A series of magnetic properties of Tm_2Fe_(14)B are explained quantitatively by the calculations based on the single ion model. The magnetic properties include the temperature dependence of the spontaneous magnetizati...A series of magnetic properties of Tm_2Fe_(14)B are explained quantitatively by the calculations based on the single ion model. The magnetic properties include the temperature dependence of the spontaneous magnetization, the spin reorientation temperature and the magnetization curves along the principal crystal axes at 4.2, 100, 150 and 200 K. The values of the exchange field and the crystalline electric field parameters used in the calculations are μ_BH_(ex)(T=0 K)=135, B_2~0=1.77, B_2~2=±2.97, B_4~0=-3.06×10^(-3), B_4^(-2)=0, B_4~4=-6.82×10^(-3), B_6~0=1.05× 10^(-5), B_6^(-2)=±7.40×10^(-5), B_6~4=1.96×10^(-4), and B_6^(-6)=0 all in K unit. The magnetization processes of the Fe-and Tm-sublattices at different temperatures are analysed. The processes are characterized by the non-collinearity between the magnetic moments of the Fe-and Tm-sublattices.展开更多
The use of high-permittivity(high-k) thin films as gate dielectrics is essential in the development of lowpower electronics,In this work,rare-earth thulium oxide(Tm_(2)O_(3)) thin films were prepared by a facile solut...The use of high-permittivity(high-k) thin films as gate dielectrics is essential in the development of lowpower electronics,In this work,rare-earth thulium oxide(Tm_(2)O_(3)) thin films were prepared by a facile solution process and annealed at various temperatures from 400 to 700℃.The evolution of the physical and dielectric properties of Tm_(2)O_(3) thin film with annealing temperature was investigated.It is demonstrated that the Tm_(2)O_(3) thin film annealed at 600℃ exhibits the optimal performance,including a low leakage current of 3×10^(-10) A/cm^(2),a large areal capacitance of 250 nF/cm^(2) at 100 Hz,and a high permittivity value of 14.2.The Tm_(2)O_(3) thin film as a gate insulator was integrated into the thin film transistor(TFT) employing In_(2)O_(3)-based semiconducting channels.The In_(2)O_(3) TFT with 600℃-annealed Tm_(2)O_(3) dielectric exhibits the superior perfo rmance,with a high I_(on)/I_(off) of 1.65×10^(7),a small subthre shold swing(SS) value of 0.2 V/dec,a V_(TH) of+1.8 V,and a mobility of 1.68 cm^(2)/(V·s).Furthermore,an inverter constructed by connecting the TFT with a resistor exhibits full-swing characteristics.This work provides a facile and appealing method for preparing the high-k Tm_(2)O_(3) thin films as alternative gate dielectrics with the potential for use in low-power electronics and logic circuit applications.展开更多
文摘A series of magnetic properties of Tm_2Fe_(14)B are explained quantitatively by the calculations based on the single ion model. The magnetic properties include the temperature dependence of the spontaneous magnetization, the spin reorientation temperature and the magnetization curves along the principal crystal axes at 4.2, 100, 150 and 200 K. The values of the exchange field and the crystalline electric field parameters used in the calculations are μ_BH_(ex)(T=0 K)=135, B_2~0=1.77, B_2~2=±2.97, B_4~0=-3.06×10^(-3), B_4^(-2)=0, B_4~4=-6.82×10^(-3), B_6~0=1.05× 10^(-5), B_6^(-2)=±7.40×10^(-5), B_6~4=1.96×10^(-4), and B_6^(-6)=0 all in K unit. The magnetization processes of the Fe-and Tm-sublattices at different temperatures are analysed. The processes are characterized by the non-collinearity between the magnetic moments of the Fe-and Tm-sublattices.
基金supported by the National Natural Science Foundation of China (21978142,52005277)。
文摘The use of high-permittivity(high-k) thin films as gate dielectrics is essential in the development of lowpower electronics,In this work,rare-earth thulium oxide(Tm_(2)O_(3)) thin films were prepared by a facile solution process and annealed at various temperatures from 400 to 700℃.The evolution of the physical and dielectric properties of Tm_(2)O_(3) thin film with annealing temperature was investigated.It is demonstrated that the Tm_(2)O_(3) thin film annealed at 600℃ exhibits the optimal performance,including a low leakage current of 3×10^(-10) A/cm^(2),a large areal capacitance of 250 nF/cm^(2) at 100 Hz,and a high permittivity value of 14.2.The Tm_(2)O_(3) thin film as a gate insulator was integrated into the thin film transistor(TFT) employing In_(2)O_(3)-based semiconducting channels.The In_(2)O_(3) TFT with 600℃-annealed Tm_(2)O_(3) dielectric exhibits the superior perfo rmance,with a high I_(on)/I_(off) of 1.65×10^(7),a small subthre shold swing(SS) value of 0.2 V/dec,a V_(TH) of+1.8 V,and a mobility of 1.68 cm^(2)/(V·s).Furthermore,an inverter constructed by connecting the TFT with a resistor exhibits full-swing characteristics.This work provides a facile and appealing method for preparing the high-k Tm_(2)O_(3) thin films as alternative gate dielectrics with the potential for use in low-power electronics and logic circuit applications.
