifiers and signal distribution networks.展开更多
The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ...The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (Cmax/Cmin), and thus leads to poor nonlinear C–V characteristics. The proposed Schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.展开更多
基金Project supported in part by the National Natural Science Foundation of China(Grant No.61871072)。
文摘This article presents the design and performance of a terahertz on-chip coupled-grounded coplanar waveguide(GCPW)power combiner using a 50μm-thick InP process.The proposed topology uses two coupled-GCPW lines at the end of the input port to substitute two quarter-wavelength GCPW lines,which is different from the conventional Wilkinson power combiner and can availably minimize the coverage area.According to the results obtained,for the frequency range of 210-250 GHz,the insertion losses for each two-way combiner and four-way combiner were lower than 1.05 dB and1.35 dB,respectively,and the in-band return losses were better than 11 dB.Moreover,the proposed on-chip GCPW-based combiners achieved a compromise in low-loss,broadband,and small-size,which can find wide applications in terahertz bands,such as power amplifiers and signal distribution networks.
文摘The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (Cmax/Cmin), and thus leads to poor nonlinear C–V characteristics. The proposed Schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.
